NL7920185A - Voor hoge spanning bestemde, vastetoestands- junctieschakelaar. - Google Patents
Voor hoge spanning bestemde, vastetoestands- junctieschakelaar. Download PDFInfo
- Publication number
- NL7920185A NL7920185A NL7920185A NL7920185A NL7920185A NL 7920185 A NL7920185 A NL 7920185A NL 7920185 A NL7920185 A NL 7920185A NL 7920185 A NL7920185 A NL 7920185A NL 7920185 A NL7920185 A NL 7920185A
- Authority
- NL
- Netherlands
- Prior art keywords
- region
- regions
- conductivity type
- semiconductor body
- gate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 31
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 4
- 101100336452 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GDS1 gene Proteins 0.000 description 17
- 239000010410 layer Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 9
- 238000011109 contamination Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 230000002146 bilateral effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- LTNZEXKYNRNOGT-UHFFFAOYSA-N dequalinium chloride Chemical compound [Cl-].[Cl-].C1=CC=C2[N+](CCCCCCCCCC[N+]3=C4C=CC=CC4=C(N)C=C3C)=C(C)C=C(N)C2=C1 LTNZEXKYNRNOGT-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G25/00—Watering gardens, fields, sports grounds or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
- H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/676—Combinations of only thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Water Supply & Treatment (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97188678A | 1978-12-20 | 1978-12-20 | |
| US97188678 | 1978-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7920185A true NL7920185A (nl) | 1980-10-31 |
Family
ID=25518914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7920185A NL7920185A (nl) | 1978-12-20 | 1979-12-06 | Voor hoge spanning bestemde, vastetoestands- junctieschakelaar. |
Country Status (22)
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3017313A1 (de) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933432B1 (enrdf_load_stackoverflow) * | 1968-12-20 | 1974-09-06 | ||
| DE2102103A1 (de) * | 1970-01-22 | 1971-07-29 | Rca Corp | Durch Feldeffekt gesteuerte Diode |
| US3722079A (en) * | 1970-06-05 | 1973-03-27 | Radiation Inc | Process for forming buried layers to reduce collector resistance in top contact transistors |
| DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
| JPS5011389A (enrdf_load_stackoverflow) * | 1973-05-30 | 1975-02-05 | ||
| US3911463A (en) * | 1974-01-07 | 1975-10-07 | Gen Electric | Planar unijunction transistor |
| US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
| JPS5168777A (en) * | 1974-12-11 | 1976-06-14 | Fujitsu Ltd | Fuseiteikohandotaisochi |
| JPS5250176A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
| GB1587540A (en) * | 1977-12-20 | 1981-04-08 | Philips Electronic Associated | Gate turn-off diodes and arrangements including such diodes |
-
1979
- 1979-11-28 CA CA340,799A patent/CA1131800A/en not_active Expired
- 1979-12-06 WO PCT/US1979/001044 patent/WO1980001338A1/en unknown
- 1979-12-06 JP JP50020880A patent/JPS55501041A/ja active Pending
- 1979-12-06 GB GB8025969A patent/GB2049282B/en not_active Expired
- 1979-12-06 CH CH6267/80A patent/CH659152A5/de not_active IP Right Cessation
- 1979-12-06 NL NL7920185A patent/NL7920185A/nl not_active Application Discontinuation
- 1979-12-10 HU HU79WE612A patent/HU181028B/hu unknown
- 1979-12-14 DD DD79217695A patent/DD147898A5/de unknown
- 1979-12-14 AU AU53868/79A patent/AU529486B2/en not_active Ceased
- 1979-12-17 IL IL58973A patent/IL58973A/xx unknown
- 1979-12-18 PL PL22049679A patent/PL220496A1/xx unknown
- 1979-12-18 FR FR7930941A patent/FR2445028B1/fr not_active Expired
- 1979-12-18 TR TR21213A patent/TR21213A/xx unknown
- 1979-12-19 IE IE2473/79A patent/IE48719B1/en unknown
- 1979-12-19 ES ES487065A patent/ES487065A1/es not_active Expired
- 1979-12-19 IT IT28205/79A patent/IT1126602B/it active
- 1979-12-19 BE BE0/198640A patent/BE880727A/fr not_active IP Right Cessation
- 1979-12-20 KR KR7904541A patent/KR830000497B1/ko not_active Expired
-
1980
- 1980-08-14 SE SE8005746A patent/SE438577B/sv not_active IP Right Cessation
- 1980-11-28 IN IN1327/CAL/80A patent/IN152898B/en unknown
-
1984
- 1984-05-04 SG SG348/84A patent/SG34884G/en unknown
- 1984-09-06 HK HK692/84A patent/HK69284A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2049282B (en) | 1983-05-18 |
| SE8005746L (sv) | 1980-08-14 |
| WO1980001338A1 (en) | 1980-06-26 |
| HK69284A (en) | 1984-09-14 |
| GB2049282A (en) | 1980-12-17 |
| SG34884G (en) | 1985-11-15 |
| IT7928205A0 (it) | 1979-12-19 |
| IE792473L (en) | 1980-06-20 |
| ES487065A1 (es) | 1980-09-16 |
| KR830000497B1 (ko) | 1983-03-10 |
| DD147898A5 (de) | 1981-04-22 |
| IT1126602B (it) | 1986-05-21 |
| CH659152A5 (de) | 1986-12-31 |
| FR2445028B1 (fr) | 1985-10-11 |
| FR2445028A1 (fr) | 1980-07-18 |
| CA1131800A (en) | 1982-09-14 |
| TR21213A (tr) | 1984-01-02 |
| IL58973A (en) | 1982-07-30 |
| JPS55501041A (enrdf_load_stackoverflow) | 1980-11-27 |
| HU181028B (en) | 1983-05-30 |
| AU529486B2 (en) | 1983-06-09 |
| IN152898B (enrdf_load_stackoverflow) | 1984-04-28 |
| BE880727A (fr) | 1980-04-16 |
| PL220496A1 (enrdf_load_stackoverflow) | 1980-09-08 |
| SE438577B (sv) | 1985-04-22 |
| IL58973A0 (en) | 1980-03-31 |
| AU5386879A (en) | 1980-06-26 |
| IE48719B1 (en) | 1985-05-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BV | The patent application has lapsed |