FR2445028A1 - HIGH VOLTAGE SOLID STATE SWITCH - Google Patents

HIGH VOLTAGE SOLID STATE SWITCH

Info

Publication number
FR2445028A1
FR2445028A1 FR7930941A FR7930941A FR2445028A1 FR 2445028 A1 FR2445028 A1 FR 2445028A1 FR 7930941 A FR7930941 A FR 7930941A FR 7930941 A FR7930941 A FR 7930941A FR 2445028 A1 FR2445028 A1 FR 2445028A1
Authority
FR
France
Prior art keywords
solid state
type
high voltage
state switch
voltage solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7930941A
Other languages
French (fr)
Other versions
FR2445028B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2445028A1 publication Critical patent/FR2445028A1/en
Application granted granted Critical
Publication of FR2445028B1 publication Critical patent/FR2445028B1/en
Expired legal-status Critical Current

Links

Classifications

    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G25/00—Watering gardens, fields, sports grounds or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Environmental Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Water Supply & Treatment (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

L'invention concerne les dispositifs de commutation à l'état solide. Un interrupteur capable d'assurer un blocage bidirectionnel en alternatif comme en continu comprend un corps semi-conducteur 16, 16a de type p sur un substrat 12 de type n. Le corps semi-conducteur contient une région d'anode de type p+ 18, 18a et une région de cathode de type n+ 24, 24a. Le substrat 12 fait fonction d'électrode de commande et le potentiel qui lui est appliqué définit la résistance entre l'anode et la cathode. Application à la commutation téléphonique.The invention relates to solid state switching devices. A switch capable of providing both AC and DC bidirectional blocking comprises a p-type semiconductor body 16, 16a on an n-type substrate 12. The semiconductor body contains a p + type anode region 18, 18a and an n + type cathode region 24, 24a. The substrate 12 acts as a control electrode and the potential applied to it defines the resistance between the anode and the cathode. Application to telephone switching.

FR7930941A 1978-12-20 1979-12-18 HIGH VOLTAGE SOLID STATE SWITCH Expired FR2445028B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97188678A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
FR2445028A1 true FR2445028A1 (en) 1980-07-18
FR2445028B1 FR2445028B1 (en) 1985-10-11

Family

ID=25518914

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7930941A Expired FR2445028B1 (en) 1978-12-20 1979-12-18 HIGH VOLTAGE SOLID STATE SWITCH

Country Status (22)

Country Link
JP (1) JPS55501041A (en)
KR (1) KR830000497B1 (en)
AU (1) AU529486B2 (en)
BE (1) BE880727A (en)
CA (1) CA1131800A (en)
CH (1) CH659152A5 (en)
DD (1) DD147898A5 (en)
ES (1) ES487065A1 (en)
FR (1) FR2445028B1 (en)
GB (1) GB2049282B (en)
HK (1) HK69284A (en)
HU (1) HU181028B (en)
IE (1) IE48719B1 (en)
IL (1) IL58973A (en)
IN (1) IN152898B (en)
IT (1) IT1126602B (en)
NL (1) NL7920185A (en)
PL (1) PL220496A1 (en)
SE (1) SE438577B (en)
SG (1) SG34884G (en)
TR (1) TR21213A (en)
WO (1) WO1980001338A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (en) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH HIGH BLOCKING VOLTAGE AND METHOD FOR THE PRODUCTION THEREOF

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2102103A1 (en) * 1970-01-22 1971-07-29 Rca Corp Field effect controlled diode
US4074293A (en) * 1971-08-26 1978-02-14 Dionics, Inc. High voltage pn junction and semiconductive devices employing same
FR2412946A1 (en) * 1977-12-20 1979-07-20 Philips Nv SEMICONDUCTOR DEVICE EQUIPPED WITH A CONTROLLED PIN-DIODE, AND CIRCUIT INCLUDING SUCH A DIODE

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933432B1 (en) * 1968-12-20 1974-09-06
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
JPS5011389A (en) * 1973-05-30 1975-02-05
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS5168777A (en) * 1974-12-11 1976-06-14 Fujitsu Ltd FUSEITEIKOHANDOTAISOCHI
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2102103A1 (en) * 1970-01-22 1971-07-29 Rca Corp Field effect controlled diode
US4074293A (en) * 1971-08-26 1978-02-14 Dionics, Inc. High voltage pn junction and semiconductive devices employing same
FR2412946A1 (en) * 1977-12-20 1979-07-20 Philips Nv SEMICONDUCTOR DEVICE EQUIPPED WITH A CONTROLLED PIN-DIODE, AND CIRCUIT INCLUDING SUCH A DIODE

Also Published As

Publication number Publication date
HK69284A (en) 1984-09-14
IL58973A (en) 1982-07-30
GB2049282A (en) 1980-12-17
NL7920185A (en) 1980-10-31
CA1131800A (en) 1982-09-14
HU181028B (en) 1983-05-30
IT7928205A0 (en) 1979-12-19
IN152898B (en) 1984-04-28
IE792473L (en) 1980-06-20
FR2445028B1 (en) 1985-10-11
CH659152A5 (en) 1986-12-31
TR21213A (en) 1984-01-02
AU5386879A (en) 1980-06-26
AU529486B2 (en) 1983-06-09
SE438577B (en) 1985-04-22
ES487065A1 (en) 1980-09-16
SE8005746L (en) 1980-08-14
PL220496A1 (en) 1980-09-08
BE880727A (en) 1980-04-16
IT1126602B (en) 1986-05-21
KR830000497B1 (en) 1983-03-10
SG34884G (en) 1985-11-15
WO1980001338A1 (en) 1980-06-26
DD147898A5 (en) 1981-04-22
IE48719B1 (en) 1985-05-01
IL58973A0 (en) 1980-03-31
JPS55501041A (en) 1980-11-27
GB2049282B (en) 1983-05-18

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Legal Events

Date Code Title Description
ST Notification of lapse