KR860001163B1 - 박막 태양전지 - Google Patents

박막 태양전지 Download PDF

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Publication number
KR860001163B1
KR860001163B1 KR8201383A KR820001383A KR860001163B1 KR 860001163 B1 KR860001163 B1 KR 860001163B1 KR 8201383 A KR8201383 A KR 8201383A KR 820001383 A KR820001383 A KR 820001383A KR 860001163 B1 KR860001163 B1 KR 860001163B1
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KR
South Korea
Prior art keywords
silicon
thin film
solar cell
film
substrate
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Expired
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KR8201383A
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English (en)
Korean (ko)
Inventor
에이이찌 마루야마
도시가즈 시마다
야스히로 시라기
요시후미 가다야마
히로가즈 마쓰바라
아끼도시 이사자까
요시마사 무라야마
아끼라 신다니
Original Assignee
미다 가쓰시게루
가부시기 가이샤 히다찌 세이사꾸쇼
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Application filed by 미다 가쓰시게루, 가부시기 가이샤 히다찌 세이사꾸쇼 filed Critical 미다 가쓰시게루
Application granted granted Critical
Publication of KR860001163B1 publication Critical patent/KR860001163B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
KR8201383A 1981-03-30 1982-03-30 박막 태양전지 Expired KR860001163B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56045554A JPS57160174A (en) 1981-03-30 1981-03-30 Thin film solar battery
JP81-45554 1981-03-30

Publications (1)

Publication Number Publication Date
KR860001163B1 true KR860001163B1 (ko) 1986-08-18

Family

ID=12722573

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8201383A Expired KR860001163B1 (ko) 1981-03-30 1982-03-30 박막 태양전지

Country Status (6)

Country Link
US (1) US4433202A (enExample)
EP (1) EP0062471B1 (enExample)
JP (1) JPS57160174A (enExample)
KR (1) KR860001163B1 (enExample)
CA (1) CA1168742A (enExample)
DE (1) DE3277273D1 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5767020A (en) * 1980-10-15 1982-04-23 Agency Of Ind Science & Technol Thin silicon film and its manufacture
US4490208A (en) * 1981-07-08 1984-12-25 Agency Of Industrial Science And Technology Method of producing thin films of silicon
JPH0628313B2 (ja) * 1982-01-19 1994-04-13 キヤノン株式会社 半導体素子
JPS58204572A (ja) * 1982-05-24 1983-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS58204527A (ja) * 1982-05-24 1983-11-29 Semiconductor Energy Lab Co Ltd 繊維構造を有する半導体およびその作製方法
JPS5996722A (ja) * 1982-11-25 1984-06-04 Agency Of Ind Science & Technol 薄膜半導体装置
US4675715A (en) * 1982-12-09 1987-06-23 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor integrated circuit vertical geometry impedance element
GB2139421B (en) * 1983-03-07 1987-09-23 Semiconductor Energy Lab Semiconductor photoelectric conversion device and method of manufacture
JPH06101571B2 (ja) * 1983-06-03 1994-12-12 株式会社半導体エネルギー研究所 半導体装置
JPS6054913A (ja) * 1983-09-05 1985-03-29 Semiconductor Energy Lab Co Ltd 珪素繊維およびその作製方法
US4950614A (en) * 1984-05-15 1990-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of making a tandem type semiconductor photoelectric conversion device
US4639277A (en) * 1984-07-02 1987-01-27 Eastman Kodak Company Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material
JPS6195577A (ja) * 1984-10-16 1986-05-14 Sanyo Electric Co Ltd 非晶質光起電力素子
US4609771A (en) * 1984-11-02 1986-09-02 Sovonics Solar Systems Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material
US4600801A (en) * 1984-11-02 1986-07-15 Sovonics Solar Systems Fluorinated, p-doped microcrystalline silicon semiconductor alloy material
JPS6390178A (ja) * 1986-10-02 1988-04-21 Komatsu Ltd 光電変換素子
JPS6473680A (en) * 1987-09-14 1989-03-17 Sanyo Electric Co Photovoltaic device
EP0317350B1 (en) * 1987-11-20 1995-06-21 Canon Kabushiki Kaisha A pin function photovoltaic element, tandem und triple cells
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
JP2740284B2 (ja) * 1989-08-09 1998-04-15 三洋電機株式会社 光起電力素子
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
CN1082254C (zh) * 1995-08-22 2002-04-03 松下电器产业株式会社 硅结构体及其制造方法和装置及使用硅结构体的太阳电池
US5720827A (en) * 1996-07-19 1998-02-24 University Of Florida Design for the fabrication of high efficiency solar cells
JPH10117006A (ja) * 1996-08-23 1998-05-06 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置
JP3754815B2 (ja) * 1997-02-19 2006-03-15 キヤノン株式会社 光起電力素子、光電変換素子、光起電力素子の製造方法及び光電変換素子の製造方法
KR100292048B1 (ko) * 1998-06-09 2001-07-12 구본준, 론 위라하디락사 박막트랜지스터액정표시장치의제조방법
AU749571B2 (en) 1998-07-02 2002-06-27 Astropower Inc. Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
AU2002301188B2 (en) * 1998-07-02 2004-04-29 Astropower Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
DE69936906T2 (de) * 1998-10-12 2008-05-21 Kaneka Corp. Verfahren zur Herstellung einer siliziumhaltigen photoelektrischen Dünnschicht-Umwandlungsanordnung
US6649824B1 (en) 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
JP4620838B2 (ja) * 2000-06-16 2011-01-26 キヤノン株式会社 光電変換装置
KR100303142B1 (ko) 1999-10-29 2001-11-02 구본준, 론 위라하디락사 액정표시패널의 제조방법
JP4450126B2 (ja) * 2000-01-21 2010-04-14 日新電機株式会社 シリコン系結晶薄膜の形成方法
KR100450595B1 (ko) * 2000-02-09 2004-09-30 히다찌 케이블 리미티드 결정실리콘 반도체장치 및 그 장치의 제조방법
JP4672832B2 (ja) * 2000-06-16 2011-04-20 キヤノン株式会社 光電変換装置
JP2002270507A (ja) * 2001-03-14 2002-09-20 Hitachi Cable Ltd 結晶シリコン層の形成方法および結晶シリコン半導体装置
JP4240984B2 (ja) * 2002-10-08 2009-03-18 三洋電機株式会社 光電変換装置
KR101381508B1 (ko) * 2005-07-15 2014-04-04 메르크 파텐트 게엠베하 회절 호일
WO2007112760A1 (en) * 2006-03-31 2007-10-11 Antulio Tarazona Labrador Solar cell, prefabricated base part for a solar cell and method for manufacturing such a base part and a solar cell
TWI367530B (en) * 2007-12-25 2012-07-01 Ind Tech Res Inst Chlorine, fluorine and lithium co-doped transparent conductive films and methods for fabricating the same
US7888167B2 (en) * 2008-04-25 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US9299863B2 (en) * 2008-05-07 2016-03-29 The Hong Kong University Of Science And Technology Ultrathin film multi-crystalline photovoltaic device
US20090293954A1 (en) * 2008-05-30 2009-12-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric Conversion Device And Method For Manufacturing The Same
JP2011014884A (ja) * 2009-06-05 2011-01-20 Semiconductor Energy Lab Co Ltd 光電変換装置
TW201133881A (en) * 2010-03-22 2011-10-01 Auria Solar Co Ltd Thin film solar cell and manufacturing method thereof
JP5714972B2 (ja) * 2010-05-07 2015-05-07 株式会社半導体エネルギー研究所 光電変換装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953876A (en) * 1973-06-07 1976-04-27 Dow Corning Corporation Silicon solar cell array
DE2508803C3 (de) * 1975-02-28 1982-07-08 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur
US4062038A (en) * 1976-01-28 1977-12-06 International Business Machines Corporation Radiation responsive device
JPS54158190A (en) * 1978-06-05 1979-12-13 Yamazaki Shunpei Semiconductor device and method of fabricating same
FR2462782A1 (fr) * 1979-08-03 1981-02-13 Thomson Csf Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede
US4270018A (en) * 1979-12-26 1981-05-26 Gibbons James F Amorphous solar cells
BE881343A (fr) * 1980-01-25 1980-07-25 Solarex Corp Cellule photovoltaique en silicium semicristallin et son procede de fabrication
US4343830A (en) * 1980-11-13 1982-08-10 Motorola, Inc. Method for improving the efficiency of solar cells having imperfections

Also Published As

Publication number Publication date
DE3277273D1 (en) 1987-10-15
CA1168742A (en) 1984-06-05
US4433202A (en) 1984-02-21
JPH0458193B2 (enExample) 1992-09-16
EP0062471A3 (en) 1984-05-02
JPS57160174A (en) 1982-10-02
EP0062471A2 (en) 1982-10-13
EP0062471B1 (en) 1987-09-09

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