GB2049282B - High voltage junction solid-state switch - Google Patents

High voltage junction solid-state switch

Info

Publication number
GB2049282B
GB2049282B GB8025969A GB8025969A GB2049282B GB 2049282 B GB2049282 B GB 2049282B GB 8025969 A GB8025969 A GB 8025969A GB 8025969 A GB8025969 A GB 8025969A GB 2049282 B GB2049282 B GB 2049282B
Authority
GB
United Kingdom
Prior art keywords
high voltage
state switch
voltage junction
junction solid
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8025969A
Other languages
English (en)
Other versions
GB2049282A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB2049282A publication Critical patent/GB2049282A/en
Application granted granted Critical
Publication of GB2049282B publication Critical patent/GB2049282B/en
Expired legal-status Critical Current

Links

Classifications

    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G25/00—Watering gardens, fields, sports grounds or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Water Supply & Treatment (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
GB8025969A 1978-12-20 1979-12-06 High voltage junction solid-state switch Expired GB2049282B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97188678A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
GB2049282A GB2049282A (en) 1980-12-17
GB2049282B true GB2049282B (en) 1983-05-18

Family

ID=25518914

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8025969A Expired GB2049282B (en) 1978-12-20 1979-12-06 High voltage junction solid-state switch

Country Status (22)

Country Link
JP (1) JPS55501041A (enrdf_load_stackoverflow)
KR (1) KR830000497B1 (enrdf_load_stackoverflow)
AU (1) AU529486B2 (enrdf_load_stackoverflow)
BE (1) BE880727A (enrdf_load_stackoverflow)
CA (1) CA1131800A (enrdf_load_stackoverflow)
CH (1) CH659152A5 (enrdf_load_stackoverflow)
DD (1) DD147898A5 (enrdf_load_stackoverflow)
ES (1) ES487065A1 (enrdf_load_stackoverflow)
FR (1) FR2445028B1 (enrdf_load_stackoverflow)
GB (1) GB2049282B (enrdf_load_stackoverflow)
HK (1) HK69284A (enrdf_load_stackoverflow)
HU (1) HU181028B (enrdf_load_stackoverflow)
IE (1) IE48719B1 (enrdf_load_stackoverflow)
IL (1) IL58973A (enrdf_load_stackoverflow)
IN (1) IN152898B (enrdf_load_stackoverflow)
IT (1) IT1126602B (enrdf_load_stackoverflow)
NL (1) NL7920185A (enrdf_load_stackoverflow)
PL (1) PL220496A1 (enrdf_load_stackoverflow)
SE (1) SE438577B (enrdf_load_stackoverflow)
SG (1) SG34884G (enrdf_load_stackoverflow)
TR (1) TR21213A (enrdf_load_stackoverflow)
WO (1) WO1980001338A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933432B1 (enrdf_load_stackoverflow) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5011389A (enrdf_load_stackoverflow) * 1973-05-30 1975-02-05
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS5168777A (en) * 1974-12-11 1976-06-14 Fujitsu Ltd Fuseiteikohandotaisochi
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes

Also Published As

Publication number Publication date
CA1131800A (en) 1982-09-14
ES487065A1 (es) 1980-09-16
IT7928205A0 (it) 1979-12-19
FR2445028A1 (fr) 1980-07-18
HU181028B (en) 1983-05-30
PL220496A1 (enrdf_load_stackoverflow) 1980-09-08
AU529486B2 (en) 1983-06-09
GB2049282A (en) 1980-12-17
SE8005746L (sv) 1980-08-14
IE48719B1 (en) 1985-05-01
DD147898A5 (de) 1981-04-22
TR21213A (tr) 1984-01-02
IT1126602B (it) 1986-05-21
IE792473L (en) 1980-06-20
IL58973A (en) 1982-07-30
KR830000497B1 (ko) 1983-03-10
BE880727A (fr) 1980-04-16
IN152898B (enrdf_load_stackoverflow) 1984-04-28
HK69284A (en) 1984-09-14
FR2445028B1 (fr) 1985-10-11
WO1980001338A1 (en) 1980-06-26
AU5386879A (en) 1980-06-26
SE438577B (sv) 1985-04-22
IL58973A0 (en) 1980-03-31
SG34884G (en) 1985-11-15
CH659152A5 (de) 1986-12-31
NL7920185A (nl) 1980-10-31
JPS55501041A (enrdf_load_stackoverflow) 1980-11-27

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee