KR840000074A - 감광성 내식막에 균일한 정제 패턴을 노출시키는 방법 및 장치 - Google Patents
감광성 내식막에 균일한 정제 패턴을 노출시키는 방법 및 장치 Download PDFInfo
- Publication number
- KR840000074A KR840000074A KR1019820001833A KR820001833A KR840000074A KR 840000074 A KR840000074 A KR 840000074A KR 1019820001833 A KR1019820001833 A KR 1019820001833A KR 820001833 A KR820001833 A KR 820001833A KR 840000074 A KR840000074 A KR 840000074A
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist
- gas
- exposing
- contact
- humidity
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims 15
- 230000003287 optical effect Effects 0.000 claims 3
- 239000011148 porous material Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- A—HUMAN NECESSITIES
- A44—HABERDASHERY; JEWELLERY
- A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
- A44C11/00—Watch chains; Ornamental chains
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 실시예에 관한 축소 노출장치를 나타낸 도식적 다이아그램, 제3도는 제2도의 장치에 사용된 가습기의 확대 단면도.
Claims (7)
- 적어도 설정된 전지역과 노출기간에 감광성내식막의 수분 함량을 균일하게 만들기 위해 주위대기와 격리되어 감광성내식막과 접촉하는 가스의 습도를 설정범위의 값으로 조절하는 스텝과 상기한 조절상태하에 감광성 내식막을 설정 지역에서 노출시키도록 기공판에 피복된 감광성 내식막 위에 빛을 방사하는 스텝등을 포함하고 있는 가공판에 피복된 감광성 내식막을 노출시키는 방법.
- 제1항에 있어서 감광성 내식막과 접촉하는 가스가 설정온도의 범위으로 조절되는 감광성 내식막을 노출시키는 방법.
- 제1항 및 2항에 있어서 감광성 내식막과 접촉하는 가스의 상대습도가 약 10% 또는 그 이상으로 하는 감광성 내식막을 노출시키는 방법.
- 감광성 내식막에 패턴을 형성하도록 감광성 내식막을 노출시키기 위한 대물렌즐를 가지는 광학계와 상기 대물렌즈와 감광성 내식막 사이의 공간으로 가스를 공급하는 가스공급부와, 가스의 습도를 설정범위 이내로 유지시키기 위해 가스 공급부에 연결된 습도조절기 등을 포함하고 있는 가공판에 피복된 감광성 내식막을 노출시키는 장치.
- 제4항에 있어서 가스 공급부는 가스 공급원과, 감광성 내식막에 가스를 분출하기 위한 가스분출 노즐과 광학계의 촛점을 조정하는 공기 측미계등을 구비하고, 습도조절기가 가스 공급원과 가스 분출노즐 사이에 설치되게 한 감광성 내식막을 노출시키는 장치.
- 제4항에 있어서, 가스 공급부는 광학계의 가공판의 대물렌즈를 적어도 부분적으로 밀폐하고 있는 케이징을 가지고 있으며, 가스가 케이징으로 분출되어 감광성 내식막의 표면과 접촉되게 한 감광성 내식막을 노출시키는 장치.
- 제4항, 제5항 및 6항에 있어서 가습조절기가 가스를 가습하기 위해 물을 담고 있는 용기을 갖고 있어 그 용기 내부가, 가스가 통과하는 통로의 일부로 형성되게 한 감광성 내식막을 노출시키는 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DD81229475A DD160756A3 (de) | 1981-04-24 | 1981-04-24 | Anordnung zur verbesserung fotochemischer umsetzungsprozesse in fotoresistschichten |
DEWPG02B/229475/3 | 1981-04-24 | ||
JP56154059A JPS57177144A (en) | 1981-04-24 | 1981-09-30 | Method and device for exposure |
Publications (2)
Publication Number | Publication Date |
---|---|
KR840000074A true KR840000074A (ko) | 1984-01-30 |
KR860000158B1 KR860000158B1 (ko) | 1986-02-27 |
Family
ID=25747719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR8201833A KR860000158B1 (ko) | 1981-04-23 | 1982-04-23 | 감광성 내식막에 균일한 정제 패턴을 노출시키는 방법 및 장치 |
Country Status (11)
Country | Link |
---|---|
US (1) | US4704348A (ko) |
JP (1) | JPS57177144A (ko) |
KR (1) | KR860000158B1 (ko) |
CH (1) | CH651423A5 (ko) |
DD (1) | DD160756A3 (ko) |
DE (1) | DE3214325A1 (ko) |
FR (1) | FR2504696B1 (ko) |
GB (1) | GB2100453B (ko) |
IT (1) | IT8267548A0 (ko) |
NL (1) | NL8201726A (ko) |
SU (1) | SU1238274A1 (ko) |
Families Citing this family (62)
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JPS5999722A (ja) * | 1982-11-29 | 1984-06-08 | Canon Inc | 半導体焼付露光制御方法 |
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US4897337A (en) * | 1983-01-19 | 1990-01-30 | Tokyo Shibaura Denki Kabushiki Kaisha | Method and apparatus for forming resist pattern |
JPS59140451A (ja) * | 1983-02-01 | 1984-08-11 | Yutaka Mori | 製版カメラに依る各種印刷版または明室用フイルム等の直接製版方法 |
DE3447488A1 (de) * | 1984-10-19 | 1986-05-07 | Canon K.K., Tokio/Tokyo | Projektionseinrichtung |
JPS63259663A (ja) * | 1987-04-17 | 1988-10-26 | Fuji Photo Film Co Ltd | 画像記録装置 |
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JPH01157527A (ja) * | 1987-12-14 | 1989-06-20 | Toshiba Corp | フォトレジストのパターン形成方法 |
DE68921687T2 (de) * | 1988-09-02 | 1995-08-03 | Canon Kk | Belichtungseinrichtung. |
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US5696623A (en) * | 1993-08-05 | 1997-12-09 | Fujitsu Limited | UV exposure with elongated service lifetime |
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DE69618501T2 (de) * | 1995-03-08 | 2002-06-13 | Matsushita Electric Ind Co Ltd | Verfahren zur Herstellung eines Musters |
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JP4011643B2 (ja) * | 1996-01-05 | 2007-11-21 | キヤノン株式会社 | 半導体製造装置 |
JPH09218519A (ja) * | 1996-02-09 | 1997-08-19 | Nikon Corp | 露光装置の環境制御方法及び装置 |
US6545746B1 (en) * | 1996-03-04 | 2003-04-08 | Nikon Corporation | Projection exposure apparatus |
KR100542414B1 (ko) * | 1996-03-27 | 2006-05-10 | 가부시키가이샤 니콘 | 노광장치및공조장치 |
JP3689510B2 (ja) * | 1996-11-15 | 2005-08-31 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
US6714278B2 (en) | 1996-11-25 | 2004-03-30 | Nikon Corporation | Exposure apparatus |
US6882403B1 (en) | 1997-04-07 | 2005-04-19 | Nikon Corporation | Lithography system and method |
KR100636451B1 (ko) | 1997-06-10 | 2006-10-18 | 가부시키가이샤 니콘 | 광학 장치 및 그 세정 방법과 투영 노광 장치 및 그 제조방법 |
JP4026943B2 (ja) * | 1997-09-04 | 2007-12-26 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
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JP2001118783A (ja) * | 1999-10-21 | 2001-04-27 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
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DE10211611A1 (de) * | 2002-03-12 | 2003-09-25 | Zeiss Carl Smt Ag | Verfahren und Vorrichtung zur Dekontamination optischer Oberflächen |
JP2004128213A (ja) * | 2002-10-02 | 2004-04-22 | Canon Inc | 温調システム及びそれを組み込んだ露光装置 |
AU2003295177A1 (en) | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
WO2004086470A1 (ja) | 2003-03-25 | 2004-10-07 | Nikon Corporation | 露光装置及びデバイス製造方法 |
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US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005142382A (ja) * | 2003-11-07 | 2005-06-02 | Canon Inc | 露光装置 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
JP2005353762A (ja) * | 2004-06-09 | 2005-12-22 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びパターン形成方法 |
US7304715B2 (en) | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006093428A (ja) * | 2004-09-24 | 2006-04-06 | Canon Inc | 温調チャンバおよびこれを用いた露光装置 |
JP4891538B2 (ja) * | 2004-11-04 | 2012-03-07 | 株式会社日立ハイテクノロジーズ | ロードポート |
MY139184A (en) * | 2004-12-06 | 2009-08-28 | Novartis Ag | Method of drying molds |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
KR101942138B1 (ko) * | 2005-01-31 | 2019-01-24 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US8018573B2 (en) * | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007281142A (ja) * | 2006-04-05 | 2007-10-25 | Canon Inc | 露光装置及び方法、並びに、デバイス製造方法 |
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EP3832391A1 (en) * | 2019-12-03 | 2021-06-09 | ASML Netherlands B.V. | Clamp assembly |
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US4423137A (en) * | 1980-10-28 | 1983-12-27 | Quixote Corporation | Contact printing and etching method of making high density recording medium |
-
1981
- 1981-04-24 DD DD81229475A patent/DD160756A3/de not_active IP Right Cessation
- 1981-09-30 JP JP56154059A patent/JPS57177144A/ja active Pending
-
1982
- 1982-04-19 DE DE19823214325 patent/DE3214325A1/de not_active Withdrawn
- 1982-04-22 GB GB8211674A patent/GB2100453B/en not_active Expired
- 1982-04-23 FR FR8206998A patent/FR2504696B1/fr not_active Expired
- 1982-04-23 SU SU823431330A patent/SU1238274A1/ru active
- 1982-04-23 KR KR8201833A patent/KR860000158B1/ko active
- 1982-04-23 CH CH2488/82A patent/CH651423A5/de not_active IP Right Cessation
- 1982-04-26 IT IT8267548A patent/IT8267548A0/it unknown
- 1982-04-26 NL NL8201726A patent/NL8201726A/nl not_active Application Discontinuation
-
1985
- 1985-09-25 US US06/779,832 patent/US4704348A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS57177144A (en) | 1982-10-30 |
CH651423A5 (de) | 1985-09-13 |
DD160756A3 (de) | 1984-02-29 |
NL8201726A (nl) | 1982-11-16 |
KR860000158B1 (ko) | 1986-02-27 |
IT8267548A0 (it) | 1982-04-26 |
FR2504696A1 (fr) | 1982-10-29 |
SU1238274A1 (ru) | 1986-06-15 |
US4704348A (en) | 1987-11-03 |
FR2504696B1 (fr) | 1985-11-22 |
GB2100453A (en) | 1982-12-22 |
GB2100453B (en) | 1985-03-20 |
DE3214325A1 (de) | 1983-01-27 |
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