IT7928205A0 - SOLID STATE SWITCH WITH JUNCTION FOR HIGH VOLTAGES. - Google Patents

SOLID STATE SWITCH WITH JUNCTION FOR HIGH VOLTAGES.

Info

Publication number
IT7928205A0
IT7928205A0 IT7928205A IT2820579A IT7928205A0 IT 7928205 A0 IT7928205 A0 IT 7928205A0 IT 7928205 A IT7928205 A IT 7928205A IT 2820579 A IT2820579 A IT 2820579A IT 7928205 A0 IT7928205 A0 IT 7928205A0
Authority
IT
Italy
Prior art keywords
junction
solid state
high voltages
state switch
voltages
Prior art date
Application number
IT7928205A
Other languages
Italian (it)
Other versions
IT1126602B (en
Inventor
Hartman Adrian Ralph
Murphy Bernard Thomas
Riley Terence James
Shackle Peter William
Original Assignee
New York New York U S A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New York New York U S A filed Critical New York New York U S A
Publication of IT7928205A0 publication Critical patent/IT7928205A0/en
Application granted granted Critical
Publication of IT1126602B publication Critical patent/IT1126602B/en

Links

Classifications

    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01GHORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G25/00Watering gardens, fields, sports grounds or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817Thyristors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391Gated diode structures
    • H01L29/7392Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
IT28205/79A 1978-12-20 1979-12-19 SOLID STATE SWITCH WITH HIGH VOLTAGE JUNCTION IT1126602B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97188678A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
IT7928205A0 true IT7928205A0 (en) 1979-12-19
IT1126602B IT1126602B (en) 1986-05-21

Family

ID=25518914

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28205/79A IT1126602B (en) 1978-12-20 1979-12-19 SOLID STATE SWITCH WITH HIGH VOLTAGE JUNCTION

Country Status (22)

Country Link
JP (1) JPS55501041A (en)
KR (1) KR830000497B1 (en)
AU (1) AU529486B2 (en)
BE (1) BE880727A (en)
CA (1) CA1131800A (en)
CH (1) CH659152A5 (en)
DD (1) DD147898A5 (en)
ES (1) ES487065A1 (en)
FR (1) FR2445028B1 (en)
GB (1) GB2049282B (en)
HK (1) HK69284A (en)
HU (1) HU181028B (en)
IE (1) IE48719B1 (en)
IL (1) IL58973A (en)
IN (1) IN152898B (en)
IT (1) IT1126602B (en)
NL (1) NL7920185A (en)
PL (1) PL220496A1 (en)
SE (1) SE438577B (en)
SG (1) SG34884G (en)
TR (1) TR21213A (en)
WO (1) WO1980001338A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (en) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH HIGH BLOCKING VOLTAGE AND METHOD FOR THE PRODUCTION THEREOF

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933432B1 (en) * 1968-12-20 1974-09-06
DE2102103A1 (en) * 1970-01-22 1971-07-29 Rca Corp Field effect controlled diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (en) * 1971-08-26 1973-03-01 Dionics Inc HIGH VOLTAGE P-N TRANSITION AND ITS APPLICATION IN SEMICONDUCTOR SWITCHING ELEMENTS, AND THE PROCESS FOR ITS MANUFACTURING
JPS5011389A (en) * 1973-05-30 1975-02-05
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS5168777A (en) * 1974-12-11 1976-06-14 Fujitsu Ltd FUSEITEIKOHANDOTAISOCHI
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes

Also Published As

Publication number Publication date
IT1126602B (en) 1986-05-21
JPS55501041A (en) 1980-11-27
SG34884G (en) 1985-11-15
GB2049282A (en) 1980-12-17
IN152898B (en) 1984-04-28
FR2445028A1 (en) 1980-07-18
KR830000497B1 (en) 1983-03-10
IL58973A (en) 1982-07-30
NL7920185A (en) 1980-10-31
HU181028B (en) 1983-05-30
DD147898A5 (en) 1981-04-22
BE880727A (en) 1980-04-16
SE438577B (en) 1985-04-22
TR21213A (en) 1984-01-02
WO1980001338A1 (en) 1980-06-26
CH659152A5 (en) 1986-12-31
HK69284A (en) 1984-09-14
SE8005746L (en) 1980-08-14
ES487065A1 (en) 1980-09-16
GB2049282B (en) 1983-05-18
IE792473L (en) 1980-06-20
AU529486B2 (en) 1983-06-09
IE48719B1 (en) 1985-05-01
PL220496A1 (en) 1980-09-08
IL58973A0 (en) 1980-03-31
FR2445028B1 (en) 1985-10-11
AU5386879A (en) 1980-06-26
CA1131800A (en) 1982-09-14

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