DE3375253D1 - Polymeric boron-nitrogen dopant - Google Patents
Polymeric boron-nitrogen dopantInfo
- Publication number
- DE3375253D1 DE3375253D1 DE8383108196T DE3375253T DE3375253D1 DE 3375253 D1 DE3375253 D1 DE 3375253D1 DE 8383108196 T DE8383108196 T DE 8383108196T DE 3375253 T DE3375253 T DE 3375253T DE 3375253 D1 DE3375253 D1 DE 3375253D1
- Authority
- DE
- Germany
- Prior art keywords
- nitrogen dopant
- polymeric boron
- boron
- polymeric
- dopant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- TZHYBRCGYCPGBQ-UHFFFAOYSA-N [B].[N] Chemical compound [B].[N] TZHYBRCGYCPGBQ-UHFFFAOYSA-N 0.000 title 1
- 239000002019 doping agent Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04H—MAKING TEXTILE FABRICS, e.g. FROM FIBRES OR FILAMENTARY MATERIAL; FABRICS MADE BY SUCH PROCESSES OR APPARATUS, e.g. FELTS, NON-WOVEN FABRICS; COTTON-WOOL; WADDING ; NON-WOVEN FABRICS FROM STAPLE FIBRES, FILAMENTS OR YARNS, BONDED WITH AT LEAST ONE WEB-LIKE MATERIAL DURING THEIR CONSOLIDATION
- D04H5/00—Non woven fabrics formed of mixtures of relatively short fibres and yarns or like filamentary material of substantial length
- D04H5/06—Non woven fabrics formed of mixtures of relatively short fibres and yarns or like filamentary material of substantial length strengthened or consolidated by welding-together thermoplastic fibres, filaments, or yarns
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
- C08G79/08—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule a linkage containing boron
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L85/00—Compositions of macromolecular compounds obtained by reactions forming a linkage in the main chain of the macromolecule containing atoms other than silicon, sulfur, nitrogen, oxygen and carbon; Compositions of derivatives of such polymers
- C08L85/04—Compositions of macromolecular compounds obtained by reactions forming a linkage in the main chain of the macromolecule containing atoms other than silicon, sulfur, nitrogen, oxygen and carbon; Compositions of derivatives of such polymers containing boron
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Medicinal Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Polymers & Plastics (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Textile Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42194582A | 1982-09-23 | 1982-09-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3375253D1 true DE3375253D1 (de) | 1988-02-11 |
Family
ID=23672737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383108196T Expired DE3375253D1 (de) | 1982-09-23 | 1983-08-19 | Polymeric boron-nitrogen dopant |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0104412B1 (de) |
JP (1) | JPS5980466A (de) |
KR (1) | KR850000463A (de) |
DE (1) | DE3375253D1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0165507A3 (de) * | 1984-06-18 | 1987-12-02 | Allied Corporation | Phosphortriamide und Polymere daraus als Dotiermittel |
FR2629463B1 (fr) * | 1988-04-01 | 1990-12-14 | Rhone Poulenc Chimie | Procede de preparation de polymeres a base de bore et d'azote precurseurs de nitrure de bore |
JPH0758698B2 (ja) * | 1990-08-22 | 1995-06-21 | 信越半導体株式会社 | 半導体ウエーハヘのボロン拡散方法 |
FR2695645B1 (fr) * | 1992-09-15 | 1994-12-16 | Rhone Poulenc Chimie | Procédé de préparation de polyaminoborazines. |
MXPA04001370A (es) | 2001-08-13 | 2005-06-06 | Lcp Tech Holdings Llc | Sustancias quimicas de la tecnologia de los polimeros cristales liquidos y sus aplicaciones. |
US8518170B2 (en) * | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
US9076719B2 (en) | 2013-08-21 | 2015-07-07 | The Regents Of The University Of California | Doping of a substrate via a dopant containing polymer film |
JP6072129B2 (ja) | 2014-04-30 | 2017-02-01 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | ドーパント含有ポリマー膜を用いた基体のドーピング |
JP6986425B2 (ja) * | 2016-12-22 | 2021-12-22 | 東京応化工業株式会社 | 不純物拡散剤組成物、及び半導体基板の製造方法 |
JP6946210B2 (ja) * | 2017-06-23 | 2021-10-06 | 東京応化工業株式会社 | 拡散剤組成物、及び半導体基板の製造方法 |
JP7110021B2 (ja) * | 2017-08-04 | 2022-08-01 | 東京応化工業株式会社 | 拡散剤組成物、及び半導体基板の製造方法 |
CN114068758B (zh) * | 2020-07-30 | 2024-05-31 | 一道新能源科技股份有限公司 | 一种硼扩散处理控制方法、装置和炉管 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3052641A (en) * | 1959-08-03 | 1962-09-04 | United States Borax Chem | Boron-nitrogen polymers |
GB1018031A (en) * | 1961-02-16 | 1966-01-26 | Nat Res Dev | Polymers containing borazole rings |
US3341474A (en) * | 1961-12-01 | 1967-09-12 | American Potash & Chem Corp | Borazene oxide derivative polymers and preparation thereof |
US3375274A (en) * | 1964-11-20 | 1968-03-26 | Olin Mathieson | Alkylene borazine polymers |
DE2007752B2 (de) * | 1970-02-19 | 1978-07-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von dotiertem Halbleitermaterial |
FR2245407B3 (de) * | 1973-09-19 | 1977-04-08 | Texas Instruments Inc | |
DE2614324A1 (de) * | 1976-04-02 | 1977-10-13 | Gribov | Verfahren zur herstellung einer schichtbildenden loesung |
-
1983
- 1983-08-19 DE DE8383108196T patent/DE3375253D1/de not_active Expired
- 1983-08-19 EP EP83108196A patent/EP0104412B1/de not_active Expired
- 1983-09-22 KR KR1019830004435A patent/KR850000463A/ko not_active Application Discontinuation
- 1983-09-24 JP JP58176871A patent/JPS5980466A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0104412B1 (de) | 1988-01-07 |
EP0104412A1 (de) | 1984-04-04 |
KR850000463A (ko) | 1985-02-27 |
JPS5980466A (ja) | 1984-05-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |