KR20260009393A - 기판 프로세싱 페데스탈들을 위한 내부 핀들을 갖는 냉각제 채널 - Google Patents

기판 프로세싱 페데스탈들을 위한 내부 핀들을 갖는 냉각제 채널

Info

Publication number
KR20260009393A
KR20260009393A KR1020257043387A KR20257043387A KR20260009393A KR 20260009393 A KR20260009393 A KR 20260009393A KR 1020257043387 A KR1020257043387 A KR 1020257043387A KR 20257043387 A KR20257043387 A KR 20257043387A KR 20260009393 A KR20260009393 A KR 20260009393A
Authority
KR
South Korea
Prior art keywords
coolant channel
base plate
paragraph
pins
fins
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257043387A
Other languages
English (en)
Korean (ko)
Inventor
펑 왕
알렉산더 마티슈킨
다렐 에를리히
에릭 새뮬런
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20260009393A publication Critical patent/KR20260009393A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
KR1020257043387A 2020-02-20 2021-02-18 기판 프로세싱 페데스탈들을 위한 내부 핀들을 갖는 냉각제 채널 Pending KR20260009393A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202062978899P 2020-02-20 2020-02-20
US62/978,899 2020-02-20
KR1020227032490A KR102906600B1 (ko) 2020-02-20 2021-02-18 기판 프로세싱 페데스탈들을 위한 내부 핀들 (fins) 을 갖는 냉각제 채널
PCT/US2021/018445 WO2021168027A1 (en) 2020-02-20 2021-02-18 Coolant channel with internal fins for substrate processing pedestals

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020227032490A Division KR102906600B1 (ko) 2020-02-20 2021-02-18 기판 프로세싱 페데스탈들을 위한 내부 핀들 (fins) 을 갖는 냉각제 채널

Publications (1)

Publication Number Publication Date
KR20260009393A true KR20260009393A (ko) 2026-01-19

Family

ID=77391637

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020257043387A Pending KR20260009393A (ko) 2020-02-20 2021-02-18 기판 프로세싱 페데스탈들을 위한 내부 핀들을 갖는 냉각제 채널
KR1020227032490A Active KR102906600B1 (ko) 2020-02-20 2021-02-18 기판 프로세싱 페데스탈들을 위한 내부 핀들 (fins) 을 갖는 냉각제 채널

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020227032490A Active KR102906600B1 (ko) 2020-02-20 2021-02-18 기판 프로세싱 페데스탈들을 위한 내부 핀들 (fins) 을 갖는 냉각제 채널

Country Status (5)

Country Link
US (2) US12381105B2 (https=)
JP (2) JP2023514839A (https=)
KR (2) KR20260009393A (https=)
CN (1) CN115136279A (https=)
WO (1) WO2021168027A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7765621B2 (ja) * 2023-09-12 2025-11-06 日本碍子株式会社 ウエハ載置台
JP2026000821A (ja) * 2024-06-18 2026-01-06 Toto株式会社 静電チャック
TW202601881A (zh) * 2024-06-18 2026-01-01 日商Ｔｏｔｏ股份有限公司 靜電吸盤
JP2026015960A (ja) * 2024-07-22 2026-02-03 東京エレクトロン株式会社 ステージ、および基板処理装置
KR102892423B1 (ko) * 2025-04-28 2025-11-27 성균관대학교 산학협력단 냉각 유체 및 기포 배출 촉진 구조를 구비한 히트 싱크

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3921234B2 (ja) 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
US7221553B2 (en) 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US7593229B2 (en) * 2006-03-31 2009-09-22 Hong Kong Applied Science & Technology Research Institute Co. Ltd Heat exchange enhancement
JP4564973B2 (ja) * 2007-01-26 2010-10-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7649729B2 (en) * 2007-10-12 2010-01-19 Applied Materials, Inc. Electrostatic chuck assembly
JP2011040528A (ja) * 2009-08-10 2011-02-24 Hitachi High-Technologies Corp プラズマ処理装置
JP2011165939A (ja) * 2010-02-10 2011-08-25 Denso Corp 積層型冷却器
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
JP6173936B2 (ja) 2013-02-28 2017-08-02 東京エレクトロン株式会社 載置台及びプラズマ処理装置
WO2015027004A1 (en) * 2013-08-21 2015-02-26 CoolChip Technologies, Inc. Kinetic heat-sink with interdigitated heat-transfer fins
KR101574740B1 (ko) 2013-08-28 2015-12-04 (주)젠 기상식각 및 세정을 위한 플라즈마 장치
US9741593B2 (en) * 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
JP6183567B1 (ja) * 2016-05-13 2017-08-23 Toto株式会社 静電チャック
JP6918642B2 (ja) * 2017-08-25 2021-08-11 東京エレクトロン株式会社 冷媒用の流路を有する部材、冷媒用の流路を有する部材の制御方法及び基板処理装置
JP6392961B2 (ja) * 2017-09-13 2018-09-19 日本特殊陶業株式会社 静電チャック
JP6993835B2 (ja) * 2017-10-12 2022-01-14 日本特殊陶業株式会社 保持装置および保持装置の製造方法
US10900124B2 (en) 2018-06-12 2021-01-26 Lam Research Corporation Substrate processing chamber with showerhead having cooled faceplate
CN111211059B (zh) * 2018-11-22 2023-07-04 矽品精密工业股份有限公司 电子封装件及其制法与散热件

Also Published As

Publication number Publication date
US20250364298A1 (en) 2025-11-27
US12381105B2 (en) 2025-08-05
KR102906600B1 (ko) 2025-12-30
KR20220141878A (ko) 2022-10-20
WO2021168027A1 (en) 2021-08-26
CN115136279A (zh) 2022-09-30
JP2026053556A (ja) 2026-03-25
JP2023514839A (ja) 2023-04-11
US20230087913A1 (en) 2023-03-23

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