JPS54136167A - Voltage selection switching element - Google Patents
Voltage selection switching elementInfo
- Publication number
- JPS54136167A JPS54136167A JP4354278A JP4354278A JPS54136167A JP S54136167 A JPS54136167 A JP S54136167A JP 4354278 A JP4354278 A JP 4354278A JP 4354278 A JP4354278 A JP 4354278A JP S54136167 A JPS54136167 A JP S54136167A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- type
- switching element
- voltage selection
- selection switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
Landscapes
- Electronic Switches (AREA)
Abstract
PURPOSE:To secure an assured conduction by only the voltage less than the fixed level by connecting the gate of FET to the anode or cathode of the thyristor, and thus to realize a compact formation of the switching element onto the semiconductor substrate with a reduced number of the component parts. CONSTITUTION:Drain D of P-channel FET (N-channel FET in the case of N gate- type thyristor TH) is connected to gate G of P gate-type TH (or N gate-type TH), and gate GF is connected to anode A of P-type TH (cathoe K in the case of N gate-type TH). Thus, an assured conduction is secured only with the voltage less than the fixed level, ensuring a compact formation of the switching element onto the semiconductor substrate with a reduced number of the component parts.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4354278A JPS54136167A (en) | 1978-04-13 | 1978-04-13 | Voltage selection switching element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4354278A JPS54136167A (en) | 1978-04-13 | 1978-04-13 | Voltage selection switching element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54136167A true JPS54136167A (en) | 1979-10-23 |
Family
ID=12666621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4354278A Pending JPS54136167A (en) | 1978-04-13 | 1978-04-13 | Voltage selection switching element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54136167A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7399134B2 (en) | 2003-02-07 | 2008-07-15 | L'oreal | Packaging and applicator device |
-
1978
- 1978-04-13 JP JP4354278A patent/JPS54136167A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7399134B2 (en) | 2003-02-07 | 2008-07-15 | L'oreal | Packaging and applicator device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5493981A (en) | Semiconductor device | |
JPS54132753A (en) | Referential voltage generator and its application | |
JPS553215A (en) | Semiconductor switch circuit | |
JPS54136167A (en) | Voltage selection switching element | |
JPS54148358A (en) | Diode gate circuit | |
JPS57176781A (en) | Superconductive device | |
JPS6441319A (en) | Semiconductor relay | |
JPS54136168A (en) | Voltage selection switching element | |
JPS57103355A (en) | Mos semiconductor device | |
IE792474L (en) | Switching device | |
JPS54140482A (en) | Semiconductor device | |
JPS5323555A (en) | Complemen tary mos integrated circuit | |
JPS54136169A (en) | Voltage selection switching element | |
JPS553602A (en) | Negative resistance device | |
JPS54122083A (en) | Voltage selective-switching circuit of high sensitivity and high dielectric strength | |
JPS5217761A (en) | Semiconductor universal - direction switch | |
JPS5582467A (en) | Mis type integrated circuit with schottky clamp diode | |
ES487065A1 (en) | High voltage junction solid-state switch | |
JPS57197869A (en) | Semiconductor device | |
JPS5793573A (en) | Mis semiconductor device | |
JPS56100473A (en) | Semiconductor device | |
JPS54132179A (en) | Complementary insulating gate field effect semiconductor device | |
JPS53105388A (en) | Integrated injection logic circuit | |
JPS57190423A (en) | Semiconductor circuit | |
JPS546444A (en) | Static latch circuit |