IN152898B - - Google Patents

Info

Publication number
IN152898B
IN152898B IN1327/CAL/80A IN1327CA1980A IN152898B IN 152898 B IN152898 B IN 152898B IN 1327CA1980 A IN1327CA1980 A IN 1327CA1980A IN 152898 B IN152898 B IN 152898B
Authority
IN
India
Application number
IN1327/CAL/80A
Other languages
English (en)
Inventor
Adrian Ralph Hartman
Bernard Thomas Murphy
Terence James Riley
Peter William Shackle
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IN152898B publication Critical patent/IN152898B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01GHORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G25/00Watering gardens, fields, sports grounds or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211Gated diodes
    • H10D12/212Gated diodes having PN junction gates, e.g. field controlled diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676Combinations of only thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Water Supply & Treatment (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
IN1327/CAL/80A 1978-12-20 1980-11-28 IN152898B (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97188678A 1978-12-20 1978-12-20

Publications (1)

Publication Number Publication Date
IN152898B true IN152898B (enrdf_load_stackoverflow) 1984-04-28

Family

ID=25518914

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1327/CAL/80A IN152898B (enrdf_load_stackoverflow) 1978-12-20 1980-11-28

Country Status (22)

Country Link
JP (1) JPS55501041A (enrdf_load_stackoverflow)
KR (1) KR830000497B1 (enrdf_load_stackoverflow)
AU (1) AU529486B2 (enrdf_load_stackoverflow)
BE (1) BE880727A (enrdf_load_stackoverflow)
CA (1) CA1131800A (enrdf_load_stackoverflow)
CH (1) CH659152A5 (enrdf_load_stackoverflow)
DD (1) DD147898A5 (enrdf_load_stackoverflow)
ES (1) ES487065A1 (enrdf_load_stackoverflow)
FR (1) FR2445028B1 (enrdf_load_stackoverflow)
GB (1) GB2049282B (enrdf_load_stackoverflow)
HK (1) HK69284A (enrdf_load_stackoverflow)
HU (1) HU181028B (enrdf_load_stackoverflow)
IE (1) IE48719B1 (enrdf_load_stackoverflow)
IL (1) IL58973A (enrdf_load_stackoverflow)
IN (1) IN152898B (enrdf_load_stackoverflow)
IT (1) IT1126602B (enrdf_load_stackoverflow)
NL (1) NL7920185A (enrdf_load_stackoverflow)
PL (1) PL220496A1 (enrdf_load_stackoverflow)
SE (1) SE438577B (enrdf_load_stackoverflow)
SG (1) SG34884G (enrdf_load_stackoverflow)
TR (1) TR21213A (enrdf_load_stackoverflow)
WO (1) WO1980001338A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933432B1 (enrdf_load_stackoverflow) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5011389A (enrdf_load_stackoverflow) * 1973-05-30 1975-02-05
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS5168777A (en) * 1974-12-11 1976-06-14 Fujitsu Ltd Fuseiteikohandotaisochi
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes

Also Published As

Publication number Publication date
GB2049282B (en) 1983-05-18
SE8005746L (sv) 1980-08-14
WO1980001338A1 (en) 1980-06-26
HK69284A (en) 1984-09-14
GB2049282A (en) 1980-12-17
SG34884G (en) 1985-11-15
IT7928205A0 (it) 1979-12-19
IE792473L (en) 1980-06-20
ES487065A1 (es) 1980-09-16
KR830000497B1 (ko) 1983-03-10
DD147898A5 (de) 1981-04-22
IT1126602B (it) 1986-05-21
CH659152A5 (de) 1986-12-31
NL7920185A (nl) 1980-10-31
FR2445028B1 (fr) 1985-10-11
FR2445028A1 (fr) 1980-07-18
CA1131800A (en) 1982-09-14
TR21213A (tr) 1984-01-02
IL58973A (en) 1982-07-30
JPS55501041A (enrdf_load_stackoverflow) 1980-11-27
HU181028B (en) 1983-05-30
AU529486B2 (en) 1983-06-09
BE880727A (fr) 1980-04-16
PL220496A1 (enrdf_load_stackoverflow) 1980-09-08
SE438577B (sv) 1985-04-22
IL58973A0 (en) 1980-03-31
AU5386879A (en) 1980-06-26
IE48719B1 (en) 1985-05-01

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