KR20240023514A - 촬상 장치 및 전자 기기 - Google Patents

촬상 장치 및 전자 기기 Download PDF

Info

Publication number
KR20240023514A
KR20240023514A KR1020237042725A KR20237042725A KR20240023514A KR 20240023514 A KR20240023514 A KR 20240023514A KR 1020237042725 A KR1020237042725 A KR 1020237042725A KR 20237042725 A KR20237042725 A KR 20237042725A KR 20240023514 A KR20240023514 A KR 20240023514A
Authority
KR
South Korea
Prior art keywords
imaging device
photoelectric conversion
conversion units
vehicle
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020237042725A
Other languages
English (en)
Korean (ko)
Inventor
미즈키 오노
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Publication of KR20240023514A publication Critical patent/KR20240023514A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H01L27/1462—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H01L27/14609—
    • H01L27/14627—
    • H01L27/14634—
    • H01L27/14645—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
KR1020237042725A 2021-06-25 2022-03-30 촬상 장치 및 전자 기기 Withdrawn KR20240023514A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-105906 2021-06-25
JP2021105906 2021-06-25
PCT/JP2022/015788 WO2022270110A1 (ja) 2021-06-25 2022-03-30 撮像装置および電子機器

Publications (1)

Publication Number Publication Date
KR20240023514A true KR20240023514A (ko) 2024-02-22

Family

ID=84545430

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237042725A Withdrawn KR20240023514A (ko) 2021-06-25 2022-03-30 촬상 장치 및 전자 기기

Country Status (6)

Country Link
US (1) US20240304646A1 (https=)
EP (1) EP4362099A4 (https=)
JP (1) JPWO2022270110A1 (https=)
KR (1) KR20240023514A (https=)
CN (1) CN117296154A (https=)
WO (1) WO2022270110A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018150902A1 (ja) 2017-02-17 2018-08-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子および電子機器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054365A (en) * 1998-07-13 2000-04-25 International Rectifier Corp. Process for filling deep trenches with polysilicon and oxide
KR100764061B1 (ko) * 2006-12-04 2007-10-08 삼성전자주식회사 이미지 센서 및 그 형성 방법
JP6065448B2 (ja) * 2012-08-03 2017-01-25 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
TWI753351B (zh) * 2013-11-29 2022-01-21 日商索尼半導體解決方案公司 攝像元件及電子機器
KR102209097B1 (ko) * 2014-02-27 2021-01-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
US9786704B2 (en) * 2015-09-10 2017-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS image sensor structure with crosstalk improvement
JPWO2017169314A1 (ja) * 2016-03-31 2019-02-07 ソニー株式会社 固体撮像素子、及び電子装置
JP6855287B2 (ja) * 2017-03-08 2021-04-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器
JP7316764B2 (ja) * 2017-05-29 2023-07-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
DE102018124442A1 (de) * 2017-11-15 2019-05-16 Taiwan Semiconductor Manufacturing Co. Ltd. Polarisatoren für Bildsensorvorrichtungen
KR102606735B1 (ko) * 2018-06-19 2023-11-28 에스케이하이닉스 주식회사 반사 방지층 내에 매립된 그리드 패턴들을 갖는 이미지 센서
KR102553314B1 (ko) * 2018-08-29 2023-07-10 삼성전자주식회사 이미지 센서
KR102589608B1 (ko) * 2018-10-22 2023-10-16 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102634950B1 (ko) * 2019-01-11 2024-02-07 삼성전자주식회사 이미지 센서
US10998365B2 (en) * 2019-01-30 2021-05-04 Samsung Electronics Co., Ltd. Image sensor
KR20210081892A (ko) * 2019-12-24 2021-07-02 삼성전자주식회사 이미지 센서 및 그 제조방법
US11367745B2 (en) * 2020-08-20 2022-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and methods for sensing long wavelength light
US11955496B2 (en) * 2020-09-29 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Back-side deep trench isolation structure for image sensor
US11670662B2 (en) * 2020-12-23 2023-06-06 Omnivision Technologies, Inc. Semiconductor substrate with passivated full deep-trench isolation and associated methods of manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018150902A1 (ja) 2017-02-17 2018-08-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子および電子機器

Also Published As

Publication number Publication date
JPWO2022270110A1 (https=) 2022-12-29
CN117296154A (zh) 2023-12-26
US20240304646A1 (en) 2024-09-12
WO2022270110A1 (ja) 2022-12-29
EP4362099A1 (en) 2024-05-01
EP4362099A4 (en) 2024-10-09

Similar Documents

Publication Publication Date Title
US10910289B2 (en) Electronic substrate and electronic apparatus
US20240120356A1 (en) Imaging device and electronic apparatus
WO2024106114A1 (en) Imaging element
US20250336841A1 (en) Photodetection device
KR20240023514A (ko) 촬상 장치 및 전자 기기
US11101309B2 (en) Imaging element, method for manufacturing imaging element, and electronic device
US20250359375A1 (en) Imaging device
US20250072137A1 (en) Light detection device
US20260052790A1 (en) Light detection element, imaging device, and vehicle control system
US20250212543A1 (en) Light detection device and electronic apparatus
WO2025249150A1 (ja) 固体撮像装置及び固体撮像装置の製造方法
US20230253419A1 (en) Solid-state imaging device and method for manufacturing the same
WO2024057471A1 (ja) 光電変換素子、固体撮像素子、測距システム
KR20250005224A (ko) 광 검출 장치
WO2025013515A1 (ja) 光検出装置、撮像装置及び電子機器
WO2026083816A1 (ja) 光検出装置
WO2024024450A1 (ja) 半導体装置及びその製造方法
WO2025105333A1 (ja) 固体撮像装置
WO2025169431A1 (ja) 固体撮像装置
WO2022102549A1 (ja) 固体撮像装置
WO2024038828A1 (ja) 光検出装置
WO2024111107A1 (ja) 受光素子、撮像素子及び撮像装置
CN118830066A (zh) 半导体装置和半导体装置的制造方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20231211

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20250207

Comment text: Request for Examination of Application

PC1202 Submission of document of withdrawal before decision of registration

Comment text: [Withdrawal of Procedure relating to Patent, etc.] Withdrawal (Abandonment)

Patent event code: PC12021R01D

Patent event date: 20250416

WITB Written withdrawal of application