CA1131800A - Commutateur haute tension a semiconducteur a jonction - Google Patents
Commutateur haute tension a semiconducteur a jonctionInfo
- Publication number
- CA1131800A CA1131800A CA340,799A CA340799A CA1131800A CA 1131800 A CA1131800 A CA 1131800A CA 340799 A CA340799 A CA 340799A CA 1131800 A CA1131800 A CA 1131800A
- Authority
- CA
- Canada
- Prior art keywords
- region
- regions
- conductivity type
- semiconductor body
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000009977 dual effect Effects 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 abstract description 15
- 230000000903 blocking effect Effects 0.000 abstract description 8
- 230000002457 bidirectional effect Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 12
- 208000025165 Autoerythrocyte sensitization syndrome Diseases 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000002146 bilateral effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 208000003251 Pruritus Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009709 capacitor discharge sintering Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G25/00—Watering gardens, fields, sports grounds or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Environmental Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Water Supply & Treatment (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97188678A | 1978-12-20 | 1978-12-20 | |
| US971,886 | 1978-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1131800A true CA1131800A (fr) | 1982-09-14 |
Family
ID=25518914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA340,799A Expired CA1131800A (fr) | 1978-12-20 | 1979-11-28 | Commutateur haute tension a semiconducteur a jonction |
Country Status (22)
| Country | Link |
|---|---|
| JP (1) | JPS55501041A (fr) |
| KR (1) | KR830000497B1 (fr) |
| AU (1) | AU529486B2 (fr) |
| BE (1) | BE880727A (fr) |
| CA (1) | CA1131800A (fr) |
| CH (1) | CH659152A5 (fr) |
| DD (1) | DD147898A5 (fr) |
| ES (1) | ES487065A1 (fr) |
| FR (1) | FR2445028B1 (fr) |
| GB (1) | GB2049282B (fr) |
| HK (1) | HK69284A (fr) |
| HU (1) | HU181028B (fr) |
| IE (1) | IE48719B1 (fr) |
| IL (1) | IL58973A (fr) |
| IN (1) | IN152898B (fr) |
| IT (1) | IT1126602B (fr) |
| NL (1) | NL7920185A (fr) |
| PL (1) | PL220496A1 (fr) |
| SE (1) | SE438577B (fr) |
| SG (1) | SG34884G (fr) |
| TR (1) | TR21213A (fr) |
| WO (1) | WO1980001338A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3017313A1 (de) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933432B1 (fr) * | 1968-12-20 | 1974-09-06 | ||
| DE2102103A1 (de) * | 1970-01-22 | 1971-07-29 | Rca Corp | Durch Feldeffekt gesteuerte Diode |
| US3722079A (en) * | 1970-06-05 | 1973-03-27 | Radiation Inc | Process for forming buried layers to reduce collector resistance in top contact transistors |
| DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
| JPS5011389A (fr) * | 1973-05-30 | 1975-02-05 | ||
| US3911463A (en) * | 1974-01-07 | 1975-10-07 | Gen Electric | Planar unijunction transistor |
| US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
| JPS5168777A (ja) * | 1974-12-11 | 1976-06-14 | Fujitsu Ltd | Fuseiteikohandotaisochi |
| JPS5250176A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
| GB1587540A (en) * | 1977-12-20 | 1981-04-08 | Philips Electronic Associated | Gate turn-off diodes and arrangements including such diodes |
-
1979
- 1979-11-28 CA CA340,799A patent/CA1131800A/fr not_active Expired
- 1979-12-06 JP JP50020880A patent/JPS55501041A/ja active Pending
- 1979-12-06 NL NL7920185A patent/NL7920185A/nl not_active Application Discontinuation
- 1979-12-06 CH CH6267/80A patent/CH659152A5/de not_active IP Right Cessation
- 1979-12-06 WO PCT/US1979/001044 patent/WO1980001338A1/fr unknown
- 1979-12-06 GB GB8025969A patent/GB2049282B/en not_active Expired
- 1979-12-10 HU HU79WE612A patent/HU181028B/hu unknown
- 1979-12-14 AU AU53868/79A patent/AU529486B2/en not_active Ceased
- 1979-12-14 DD DD79217695A patent/DD147898A5/de unknown
- 1979-12-17 IL IL58973A patent/IL58973A/xx unknown
- 1979-12-18 PL PL22049679A patent/PL220496A1/xx unknown
- 1979-12-18 FR FR7930941A patent/FR2445028B1/fr not_active Expired
- 1979-12-18 TR TR21213A patent/TR21213A/xx unknown
- 1979-12-19 ES ES487065A patent/ES487065A1/es not_active Expired
- 1979-12-19 BE BE0/198640A patent/BE880727A/fr not_active IP Right Cessation
- 1979-12-19 IT IT28205/79A patent/IT1126602B/it active
- 1979-12-19 IE IE2473/79A patent/IE48719B1/en unknown
- 1979-12-20 KR KR7904541A patent/KR830000497B1/ko active
-
1980
- 1980-08-14 SE SE8005746A patent/SE438577B/sv not_active IP Right Cessation
- 1980-11-28 IN IN1327/CAL/80A patent/IN152898B/en unknown
-
1984
- 1984-05-04 SG SG348/84A patent/SG34884G/en unknown
- 1984-09-06 HK HK692/84A patent/HK69284A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| HK69284A (en) | 1984-09-14 |
| IL58973A (en) | 1982-07-30 |
| GB2049282A (en) | 1980-12-17 |
| NL7920185A (nl) | 1980-10-31 |
| HU181028B (en) | 1983-05-30 |
| IT7928205A0 (it) | 1979-12-19 |
| IN152898B (fr) | 1984-04-28 |
| IE792473L (en) | 1980-06-20 |
| FR2445028B1 (fr) | 1985-10-11 |
| CH659152A5 (de) | 1986-12-31 |
| TR21213A (tr) | 1984-01-02 |
| AU5386879A (en) | 1980-06-26 |
| AU529486B2 (en) | 1983-06-09 |
| SE438577B (sv) | 1985-04-22 |
| ES487065A1 (es) | 1980-09-16 |
| SE8005746L (sv) | 1980-08-14 |
| PL220496A1 (fr) | 1980-09-08 |
| BE880727A (fr) | 1980-04-16 |
| IT1126602B (it) | 1986-05-21 |
| KR830000497B1 (ko) | 1983-03-10 |
| SG34884G (en) | 1985-11-15 |
| WO1980001338A1 (fr) | 1980-06-26 |
| DD147898A5 (de) | 1981-04-22 |
| IE48719B1 (en) | 1985-05-01 |
| IL58973A0 (en) | 1980-03-31 |
| JPS55501041A (fr) | 1980-11-27 |
| GB2049282B (en) | 1983-05-18 |
| FR2445028A1 (fr) | 1980-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3476993A (en) | Five layer and junction bridging terminal switching device | |
| US4799095A (en) | Metal oxide semiconductor gated turn off thyristor | |
| US4454527A (en) | Thyristor having controllable emitter short circuits and a method for its operation | |
| US4942445A (en) | Lateral depletion mode tyristor | |
| US4132996A (en) | Electric field-controlled semiconductor device | |
| US4608590A (en) | High voltage dielectrically isolated solid-state switch | |
| US5936267A (en) | Insulated gate thyristor | |
| EP0177665B1 (fr) | Dispositif de commutation blocable à semi-conducteur | |
| US4500902A (en) | FET Controlled thyristor | |
| US4630092A (en) | Insulated gate-controlled thyristor | |
| JP2687163B2 (ja) | ターンオフ可能なサイリスタ | |
| EP0065346A2 (fr) | Dispositif de commutation à semi-conducteur | |
| US4587545A (en) | High voltage dielectrically isolated remote gate solid-state switch | |
| US4502072A (en) | FET Controlled thyristor | |
| US4587656A (en) | High voltage solid-state switch | |
| US4309715A (en) | Integral turn-on high voltage switch | |
| US4062032A (en) | Gate turn off semiconductor rectifiers | |
| CA1131800A (fr) | Commutateur haute tension a semiconducteur a jonction | |
| US4502071A (en) | FET Controlled thyristor | |
| US4602268A (en) | High voltage dielectrically isolated dual gate solid-state switch | |
| CA1191969A (fr) | Relais semiconducteur | |
| US4586073A (en) | High voltage junction solid-state switch | |
| US4214255A (en) | Gate turn-off triac with dual low conductivity regions contacting central gate region | |
| KR830002293B1 (ko) | 고압용 게이트 다이오드 스위치 | |
| US4825270A (en) | Gate turn-off thyristor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |