KR830000497B1 - 고전압 접합 솔리드 스테이트 스위치 - Google Patents

고전압 접합 솔리드 스테이트 스위치 Download PDF

Info

Publication number
KR830000497B1
KR830000497B1 KR7904541A KR790004541A KR830000497B1 KR 830000497 B1 KR830000497 B1 KR 830000497B1 KR 7904541 A KR7904541 A KR 7904541A KR 790004541 A KR790004541 A KR 790004541A KR 830000497 B1 KR830000497 B1 KR 830000497B1
Authority
KR
South Korea
Prior art keywords
region
cathode
anode
regions
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR7904541A
Other languages
English (en)
Korean (ko)
Inventor
랠프 하트만 아드리안
토마스 머피 버나드
제임스 릴리 테렌스
윌리암 색클 피터
Original Assignee
알. 씨. 윈 터
웨스턴 이레트릭 컴패니, 인코페레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 알. 씨. 윈 터, 웨스턴 이레트릭 컴패니, 인코페레이티드 filed Critical 알. 씨. 윈 터
Application granted granted Critical
Publication of KR830000497B1 publication Critical patent/KR830000497B1/ko
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G25/00—Watering gardens, fields, sports grounds or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Water Supply & Treatment (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
KR7904541A 1978-12-20 1979-12-20 고전압 접합 솔리드 스테이트 스위치 Expired KR830000497B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97188678A 1978-12-20 1978-12-20
US????971886 1978-12-20

Publications (1)

Publication Number Publication Date
KR830000497B1 true KR830000497B1 (ko) 1983-03-10

Family

ID=25518914

Family Applications (1)

Application Number Title Priority Date Filing Date
KR7904541A Expired KR830000497B1 (ko) 1978-12-20 1979-12-20 고전압 접합 솔리드 스테이트 스위치

Country Status (22)

Country Link
JP (1) JPS55501041A (enrdf_load_stackoverflow)
KR (1) KR830000497B1 (enrdf_load_stackoverflow)
AU (1) AU529486B2 (enrdf_load_stackoverflow)
BE (1) BE880727A (enrdf_load_stackoverflow)
CA (1) CA1131800A (enrdf_load_stackoverflow)
CH (1) CH659152A5 (enrdf_load_stackoverflow)
DD (1) DD147898A5 (enrdf_load_stackoverflow)
ES (1) ES487065A1 (enrdf_load_stackoverflow)
FR (1) FR2445028B1 (enrdf_load_stackoverflow)
GB (1) GB2049282B (enrdf_load_stackoverflow)
HK (1) HK69284A (enrdf_load_stackoverflow)
HU (1) HU181028B (enrdf_load_stackoverflow)
IE (1) IE48719B1 (enrdf_load_stackoverflow)
IL (1) IL58973A (enrdf_load_stackoverflow)
IN (1) IN152898B (enrdf_load_stackoverflow)
IT (1) IT1126602B (enrdf_load_stackoverflow)
NL (1) NL7920185A (enrdf_load_stackoverflow)
PL (1) PL220496A1 (enrdf_load_stackoverflow)
SE (1) SE438577B (enrdf_load_stackoverflow)
SG (1) SG34884G (enrdf_load_stackoverflow)
TR (1) TR21213A (enrdf_load_stackoverflow)
WO (1) WO1980001338A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933432B1 (enrdf_load_stackoverflow) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5011389A (enrdf_load_stackoverflow) * 1973-05-30 1975-02-05
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS5168777A (en) * 1974-12-11 1976-06-14 Fujitsu Ltd Fuseiteikohandotaisochi
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes

Also Published As

Publication number Publication date
JPS55501041A (enrdf_load_stackoverflow) 1980-11-27
CH659152A5 (de) 1986-12-31
BE880727A (fr) 1980-04-16
IE48719B1 (en) 1985-05-01
TR21213A (tr) 1984-01-02
IN152898B (enrdf_load_stackoverflow) 1984-04-28
FR2445028A1 (fr) 1980-07-18
GB2049282B (en) 1983-05-18
SG34884G (en) 1985-11-15
WO1980001338A1 (en) 1980-06-26
DD147898A5 (de) 1981-04-22
FR2445028B1 (fr) 1985-10-11
AU5386879A (en) 1980-06-26
AU529486B2 (en) 1983-06-09
SE8005746L (sv) 1980-08-14
GB2049282A (en) 1980-12-17
HU181028B (en) 1983-05-30
IL58973A (en) 1982-07-30
HK69284A (en) 1984-09-14
IT7928205A0 (it) 1979-12-19
IL58973A0 (en) 1980-03-31
PL220496A1 (enrdf_load_stackoverflow) 1980-09-08
CA1131800A (en) 1982-09-14
SE438577B (sv) 1985-04-22
IT1126602B (it) 1986-05-21
NL7920185A (nl) 1980-10-31
IE792473L (en) 1980-06-20
ES487065A1 (es) 1980-09-16

Similar Documents

Publication Publication Date Title
US6943408B2 (en) Semiconductor bidirectional switching device
US5349230A (en) Diode circuit for high speed switching transistor
JPH0669423A (ja) 半導体部品
US4132996A (en) Electric field-controlled semiconductor device
US4608590A (en) High voltage dielectrically isolated solid-state switch
EP1022785B1 (en) Electronic semiconductor power device with integrated diode
SE455552B (sv) Halvledaranordning innefattande en overspenningsskyddskrets
KR100476849B1 (ko) 전계 형성 영역을 포함한 반도체 스위칭 소자
US5587595A (en) Lateral field-effect-controlled semiconductor device on insulating substrate
US6023078A (en) Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability
US4587656A (en) High voltage solid-state switch
US4587545A (en) High voltage dielectrically isolated remote gate solid-state switch
US4502072A (en) FET Controlled thyristor
US4309715A (en) Integral turn-on high voltage switch
KR830000497B1 (ko) 고전압 접합 솔리드 스테이트 스위치
EP0064614B1 (en) Improved emitter structure for semiconductor devices
US4602268A (en) High voltage dielectrically isolated dual gate solid-state switch
CA1191969A (en) Solid-state relay
KR830002293B1 (ko) 고압용 게이트 다이오드 스위치
US4586073A (en) High voltage junction solid-state switch
EP0231895A2 (en) Gate turn-off thyristor
US5760424A (en) Integrated circuit arrangement having at least one IGBT
KR840002413B1 (ko) 고전압 솔리드스테이트 스위치
US20250260225A1 (en) Protection circuit
US20240321862A1 (en) Semiconductor device

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 19890311

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 19890311