CH659152A5 - Festkoerper-schaltvorrichtung und schaltungsanordnung mit wenigstens zwei solcher festkoerper-schaltvorrichtungen. - Google Patents
Festkoerper-schaltvorrichtung und schaltungsanordnung mit wenigstens zwei solcher festkoerper-schaltvorrichtungen. Download PDFInfo
- Publication number
- CH659152A5 CH659152A5 CH6267/80A CH626780A CH659152A5 CH 659152 A5 CH659152 A5 CH 659152A5 CH 6267/80 A CH6267/80 A CH 6267/80A CH 626780 A CH626780 A CH 626780A CH 659152 A5 CH659152 A5 CH 659152A5
- Authority
- CH
- Switzerland
- Prior art keywords
- zone
- zones
- conductivity type
- semiconductor body
- gate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G25/00—Watering gardens, fields, sports grounds or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
- H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/676—Combinations of only thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Water Supply & Treatment (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97188678A | 1978-12-20 | 1978-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH659152A5 true CH659152A5 (de) | 1986-12-31 |
Family
ID=25518914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH6267/80A CH659152A5 (de) | 1978-12-20 | 1979-12-06 | Festkoerper-schaltvorrichtung und schaltungsanordnung mit wenigstens zwei solcher festkoerper-schaltvorrichtungen. |
Country Status (22)
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3017313A1 (de) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933432B1 (enrdf_load_stackoverflow) * | 1968-12-20 | 1974-09-06 | ||
| DE2102103A1 (de) * | 1970-01-22 | 1971-07-29 | Rca Corp | Durch Feldeffekt gesteuerte Diode |
| US3722079A (en) * | 1970-06-05 | 1973-03-27 | Radiation Inc | Process for forming buried layers to reduce collector resistance in top contact transistors |
| DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
| JPS5011389A (enrdf_load_stackoverflow) * | 1973-05-30 | 1975-02-05 | ||
| US3911463A (en) * | 1974-01-07 | 1975-10-07 | Gen Electric | Planar unijunction transistor |
| US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
| JPS5168777A (en) * | 1974-12-11 | 1976-06-14 | Fujitsu Ltd | Fuseiteikohandotaisochi |
| JPS5250176A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
| GB1587540A (en) * | 1977-12-20 | 1981-04-08 | Philips Electronic Associated | Gate turn-off diodes and arrangements including such diodes |
-
1979
- 1979-11-28 CA CA340,799A patent/CA1131800A/en not_active Expired
- 1979-12-06 WO PCT/US1979/001044 patent/WO1980001338A1/en unknown
- 1979-12-06 JP JP50020880A patent/JPS55501041A/ja active Pending
- 1979-12-06 GB GB8025969A patent/GB2049282B/en not_active Expired
- 1979-12-06 CH CH6267/80A patent/CH659152A5/de not_active IP Right Cessation
- 1979-12-06 NL NL7920185A patent/NL7920185A/nl not_active Application Discontinuation
- 1979-12-10 HU HU79WE612A patent/HU181028B/hu unknown
- 1979-12-14 DD DD79217695A patent/DD147898A5/de unknown
- 1979-12-14 AU AU53868/79A patent/AU529486B2/en not_active Ceased
- 1979-12-17 IL IL58973A patent/IL58973A/xx unknown
- 1979-12-18 PL PL22049679A patent/PL220496A1/xx unknown
- 1979-12-18 FR FR7930941A patent/FR2445028B1/fr not_active Expired
- 1979-12-18 TR TR21213A patent/TR21213A/xx unknown
- 1979-12-19 IE IE2473/79A patent/IE48719B1/en unknown
- 1979-12-19 ES ES487065A patent/ES487065A1/es not_active Expired
- 1979-12-19 IT IT28205/79A patent/IT1126602B/it active
- 1979-12-19 BE BE0/198640A patent/BE880727A/fr not_active IP Right Cessation
- 1979-12-20 KR KR7904541A patent/KR830000497B1/ko not_active Expired
-
1980
- 1980-08-14 SE SE8005746A patent/SE438577B/sv not_active IP Right Cessation
- 1980-11-28 IN IN1327/CAL/80A patent/IN152898B/en unknown
-
1984
- 1984-05-04 SG SG348/84A patent/SG34884G/en unknown
- 1984-09-06 HK HK692/84A patent/HK69284A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2049282B (en) | 1983-05-18 |
| SE8005746L (sv) | 1980-08-14 |
| WO1980001338A1 (en) | 1980-06-26 |
| HK69284A (en) | 1984-09-14 |
| GB2049282A (en) | 1980-12-17 |
| SG34884G (en) | 1985-11-15 |
| IT7928205A0 (it) | 1979-12-19 |
| IE792473L (en) | 1980-06-20 |
| ES487065A1 (es) | 1980-09-16 |
| KR830000497B1 (ko) | 1983-03-10 |
| DD147898A5 (de) | 1981-04-22 |
| IT1126602B (it) | 1986-05-21 |
| NL7920185A (nl) | 1980-10-31 |
| FR2445028B1 (fr) | 1985-10-11 |
| FR2445028A1 (fr) | 1980-07-18 |
| CA1131800A (en) | 1982-09-14 |
| TR21213A (tr) | 1984-01-02 |
| IL58973A (en) | 1982-07-30 |
| JPS55501041A (enrdf_load_stackoverflow) | 1980-11-27 |
| HU181028B (en) | 1983-05-30 |
| AU529486B2 (en) | 1983-06-09 |
| IN152898B (enrdf_load_stackoverflow) | 1984-04-28 |
| BE880727A (fr) | 1980-04-16 |
| PL220496A1 (enrdf_load_stackoverflow) | 1980-09-08 |
| SE438577B (sv) | 1985-04-22 |
| IL58973A0 (en) | 1980-03-31 |
| AU5386879A (en) | 1980-06-26 |
| IE48719B1 (en) | 1985-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69230362T2 (de) | Konstantspannungsdiode, diese enthaltender Leistungswandler und Verfahren zur Herstellung einer Konstantspannungsdiode | |
| DE19701189B4 (de) | Halbleiterbauteil | |
| EP0043009B1 (de) | Steuerbarer Halbleiterschalter | |
| DE102004022455B4 (de) | Bipolartransistor mit isolierter Steuerelektrode | |
| CH668505A5 (de) | Halbleiterbauelement. | |
| DE2727405A1 (de) | Feldgesteuerter thyristor mit eingebettetem gitter | |
| DE69302244T2 (de) | Halbleiter-Schutzkomponente | |
| DE102016120292A1 (de) | Halbleitervorrichtung, die eine Transistorvorrichtung enthält | |
| EP0030274B1 (de) | Thyristor mit steuerbaren Emitter-Kurzschlüssen und Verfahren zu seinem Betrieb | |
| DE112014001296T5 (de) | Leistungshalbleitervorrichtung und entsprechendes Modul | |
| DE19816448C1 (de) | Universal-Halbleiterscheibe für Hochspannungs-Halbleiterbauelemente, ihr Herstellungsverfahren und ihre Verwendung | |
| EP0978145A1 (de) | Halbleiter strombegrenzer und deren verwendung | |
| DE4310606C2 (de) | GTO-Thyristoren | |
| DE1912192A1 (de) | Halbleiterschaltelement mit Gleichrichterdiodenaufbau | |
| DE3787848T2 (de) | Halbleiterdiode. | |
| EP0062099B1 (de) | Thyristor und Verfahren zu seinem Betrieb | |
| EP0249122A1 (de) | Abschaltbares Leistungshalbleiterbauelement | |
| EP0062102B1 (de) | Thyristor mit anschaltbarer innerer Stromverstärkung und Verfahren zu seinem Betrieb | |
| DE3942490C2 (de) | Feldeffekt-gesteuertes Halbleiterbauelement | |
| DE2425364A1 (de) | Gate-gesteuerter halbleitergleichrichter | |
| EP0062100A2 (de) | Thyristor mit innerer Stromverstärkung und Verfahren zu seinem Betrieb | |
| DE2607194A1 (de) | Halbleiteranordnung | |
| EP0389942B1 (de) | Hochsperrendes Halbleiterbauelement | |
| EP0206350A2 (de) | Thyristor mit verminderter Mittelzonendicke | |
| EP1042817A2 (de) | Bipolares hochvolt-leistungsbauelement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |