GB2049282A - High voltage junction solid-state switch - Google Patents

High voltage junction solid-state switch

Info

Publication number
GB2049282A
GB2049282A GB8025969A GB8025969A GB2049282A GB 2049282 A GB2049282 A GB 2049282A GB 8025969 A GB8025969 A GB 8025969A GB 8025969 A GB8025969 A GB 8025969A GB 2049282 A GB2049282 A GB 2049282A
Authority
GB
United Kingdom
Prior art keywords
region
type
semiconductor body
high voltage
state switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB8025969A
Other versions
GB2049282B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB2049282A publication Critical patent/GB2049282A/en
Application granted granted Critical
Publication of GB2049282B publication Critical patent/GB2049282B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G25/00—Watering gardens, fields, sports grounds or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Environmental Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Water Supply & Treatment (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

A high voltage solid-state switch, which allows alternating or direct current operation and provides bidirectional blocking, consists of a first p type semiconductor body (16, 16a) on an n type semiconductor wafer substrate (12). A p+ type anode region (18, 18a) and an n+ type cathode region (24, 24a) exist in portions of the semiconductor body (16, 16a). A second p type region (22, 22a) of higher impurity concentration than the semiconductor body (16, 16a) encircles the cathode region (24, 24a). The anode region (18, 18a) and second p type region (22, 22a) are separated from each other by a portion of the semiconductor body (16, 16a). The semiconductor wafer substrate (12), which acts as a gate, is adapted to allow low resistance contact thereto. Separated low resistance contacts are made to the anode region (18, 18a) and to the cathode region (24, 24a).
GB8025969A 1978-12-20 1979-12-06 High voltage junction solid-state switch Expired GB2049282B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97188678A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
GB2049282A true GB2049282A (en) 1980-12-17
GB2049282B GB2049282B (en) 1983-05-18

Family

ID=25518914

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8025969A Expired GB2049282B (en) 1978-12-20 1979-12-06 High voltage junction solid-state switch

Country Status (22)

Country Link
JP (1) JPS55501041A (en)
KR (1) KR830000497B1 (en)
AU (1) AU529486B2 (en)
BE (1) BE880727A (en)
CA (1) CA1131800A (en)
CH (1) CH659152A5 (en)
DD (1) DD147898A5 (en)
ES (1) ES487065A1 (en)
FR (1) FR2445028B1 (en)
GB (1) GB2049282B (en)
HK (1) HK69284A (en)
HU (1) HU181028B (en)
IE (1) IE48719B1 (en)
IL (1) IL58973A (en)
IN (1) IN152898B (en)
IT (1) IT1126602B (en)
NL (1) NL7920185A (en)
PL (1) PL220496A1 (en)
SE (1) SE438577B (en)
SG (1) SG34884G (en)
TR (1) TR21213A (en)
WO (1) WO1980001338A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (en) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH HIGH BLOCKING VOLTAGE AND METHOD FOR THE PRODUCTION THEREOF

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933432B1 (en) * 1968-12-20 1974-09-06
DE2102103A1 (en) * 1970-01-22 1971-07-29 Rca Corp Field effect controlled diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (en) * 1971-08-26 1973-03-01 Dionics Inc HIGH VOLTAGE P-N TRANSITION AND ITS APPLICATION IN SEMICONDUCTOR SWITCHING ELEMENTS, AND THE PROCESS FOR ITS MANUFACTURING
JPS5011389A (en) * 1973-05-30 1975-02-05
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS5168777A (en) * 1974-12-11 1976-06-14 Fujitsu Ltd FUSEITEIKOHANDOTAISOCHI
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes

Also Published As

Publication number Publication date
HK69284A (en) 1984-09-14
IL58973A (en) 1982-07-30
NL7920185A (en) 1980-10-31
CA1131800A (en) 1982-09-14
HU181028B (en) 1983-05-30
IT7928205A0 (en) 1979-12-19
IN152898B (en) 1984-04-28
IE792473L (en) 1980-06-20
FR2445028B1 (en) 1985-10-11
CH659152A5 (en) 1986-12-31
TR21213A (en) 1984-01-02
AU5386879A (en) 1980-06-26
AU529486B2 (en) 1983-06-09
SE438577B (en) 1985-04-22
ES487065A1 (en) 1980-09-16
SE8005746L (en) 1980-08-14
PL220496A1 (en) 1980-09-08
BE880727A (en) 1980-04-16
IT1126602B (en) 1986-05-21
KR830000497B1 (en) 1983-03-10
SG34884G (en) 1985-11-15
WO1980001338A1 (en) 1980-06-26
DD147898A5 (en) 1981-04-22
IE48719B1 (en) 1985-05-01
IL58973A0 (en) 1980-03-31
JPS55501041A (en) 1980-11-27
GB2049282B (en) 1983-05-18
FR2445028A1 (en) 1980-07-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee