WO2022270110A1 - 撮像装置および電子機器 - Google Patents

撮像装置および電子機器 Download PDF

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Publication number
WO2022270110A1
WO2022270110A1 PCT/JP2022/015788 JP2022015788W WO2022270110A1 WO 2022270110 A1 WO2022270110 A1 WO 2022270110A1 JP 2022015788 W JP2022015788 W JP 2022015788W WO 2022270110 A1 WO2022270110 A1 WO 2022270110A1
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WIPO (PCT)
Prior art keywords
imaging device
photoelectric conversion
conversion units
vehicle
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/015788
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English (en)
French (fr)
Japanese (ja)
Inventor
瑞生 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to US18/570,793 priority Critical patent/US20240304646A1/en
Priority to EP22828029.3A priority patent/EP4362099A4/en
Priority to KR1020237042725A priority patent/KR20240023514A/ko
Priority to JP2023529614A priority patent/JPWO2022270110A1/ja
Priority to CN202280035036.6A priority patent/CN117296154A/zh
Publication of WO2022270110A1 publication Critical patent/WO2022270110A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Definitions

  • the thickness of the second member may be 20 nm or more, and the length of the second member in the depth direction may be 1000 nm or more.
  • the plurality of photoelectric conversion units may be divided into groups arranged in an array, and may further include microlenses provided corresponding to each group.
  • the thickness of the silicon oxide 30 in the trench was 15 nm, and the thickness of the polycrystalline silicon 32 was 70 nm.
  • the thickness of the silicon oxide 30 in the trench was 10 nm, and the thickness of the polycrystalline silicon 32 was 80 nm.
  • the thickness of the silicon oxide 30 in the trench was set to 5 nm, and the thickness of the polycrystalline silicon 32 was set to 90 nm.
  • the quantum efficiency Qe decreases linearly as the thickness of the silicon oxide 30 decreases, and becomes nonlinear when the thickness of the silicon oxide 30 becomes thinner than 20 nm. to When blue light enters the imaging device, the quantum efficiency is worse than when red light or green light enters.
  • FIG. 16A is a cross-sectional view cut along the cut plane AA shown in FIG. 16B
  • FIG. 16B is a plan view of one pixel group.
  • the functional configuration of the integrated control unit 7600 includes a microcomputer 7610, a general-purpose communication I/F 7620, a dedicated communication I/F 7630, a positioning unit 7640, a beacon receiving unit 7650, an in-vehicle equipment I/F 7660, an audio image output unit 7670, An in-vehicle network I/F 7680 and a storage unit 7690 are shown.
  • Other control units are similarly provided with microcomputers, communication I/Fs, storage units, and the like.
  • the in-vehicle information detection unit 7500 detects in-vehicle information.
  • the in-vehicle information detection unit 7500 is connected to, for example, a driver state detection section 7510 that detects the state of the driver.
  • the driver state detection unit 7510 may include a camera that captures an image of the driver, a biosensor that detects the biometric information of the driver, a microphone that collects sounds in the vehicle interior, or the like.
  • a biosensor is provided, for example, on a seat surface, a steering wheel, or the like, and detects biometric information of a passenger sitting on a seat or a driver holding a steering wheel.
  • the in-vehicle information detection unit 7500 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 7510, and determine whether the driver is dozing off. You may The in-vehicle information detection unit 7500 may perform processing such as noise canceling processing on the collected sound signal.
  • General-purpose communication I / F 7620 for example, via a base station or access point, external network (e.g., Internet, cloud network or operator-specific network) equipment (e.g., application server or control server) connected to You may
  • external network e.g., Internet, cloud network or operator-specific network
  • equipment e.g., application server or control server
  • the general-purpose communication I/F 7620 uses, for example, P2P (Peer To Peer) technology to connect terminals (for example, terminals of drivers, pedestrians, stores, or MTC (Machine Type Communication) terminals) near the vehicle. may be connected with P2P (Peer To Peer) technology to connect terminals (for example, terminals of drivers, pedestrians, stores, or MTC (Machine Type Communication) terminals) near the vehicle.
  • P2P Peer To Peer
  • MTC Machine Type Communication
  • the imaging device according to (1) wherein the second member is thinned along the first direction.
  • the imaging device according to (1) further comprising a semiconductor layer having a conductivity type different from that of the photoelectric conversion section in a region of the photoelectric conversion section other than where the second member is arranged.
  • the second member extends to the second end side along the first direction, and the sum of the thickness of the first member and the thickness of the second member is uniform along the first direction.
  • the imaging device according to (1) The imaging device according to (1).
  • the image pickup device according to any one of (1) to (15), further comprising a circuit having a pixel transistor arranged on the second end side.
  • each of the plurality of photoelectric conversion units contains silicon
  • the second member contains silicon oxide.
  • An image pickup device and a signal processing unit that performs signal processing based on a pixel signal picked up by the image pickup device, and the image pickup device is provided for each pixel and each has a first end on the light incident side. and a second end opposite to the first end; and from the first end to the second end along a boundary of each of the plurality of photoelectric conversion parts. and a first member arranged in the first direction of and between each of the plurality of photoelectric conversion units and the first member and on the first end side and having a lower refractive index than the photoelectric conversion unit and a second member containing a material.

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  • Solid State Image Pick-Up Elements (AREA)
PCT/JP2022/015788 2021-06-25 2022-03-30 撮像装置および電子機器 Ceased WO2022270110A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US18/570,793 US20240304646A1 (en) 2021-06-25 2022-03-30 Imaging device and electronic apparatus
EP22828029.3A EP4362099A4 (en) 2021-06-25 2022-03-30 IMAGING DEVICE AND ELECTRONIC DEVICE
KR1020237042725A KR20240023514A (ko) 2021-06-25 2022-03-30 촬상 장치 및 전자 기기
JP2023529614A JPWO2022270110A1 (https=) 2021-06-25 2022-03-30
CN202280035036.6A CN117296154A (zh) 2021-06-25 2022-03-30 成像装置和电子设备

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021105906 2021-06-25
JP2021-105906 2021-06-25

Publications (1)

Publication Number Publication Date
WO2022270110A1 true WO2022270110A1 (ja) 2022-12-29

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PCT/JP2022/015788 Ceased WO2022270110A1 (ja) 2021-06-25 2022-03-30 撮像装置および電子機器

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US (1) US20240304646A1 (https=)
EP (1) EP4362099A4 (https=)
JP (1) JPWO2022270110A1 (https=)
KR (1) KR20240023514A (https=)
CN (1) CN117296154A (https=)
WO (1) WO2022270110A1 (https=)

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US20080128845A1 (en) * 2006-12-04 2008-06-05 Samsung Electronics Co., Ltd. Image sensor and method of forming the same
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WO2017169314A1 (ja) * 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子、及び電子装置
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See also references of EP4362099A4

Also Published As

Publication number Publication date
JPWO2022270110A1 (https=) 2022-12-29
CN117296154A (zh) 2023-12-26
US20240304646A1 (en) 2024-09-12
KR20240023514A (ko) 2024-02-22
EP4362099A1 (en) 2024-05-01
EP4362099A4 (en) 2024-10-09

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