KR20240043798A - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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Publication number
KR20240043798A
KR20240043798A KR1020247008120A KR20247008120A KR20240043798A KR 20240043798 A KR20240043798 A KR 20240043798A KR 1020247008120 A KR1020247008120 A KR 1020247008120A KR 20247008120 A KR20247008120 A KR 20247008120A KR 20240043798 A KR20240043798 A KR 20240043798A
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KR
South Korea
Prior art keywords
substrate
nozzle
etching
region
area
Prior art date
Application number
KR1020247008120A
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English (en)
Korean (ko)
Inventor
히로아키 다카하시
야스토시 오쿠노
야스히코 오하시
Original Assignee
가부시키가이샤 스크린 홀딩스
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Publication date
Application filed by 가부시키가이샤 스크린 홀딩스 filed Critical 가부시키가이샤 스크린 홀딩스
Publication of KR20240043798A publication Critical patent/KR20240043798A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
KR1020247008120A 2021-09-27 2022-09-15 기판 처리 장치 및 기판 처리 방법 KR20240043798A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-156618 2021-09-27
JP2021156618A JP2023047615A (ja) 2021-09-27 2021-09-27 基板処理装置及び基板処理方法
PCT/JP2022/034560 WO2023048064A1 (ja) 2021-09-27 2022-09-15 基板処理装置及び基板処理方法

Publications (1)

Publication Number Publication Date
KR20240043798A true KR20240043798A (ko) 2024-04-03

Family

ID=85720691

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247008120A KR20240043798A (ko) 2021-09-27 2022-09-15 기판 처리 장치 및 기판 처리 방법

Country Status (4)

Country Link
JP (1) JP2023047615A (zh)
KR (1) KR20240043798A (zh)
TW (1) TWI833360B (zh)
WO (1) WO2023048064A1 (zh)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08279485A (ja) 1995-04-06 1996-10-22 Nisso Eng Kk 枚葉式スピンエッチング方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3177728B2 (ja) * 1993-08-23 2001-06-18 東京エレクトロン株式会社 処理装置及び処理方法
JP3257369B2 (ja) * 1995-09-20 2002-02-18 松下電器産業株式会社 塗膜形成方法および塗膜形成装置
JP3958106B2 (ja) * 2002-04-25 2007-08-15 大日本スクリーン製造株式会社 基板エッチング方法および基板エッチング装置
JP2004335923A (ja) * 2003-05-12 2004-11-25 Sony Corp エッチング方法およびエッチング装置
KR20100000266A (ko) * 2008-06-24 2010-01-06 세메스 주식회사 기판 표면을 선택적으로 에칭하기 위한 기판 처리 장치 및방법
JP5853382B2 (ja) * 2011-03-11 2016-02-09 ソニー株式会社 半導体装置の製造方法、及び電子機器の製造方法
JP6275984B2 (ja) * 2013-09-27 2018-02-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6064875B2 (ja) * 2013-11-25 2017-01-25 東京エレクトロン株式会社 液処理装置、液処理方法及び記憶媒体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08279485A (ja) 1995-04-06 1996-10-22 Nisso Eng Kk 枚葉式スピンエッチング方法

Also Published As

Publication number Publication date
WO2023048064A1 (ja) 2023-03-30
JP2023047615A (ja) 2023-04-06
TWI833360B (zh) 2024-02-21
TW202316515A (zh) 2023-04-16

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