KR20250163920A - 반도체 장치 - Google Patents

반도체 장치

Info

Publication number
KR20250163920A
KR20250163920A KR1020257033697A KR20257033697A KR20250163920A KR 20250163920 A KR20250163920 A KR 20250163920A KR 1020257033697 A KR1020257033697 A KR 1020257033697A KR 20257033697 A KR20257033697 A KR 20257033697A KR 20250163920 A KR20250163920 A KR 20250163920A
Authority
KR
South Korea
Prior art keywords
substrate
layer
semiconductor
semiconductor layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257033697A
Other languages
English (en)
Korean (ko)
Inventor
다카시 요코야마
요스케 니타
간 시미즈
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Publication of KR20250163920A publication Critical patent/KR20250163920A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
KR1020257033697A 2023-03-17 2024-03-15 반도체 장치 Pending KR20250163920A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2023-042942 2023-03-17
JP2023042942 2023-03-17
PCT/JP2024/010258 WO2024195725A1 (ja) 2023-03-17 2024-03-15 半導体装置

Publications (1)

Publication Number Publication Date
KR20250163920A true KR20250163920A (ko) 2025-11-21

Family

ID=92841693

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257033697A Pending KR20250163920A (ko) 2023-03-17 2024-03-15 반도체 장치

Country Status (6)

Country Link
EP (1) EP4682958A1 (https=)
JP (1) JPWO2024195725A1 (https=)
KR (1) KR20250163920A (https=)
CN (1) CN120660462A (https=)
TW (1) TW202504081A (https=)
WO (1) WO2024195725A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019087764A1 (ja) 2017-10-30 2019-05-09 ソニーセミコンダクタソリューションズ株式会社 裏面照射型の固体撮像装置、および裏面照射型の固体撮像装置の製造方法、撮像装置、並びに電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001036054A (ja) * 1999-07-19 2001-02-09 Mitsubishi Electric Corp Ｓｏｉ基板の製造方法
JPWO2017038403A1 (ja) * 2015-09-01 2018-08-16 ソニー株式会社 積層体
JP2022077181A (ja) * 2020-11-11 2022-05-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP2022089275A (ja) * 2020-12-04 2022-06-16 ソニーセミコンダクタソリューションズ株式会社 撮像装置、電子機器、製造方法
JP7556505B2 (ja) * 2020-12-25 2024-09-26 国立大学法人東京工業大学 半導体装置及びその製造方法
CN117652029A (zh) * 2021-07-27 2024-03-05 索尼半导体解决方案公司 固体摄像元件、摄像装置和电子设备
JP7798514B2 (ja) 2021-09-15 2026-01-14 高砂熱学工業株式会社 データセンターの空調システム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019087764A1 (ja) 2017-10-30 2019-05-09 ソニーセミコンダクタソリューションズ株式会社 裏面照射型の固体撮像装置、および裏面照射型の固体撮像装置の製造方法、撮像装置、並びに電子機器

Also Published As

Publication number Publication date
CN120660462A (zh) 2025-09-16
WO2024195725A1 (ja) 2024-09-26
EP4682958A1 (en) 2026-01-21
JPWO2024195725A1 (https=) 2024-09-26
TW202504081A (zh) 2025-01-16

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Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)