CN120660462A - 半导体装置 - Google Patents

半导体装置

Info

Publication number
CN120660462A
CN120660462A CN202480011036.1A CN202480011036A CN120660462A CN 120660462 A CN120660462 A CN 120660462A CN 202480011036 A CN202480011036 A CN 202480011036A CN 120660462 A CN120660462 A CN 120660462A
Authority
CN
China
Prior art keywords
substrate
semiconductor
layer
semiconductor layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480011036.1A
Other languages
English (en)
Chinese (zh)
Inventor
横山孝司
新田阳介
清水完
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN120660462A publication Critical patent/CN120660462A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
CN202480011036.1A 2023-03-17 2024-03-15 半导体装置 Pending CN120660462A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-042942 2023-03-17
JP2023042942 2023-03-17
PCT/JP2024/010258 WO2024195725A1 (ja) 2023-03-17 2024-03-15 半導体装置

Publications (1)

Publication Number Publication Date
CN120660462A true CN120660462A (zh) 2025-09-16

Family

ID=92841693

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480011036.1A Pending CN120660462A (zh) 2023-03-17 2024-03-15 半导体装置

Country Status (6)

Country Link
EP (1) EP4682958A1 (https=)
JP (1) JPWO2024195725A1 (https=)
KR (1) KR20250163920A (https=)
CN (1) CN120660462A (https=)
TW (1) TW202504081A (https=)
WO (1) WO2024195725A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001036054A (ja) * 1999-07-19 2001-02-09 Mitsubishi Electric Corp Ｓｏｉ基板の製造方法
JPWO2017038403A1 (ja) * 2015-09-01 2018-08-16 ソニー株式会社 積層体
TWI905469B (zh) 2017-10-30 2025-11-21 日商索尼半導體解決方案公司 固體攝像裝置及電子機器
JP2022077181A (ja) * 2020-11-11 2022-05-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP2022089275A (ja) * 2020-12-04 2022-06-16 ソニーセミコンダクタソリューションズ株式会社 撮像装置、電子機器、製造方法
JP7556505B2 (ja) * 2020-12-25 2024-09-26 国立大学法人東京工業大学 半導体装置及びその製造方法
CN117652029A (zh) * 2021-07-27 2024-03-05 索尼半导体解决方案公司 固体摄像元件、摄像装置和电子设备
JP7798514B2 (ja) 2021-09-15 2026-01-14 高砂熱学工業株式会社 データセンターの空調システム

Also Published As

Publication number Publication date
WO2024195725A1 (ja) 2024-09-26
EP4682958A1 (en) 2026-01-21
JPWO2024195725A1 (https=) 2024-09-26
KR20250163920A (ko) 2025-11-21
TW202504081A (zh) 2025-01-16

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