CN115136279A - 用于衬底处理基座的带内翅片的冷却剂通道 - Google Patents

用于衬底处理基座的带内翅片的冷却剂通道 Download PDF

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Publication number
CN115136279A
CN115136279A CN202180015645.0A CN202180015645A CN115136279A CN 115136279 A CN115136279 A CN 115136279A CN 202180015645 A CN202180015645 A CN 202180015645A CN 115136279 A CN115136279 A CN 115136279A
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CN
China
Prior art keywords
fin
substrate
coolant channel
coolant
volume
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180015645.0A
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English (en)
Chinese (zh)
Inventor
王峰
亚历山大·马丘什金
达雷尔·埃利希
埃里克·萨穆隆
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Lam Research Corp
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Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN115136279A publication Critical patent/CN115136279A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722Details of electrostatic chucks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3321CVD [Chemical Vapor Deposition]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335Cleaning

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CN202180015645.0A 2020-02-20 2021-02-18 用于衬底处理基座的带内翅片的冷却剂通道 Pending CN115136279A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062978899P 2020-02-20 2020-02-20
US62/978,899 2020-02-20
PCT/US2021/018445 WO2021168027A1 (en) 2020-02-20 2021-02-18 Coolant channel with internal fins for substrate processing pedestals

Publications (1)

Publication Number Publication Date
CN115136279A true CN115136279A (zh) 2022-09-30

Family

ID=77391637

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180015645.0A Pending CN115136279A (zh) 2020-02-20 2021-02-18 用于衬底处理基座的带内翅片的冷却剂通道

Country Status (5)

Country Link
US (2) US12381105B2 (https=)
JP (2) JP2023514839A (https=)
KR (2) KR20260009393A (https=)
CN (1) CN115136279A (https=)
WO (1) WO2021168027A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7765621B2 (ja) * 2023-09-12 2025-11-06 日本碍子株式会社 ウエハ載置台
JP2026000821A (ja) * 2024-06-18 2026-01-06 Toto株式会社 静電チャック
TW202601881A (zh) * 2024-06-18 2026-01-01 日商Toto股份有限公司 靜電吸盤
JP2026015960A (ja) * 2024-07-22 2026-02-03 東京エレクトロン株式会社 ステージ、および基板処理装置
KR102892423B1 (ko) * 2025-04-28 2025-11-27 성균관대학교 산학협력단 냉각 유체 및 기포 배출 촉진 구조를 구비한 히트 싱크

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3921234B2 (ja) 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
US7221553B2 (en) 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US7593229B2 (en) * 2006-03-31 2009-09-22 Hong Kong Applied Science & Technology Research Institute Co. Ltd Heat exchange enhancement
JP4564973B2 (ja) * 2007-01-26 2010-10-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7649729B2 (en) * 2007-10-12 2010-01-19 Applied Materials, Inc. Electrostatic chuck assembly
JP2011040528A (ja) * 2009-08-10 2011-02-24 Hitachi High-Technologies Corp プラズマ処理装置
JP2011165939A (ja) * 2010-02-10 2011-08-25 Denso Corp 積層型冷却器
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
JP6173936B2 (ja) 2013-02-28 2017-08-02 東京エレクトロン株式会社 載置台及びプラズマ処理装置
WO2015027004A1 (en) * 2013-08-21 2015-02-26 CoolChip Technologies, Inc. Kinetic heat-sink with interdigitated heat-transfer fins
KR101574740B1 (ko) 2013-08-28 2015-12-04 (주)젠 기상식각 및 세정을 위한 플라즈마 장치
US9741593B2 (en) * 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
JP6183567B1 (ja) * 2016-05-13 2017-08-23 Toto株式会社 静電チャック
JP6918642B2 (ja) * 2017-08-25 2021-08-11 東京エレクトロン株式会社 冷媒用の流路を有する部材、冷媒用の流路を有する部材の制御方法及び基板処理装置
JP6392961B2 (ja) * 2017-09-13 2018-09-19 日本特殊陶業株式会社 静電チャック
JP6993835B2 (ja) * 2017-10-12 2022-01-14 日本特殊陶業株式会社 保持装置および保持装置の製造方法
US10900124B2 (en) 2018-06-12 2021-01-26 Lam Research Corporation Substrate processing chamber with showerhead having cooled faceplate
CN111211059B (zh) * 2018-11-22 2023-07-04 矽品精密工业股份有限公司 电子封装件及其制法与散热件

Also Published As

Publication number Publication date
US20250364298A1 (en) 2025-11-27
US12381105B2 (en) 2025-08-05
KR102906600B1 (ko) 2025-12-30
KR20260009393A (ko) 2026-01-19
KR20220141878A (ko) 2022-10-20
WO2021168027A1 (en) 2021-08-26
JP2026053556A (ja) 2026-03-25
JP2023514839A (ja) 2023-04-11
US20230087913A1 (en) 2023-03-23

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