JPS6473680A - Photovoltaic device - Google Patents

Abstract

PURPOSE:To prevent carriers from being recoupled by a method wherein a crystal grain boundary where crystal particles are adjacent to one another is doped with an impurity used to determine a conductivity type. CONSTITUTION:A metal substrate 1 composed of stainless steel or the like and a semiconductor film 2 composed of an aggregate of many crystal particles are provided; this film is composed of a p-type layer part 2p, an i-type layer part 2i and an n-type layer part 2n in order to form a pin junction which is nearly parallel to a film plane as viewed from the light incidence side. A photodetecting face electrode 3 which is arranged on the surface of the p-type layer part 2p on the light incidence side in a shape to let a beam enter the semiconductor film 2 is constituted to be, e.g., a metal lattice shape and covers the whole surface of the semiconductor film 2 evenly. A light-transmitting protective film 4 which covers the surface of the semiconductor film 2 including the photodetecting face electrode 3 in order to prevent an incident beam from being reflected and to protect the surface is composed of silicon oxide, A crystal grain boundary where crystal particles are adjacent to one another is doped with an impurity used to determine a conductivity type at an impurity layer part displaying a p-type or an n-type conductivity type. The crystal grain boundary at the p-type layer part 2p arranged on the light incidence side is doped with the impurity to determine the p-type, e.g., boron, aluminum or the like.