KR830008402A - 다중 셀의 감광성 부정형 합금 및 소자 - Google Patents
다중 셀의 감광성 부정형 합금 및 소자 Download PDFInfo
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- KR830008402A KR830008402A KR1019810003330A KR810003330A KR830008402A KR 830008402 A KR830008402 A KR 830008402A KR 1019810003330 A KR1019810003330 A KR 1019810003330A KR 810003330 A KR810003330 A KR 810003330A KR 830008402 A KR830008402 A KR 830008402A
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- 239000000956 alloy Substances 0.000 title claims description 15
- 229910045601 alloy Inorganic materials 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000000969 carrier Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
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Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 본 발명에 대한 적층된 다중 셀소자의 구체적인 실시예를 도시한다.
제7도는 본 발명에 대한 직렬 또는 수직으로 적층된 다중 셀 소자의 한가지 구체적인 실시예를 도시한다.
제8도는 복수개의 쇼트키 배리어 솔라 셀들로 구성된 본 발명을 구체화하는 적층된 다중 셀 소자의 부분 단면도이며, 각각의 솔라 셀은 본 발명에 따른 비정형 반도체 수광성 합금을 포함하고 있다.
제9도는 복수개의 쇼트키 배리어 솔라 셀들로 구성된 직렬 또는 수직으로 적층된 다중 셀 소자의 부분 단면도이며, 각각의 솔라 셀은 본 발명에 따른 비정형 반도체 합금을 포함하고 있다.
제10도는 복수개의 p-i-n형 솔라 셀들로 구성된 적층된 다중 셀 소자의 부분적 단면도이며, 각각의 솔라 셀은 본 발명에 따른 비정형 반도체 합금을 포함하고 있다.
Claims (13)
- 적어도 두개의 셀을 가지는 개선된 다중셀 광감성 비정형 소자에 있어서, 상술한 각 셀은 실리콘을 함유하는 합금을 포함하고 있고 적어도 상태 밀도를 감소시키는 하나의 원소인 불소를 그 속에 포함하고 있으며, 상술한 각 셀 합금(146a,146b,146c,168a,168b,168c,184,189,191,209a,209b,109c,211a,211b,211c)은 갭에서의 상태를 실질적으로 증가시키지 않고 그 속에 포함된 밴드 갭 조정원소를 가지며, 상술한 각 셀 합금은 각각의 다른 셀 합금들과는 다른 특정한 광감성 파장함수를 갖도록 조정된 밴드갭을 가지는 것이 특징인 개선된 다중셀 광감성 비정형 소자.
- 개선된 광감성 다중셀 소자에 있어서, 상술한 소자는 여거가지 물질들로 이루어진 적어도 두개의 중첩된 셀로 구성되어 있으며, 적어도 하나의 셀은 태양복사가 방저캐리어들을 만들도록 드 위에 충돌할 수 있는 밴드 갭을 내포하는 능동 광감성 영역을 가지는 비정형 반도체 다층합금을 포함하고 있으며, 상술한 합금은 적어도 상태밀도를 감소시키는 하나의 원소인 불소를 함유하고 있으며, 상술한 영역(146a,146b,146c,168a,168b,168c,184,189,191,209a,209b,109c,211a,211b,211c,211)은 갭에서의 상태를 실질적으로 증가시키지 않고 그 곳에서의 복사흡수를 보강하도록 적어도 전기한 광감성 영역(146a,146b,146c,168a,168b,168c,184,191,201,211a,211b,211c)에는 밴드 갶 조정원소를 함유하고 있으며, 상술한 합금의 밴드캪은 전기한 두번째 셀(142a,142b,142c,143,143′,145,147,147′,154a,154b,154c,166a,166b,166c, 181a,181b,207a,207b,207c)과 다른 특정한 광감성 파장함수를 가지도록 조정되는 것이 특징인 개선된 광감성 가중셀 소자.
- 청구범위 제1항이나 제2항에 따른 다중셀에 있어서, 전기한 조정원소가 게르만늄, 주석, 탄소 또는 질소로 구성된 그룹중의 하나라는 것이 또 다른 특징인 다중셀.
- 청구범위 제1항에서 제3항까지의 어느 하나에 따른 다중셀에 있어서, 전기한 각 셀 합금이 농동광감성 영역을 그곳에 가지고 있고, 전기한 조정원소가 적어도 전시한 영역(146a,146b,146c,168a,168b,168c,184,191,201,211a,211b,211c)에 함유하고 있다는 것이 또 다른 특징인 다중셀.
- 청구범위 제1항에서 제4항까지의 어느 하나에 따른 다중셀에 있어서, 적어도 하나의 셀(142a,142b,142c,1143,143′,145,145',147,147′,154a,154b,154c,166a,166b,166c, 181a,181b,181c,207a,207b,207c)이 그 곳에 포함된 상태밀도를 감소시키는 두번째의 원소인 수소를 함유하고 있다는 것이 또 다른 특징인 다중셀.
- 청구범위 제1항에 서 제5항까지의 어느 하나에 따른 다중셀에 있어서, 적어도 하나의 셀(142a,142b,142c,143,143′,145,145,147,147′,154a,154b,154c,166a,166b,166c, 181a,181b,181c,207a,207b,207c)이 글로구 방전 피착법에 의해 피착된다는 것이 또 다른 특징인 다중셀.
- 청구범위 제1항에서 제6항까지의 어느 하나에 따른 다중셀에 있어서, 적어도 하나에 셀(142a,142b,142c,143,143′,145,145',147,147′,154a,154b,154c,166a,166b,166c, 181a,181b,181c,207a,207b,207c)이 실질적으로 분리된 층들내에 전기한 조정원소를 함유하고 있다는 것이 또 다른 특징인 다중셀.
- 청구범위 제1항에서 제7항까지의 어느 하나에 따른 다중셀에 있어서, 적어도 하나의 셀(142a,142b,142c,143,143′,145,145',147,147′,154a,154b,154c,166a,166b,166c, 181a,181b,181c,207a,207b,207c)이 조절할 수 있는 량의 전기한 조정원소들을 함유한다는 것이또 다른 특징인 다중셀.
- 청구범위 제4항에서 제8항까지의 어느 하나에 따른 소자에 있어서 전기한 광감성 영역 (146a,146b,146c,168a,168b,168c,184,191,201,211a,211b,211c)의 밴드캪이 1.6eV보다 작다는 것이 또 다른 특징인 소자.
- 청구범위 제1항에서 제9항까지의 어느 하나에 따른 소자에 있어서, 전기한 조정원소가 게르마늄이 라는 것이 또 다른 특징인 소자.
- 청구범위 제1항에서 제10항까지의 어느 하나에 따른 소자에 있어서, 전기한 합금이 쇼트키 배리어솔라셀(142a,142b,142c,154a,154b,154c,166a,166b,166c)의 일부를 형성한다는 것이 또 다른 특징인 소자.
- 청구범위 제1항에서 제11항까지의 어느 하나에 따른 소자에 있어서, 전기한 합금이 MIS솔라셀(142a)의 일부를 형성한다는 것이 또 다른 특징인 소자.
- 청구범위 제1항에서 제12항까지의 어느 하나에 따른 소자에 있어서, 전기한 합금이 p-i-n소자(180,206)의 일부를 형성한다는 것이 또 다른 특징인 소자.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US185520 | 1980-09-09 | ||
US06/185,520 US4342044A (en) | 1978-03-08 | 1980-09-09 | Method for optimizing photoresponsive amorphous alloys and devices |
US20658080A | 1980-11-13 | 1980-11-13 | |
US206580 | 1980-11-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR830008402A true KR830008402A (ko) | 1983-11-18 |
KR890004497B1 KR890004497B1 (ko) | 1989-11-06 |
Family
ID=26881212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019810003330A KR890004497B1 (ko) | 1980-09-09 | 1981-09-07 | 다중 셀의 감광성 비정질 합금 및 소자 |
Country Status (14)
Country | Link |
---|---|
KR (1) | KR890004497B1 (ko) |
AU (1) | AU547646B2 (ko) |
BR (1) | BR8105748A (ko) |
CA (1) | CA1172742A (ko) |
DE (1) | DE3135353A1 (ko) |
ES (1) | ES8302365A1 (ko) |
FR (1) | FR2490013B1 (ko) |
GB (1) | GB2083705B (ko) |
IE (1) | IE52209B1 (ko) |
IL (1) | IL63756A0 (ko) |
IN (1) | IN157288B (ko) |
IT (1) | IT1138583B (ko) |
NL (1) | NL8104138A (ko) |
SE (1) | SE451353B (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58139478A (ja) * | 1982-02-15 | 1983-08-18 | Agency Of Ind Science & Technol | アモルフアス太陽電池 |
DE3308269A1 (de) * | 1983-03-09 | 1984-09-13 | Licentia Patent-Verwaltungs-Gmbh | Solarzelle |
AU2549384A (en) * | 1983-03-11 | 1984-09-13 | Exxon Research And Engineering Company | Multi-layered amorphous semiconductor material |
US4598164A (en) * | 1983-10-06 | 1986-07-01 | Exxon Research And Engineering Co. | Solar cell made from amorphous superlattice material |
JPS6177375A (ja) * | 1984-09-21 | 1986-04-19 | Sharp Corp | カラ−センサ |
US4638111A (en) * | 1985-06-04 | 1987-01-20 | Atlantic Richfield Company | Thin film solar cell module |
US4713493A (en) * | 1985-10-11 | 1987-12-15 | Energy Conversion Devices, Inc. | Power generating optical filter |
JPS62136885A (ja) * | 1985-12-11 | 1987-06-19 | Canon Inc | 光起電力素子、その製造方法及びその製造装置 |
JPS62136871A (ja) * | 1985-12-11 | 1987-06-19 | Canon Inc | 光センサ−、その製造方法及びその製造装置 |
JPH0651906B2 (ja) * | 1985-12-25 | 1994-07-06 | キヤノン株式会社 | 堆積膜形成法 |
JPH0647730B2 (ja) * | 1985-12-25 | 1994-06-22 | キヤノン株式会社 | 堆積膜形成法 |
JPH0746729B2 (ja) * | 1985-12-26 | 1995-05-17 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
JPH0651908B2 (ja) * | 1985-12-28 | 1994-07-06 | キヤノン株式会社 | 薄膜多層構造の形成方法 |
JP2566914B2 (ja) * | 1985-12-28 | 1996-12-25 | キヤノン株式会社 | 薄膜半導体素子及びその形成法 |
EP0248953A1 (en) * | 1986-06-10 | 1987-12-16 | The Standard Oil Company | Tandem photovoltaic devices |
DD292519A5 (de) * | 1990-03-13 | 1991-08-01 | Veb Feinmesszeugfabrik Suhl,De | Transparentes fotoelektrisches element |
NL1000264C2 (nl) * | 1995-05-01 | 1996-11-04 | Frans Willem Saris | Zonnecel met meerlaagsstructuur van dunne films silicium. |
GB0519599D0 (en) * | 2005-09-26 | 2005-11-02 | Imp College Innovations Ltd | Photovoltaic cells |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4342044A (en) * | 1978-03-08 | 1982-07-27 | Energy Conversion Devices, Inc. | Method for optimizing photoresponsive amorphous alloys and devices |
JPS5513938A (en) | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
IE52208B1 (en) * | 1980-09-09 | 1987-08-05 | Energy Conversion Devices Inc | Method for increasing the band gap in photoresponsive amorphous alloys and devices |
-
1981
- 1981-09-07 FR FR8116958A patent/FR2490013B1/fr not_active Expired
- 1981-09-07 IN IN1005/CAL/81A patent/IN157288B/en unknown
- 1981-09-07 IL IL63756A patent/IL63756A0/xx not_active IP Right Cessation
- 1981-09-07 IT IT23829/81A patent/IT1138583B/it active
- 1981-09-07 NL NL8104138A patent/NL8104138A/nl not_active Application Discontinuation
- 1981-09-07 SE SE8105279A patent/SE451353B/sv not_active IP Right Cessation
- 1981-09-07 KR KR1019810003330A patent/KR890004497B1/ko active
- 1981-09-07 DE DE19813135353 patent/DE3135353A1/de not_active Ceased
- 1981-09-07 GB GB8126968A patent/GB2083705B/en not_active Expired
- 1981-09-07 ES ES505270A patent/ES8302365A1/es not_active Expired
- 1981-09-07 IE IE2065/81A patent/IE52209B1/en not_active IP Right Cessation
- 1981-09-08 BR BR8105748A patent/BR8105748A/pt unknown
- 1981-09-08 CA CA000385346A patent/CA1172742A/en not_active Expired
- 1981-09-08 AU AU75018/81A patent/AU547646B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
AU7501881A (en) | 1982-03-18 |
NL8104138A (nl) | 1982-04-01 |
AU547646B2 (en) | 1985-10-31 |
FR2490013B1 (fr) | 1985-11-08 |
CA1172742A (en) | 1984-08-14 |
FR2490013A1 (fr) | 1982-03-12 |
DE3135353A1 (de) | 1982-07-08 |
GB2083705A (en) | 1982-03-24 |
IL63756A0 (en) | 1981-12-31 |
ES505270A0 (es) | 1982-12-16 |
KR890004497B1 (ko) | 1989-11-06 |
IT1138583B (it) | 1986-09-17 |
IE812065L (en) | 1982-03-09 |
IE52209B1 (en) | 1987-08-05 |
ES8302365A1 (es) | 1982-12-16 |
SE8105279L (sv) | 1982-03-10 |
IN157288B (ko) | 1986-02-22 |
BR8105748A (pt) | 1982-05-25 |
SE451353B (sv) | 1987-09-28 |
IT8123829A0 (it) | 1981-09-07 |
GB2083705B (en) | 1985-07-03 |
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