KR860001559B1 - 고 (高)콘트라스트 포토레지스트 현상제 - Google Patents

고 (高)콘트라스트 포토레지스트 현상제 Download PDF

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Publication number
KR860001559B1
KR860001559B1 KR1019840003299A KR840003299A KR860001559B1 KR 860001559 B1 KR860001559 B1 KR 860001559B1 KR 1019840003299 A KR1019840003299 A KR 1019840003299A KR 840003299 A KR840003299 A KR 840003299A KR 860001559 B1 KR860001559 B1 KR 860001559B1
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KR
South Korea
Prior art keywords
developer
radical
integer
general formula
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019840003299A
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English (en)
Korean (ko)
Other versions
KR850000704A (ko
Inventor
마빈 루이스 제임스
오스틴 오웬즈 로버트
죠셉 블레이키니 앤드류
Original Assignee
페트라치 시스템즈 인코포레이티드
토마스 이. 마지오
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 페트라치 시스템즈 인코포레이티드, 토마스 이. 마지오 filed Critical 페트라치 시스템즈 인코포레이티드
Publication of KR850000704A publication Critical patent/KR850000704A/ko
Application granted granted Critical
Publication of KR860001559B1 publication Critical patent/KR860001559B1/ko
Expired legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
KR1019840003299A 1983-06-17 1984-06-12 고 (高)콘트라스트 포토레지스트 현상제 Expired KR860001559B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50557183A 1983-06-17 1983-06-17
US505571 1983-06-17

Publications (2)

Publication Number Publication Date
KR850000704A KR850000704A (ko) 1985-02-28
KR860001559B1 true KR860001559B1 (ko) 1986-10-04

Family

ID=24010858

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840003299A Expired KR860001559B1 (ko) 1983-06-17 1984-06-12 고 (高)콘트라스트 포토레지스트 현상제

Country Status (6)

Country Link
EP (1) EP0129106B1 (enExample)
JP (1) JPS6012547A (enExample)
KR (1) KR860001559B1 (enExample)
CA (1) CA1251350A (enExample)
DE (1) DE3469074D1 (enExample)
HK (1) HK49289A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0638396B2 (ja) * 1985-02-04 1994-05-18 ソニー株式会社 ポジタイプフオトレジストの現像方法
US4710449A (en) * 1986-01-29 1987-12-01 Petrarch Systems, Inc. High contrast low metal ion positive photoresist developing method using aqueous base solutions with surfactants
JPS63158552A (ja) * 1986-12-23 1988-07-01 Fuji Photo Film Co Ltd 平版印刷版の製造方法
JPS6472154A (en) * 1987-09-12 1989-03-17 Tama Kagaku Kogyo Kk Positive type photoresist developing solution
JPH01177541A (ja) * 1988-01-07 1989-07-13 Fuji Photo Film Co Ltd 平版印刷版の製造方法
US5811221A (en) * 1997-05-30 1998-09-22 Kodak Polychrome Graphics, Llc Alkaline developing composition and method of use to process lithographic printing plates
US6083662A (en) * 1997-05-30 2000-07-04 Kodak Polychrome Graphics Llc Methods of imaging and printing with a positive-working infrared radiation sensitive printing plate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743892B2 (enExample) * 1973-09-04 1982-09-17
JPS608494B2 (ja) * 1978-03-01 1985-03-04 富士通株式会社 ポジ型レジスト像の形成法
DE2921142A1 (de) * 1979-05-25 1980-12-11 Bayer Ag Verwendung von perfluoralkansulfonamid- salzen als tenside
JPS5740429A (en) * 1980-08-25 1982-03-06 Chisso Corp 4-(4-n-alkyl-1-cyclohexen-1-yl)-4'-fluorobiphenyl

Also Published As

Publication number Publication date
DE3469074D1 (en) 1988-03-03
JPH0462576B2 (enExample) 1992-10-06
EP0129106A1 (en) 1984-12-27
KR850000704A (ko) 1985-02-28
JPS6012547A (ja) 1985-01-22
EP0129106B1 (en) 1988-01-27
HK49289A (en) 1989-06-30
CA1251350A (en) 1989-03-21

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