KR840000074A - 감광성 내식막에 균일한 정제 패턴을 노출시키는 방법 및 장치 - Google Patents

감광성 내식막에 균일한 정제 패턴을 노출시키는 방법 및 장치 Download PDF

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Publication number
KR840000074A
KR840000074A KR1019820001833A KR820001833A KR840000074A KR 840000074 A KR840000074 A KR 840000074A KR 1019820001833 A KR1019820001833 A KR 1019820001833A KR 820001833 A KR820001833 A KR 820001833A KR 840000074 A KR840000074 A KR 840000074A
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South Korea
Prior art keywords
photoresist
gas
exposing
contact
humidity
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KR1019820001833A
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English (en)
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KR860000158B1 (ko
Inventor
야스히로 고이즈미 (외 4)
Original Assignee
미다 가쓰시게루 (외 1)
가부시기 가이샤 히다찌 세이사꾸쇼
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Publication of KR840000074A publication Critical patent/KR840000074A/ko
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Publication of KR860000158B1 publication Critical patent/KR860000158B1/ko

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    • AHUMAN NECESSITIES
    • A44HABERDASHERY; JEWELLERY
    • A44CPERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C11/00Watch chains; Ornamental chains
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

내용 없음

Description

감광성 내식막에 균일한 정제 패턴을 노출시키는 방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 실시예에 관한 축소 노출장치를 나타낸 도식적 다이아그램, 제3도는 제2도의 장치에 사용된 가습기의 확대 단면도.

Claims (7)

  1. 적어도 설정된 전지역과 노출기간에 감광성내식막의 수분 함량을 균일하게 만들기 위해 주위대기와 격리되어 감광성내식막과 접촉하는 가스의 습도를 설정범위의 값으로 조절하는 스텝과 상기한 조절상태하에 감광성 내식막을 설정 지역에서 노출시키도록 기공판에 피복된 감광성 내식막 위에 빛을 방사하는 스텝등을 포함하고 있는 가공판에 피복된 감광성 내식막을 노출시키는 방법.
  2. 제1항에 있어서 감광성 내식막과 접촉하는 가스가 설정온도의 범위으로 조절되는 감광성 내식막을 노출시키는 방법.
  3. 제1항 및 2항에 있어서 감광성 내식막과 접촉하는 가스의 상대습도가 약 10% 또는 그 이상으로 하는 감광성 내식막을 노출시키는 방법.
  4. 감광성 내식막에 패턴을 형성하도록 감광성 내식막을 노출시키기 위한 대물렌즐를 가지는 광학계와 상기 대물렌즈와 감광성 내식막 사이의 공간으로 가스를 공급하는 가스공급부와, 가스의 습도를 설정범위 이내로 유지시키기 위해 가스 공급부에 연결된 습도조절기 등을 포함하고 있는 가공판에 피복된 감광성 내식막을 노출시키는 장치.
  5. 제4항에 있어서 가스 공급부는 가스 공급원과, 감광성 내식막에 가스를 분출하기 위한 가스분출 노즐과 광학계의 촛점을 조정하는 공기 측미계등을 구비하고, 습도조절기가 가스 공급원과 가스 분출노즐 사이에 설치되게 한 감광성 내식막을 노출시키는 장치.
  6. 제4항에 있어서, 가스 공급부는 광학계의 가공판의 대물렌즈를 적어도 부분적으로 밀폐하고 있는 케이징을 가지고 있으며, 가스가 케이징으로 분출되어 감광성 내식막의 표면과 접촉되게 한 감광성 내식막을 노출시키는 장치.
  7. 제4항, 제5항 및 6항에 있어서 가습조절기가 가스를 가습하기 위해 물을 담고 있는 용기을 갖고 있어 그 용기 내부가, 가스가 통과하는 통로의 일부로 형성되게 한 감광성 내식막을 노출시키는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8201833A 1981-04-23 1982-04-23 감광성 내식막에 균일한 정제 패턴을 노출시키는 방법 및 장치 KR860000158B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DD81229475A DD160756A3 (de) 1981-04-24 1981-04-24 Anordnung zur verbesserung fotochemischer umsetzungsprozesse in fotoresistschichten
DEWPG02B/229475/3 1981-04-24
JP56154059A JPS57177144A (en) 1981-04-24 1981-09-30 Method and device for exposure

Publications (2)

Publication Number Publication Date
KR840000074A true KR840000074A (ko) 1984-01-30
KR860000158B1 KR860000158B1 (ko) 1986-02-27

Family

ID=25747719

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8201833A KR860000158B1 (ko) 1981-04-23 1982-04-23 감광성 내식막에 균일한 정제 패턴을 노출시키는 방법 및 장치

Country Status (11)

Country Link
US (1) US4704348A (ko)
JP (1) JPS57177144A (ko)
KR (1) KR860000158B1 (ko)
CH (1) CH651423A5 (ko)
DD (1) DD160756A3 (ko)
DE (1) DE3214325A1 (ko)
FR (1) FR2504696B1 (ko)
GB (1) GB2100453B (ko)
IT (1) IT8267548A0 (ko)
NL (1) NL8201726A (ko)
SU (1) SU1238274A1 (ko)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999722A (ja) * 1982-11-29 1984-06-08 Canon Inc 半導体焼付露光制御方法
DE3344280A1 (de) * 1982-12-21 1984-07-05 Texas Instruments Inc., Dallas, Tex. Verfahren zur herstellung einer halbleitervorrichtung und vorrichtung zur durchfuehrung des verfahrens
US4897337A (en) * 1983-01-19 1990-01-30 Tokyo Shibaura Denki Kabushiki Kaisha Method and apparatus for forming resist pattern
JPS59140451A (ja) * 1983-02-01 1984-08-11 Yutaka Mori 製版カメラに依る各種印刷版または明室用フイルム等の直接製版方法
DE3447488A1 (de) * 1984-10-19 1986-05-07 Canon K.K., Tokio/Tokyo Projektionseinrichtung
JPS63259663A (ja) * 1987-04-17 1988-10-26 Fuji Photo Film Co Ltd 画像記録装置
US4864356A (en) * 1987-04-21 1989-09-05 Brother Kogyo Kabushiki Kaisha Exposure device for image recording apparatus
US5073796A (en) * 1987-08-31 1991-12-17 Kabushiki Kaisha Toshiba Cooling system for an apparatus with a heat generating element therein
JPH01157527A (ja) * 1987-12-14 1989-06-20 Toshiba Corp フォトレジストのパターン形成方法
DE68921687T2 (de) * 1988-09-02 1995-08-03 Canon Kk Belichtungseinrichtung.
JPH0335542U (ko) * 1989-08-17 1991-04-08
JPH03139634A (ja) * 1989-10-26 1991-06-13 Brother Ind Ltd 画像形成装置
US4989031A (en) * 1990-01-29 1991-01-29 Nikon Corporation Projection exposure apparatus
US5452052A (en) * 1992-03-25 1995-09-19 Matsushita Electric Industrial Co., Ltd. Apparatus for exposing chemically amplified resist
JPH0636993A (ja) * 1992-05-21 1994-02-10 Canon Inc 露光装置及び半導体素子の製造方法
US5696623A (en) * 1993-08-05 1997-12-09 Fujitsu Limited UV exposure with elongated service lifetime
JP3387075B2 (ja) * 1994-12-12 2003-03-17 株式会社ニコン 走査露光方法、露光装置、及び走査型露光装置
DE69618501T2 (de) * 1995-03-08 2002-06-13 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung eines Musters
US5877843A (en) * 1995-09-12 1999-03-02 Nikon Corporation Exposure apparatus
US6297871B1 (en) 1995-09-12 2001-10-02 Nikon Corporation Exposure apparatus
US6645701B1 (en) * 1995-11-22 2003-11-11 Nikon Corporation Exposure method and exposure apparatus
JP4011643B2 (ja) * 1996-01-05 2007-11-21 キヤノン株式会社 半導体製造装置
JPH09218519A (ja) * 1996-02-09 1997-08-19 Nikon Corp 露光装置の環境制御方法及び装置
US6545746B1 (en) * 1996-03-04 2003-04-08 Nikon Corporation Projection exposure apparatus
KR100542414B1 (ko) * 1996-03-27 2006-05-10 가부시키가이샤 니콘 노광장치및공조장치
JP3689510B2 (ja) * 1996-11-15 2005-08-31 キヤノン株式会社 露光装置およびデバイス製造方法
US6714278B2 (en) 1996-11-25 2004-03-30 Nikon Corporation Exposure apparatus
US6882403B1 (en) 1997-04-07 2005-04-19 Nikon Corporation Lithography system and method
KR100636451B1 (ko) 1997-06-10 2006-10-18 가부시키가이샤 니콘 광학 장치 및 그 세정 방법과 투영 노광 장치 및 그 제조방법
JP4026943B2 (ja) * 1997-09-04 2007-12-26 キヤノン株式会社 露光装置およびデバイス製造方法
JPH11224839A (ja) * 1998-02-04 1999-08-17 Canon Inc 露光装置とデバイス製造方法、ならびに該露光装置の光学素子クリーニング方法
WO1999050892A1 (fr) * 1998-03-31 1999-10-07 Nikon Corporation Dispositif optique et systeme d'exposition equipe du dispositif optique
WO2000016381A1 (fr) * 1998-09-14 2000-03-23 Nikon Corporation Appareil d'exposition et son procede de fabrication, et procede de production de dispositif
EP1229573A4 (en) 1999-07-16 2006-11-08 Nikon Corp EXPOSURE METHOD AND SYSTEM
JP2001118783A (ja) * 1999-10-21 2001-04-27 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2001274054A (ja) * 2000-03-24 2001-10-05 Canon Inc 露光装置、半導体デバイス製造方法および半導体デバイス製造工場
JP3869999B2 (ja) 2000-03-30 2007-01-17 キヤノン株式会社 露光装置および半導体デバイス製造方法
JP2002158170A (ja) * 2000-09-08 2002-05-31 Nikon Corp 露光装置及びデバイス製造方法
DE10211611A1 (de) * 2002-03-12 2003-09-25 Zeiss Carl Smt Ag Verfahren und Vorrichtung zur Dekontamination optischer Oberflächen
JP2004128213A (ja) * 2002-10-02 2004-04-22 Canon Inc 温調システム及びそれを組み込んだ露光装置
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
WO2004086470A1 (ja) 2003-03-25 2004-10-07 Nikon Corporation 露光装置及びデバイス製造方法
US7329308B2 (en) * 2003-07-09 2008-02-12 Entegris, Inc. Air handling and chemical filtration system and method
US20060285091A1 (en) * 2003-07-21 2006-12-21 Parekh Bipin S Lithographic projection apparatus, gas purging method, device manufacturing method and purge gas supply system related application
US7384149B2 (en) * 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005142382A (ja) * 2003-11-07 2005-06-02 Canon Inc 露光装置
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
JP2005353762A (ja) * 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 半導体製造装置及びパターン形成方法
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006093428A (ja) * 2004-09-24 2006-04-06 Canon Inc 温調チャンバおよびこれを用いた露光装置
JP4891538B2 (ja) * 2004-11-04 2012-03-07 株式会社日立ハイテクノロジーズ ロードポート
MY139184A (en) * 2004-12-06 2009-08-28 Novartis Ag Method of drying molds
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
KR101942138B1 (ko) * 2005-01-31 2019-01-24 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8018573B2 (en) * 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007281142A (ja) * 2006-04-05 2007-10-25 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
WO2008024263A1 (en) * 2006-08-18 2008-02-28 Entegris, Inc System and method for vortex condensation trapping in purge gas humidification
US7572976B1 (en) * 2008-02-06 2009-08-11 Victor Merrill Quick connect electrical box
NL1036596A1 (nl) * 2008-02-21 2009-08-24 Asml Holding Nv Re-flow and buffer system for immersion lithography.
EP3832391A1 (en) * 2019-12-03 2021-06-09 ASML Netherlands B.V. Clamp assembly
CN115308999B (zh) * 2022-10-12 2023-03-24 苏州矩阵光电有限公司 一种匀胶烘干一体机及匀胶烘干方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3620621A (en) * 1969-02-12 1971-11-16 Matrographics Inc Emulsion control
US4026653A (en) * 1975-05-09 1977-05-31 Bell Telephone Laboratories, Incorporated Proximity printing method
DD127137B1 (de) * 1976-08-17 1979-11-28 Elektromat Veb Vorrichtung zum kompensieren der waermeeinwirkung an justier- und belichtungseinrichtungen
US4185202A (en) * 1977-12-05 1980-01-22 Bell Telephone Laboratories, Incorporated X-ray lithography
US4423137A (en) * 1980-10-28 1983-12-27 Quixote Corporation Contact printing and etching method of making high density recording medium

Also Published As

Publication number Publication date
JPS57177144A (en) 1982-10-30
CH651423A5 (de) 1985-09-13
DD160756A3 (de) 1984-02-29
NL8201726A (nl) 1982-11-16
KR860000158B1 (ko) 1986-02-27
IT8267548A0 (it) 1982-04-26
FR2504696A1 (fr) 1982-10-29
SU1238274A1 (ru) 1986-06-15
US4704348A (en) 1987-11-03
FR2504696B1 (fr) 1985-11-22
GB2100453A (en) 1982-12-22
GB2100453B (en) 1985-03-20
DE3214325A1 (de) 1983-01-27

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