DE3277273D1 - Thin film solar cell - Google Patents

Thin film solar cell

Info

Publication number
DE3277273D1
DE3277273D1 DE8282301632T DE3277273T DE3277273D1 DE 3277273 D1 DE3277273 D1 DE 3277273D1 DE 8282301632 T DE8282301632 T DE 8282301632T DE 3277273 T DE3277273 T DE 3277273T DE 3277273 D1 DE3277273 D1 DE 3277273D1
Authority
DE
Germany
Prior art keywords
thin film
solar cell
film solar
cell
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282301632T
Other languages
English (en)
Inventor
Eiichi Maruyama
Toshikazu Shimada
Yasuhiro Shiraki
Yoshifumi Katayama
Hirokazu Sanhaitsu-M Matsubara
Akitoshi Ishizaka
Yoshimasa Murayama
Akira Shintani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3277273D1 publication Critical patent/DE3277273D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
DE8282301632T 1981-03-30 1982-03-29 Thin film solar cell Expired DE3277273D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56045554A JPS57160174A (en) 1981-03-30 1981-03-30 Thin film solar battery

Publications (1)

Publication Number Publication Date
DE3277273D1 true DE3277273D1 (en) 1987-10-15

Family

ID=12722573

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282301632T Expired DE3277273D1 (en) 1981-03-30 1982-03-29 Thin film solar cell

Country Status (6)

Country Link
US (1) US4433202A (de)
EP (1) EP0062471B1 (de)
JP (1) JPS57160174A (de)
KR (1) KR860001163B1 (de)
CA (1) CA1168742A (de)
DE (1) DE3277273D1 (de)

Families Citing this family (47)

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JPS5767020A (en) * 1980-10-15 1982-04-23 Agency Of Ind Science & Technol Thin silicon film and its manufacture
US4490208A (en) * 1981-07-08 1984-12-25 Agency Of Industrial Science And Technology Method of producing thin films of silicon
JPH0628313B2 (ja) * 1982-01-19 1994-04-13 キヤノン株式会社 半導体素子
JPS58204527A (ja) * 1982-05-24 1983-11-29 Semiconductor Energy Lab Co Ltd 繊維構造を有する半導体およびその作製方法
JPS58204572A (ja) * 1982-05-24 1983-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS5996722A (ja) * 1982-11-25 1984-06-04 Agency Of Ind Science & Technol 薄膜半導体装置
US4675715A (en) * 1982-12-09 1987-06-23 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor integrated circuit vertical geometry impedance element
GB2139421B (en) * 1983-03-07 1987-09-23 Semiconductor Energy Lab Semiconductor photoelectric conversion device and method of manufacture
JPH06101571B2 (ja) * 1983-06-03 1994-12-12 株式会社半導体エネルギー研究所 半導体装置
JPS6054913A (ja) * 1983-09-05 1985-03-29 Semiconductor Energy Lab Co Ltd 珪素繊維およびその作製方法
US4950614A (en) * 1984-05-15 1990-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of making a tandem type semiconductor photoelectric conversion device
US4639277A (en) * 1984-07-02 1987-01-27 Eastman Kodak Company Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material
JPS6195577A (ja) * 1984-10-16 1986-05-14 Sanyo Electric Co Ltd 非晶質光起電力素子
US4609771A (en) * 1984-11-02 1986-09-02 Sovonics Solar Systems Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material
US4600801A (en) * 1984-11-02 1986-07-15 Sovonics Solar Systems Fluorinated, p-doped microcrystalline silicon semiconductor alloy material
JPS6390178A (ja) * 1986-10-02 1988-04-21 Komatsu Ltd 光電変換素子
JPS6473680A (en) * 1987-09-14 1989-03-17 Sanyo Electric Co Photovoltaic device
US4926229A (en) * 1987-11-20 1990-05-15 Canon Kabushiki Kaisha Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
JP2740284B2 (ja) * 1989-08-09 1998-04-15 三洋電機株式会社 光起電力素子
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
KR100294057B1 (ko) * 1995-08-22 2001-09-17 모리시타 요이찌 실리콘 구조체층을 포함하는 반도체 장치, 그 층의 제조방법 및 제조장치와 그 층을 이용한 태양전지
US5720827A (en) * 1996-07-19 1998-02-24 University Of Florida Design for the fabrication of high efficiency solar cells
JPH10117006A (ja) * 1996-08-23 1998-05-06 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置
JP3754815B2 (ja) * 1997-02-19 2006-03-15 キヤノン株式会社 光起電力素子、光電変換素子、光起電力素子の製造方法及び光電変換素子の製造方法
KR100292048B1 (ko) * 1998-06-09 2001-07-12 구본준, 론 위라하디락사 박막트랜지스터액정표시장치의제조방법
AU749571B2 (en) * 1998-07-02 2002-06-27 Astropower Inc. Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
AU2002301188B2 (en) * 1998-07-02 2004-04-29 Astropower Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
DE69936906T2 (de) * 1998-10-12 2008-05-21 Kaneka Corp. Verfahren zur Herstellung einer siliziumhaltigen photoelektrischen Dünnschicht-Umwandlungsanordnung
US6649824B1 (en) * 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
JP4620838B2 (ja) * 2000-06-16 2011-01-26 キヤノン株式会社 光電変換装置
KR100303142B1 (ko) 1999-10-29 2001-11-02 구본준, 론 위라하디락사 액정표시패널의 제조방법
JP4450126B2 (ja) * 2000-01-21 2010-04-14 日新電機株式会社 シリコン系結晶薄膜の形成方法
KR100450595B1 (ko) * 2000-02-09 2004-09-30 히다찌 케이블 리미티드 결정실리콘 반도체장치 및 그 장치의 제조방법
JP4672832B2 (ja) * 2000-06-16 2011-04-20 キヤノン株式会社 光電変換装置
JP2002270507A (ja) * 2001-03-14 2002-09-20 Hitachi Cable Ltd 結晶シリコン層の形成方法および結晶シリコン半導体装置
JP4240984B2 (ja) * 2002-10-08 2009-03-18 三洋電機株式会社 光電変換装置
CN101496182B (zh) * 2005-07-15 2013-10-16 默克专利有限责任公司 衍射箔
WO2007112760A1 (en) * 2006-03-31 2007-10-11 Antulio Tarazona Labrador Solar cell, prefabricated base part for a solar cell and method for manufacturing such a base part and a solar cell
TWI367530B (en) * 2007-12-25 2012-07-01 Ind Tech Res Inst Chlorine, fluorine and lithium co-doped transparent conductive films and methods for fabricating the same
US7888167B2 (en) * 2008-04-25 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US9299863B2 (en) * 2008-05-07 2016-03-29 The Hong Kong University Of Science And Technology Ultrathin film multi-crystalline photovoltaic device
US20090293954A1 (en) * 2008-05-30 2009-12-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric Conversion Device And Method For Manufacturing The Same
JP2011014884A (ja) * 2009-06-05 2011-01-20 Semiconductor Energy Lab Co Ltd 光電変換装置
TW201133881A (en) * 2010-03-22 2011-10-01 Auria Solar Co Ltd Thin film solar cell and manufacturing method thereof
JP5714972B2 (ja) * 2010-05-07 2015-05-07 株式会社半導体エネルギー研究所 光電変換装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953876A (en) * 1973-06-07 1976-04-27 Dow Corning Corporation Silicon solar cell array
DE2508803C3 (de) * 1975-02-28 1982-07-08 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur
US4062038A (en) * 1976-01-28 1977-12-06 International Business Machines Corporation Radiation responsive device
JPS54158190A (en) * 1978-06-05 1979-12-13 Yamazaki Shunpei Semiconductor device and method of fabricating same
FR2462782A1 (fr) * 1979-08-03 1981-02-13 Thomson Csf Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede
US4270018A (en) * 1979-12-26 1981-05-26 Gibbons James F Amorphous solar cells
BE881343A (fr) * 1980-01-25 1980-07-25 Solarex Corp Cellule photovoltaique en silicium semicristallin et son procede de fabrication
US4343830A (en) * 1980-11-13 1982-08-10 Motorola, Inc. Method for improving the efficiency of solar cells having imperfections

Also Published As

Publication number Publication date
JPH0458193B2 (de) 1992-09-16
US4433202A (en) 1984-02-21
CA1168742A (en) 1984-06-05
KR860001163B1 (ko) 1986-08-18
EP0062471A2 (de) 1982-10-13
JPS57160174A (en) 1982-10-02
EP0062471A3 (en) 1984-05-02
EP0062471B1 (de) 1987-09-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT. GROENING, H., DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee