KR860000709A - 인산 삼아미드화물과 그 중합체를 함유하는 도우펀트(dopansts) 조성물 - Google Patents

인산 삼아미드화물과 그 중합체를 함유하는 도우펀트(dopansts) 조성물 Download PDF

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KR860000709A
KR860000709A KR1019850004279A KR850004279A KR860000709A KR 860000709 A KR860000709 A KR 860000709A KR 1019850004279 A KR1019850004279 A KR 1019850004279A KR 850004279 A KR850004279 A KR 850004279A KR 860000709 A KR860000709 A KR 860000709A
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dopant
dopant composition
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진 아넬로 루이스 (외 2)
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로이 에이취. 맷신길
알라이드 코오포레이션
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Publication of KR860000709A publication Critical patent/KR860000709A/ko

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Abstract

내용 없음

Description

인산 삼아미드화물과 그 중합체를 함유하는 도우펀트(dopansts)조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (9)

  1. 다음 일반식의 인산 삼아미드화물 단량체 및 그 중합체로 부터 선택된 화합물을 도우펀트 성분으로하여 최소한 1.0wt% 이상의 중량비로 휘발성 유기용매에 용해시켜 구성한 인-질소 도우펀트조성물.
    식중, R은 수소, 지방족 탄화수소 라디칼, 고리족 탄화수소라디칼 또는 방향족 탄화수소라디칼로로 부터 선택되되 최소한 하나는 지방족, 그리족 또는 방향족 탄화수소 라디칼이며, X는 산소 또는 황이며, n은 2 이상의 정수로서 그 상한치는 결과의 중합체가 사용 조건하에서 용해성인 것을 만족하는 것이다.
  2. 청구범위 제1항에 있어서, 도우펀트 성분이 다음 일반식의 고리형 이합체 및/ 또는 삼합체를 최소한 0.1wt%이상 포함하는 것인, 도우펀트 조성물.
    및
  3. 청구범위 제1항에 있어서, 도우펀트 성분이 단량체인 것인, 도우펀트조성물.
  4. 청구범위 제1항에 있어서, 도우펀트 성분이 이합체인 것인, 도우펀트조성물.
  5. 청구범위 제1항에 있어서, 도우펀트 성분이 삼합체인 것인, 도우펀트조성물.
  6. 청구범위 제1항에 있어서, 도우펀트 성분이 선중합체인 것인, 도우펀트조성물.
  7. 청구범위 제1항의 도우펀트 조성물을 실리콘 웨이퍼 표면에 적용하고 웨이퍼를 2,000-10,000rpm으로 회전시켜 약 100-7,000Å의 중합체 박막을 웨이퍼기질 위에 형성한 후 처리된 웨이퍼를 확산로내에서 질소기권(산소함량0-30%)하 850-1,100℃에서 0.1-2.0시간 가열함으로서 반도체 기질에 청구범위 제1항의 도우펀트조성물을 적용하는 방법.
  8. 반도체 기질을 회전시키면서 상기 기질위에, 최소한 1.0wt%이상의 리유질수지를 함유하는, 청구범위 제1항의 도우펀트조성물의 침착적용시킴으로서 반도체물질을 도우핑하는 방법.
  9. 청구범위 제7항에 있어서, 도우펀트조성물의 수지농도가 1.0-40wt%정도임을 특징으로 하는, 반도체기질에의 도우펀트조성물 적용방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850004279A 1984-06-18 1985-06-17 인산 삼아미드화물과 그 중합체를 함유하는 도우펀트(dopansts) 조성물 KR860000709A (ko)

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US62175284A 1984-06-18 1984-06-18
US621752 1984-06-18

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0534778Y2 (ko) * 1988-05-30 1993-09-02
JPH03242252A (ja) * 1990-02-19 1991-10-29 Mesatsuku:Kk 空気霧化式静電塗装ガン
US8148598B2 (en) * 2006-02-22 2012-04-03 Dsg Technology Holdings Limited Method of making an absorbent composite and absorbent articles employing the same
US9076719B2 (en) 2013-08-21 2015-07-07 The Regents Of The University Of California Doping of a substrate via a dopant containing polymer film
JP6072129B2 (ja) 2014-04-30 2017-02-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ドーパント含有ポリマー膜を用いた基体のドーピング

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2666750A (en) * 1951-02-02 1954-01-19 Eastman Kodak Co Polymeric phosphonic acid diamides
US3516965A (en) * 1966-01-04 1970-06-23 Mc Donnell Douglas Corp Composition of polyepoxide and organophosphorus amide curing agent and product thereof
US4210451A (en) * 1973-11-09 1980-07-01 Sandoz Ltd. Regenerated cellulose flameproofed with organophosphorylamides
GB2114365B (en) * 1982-01-28 1986-08-06 Owens Illinois Inc Process for forming a doped oxide film and composite article
DE3375253D1 (de) * 1982-09-23 1988-02-11 Allied Corp Polymeric boron-nitrogen dopant

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