CN117296154A - 成像装置和电子设备 - Google Patents

成像装置和电子设备 Download PDF

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Publication number
CN117296154A
CN117296154A CN202280035036.6A CN202280035036A CN117296154A CN 117296154 A CN117296154 A CN 117296154A CN 202280035036 A CN202280035036 A CN 202280035036A CN 117296154 A CN117296154 A CN 117296154A
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CN
China
Prior art keywords
photoelectric conversion
imaging device
conversion portions
vehicle
end portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202280035036.6A
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English (en)
Chinese (zh)
Inventor
小野瑞生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN117296154A publication Critical patent/CN117296154A/zh
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

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  • Solid State Image Pick-Up Elements (AREA)
CN202280035036.6A 2021-06-25 2022-03-30 成像装置和电子设备 Withdrawn CN117296154A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021105906 2021-06-25
JP2021-105906 2021-06-25
PCT/JP2022/015788 WO2022270110A1 (ja) 2021-06-25 2022-03-30 撮像装置および電子機器

Publications (1)

Publication Number Publication Date
CN117296154A true CN117296154A (zh) 2023-12-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280035036.6A Withdrawn CN117296154A (zh) 2021-06-25 2022-03-30 成像装置和电子设备

Country Status (6)

Country Link
US (1) US20240304646A1 (https=)
EP (1) EP4362099A4 (https=)
JP (1) JPWO2022270110A1 (https=)
KR (1) KR20240023514A (https=)
CN (1) CN117296154A (https=)
WO (1) WO2022270110A1 (https=)

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054365A (en) * 1998-07-13 2000-04-25 International Rectifier Corp. Process for filling deep trenches with polysilicon and oxide
KR100764061B1 (ko) * 2006-12-04 2007-10-08 삼성전자주식회사 이미지 센서 및 그 형성 방법
JP6065448B2 (ja) * 2012-08-03 2017-01-25 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
TWI753351B (zh) * 2013-11-29 2022-01-21 日商索尼半導體解決方案公司 攝像元件及電子機器
KR102209097B1 (ko) * 2014-02-27 2021-01-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
US9786704B2 (en) * 2015-09-10 2017-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS image sensor structure with crosstalk improvement
JPWO2017169314A1 (ja) * 2016-03-31 2019-02-07 ソニー株式会社 固体撮像素子、及び電子装置
US11411030B2 (en) 2017-02-17 2022-08-09 Sony Semiconductor Solutions Corporation Imaging element and electronic apparatus
JP6855287B2 (ja) * 2017-03-08 2021-04-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器
JP7316764B2 (ja) * 2017-05-29 2023-07-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
DE102018124442A1 (de) * 2017-11-15 2019-05-16 Taiwan Semiconductor Manufacturing Co. Ltd. Polarisatoren für Bildsensorvorrichtungen
KR102606735B1 (ko) * 2018-06-19 2023-11-28 에스케이하이닉스 주식회사 반사 방지층 내에 매립된 그리드 패턴들을 갖는 이미지 센서
KR102553314B1 (ko) * 2018-08-29 2023-07-10 삼성전자주식회사 이미지 센서
KR102589608B1 (ko) * 2018-10-22 2023-10-16 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102634950B1 (ko) * 2019-01-11 2024-02-07 삼성전자주식회사 이미지 센서
US10998365B2 (en) * 2019-01-30 2021-05-04 Samsung Electronics Co., Ltd. Image sensor
KR20210081892A (ko) * 2019-12-24 2021-07-02 삼성전자주식회사 이미지 센서 및 그 제조방법
US11367745B2 (en) * 2020-08-20 2022-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and methods for sensing long wavelength light
US11955496B2 (en) * 2020-09-29 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Back-side deep trench isolation structure for image sensor
US11670662B2 (en) * 2020-12-23 2023-06-06 Omnivision Technologies, Inc. Semiconductor substrate with passivated full deep-trench isolation and associated methods of manufacture

Also Published As

Publication number Publication date
JPWO2022270110A1 (https=) 2022-12-29
US20240304646A1 (en) 2024-09-12
WO2022270110A1 (ja) 2022-12-29
KR20240023514A (ko) 2024-02-22
EP4362099A1 (en) 2024-05-01
EP4362099A4 (en) 2024-10-09

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Application publication date: 20231226