BE880727A - Interrupteur a l'etat solide a haute tension - Google Patents

Interrupteur a l'etat solide a haute tension

Info

Publication number
BE880727A
BE880727A BE0/198640A BE198640A BE880727A BE 880727 A BE880727 A BE 880727A BE 0/198640 A BE0/198640 A BE 0/198640A BE 198640 A BE198640 A BE 198640A BE 880727 A BE880727 A BE 880727A
Authority
BE
Belgium
Prior art keywords
high voltage
solid state
state switch
voltage solid
switch
Prior art date
Application number
BE0/198640A
Other languages
English (en)
Inventor
A Hartman
P Shackle
B Murphy
T Riley
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE880727A publication Critical patent/BE880727A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G25/00—Watering gardens, fields, sports grounds or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Environmental Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Water Supply & Treatment (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
BE0/198640A 1978-12-20 1979-12-19 Interrupteur a l'etat solide a haute tension BE880727A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97188678A 1978-12-20 1978-12-20

Publications (1)

Publication Number Publication Date
BE880727A true BE880727A (fr) 1980-04-16

Family

ID=25518914

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/198640A BE880727A (fr) 1978-12-20 1979-12-19 Interrupteur a l'etat solide a haute tension

Country Status (22)

Country Link
JP (1) JPS55501041A (fr)
KR (1) KR830000497B1 (fr)
AU (1) AU529486B2 (fr)
BE (1) BE880727A (fr)
CA (1) CA1131800A (fr)
CH (1) CH659152A5 (fr)
DD (1) DD147898A5 (fr)
ES (1) ES487065A1 (fr)
FR (1) FR2445028B1 (fr)
GB (1) GB2049282B (fr)
HK (1) HK69284A (fr)
HU (1) HU181028B (fr)
IE (1) IE48719B1 (fr)
IL (1) IL58973A (fr)
IN (1) IN152898B (fr)
IT (1) IT1126602B (fr)
NL (1) NL7920185A (fr)
PL (1) PL220496A1 (fr)
SE (1) SE438577B (fr)
SG (1) SG34884G (fr)
TR (1) TR21213A (fr)
WO (1) WO1980001338A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933432B1 (fr) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5011389A (fr) * 1973-05-30 1975-02-05
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS5168777A (ja) * 1974-12-11 1976-06-14 Fujitsu Ltd Fuseiteikohandotaisochi
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes

Also Published As

Publication number Publication date
HK69284A (en) 1984-09-14
IL58973A (en) 1982-07-30
GB2049282A (en) 1980-12-17
NL7920185A (nl) 1980-10-31
CA1131800A (fr) 1982-09-14
HU181028B (en) 1983-05-30
IT7928205A0 (it) 1979-12-19
IN152898B (fr) 1984-04-28
IE792473L (en) 1980-06-20
FR2445028B1 (fr) 1985-10-11
CH659152A5 (de) 1986-12-31
TR21213A (tr) 1984-01-02
AU5386879A (en) 1980-06-26
AU529486B2 (en) 1983-06-09
SE438577B (sv) 1985-04-22
ES487065A1 (es) 1980-09-16
SE8005746L (sv) 1980-08-14
PL220496A1 (fr) 1980-09-08
IT1126602B (it) 1986-05-21
KR830000497B1 (ko) 1983-03-10
SG34884G (en) 1985-11-15
WO1980001338A1 (fr) 1980-06-26
DD147898A5 (de) 1981-04-22
IE48719B1 (en) 1985-05-01
IL58973A0 (en) 1980-03-31
JPS55501041A (fr) 1980-11-27
GB2049282B (en) 1983-05-18
FR2445028A1 (fr) 1980-07-18

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTERN ELECTRIC CY INC.

Effective date: 19881231