KR20240023514A - Imaging devices and electronic devices - Google Patents

Abstract

[Problem] To provide an imaging device capable of suppressing decline in quantum efficiency and an electronic device using the imaging device.
[Solution] An imaging device of the present disclosure includes a plurality of photoelectric conversion units provided for each pixel and each having a first end on a light incident side and a second end on a side opposite to the first end, and the plurality of photoelectric conversion units. a first member disposed in a first direction from the first end to the second end along each boundary of the unit, and also provided at the first end between each of the plurality of photoelectric conversion units and the first member; It is provided with a second member made of a material with a lower refractive index than the photoelectric conversion unit.

Description

Imaging devices and electronic devices

Embodiments of the present disclosure relate to imaging devices and electronic devices.

An imaging device is known in which electrodes are embedded in a trench that separates a photoelectric conversion layer into a plurality of pixels (Patent Document 1). In this imaging device, by applying a negative bias voltage to the electrode, holes generated in the photoelectric conversion layer when light is received are collected, and the occurrence of dark current and white spots in the captured image is suppressed.

Publication No. WO2018/150902

However, in the imaging device described in Patent Document 1, when polycrystalline silicon is used for the electrode, there is a problem that light is absorbed by the polycrystalline silicon and quantum efficiency decreases.

The present disclosure provides an imaging device capable of suppressing a decrease in quantum efficiency and an electronic device using the imaging device.

An imaging device according to a first aspect of the present disclosure includes a plurality of photoelectric conversion units provided for each pixel and each having a first end on a light incident side and a second end on a side opposite to the first end, and the plurality of photoelectric conversion units. A first member disposed in a first direction from the first end to the second end along each boundary of the conversion unit, and between each of the plurality of photoelectric conversion units and the first member and on the side of the first end. and a second member containing a material with a lower refractive index than the photoelectric conversion unit.

In the imaging device according to the first aspect, the second member may include a conductor.

In the imaging device according to the first aspect, the second member may contain sealed air.

In the imaging device according to the first aspect, the thickness of the second member may be reduced along the first direction.

In the imaging device according to the first aspect, a semiconductor layer of a conductivity type different from that of the photoelectric conversion unit may be further provided in a region of the photoelectric conversion unit other than where the second member is disposed.

In the imaging device according to the first aspect, the second member extends to the second end side along the first direction and has a thickness of the first member and a thickness of the second member along the first direction. The sum may be uniform.

In the imaging device according to the first aspect, the thickness of the second member on the first end side may be thinner than the thickness on the second end side.

In the imaging device according to the first aspect, the plurality of photoelectric conversion units each have a first part and a second part, and the first part and the second part have a boundary other than a portion of the central portion when viewed from the top. It may be surrounded by the first member and may be in contact with the above portion.

In the imaging device according to the first aspect, the plurality of photoelectric conversion units each have a substantially rectangular shape in plan view, and the second member has a thickness at a portion where the thickness at the corner portion of the substantially rectangular portion is different. It may be thicker than that.

In the imaging device according to the first aspect, the thickness of the second member may be 20 nm or more, and the length of the second member in the depth direction may be 1000 nm or more.

In the imaging device according to the first aspect, the second member may be arranged to surround each of the plurality of photoelectric conversion units.

In the imaging device according to the first aspect, the first member may contain polysilicon.

The imaging device according to the first aspect may further include a micro lens provided corresponding to each of the plurality of photoelectric conversion units.

The imaging device according to the first aspect may further include a color filter provided between each of the plurality of photoelectric conversion units and the micro lens.

In the imaging device according to the first aspect. The plurality of photoelectric conversion units may be divided into groups arranged in an array, and may further include micro lenses provided corresponding to each group.

In the imaging device according to the first aspect, a circuit disposed on the second end side and having a pixel transistor may be further provided.

In the imaging device according to the first aspect, the plurality of photoelectric conversion units may each contain silicon, and the second member may contain silicon oxide.

An electronic device according to a second aspect includes an imaging device and a signal processing unit that performs signal processing based on a pixel signal imaged by the imaging device, and the imaging device is provided for each pixel, each of which is on the light incident side. A plurality of photoelectric conversion units having a first end and a second end opposite to the first end, and a first direction from the first end to the second end along each boundary of the plurality of photoelectric conversion units. It is provided with a first member arranged, and a second member provided between each of the plurality of photoelectric conversion units and the first member and on the side of the first end and containing a material with a lower refractive index than the photoelectric conversion unit.

1 is a cross-sectional view showing an imaging device according to a first embodiment.
FIG. 2 is a cross-sectional view taken along section AA shown in FIG. 1.
Figure 3 is a cross-sectional view showing an imaging device of a sample used in simulation.
FIG. 4 is a view showing first to sixth samples in which the thickness of the light absorption suppressing portion of the sample shown in FIG. 3 is changed.
FIG. 5 is a graph showing simulation results of calculating quantum efficiencies for red light, green light, and blue light of the first to sixth samples shown in FIG. 4.
Fig. 6 is a cross-sectional view showing the imaging device of the sample used in simulation.
FIG. 7 is a cross-sectional view showing a light absorption suppressing portion of the imaging device shown in FIG. 6.
8A to 8C are diagrams showing the quantum effect when the length of the light absorption suppression portion in the depth direction is changed.
9A to 9C are diagrams showing the quantum effect when the length of the light absorption suppression portion in the depth direction is changed.
10A to 10E are cross-sectional views showing the manufacturing process of the light absorption suppressor in the imaging device of the first embodiment.
Fig. 11 is a cross-sectional view showing an imaging device according to the second embodiment.
Fig. 12 is a cross-sectional view showing an imaging device according to the third embodiment.
Fig. 13 is a cross-sectional view showing an imaging device according to the fourth embodiment.
Fig. 14 is a cross-sectional view showing an imaging device according to the fifth embodiment.
Fig. 15 is a cross-sectional view showing an imaging device according to the sixth embodiment.
Fig. 16A is a cross-sectional view of an imaging device according to the seventh embodiment.
Fig. 16B is a top view of one pixel group of the imaging device according to the seventh embodiment.
Fig. 17 is a cross-sectional view showing an imaging device according to the eighth embodiment.
Fig. 18 is a cross-sectional view showing an imaging device according to the ninth embodiment.
Fig. 19 is a cross-sectional view showing an imaging device according to the tenth embodiment.
20 is a block diagram showing an example of the schematic configuration of a vehicle control system.
Fig. 21 is an explanatory diagram showing an example of the installation positions of the information detection unit and the imaging unit outside the vehicle.

Embodiments of the present disclosure will be described with reference to the drawings. In the following embodiments, the structural parts of the imaging device and the electronic device are mainly explained, but there may be structural parts and functions in the imaging device and the electronic device that are not shown or explained. The following description does not exclude components or functions not shown or explained.

In addition, the drawings referred to in the following description are drawings to facilitate explanation and understanding of the embodiments of the present disclosure, and for ease of understanding, the shapes, dimensions, ratios, etc. shown in the drawings may differ from the actual ones. there is.

(First Embodiment)

The imaging device according to the first embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a cross-sectional view of the imaging device of the first embodiment, and FIG. 2 is a cross-sectional view taken along the section A-A shown in FIG. 1. The imaging device of this first embodiment has at least one pixel group, and this pixel group includes four pixels 10a, 10b, 10c, and 10d arranged in two rows and two columns. Each pixel is provided with a photoelectric conversion unit. For example, the pixel 10a has a photoelectric conversion unit 12a, the pixel 10b has a photoelectric conversion unit 12b, the pixel 10c has a photoelectric conversion unit 12c, and the pixel 10d has a photoelectric conversion unit 12d. These photoelectric conversion units 12a, 12b, 12c, and 12d are insulated and separated from each other by a trench 13 formed in the photoelectric conversion layer 12. That is, the trench 13 is formed to surround each of the photoelectric conversion units 12a, 12b, 12c, and 12d. Then, a conductor (first member) 14 is embedded in each trench 13. In this embodiment, polycrystalline silicon, for example, is used as the conductor 14. A negative bias potential is applied to this conductor 14. By applying a negative bias potential to the conductor 14, holes generated during light reception are collected in the conductor 14, and the occurrence of dark current or white spots in a captured image can be suppressed.

A micro lens 18 is provided above each of the photoelectric conversion units 12a, 12b, 12c, and 12d. A color filter is provided between each of the photoelectric conversion units 12a, 12b, 12c, and 12d and the corresponding micro lens 18. For example, a color filter 17a is provided between the photoelectric conversion unit 12a and the micro lens 18, and a color filter 17b is provided between the photoelectric conversion unit 12b and the micro lens 18. Inter-pixel light blocking portions 16 are provided to surround these color filters. This inter-pixel light blocking portion 16 is disposed on the conductor 14 buried in the trench 13.

As shown in FIG. 1, in each of the photoelectric conversion units 12a, 12b, 12c, and 12d, a light absorption suppressor (second member) 15 is provided at the upper end on the color filter side. As shown in FIG. 2, the light absorption suppression portion 15 is formed to surround each of the photoelectric conversion portions 12a, 12b, 12c, and 12d. And, as shown in FIG. 2, the thickness b of the corner portion of the light absorption suppressor 15 of the photoelectric conversion portion is thicker than the thickness a of the other portions. As the light absorption suppressing portion 15, a material with a lower refractive index than the material contained in the photoelectric conversion portions 12a, 12b, 12c, and 12d is used. For example, if the photoelectric conversion parts 12a, 12b, 12c, and 12d contain silicon, for example, silicon oxide (SiO) is used as the light absorption suppressor 15.

At the lower end of the pixel group (the end opposite to the microlens 18), pixel transistors for reading signals from the pixel group and a circuit 20 for driving them are provided. This circuit 20 includes a first step portion 26 including a transmission gate TG connected to the photoelectric conversion portions 12a, 12b, 12c, and 12d, pixels such as a reset transistor RST, an amplifying transistor AMP, and a selection transistor SEL. It has a three-stage structure having a second step portion 24 where transistors are placed and a stacked wiring portion 22 where wiring is stacked.

As explained above, in the imaging device of this embodiment, a conductor 14 made of, for example, polycrystalline silicon is provided in the trench 13 that separates the pixels 10a, 10b, 10c, and 10d from each other. , a light absorption suppressing portion 15 is provided between this conductor 14 and the photoelectric conversion portions 12a, 12b, 12c, and 12d. In addition, the light absorption suppressor 15 is provided at the upper end of the color filter side in each of the photoelectric conversion portions 12a, 12b, 12c, and 12d, and the light absorption suppressor 15 includes the photoelectric conversion portion 12a. , 12b, 12c, and 12d) A material with a lower refractive index is used. As a result, it becomes possible to suppress the seepage of evanescent light, which is the main cause of the light generated in the photoelectric conversion layer 12 when receiving light being absorbed by the conductor 14 containing polycrystalline silicon, to prevent quantum efficiency from decreasing. can be suppressed. Additionally, in this specification, a photoelectric conversion unit is provided for each pixel, and the photoelectric conversion layer 12 is a semiconductor layer including all photoelectric conversion units.

Next, in the imaging device of the first embodiment, the appropriate thickness of the light absorption suppression portion 15 was determined using simulation. A cross section of the imaging device used in this simulation is shown in Figure 3. The imaging device shown in FIG. 3 has photoelectric conversion portions 12a and 12b separated from each other by a trench filled with silicon oxide (SiO) 30. The silicon oxide 30 is disposed to cover the polycrystalline silicon 32, and the thickness within the trench is adjusted by the thickness of the polycrystalline silicon 32. On each photoelectric conversion layer 12, a fixed charge film 34 and an oxide film 36 disposed on the fixed charge film 34 are provided. Additionally, an uneven structure 38 is provided on the light incident surface of the semiconductor substrate to prevent reflection of light.

Color filters 17a and 17b are disposed on the oxide film 36 corresponding to each photoelectric conversion unit 12a and 12b. The color filter 17a is, for example, a green filter, and the color filter 17b is a red filter. Additionally, although not shown in FIG. 3, the color filter also includes a blue filter. These color filters are each separated by a low-index waveguide 39. That is, the low-refraction waveguide 39 optically separates the color filters from each other, is located on the trench, and is used to detect light leaking from the polycrystalline silicon 32 to the silicon oxide 30 disposed in the trench. On the color filters 17a and 17b, a micro lens 18 is provided corresponding to each photoelectric conversion unit.

In the imaging device having this structure, a sample in which the thickness of the silicon oxide 30 in the trench is adjusted by the thickness of the polycrystalline silicon 32 is shown in FIG. 4. For each sample, the first to sixth samples were prepared with a trench width of 100 nm. In the first sample, the thickness of the silicon oxide 30 in the trench was 100 nm, and the thickness of the polycrystalline silicon 32 was 0 nm. In the second sample, the thickness of the silicon oxide 30 in the trench was 30 nm, and the thickness of the polycrystalline silicon 32 was 40 nm. In the third sample, the thickness of the silicon oxide 30 in the trench was 20 nm, and the thickness of the polycrystalline silicon 32 was 60 nm. In the fourth sample, the thickness of the silicon oxide 30 in the trench was 15 nm, and the thickness of the polycrystalline silicon 32 was 70 nm. In the fifth sample, the thickness of the silicon oxide 30 in the trench was 10 nm, and the thickness of the polycrystalline silicon 32 was 80 nm. In the sixth sample, the thickness of the silicon oxide 30 in the trench was 5 nm, and the thickness of the polycrystalline silicon 32 was 90 nm.

Simulations were performed on the first to sixth samples to determine the quantum efficiency Qe (the ratio of photons incident on the imaging device that are converted into electrons that can be extracted as electrical signals). This result is shown in Figure 5. In this simulation, calculations were made assuming that the wavelength of red light was 600 nm, that of green light was 530 nm, and that of blue light was 460 nm. When green light and red light are incident on the imaging device, the quantum efficiency Qe decreases linearly as the thickness of the silicon oxide 30 decreases, and decreases non-linearly when the thickness of the silicon oxide 30 becomes thinner than 20 nm. . When blue light is incident on an imaging device, quantum efficiency is worse compared to when red light or green light is incident. In the case where blue light is incident on the imaging device, as the thickness of the silicon oxide 30 becomes thinner to 10 nm, the quantum efficiency Qe decreases linearly, and as it becomes thinner than 10 nm, it decreases non-linearly. From the above, in the imaging device shown in FIG. 4, when the thickness of silicon oxide is less than 20 nm, the seepage of evanescent light increases. For this reason, if the thickness of the silicon oxide 30, that is, the thickness of the light absorption suppressor 15, is 20 nm or more, it becomes possible to suppress the seepage of evanescent light, and a decrease in quantum efficiency can be suppressed.

Next, in the imaging device of the first embodiment, the appropriate length of the light absorption suppression portion 15 in the depth direction was determined using simulation. A cross section of the imaging device used in this simulation is shown in Figure 6. The imaging device shown in FIG. 6 has a configuration in which a portion of the polycrystalline silicon in the trench is replaced by a fixed charge film 34. FIG. 7 shows a configuration in which a portion of polycrystalline silicon is replaced with a fixed charge film 34 in the trench. An oxidized member 38a made of the same material as the concavo-convex structure 38 is disposed along the side of the trench, and a fixed charge film 34 is disposed along the side and bottom surfaces of the oxidized member 38a. At the center of the fixed charge film 34, an oxide film 36b is disposed, reaching the bottom of the fixed charge film 34.

Prepare the first to sixth samples that are the subject of simulation. The first sample is an imaging device in which all silicon oxide is embedded in the trench (hereinafter referred to as FTI-SiO), the second sample is an imaging device in which all polycrystalline silicon is embedded in the trench (hereinafter referred to as FTI-Poly), and the third sample is an imaging device in which all silicon oxide is embedded in the trench (hereinafter referred to as FTI-Poly). The sample is an imaging device (hereinafter also referred to as SCF200) with a depth of the fixed charge film 34 in the trench of 200 nm, the fourth sample is an imaging device with a depth of the fixed charge film 34 in the trench of 400 nm, and the fifth sample is a trench. The sixth sample is an imaging device in which the depth of the fixed charge film 34 in the trench is 800 nm (hereinafter also referred to as SCF800), and the sixth sample is an imaging device in which the depth of the fixed charge film 34 in the trench is 1000 nm (hereinafter also referred to as SCF1000). That is, the first sample is an imaging device with little evanescent light seeping out, the second sample is an imaging device with the largest evanescent light seeping out, and the third to sixth samples are an imaging device with evanescent light seeping out the most. It is an imaging device located in an intermediate position between the first sample and the second sample.

The results of calculating the quantum efficiency Qe when blue light with an incident angle of 0 degrees is irradiated on the first to sixth samples are shown in FIG. 8A. The sixth sample can obtain almost the same quantum efficiency as the first sample, and can obtain a quantum efficiency that is about 5% higher than that of the second sample. Quantum efficiency Qe is increasing in the order of the second sample, third sample, fourth sample, fifth sample, and sixth sample.

The results of calculating the quantum efficiency Qe when green light with an incident angle of 0 degrees is irradiated on the first to sixth samples are shown in FIG. 8B. The sixth sample has a quantum efficiency that is 1.5% lower than the first sample, but can obtain a quantum efficiency that is about 3% higher than the second sample. Quantum efficiency Qe is increasing in the order of the second sample, third sample, fourth sample, fifth sample, and sixth sample.

The results of calculating the quantum efficiency Qe when red light with an incident angle of 0 degrees is irradiated on the first to sixth samples are shown in FIG. 8C. The sixth sample has a quantum efficiency that is 1.4% lower than the first sample, but can obtain a quantum efficiency that is about 1% higher than the second sample. Quantum efficiency Qe is increasing in the order of the second sample, third sample, fourth sample, fifth sample, and sixth sample.

The results of calculating the quantum efficiency Qe when blue light with an incident angle of 36 degrees is irradiated on the first to sixth samples are shown in FIG. 9A. The sixth sample can obtain almost the same quantum efficiency as the first sample, and can obtain a quantum efficiency that is about 5% higher than that of the second sample. Quantum efficiency Qe is increasing in the order of the second sample, third sample, fourth sample, fifth sample, and sixth sample.

The results of calculating the quantum efficiency Qe when green light with an incident angle of 36 degrees is irradiated on the first to sixth samples are shown in FIG. 9B. The sixth sample has a quantum efficiency that is 1.3% lower than the first sample, but can obtain a quantum efficiency that is about 4% higher than the second sample. Quantum efficiency Qe is increasing in the order of the second sample, third sample, fourth sample, fifth sample, and sixth sample.

The results of calculating the quantum efficiency Qe when red light with an incident angle of 0 degrees is irradiated on the first to sixth samples are shown in FIG. 9C. The sixth sample has a quantum efficiency that is 3% lower than that of the first sample, but can obtain a quantum efficiency that is about 2% higher than that of the second sample. Quantum efficiency Qe is increasing in the order of the second sample, third sample, fourth sample, fifth sample, and sixth sample.

As can be seen from FIGS. 8A and 9A, in the case of blue light, quantum efficiency is greatly improved when the length of the fixed charge film 34 in the depth direction is 200 nm, but increases slightly at subsequent lengths. As can be seen from FIGS. 8B and 9B, in the case of green light, the sixth sample has a depth direction length of the fixed charge film 34 of 800 nm, and the quantum efficiency is improved by 2.4% to 3.2% compared to the second sample. The length of the fixed charge film 34 in the depth direction is 100 nm, and the quantum efficiency is improved by 3% to about 4%. As can be seen from FIGS. 8C and 9C, in the case of red light, the quantum efficiency increases slightly as the length of the fixed charge film 34 in the depth direction increases.

As can be seen from FIGS. 8A to 9C, in the case of red light, the quantum efficiency is minimal even if the length of the fixed charge film 34 in the depth direction is increased. However, in the case of green light and blue light, the quantum efficiency increases as the length of the fixed charge film 34 in the depth direction increases, and the length of the fixed charge film 34 in the depth direction is 1000 nm (1 ㎛), and the EVA The quantum efficiency of the first sample, in which almost no nescent light leaks out, is approached, and the effect of suppressing light absorption can be obtained.

Next, the manufacturing method of the light absorption suppression portion 15 of the imaging device of the first embodiment will be described with reference to FIGS. 10A to 10E. First, as shown in FIG. 10A, a photoelectric conversion layer 12 is formed on the pixel transistors and the circuit 20 that drives them, and a trench is formed in the photoelectric conversion layer 12 to separate and optically insulate the pixels. is formed, and the conductor 14 is buried in this trench. Thereby, the photoelectric conversion layer 12 becomes the photoelectric conversion unit 12. Subsequently, a mask 400 is formed on the photoelectric conversion unit 12 and the conductor 14 (see FIG. 10A).

Next, dry etching, for example, RIE (Reactive Ion Etching), is performed on the photoelectric conversion unit 12 using the mask 400, whereby the photoelectric conversion unit 12 is etched to a depth of, for example, 1 μm. . The area 402 from which the photoelectric conversion unit 12 is removed by etching becomes the area where the light absorption suppression unit 15 is provided. Afterwards, the mask 400 is removed (see FIG. 10B).

Next, the region 402 is filled by depositing, for example, silicon oxide 410 (see Fig. 10C). Subsequently, the surface of the silicon oxide 410 is planarized by CMP (Chemical Mechanical Etching), and the surface of the photoelectric conversion unit 12 is exposed (see FIG. 10D). As a result, the light absorption suppressing portion 15 containing silicon oxide is formed. Afterwards, a fixed charge film 420 is deposited, and an oxide film 430 is formed on the fixed charge film 420.

As explained above, according to the first embodiment, it is possible to provide an imaging device capable of suppressing a decrease in quantum efficiency.

(Second Embodiment)

An imaging device according to the second embodiment is shown in FIG. 11. The imaging device of this second embodiment has a structure in which, in the imaging device shown in FIG. 1, the material of the light absorption suppressing portion 15 is made of silicon oxide (SiO) and a material having a lower refractive index than the material of the photoelectric conversion portion is used. there is. For example, if the photoelectric conversion units 12a and 12b are semiconductors containing silicon, a material with a lower refractive index than silicon is used for the light absorption suppression unit 15. If the photoelectric conversion units 12a and 12b contain a compound semiconductor, a material with a lower refractive index than the compound semiconductor is used. By configuring in this way, it becomes possible to improve the reflectance and suppress absorption of light into polycrystalline silicon. Like the first embodiment, the imaging device of the second embodiment can also suppress a decrease in quantum efficiency.

(Third Embodiment)

An imaging device according to the third embodiment is shown in FIG. 12. In the imaging device of this third embodiment shown in FIG. 1, the light absorption suppressor 15 has a structure in which air is sealed instead of silicon oxide. Since air has a lower refractive index than silicon, the imaging device of the third embodiment can also suppress a decrease in quantum efficiency, similar to the first embodiment.

(Fourth Embodiment)

An imaging device according to the fourth embodiment is shown in FIG. 13. In the imaging device of this fourth embodiment shown in FIG. 1, the light absorption suppressing portion 15 has a configuration in which the thickness decreases along the depth direction. As a result, the thickness of the light absorption suppression portion in the depth direction becomes thin, and the area to which the electric field acting on the photoelectric conversion portion 12 from the conductor 14 is applied can be expanded. In the superficial part, where the seepage of evanescent light is strong, it is suppressed by the thick light absorption suppressor 15, and in the deep part, by applying a negative bias to the conductor 14, the occurrence of white spots in the captured image is suppressed. Like the first embodiment, the imaging device of the fourth embodiment can also suppress a decrease in quantum efficiency.

(Fifth Embodiment)

An imaging device according to the fifth embodiment is shown in FIG. 14. In the imaging device of this fifth embodiment, in the imaging device shown in FIG. 1, the area of the upper ends of the photoelectric conversion units 12a and 12b surrounded by the light absorption suppressor 15 is the photoelectric conversion unit 12a and 12b. It has a configuration with a semiconductor layer 28 of a conductivity type different from the conductivity type of. Since the negative bias applied to the conductor 14 does not act on the area surrounded by the light absorption suppressing portion 15, the semiconductor layer 28 of a different conductivity type from the photoelectric conversion portions 12a and 12b is provided. , the occurrence of white spots in captured images can be suppressed. Like the first embodiment, the imaging device of the fifth embodiment can also suppress a decrease in quantum efficiency.

(6th embodiment)

An imaging device according to the sixth embodiment is shown in FIG. 15. In the imaging device of this sixth embodiment, in the imaging device shown in FIG. 1, the light absorption suppressing portion 15 is provided not only at the upper end of the photoelectric conversion portions 12a and 12b but also at the lower end along the depth direction, and It is configured so that the sum of the thickness of the conductor 14 and the thickness of the light absorption suppression portion 15 is substantially constant. For this reason, the light absorption suppressing portion 15 becomes thick at the upper end of the photoelectric conversion portions 12a and 12b, and becomes thinner at the lower end. Since the thickness of the light absorption suppression portion 15 is thicker at the upper end of the photoelectric conversion section, where evanescent light seeps out strongly, than at other portions, a decrease in quantum efficiency can be suppressed, as in the first embodiment. Additionally, in this embodiment, the thickness (horizontal length in the drawing) of the photoelectric conversion units 12a and 12b is substantially constant.

(7th embodiment)

An imaging device according to the seventh embodiment will be described with reference to FIGS. 16A and 16B. FIG. 16A is a cross-sectional view taken along the section A-A shown in FIG. 16B, and FIG. 16B is a top view of one pixel group.

In the imaging device of this seventh embodiment, in the imaging device shown in FIG. 1, in a pixel group consisting of four pixels 10a, 10b, 10c, and 10d, the photoelectric of each pixel, for example, pixel 10a, The conversion unit 12a is divided into two photoelectric conversion parts 12a ₁ and 12a ₂ , and the two divided photoelectric conversion parts 12a ₁ and 12a ₂ are separated by a conductor 14a embedded in the trench. As can be seen from FIG. 16B, the photoelectric conversion portions 12a ₁ and 12a ₂ are separated by a conductor 14a provided in the trench. This conductor 14a is cut in the center when viewed from the top, and thereby the photoelectric conversion part 12a ₁ and the photoelectric conversion part 12a ₂ are connected at this cut location. The side portion of the conductor 14a is surrounded by the light absorption suppression portion 15 at the upper end of the photoelectric conversion portions 12a ₁ and 12a ₂ . Additionally, the micro lens 18 is shared by two photoelectric conversion portions 12a ₁ and 12a ₂ .

In the seventh embodiment configured in this way, the phase difference of the image can be detected by dividing the photoelectric conversion section of each pixel into two photoelectric conversion sections. Like the first embodiment, the imaging device of the seventh embodiment can also suppress a decrease in quantum efficiency.

(8th embodiment)

An imaging device according to the eighth embodiment is shown in FIG. 17. In the imaging device shown in FIG. 1, a micro lens 18 is provided for each pixel constituting one pixel group. However, the eighth embodiment has a configuration in which one micro lens is provided for one pixel group. Other than the microlens 18, it has the same configuration as the first embodiment. Like the first embodiment, the imaging device of the eighth embodiment can also suppress a decrease in quantum efficiency.

(9th embodiment)

An imaging device according to the ninth embodiment is shown in FIG. 18. In the imaging device shown in FIG. 1, pixel transistors and a circuit 20 for driving them are provided for one pixel group, and this circuit has a three-stage structure. The imaging device of the ninth embodiment has a configuration in which pixel transistors such as the reset transistor RST, the amplifying transistor AMP, and the selection transistor SEL are arranged in the same layer. Other than that, it has the same configuration as the imaging device of the first embodiment. Like the first embodiment, the imaging device of the ninth embodiment can also suppress a decrease in quantum efficiency.

(10th embodiment)

An imaging device according to the tenth embodiment is shown in FIG. 19. In the imaging device shown in FIG. 1, the conductor 14 contained polycrystalline silicon, for example. In the imaging device of the tenth embodiment, a conductive metal material with a lower refractive index than the material included in the photoelectric conversion unit, such as tantalum oxide or tungsten, is used as the conductor 14. Like the first embodiment, the imaging device of the tenth embodiment can also suppress a decrease in quantum efficiency.

(Application example)

The technology of this disclosure can be applied to various products. For example, the technology related to the present disclosure applies to any type of moving vehicle such as a car, electric vehicle, hybrid electric vehicle, two-wheeled vehicle, bicycle, personal mobility, airplane, drone, ship, robot, construction machine, or agricultural machine (tractor). It may be realized as a device mounted on.

FIG. 20 is a block diagram showing a schematic configuration example of a vehicle control system 7000, which is an example of a moving object control system to which the technology of the present disclosure can be applied. The vehicle control system 7000 includes a plurality of electronic control units connected through a communication network 7010. In the example shown in FIG. 19, the vehicle control system 7000 includes a drive system control unit 7100, a body system control unit 7200, a battery control unit 7300, an outside-the-vehicle information detection unit 7400, and an in-vehicle information detection unit 7500. ) and an integrated control unit 7600. The communication network 7010 that connects these plurality of control units is, for example, any standard such as CAN (Controller Area Network), LIN (Local Interconnect Network), LAN (Local Area Network), or FlexRay (registered trademark). Any vehicle-mounted communication network that complies with .

Each control unit includes a microcomputer that performs calculation processing according to various programs, a storage unit that stores programs executed by the microcomputer or parameters used in various calculations, and a driving circuit that drives various control target devices. Equipped with Each control unit is provided with a network I/F for communication between other control units through the communication network 7010, and communicates with devices or sensors inside and outside the vehicle by wired communication or wireless communication. It is equipped with a communication I/F to perform. In Figure 20, the functional configuration of the integrated control unit 7600 includes a microcomputer 7610, a general-purpose communication I/F (7620), a dedicated communication I/F (7630), a positioning unit 7640, and a beacon receiving unit 7650. , an in-vehicle device I/F 7660, an audio image output unit 7670, an in-vehicle network I/F 7680, and a storage unit 7690 are shown. Other control units similarly include a microcomputer, communication I/F, and storage unit.

The drive system control unit 7100 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 7100 includes a driving force generating device for generating driving force of the vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering mechanism for adjusting the steering angle of the vehicle. , and a control device such as a braking device that generates braking force of the vehicle. The drive system control unit 7100 may have a function as a control device such as an Antilock Brake System (ABS) or Electronic Stability Control (ESC).

A vehicle state detection unit 7110 is connected to the drive system control unit 7100. The vehicle state detection unit 7110 includes, for example, a gyro sensor that detects the angular velocity of the axial rotation movement of the vehicle body, an acceleration sensor that detects the acceleration of the vehicle, or an operation amount of the accelerator pedal, an operation amount of the brake pedal, a steering angle of the steering wheel, At least one sensor for detecting engine rotation speed or wheel rotation speed is included. The drive system control unit 7100 performs calculation processing using signals input from the vehicle state detector 7110 to control the internal combustion engine, drive motor, electric power steering device, or brake device.

The body system control unit 7200 controls the operation of various devices installed on the vehicle body according to various programs. For example, the body system control unit 7200 functions as a control device for various lamps such as a keyless entry system, smart key system, power window device, head lamp, back lamp, brake lamp, turn signal lamp, or fog lamp. do. In this case, radio waves transmitted from a portable device that replaces the key or signals from various switches may be input to the body system control unit 7200. The body system control unit 7200 receives the input of these radio waves or signals and controls the vehicle's door lock device, power window device, lamp, etc.

The battery control unit 7300 controls the secondary battery 7310, which is a power source for the driving motor, according to various programs. For example, information such as battery temperature, battery output voltage, or remaining battery capacity is input to the battery control unit 7300 from a battery device including the secondary battery 7310. The battery control unit 7300 performs calculation processing using these signals to control the temperature adjustment of the secondary battery 7310 or the cooling device provided in the battery device.

The outside-the-vehicle information detection unit 7400 detects information outside the vehicle equipped with the vehicle control system 7000. For example, at least one of the imaging unit 7410 and the outside-the-vehicle information detection unit 7420 is connected to the outside-the-vehicle information detection unit 7400. The imaging unit 7410 includes at least one of a Time Of Flight (ToF) camera, a stereo camera, a monocular camera, an infrared camera, and other cameras. The outside-of-vehicle information detection unit 7420 includes, for example, an environmental sensor for detecting the current weather or weather, or an ambient information detection for detecting other vehicles, obstacles, pedestrians, etc. around the vehicle equipped with the vehicle control system 7000. At least one of the sensors is included.

The environmental sensor may be at least one of, for example, a raindrop sensor that detects rain, a fog sensor that detects fog, a sunlight sensor that detects the degree of sunlight, and a snow sensor that detects snowfall. The surrounding information detection sensor may be at least one of an ultrasonic sensor, a radar device, and a LIDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging) device. These imaging units 7410 and outside-the-vehicle information detection units 7420 may be provided as independent sensors or devices, or may be provided as devices that integrate a plurality of sensors or devices.

Here, FIG. 21 shows an example of the installation positions of the imaging unit 7410 and the outside-the-vehicle information detection unit 7420. The imaging units 7910, 7912, 7914, 7916, and 7918 are, for example, provided at at least one of the front nose, side mirrors, rear bumper, back door, and upper part of the front glass of the vehicle interior of the vehicle 7900. . The imaging unit 7910 provided on the front nose and the imaging unit 7918 provided on the top of the windshield inside the vehicle mainly acquire images of the front of the vehicle 7900. The imaging units 7912 and 7914 provided in the side mirror mainly acquire images of the side of the vehicle 7900. The imaging unit 7916 provided on the rear bumper or back door mainly captures images of the rear of the vehicle 7900. The imaging unit 7918 provided on the top of the windshield inside the vehicle is mainly used to detect preceding vehicles, pedestrians, obstacles, signals, traffic signs, or lanes.

Additionally, FIG. 21 shows an example of the imaging range of each imaging unit 7910, 7912, 7914, and 7916. The imaging range a represents the imaging range of the imaging unit 7910 provided on the front nose, the imaging ranges b and c represent the imaging ranges of the imaging units 7912 and 7914 provided on the side mirrors, respectively, and the imaging range d represents the rear bumper or Indicates the imaging range of the imaging unit 7916 provided in the back door. For example, by overlapping image data captured by the imaging units 7910, 7912, 7914, and 7916, a bird's-eye view of the vehicle 7900 is obtained as seen from above.

The out-of-vehicle information detection units 7920, 7922, 7924, 7926, 7928, and 7930 provided at the front, rear, sides, and corners of the vehicle 7900 and on the top of the windshield inside the vehicle are, for example, ultrasonic sensors or radar devices. do. The outside-the-vehicle information detection units 7920, 7926, and 7930 provided on the front nose, rear bumper, back door, and upper part of the front glass of the vehicle 7900 may be, for example, LIDAR devices. These out-of-vehicle information detection units 7920 to 7930 are mainly used to detect preceding vehicles, pedestrians, or obstacles.

The explanation continues by returning to Figure 20. The outside-the-vehicle information detection unit 7400 causes the imaging unit 7410 to capture an image outside the vehicle and receives the captured image data. Additionally, the outside-the-vehicle information detection unit 7400 receives detection information from the connected outside-the-vehicle information detection unit 7420. When the outside-the-vehicle information detection unit 7420 is an ultrasonic sensor, a radar device, or a LIDAR device, the outside-the-vehicle information detection unit 7400 transmits ultrasonic waves or electromagnetic waves and receives information on the received reflected wave. The outside-the-vehicle information detection unit 7400 may perform distance detection processing or object detection processing such as people, cars, obstacles, signs, or letters on the road, based on the received information. The outside-the-vehicle information detection unit 7400 may perform environmental recognition processing to recognize rain, fog, or road surface conditions, etc. based on the received information. The outside-the-vehicle information detection unit 7400 may calculate the distance to the object outside the vehicle based on the received information.

Additionally, the outside-the-vehicle information detection unit 7400 may perform image recognition processing or distance detection processing to recognize people, cars, obstacles, signs, or characters on the road, based on the received image data. The outside-the-vehicle information detection unit 7400 performs processing such as distortion correction or position alignment on the received image data, and synthesizes image data captured by other imaging units 7410 to generate a bird's eye view image or a panoramic image. You can do it. The outside-the-vehicle information detection unit 7400 may perform viewpoint conversion processing using image data captured by another imaging unit 7410.

The in-vehicle information detection unit 7500 detects information in the vehicle. The in-vehicle information detection unit 7500 is connected to, for example, a driver state detection unit 7510 that detects the driver's state. The driver status detection unit 7510 may include a camera that captures images of the driver, a biometric sensor that detects the driver's biometric information, or a microphone that collects voice from inside the vehicle. The biometric sensor is provided, for example, on a seat surface or a steering wheel, and detects biometric information of a passenger sitting on the seat or a driver holding the steering wheel. The in-vehicle information detection unit 7500 may calculate the driver's degree of fatigue or concentration based on the detection information input from the driver state detection unit 7510, or may determine whether the driver is drowsy. The in-vehicle information detection unit 7500 may perform processing such as noise canceling processing on the collected voice signal.

The integrated control unit 7600 controls overall operations within the vehicle control system 7000 according to various programs. An input unit 7800 is connected to the integrated control unit 7600. The input unit 7800 is realized by a device that can be input and operated by the occupant, such as a touch panel, button, microphone, switch, or lever. Data obtained by voice recognition of a voice input through a microphone may be input to the integrated control unit 7600. The input unit 7800 may be, for example, a remote control device using infrared or other radio waves, or may be an external connection device such as a mobile phone or PDA (Personal Digital Assistant) that corresponds to the operation of the vehicle control system 7000. The input unit 7800 may be, for example, a camera, in which case the passenger can input information through gestures. Alternatively, data obtained by detecting the movement of a wearable device worn by the passenger may be input. In addition, the input unit 7800 may include, for example, an input control circuit that generates an input signal based on information input by a passenger, etc. using the input unit 7800 and outputs it from the integrated control unit 7600. do. By manipulating the input unit 7800, the passenger or the like inputs various data or instructs processing operations to the vehicle control system 7000.

The storage unit 7690 may include a ROM (Read Only Memory) that stores various programs executed by a microcomputer, and a RAM (Random Access Memory) that stores various parameters, calculation results, sensor values, etc. Additionally, the storage unit 7690 may be realized by a magnetic storage device such as a hard disk drive (HDD), a semiconductor storage device, an optical storage device, or a magneto-optical storage device.

The general-purpose communication I/F 7620 is a general-purpose communication I/F that mediates communication between various devices existing in the external environment 7750. The universal communication I/F (7620) is a cellular communication device such as GSM (registered trademark) (Global System of Mobile communications), WiMAX (registered trademark), LTE (registered trademark) (Long Term Evolution), or LTE-A (LTE-Advanced). Communication protocols or other wireless communication protocols such as wireless LAN (also known as Wi-Fi (registered trademark)) and Bluetooth (registered trademark) may be implemented. The general communication I/F 7620 is a device (e.g., an application server or You can also connect to the control server. In addition, the general communication I/F 7620 uses, for example, P2P (Peer To Peer) technology to connect terminals (e.g., drivers, pedestrians, or store terminals, or MTC (Machine You can also connect to a (Type Communication) terminal.

The dedicated communication I/F 7630 is a communication I/F that supports a communication protocol designed for use in vehicles. The dedicated communication I/F 7630 is, for example, a wireless access in vehicle environment (WAVE), a combination of IEEE802.11p in the lower layer and IEEE1609 in the upper layer, Dedicated Short Range Communications (DSRC), or a cellular communication protocol. Standard protocols may be implemented. The dedicated communication I/F (7630) typically uses vehicle-to-vehicle communication, vehicle-to-infrastructure communication, vehicle-to-home communication, and vehicle-to-pedestrian communication. Performs V2X communication, a concept that includes one or more of the following.

The positioning unit 7640 performs positioning by receiving, for example, a GNSS signal from a GNSS (Global Navigation Satellite System) satellite (e.g., a GPS signal from a Global Positioning System (GPS) satellite), and determines the latitude of the vehicle. , generates location information including longitude and altitude. Additionally, the positioning unit 7640 may specify the current location by exchanging signals with a wireless access point, or may acquire location information from a terminal such as a mobile phone, PHS, or smartphone having a positioning function.

For example, the beacon receiver 7650 receives radio waves or electromagnetic waves transmitted from a wireless station installed on the road, and acquires information such as current location, traffic congestion, traffic restrictions, or required time. Additionally, the function of the beacon receiver 7650 may be included in the dedicated communication I/F 7630 described above.

The in-vehicle device I/F 7660 is a communication interface that mediates the connection between the microcomputer 7610 and various in-vehicle devices 7760 existing in the car. The in-vehicle device I/F 7660 may establish a wireless connection using a wireless communication protocol such as wireless LAN, Bluetooth (registered trademark), NFC (Near Field Communication), or WUSB (Wireless USB). In addition, the in-vehicle device I/F (7660) is connected to USB (Universal Serial Bus), HDMI (registered trademark) (High-Definition Multimedia Interface, or MHL (Mobile High-Definition A wired connection such as a definition link may be established. The in-vehicle device 7760 may include at least one of, for example, a mobile device or wearable device owned by the passenger, or an information device carried or installed in the vehicle. Additionally, the in-vehicle device 7760 may include a navigation device that searches for a route to an arbitrary destination.The in-vehicle device I/F 7660 exchanges control signals or data signals between these in-vehicle devices 7760. .

The vehicle-mounted network I/F (7680) is an interface that mediates communication between the microcomputer (7610) and the communication network (7010). The vehicle-mounted network I/F 7680 transmits and receives signals, etc. based on a predetermined protocol supported by the communication network 7010.

The microcomputer 7610 of the integrated control unit 7600 includes a general-purpose communication I/F 7620, a dedicated communication I/F 7630, a positioning unit 7640, a beacon receiver 7650, and an in-vehicle device I/F ( Based on information acquired through at least one of the vehicle control system 7660 and the vehicle-mounted network I/F 7680, the vehicle control system 7000 is controlled according to various programs. For example, the microcomputer 7610 calculates control target values for the driving force generator, steering mechanism, or braking device based on the acquired information inside and outside the vehicle, and outputs a control command to the drive system control unit 7100. do. For example, the microcomputer 7610 may provide advanced driver assistance (ADAS), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, vehicle speed maintenance driving, vehicle collision warning, or vehicle lane departure warning. Cooperative control may be performed for the purpose of realizing the function of the system. In addition, the microcomputer 7610 controls the driving force generator, steering mechanism, braking device, etc. based on the acquired surrounding information of the vehicle, thereby providing cooperative control for the purpose of autonomous driving without following the driver's operations. You may do this.

The microcomputer (7610) includes a general-purpose communication I/F (7620), a dedicated communication I/F (7630), a positioning unit (7640), a beacon receiver (7650), an in-vehicle device I/F (7660), and a vehicle-mounted network I/F. Based on information acquired through at least one of F (7680), 3D distance information is generated between the vehicle and objects such as surrounding structures or people, and local map information including surrounding information of the current location of the vehicle is generated. You may write it. Additionally, based on the acquired information, the microcomputer 7610 may predict risks such as vehicle collision, proximity to pedestrians, etc., or entry into a road closed to traffic, and may generate a warning signal. The warning signal may be, for example, a signal for generating a warning sound or lighting a warning lamp.

The audio and video output unit 7670 transmits an output signal of at least one of audio and video to an output device capable of visually or audibly notifying information to occupants of the vehicle or outside the vehicle. In the example of FIG. 19, an audio speaker 7710, a display unit 7720, and an instrument panel 7730 are illustrated as output devices. The display unit 7720 may include, for example, at least one of an onboard display and a head-up display. The display unit 7720 may have an AR (Augmented Reality) display function. The output device may be another device other than these devices, such as headphones, a wearable device such as a glasses-type display worn by the passenger, a projector, or a lamp. When the output device is a display device, the display device visually displays results obtained by various processes performed by the microcomputer 7610 or information received from other control units in various formats such as text, images, tables, graphs, etc. do. Additionally, when the output device is a voice output device, the voice output device converts an audio signal consisting of reproduced voice data or sound data into an analog signal and audibly outputs it.

Additionally, in the example shown in FIG. 20, at least two control units connected via the communication network 7010 may be integrated as one control unit. Alternatively, each control unit may be comprised of a plurality of control units. Additionally, the vehicle control system 7000 may include other control units not shown. Additionally, in the above description, some or all of the functions handled by one control unit may be assigned to another control unit. In other words, as long as information is transmitted and received through the communication network 7010, predetermined calculation processing may be performed in any control unit. Similarly, a sensor or device connected to one control unit may be connected to another control unit, and a plurality of control units may transmit and receive detection information to each other through the communication network 7010.

Additionally, any of the imaging devices of the first to tenth embodiments can be used as the imaging unit 7410 shown in FIG. 20 or the imaging units 7910 to 7916 shown in FIG. 21.

Although embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the technical scope of the present disclosure is not limited to these examples. It is obvious to those skilled in the art of the present disclosure that various changes or modifications can be made within the scope of the technical idea described in the claims. These are naturally understood to fall within the technical scope of the present disclosure.

In addition, the effects described in this specification are illustrative or illustrative only and are not limited. In other words, the technology related to the present disclosure can exert other effects that are apparent to those skilled in the art from the description of this specification, in addition to or instead of the above effects.

Additionally, the following configurations also fall within the technical scope of the present disclosure.

(1) a plurality of photoelectric conversion units provided for each pixel and each having a first end on the light incident side and a second end on an opposite side to the first end, and the second end along the boundaries of each of the plurality of photoelectric conversion units. A first member disposed in a first direction from the first end to the second end, and between each of the plurality of photoelectric conversion units and the first member and also on the first end side and having a refractive index greater than that of the photoelectric conversion unit. An imaging device having a second member comprising a low material.

(2) The imaging device according to (1), wherein the second member includes a conductor.

(3) The imaging device of (1), wherein the second member contains sealed air.

(4) The imaging device of (1), wherein the second member becomes thinner along the first direction.

(5) The imaging device according to (1), further comprising a semiconductor layer of a conductivity type different from that of the photoelectric conversion section in a region of the photoelectric conversion section other than where the second member is disposed.

(6) The second member extends along the first direction to the second end side and the sum of the thickness of the first member and the thickness of the second member along the first direction is uniform, (1 ) The imaging device of the substrate.

(7) The imaging device according to (6), wherein the thickness of the second member on the first end side is thinner than the thickness on the second end side.

(8) The plurality of photoelectric conversion units each have a first part and a second part, and the boundaries of the first part and the second part other than a portion of the central part are surrounded by the first member when viewed from the top. Also, the imaging device described in (1), which is in contact with the above portion.

(9) The plurality of photoelectric conversion units each have a substantially rectangular shape in plan view, and the second member has a thickness at a corner portion of the substantially rectangular portion that is thicker than a thickness at other portions. Imaging device.

(10) The imaging device according to any one of (1) to (9), wherein the thickness of the second member is 20 nm or more, and the length of the second member in the depth direction is 1000 nm or more.

(11) The imaging device according to any one of (1) to (10), wherein the second member is arranged to surround each of the plurality of photoelectric conversion units.

(12) The imaging device according to any one of (1) to (11), wherein the first member contains polysilicon.

(13) The imaging device according to any one of (1) to (12), further comprising a micro lens provided corresponding to each of the plurality of photoelectric conversion units.

(14) The imaging device according to (13), further comprising a color filter provided between each of the plurality of photoelectric conversion units and the micro lens.

(15) The imaging device according to any one of (1) to (12), wherein the plurality of photoelectric conversion units are divided into groups arranged in an array, and are further provided with micro lenses provided corresponding to each group.

(16) The imaging device according to any one of (1) to (15), further comprising a circuit disposed on the second end side and having a pixel transistor.

(17) The imaging device according to any one of (1) to (16), wherein the plurality of photoelectric conversion units each contain silicon, and the second member contains silicon oxide.

(18) comprising an imaging device and a signal processing unit that performs signal processing based on a pixel signal imaged by the imaging device, wherein the imaging device is provided for each pixel and each has a first end on the light incident side and the second end. A plurality of photoelectric conversion units having a second end opposite to the first end, and a first member disposed in a first direction from the first end to the second end along each boundary of the plurality of photoelectric conversion units; , An electronic device comprising a second member provided between each of the plurality of photoelectric conversion units and the first member and on a side of the first end and containing a material with a lower refractive index than the photoelectric conversion unit.

10a, 10b, 10c, 10d: pixel
12: photoelectric conversion layer,
12a, 12b, 12c, 12d: photoelectric conversion unit
13: Trench
14: conductor
15, 15a, 15c, 15d: Light absorption suppressor
16: Light blocking area between pixels,
17a, 17b: Color filter
18: micro lens
20: circuit
22: Laminated wiring section
24: Second step portion
26: first step portion
30: Silicon oxide
32: Polycrystalline silicon
34: fixed charge film
36: Oxide film
38: uneven structure
39: Low-index waveguide
400: mask
402: Area
410: Silicon oxide
420: fixed charge film
430: Oxide film
7000: Vehicle control system
7010: Telecommunications network
7100: Drivetrain control unit
7110: Vehicle status detection unit
7200: Body system control unit
7300: Battery control unit
7310: Secondary battery
7400: Out-of-vehicle information detection unit
7410: Imaging unit
7420: Information detection unit outside the car
7500: In-vehicle information detection unit
7510: Driver status detection unit
7600: Integrated control unit
7610: Microcomputer
7620: General purpose communication I/F
7630: Dedicated communication I/F
7640: Positioning unit
7650: Beacon receiver
7660: In-car device I/F
7670: Audio video output unit
7680: Vehicle-mounted network I/F
7690: memory unit
7710: Audio Speaker
7720: Display unit
7730: Instrument panel
7750: External environment
7760: In-car devices
7800: Input section
7900: Vehicle
7910 to 7916: imaging unit
7920 to 7930: Information detection unit outside the vehicle

Claims (18)

A plurality of photoelectric conversion units provided for each pixel, each having a first end on the light incident side and a second end on the side opposite to the first end,
a first member disposed in a first direction from the first end to the second end along each boundary of the plurality of photoelectric conversion units;
A second member provided between each of the plurality of photoelectric conversion units and the first member and on the side of the first end, and comprising a material having a lower refractive index than the photoelectric conversion unit.
An imaging device having a. The imaging device of claim 1, wherein the second member includes a conductor. The imaging device of claim 1, wherein the second member includes sealed air. The imaging device of claim 1, wherein the second member becomes thinner along the first direction. The imaging device according to claim 1, further comprising a semiconductor layer of a conductivity type different from that of the photoelectric conversion section in a region of the photoelectric conversion section other than where the second member is disposed. The method of claim 1, wherein the second member extends along the first direction to the second end side and the sum of the thickness of the first member and the thickness of the second member along the first direction is uniform. Imaging device. The imaging device according to claim 6, wherein the thickness of the second member on the first end side is thinner than the thickness on the second end side. The method according to claim 1, wherein the plurality of photoelectric conversion units each have a first part and a second part, and wherein the first part and the second part have a boundary other than a portion of the central portion when viewed from a planar surface on the first member. An imaging device surrounded by and adjacent to said portion. The imaging device according to claim 1, wherein each of the plurality of photoelectric conversion units has a substantially rectangular shape in plan view, and the second member has a thickness at corner portions of the substantially rectangular portion that is thicker than a thickness at other portions. . The imaging device according to claim 1, wherein the thickness of the second member is 20 nm or more, and the length of the second member in the depth direction is 1000 nm or more. The imaging device according to claim 1, wherein the second member is arranged to surround each of the plurality of photoelectric conversion units. The imaging device of claim 1, wherein the first member includes polysilicon. The imaging device according to claim 1, further comprising a micro lens provided to correspond to each of the plurality of photoelectric conversion units. The imaging device according to claim 13, further comprising a color filter provided between each of the plurality of photoelectric conversion units and the micro lens. The imaging device according to claim 1, wherein the plurality of photoelectric conversion units are divided into groups arranged in an array, and further include micro lenses provided corresponding to each group. The imaging device according to claim 1, further comprising a circuit disposed on the second end side and having a pixel transistor. The imaging device according to claim 1, wherein each of the plurality of photoelectric conversion units includes silicon, and the second member includes silicon oxide. an imaging device,
A signal processing unit that performs signal processing based on a pixel signal captured by the imaging device,
The imaging device,
A plurality of photoelectric conversion units provided for each pixel, each having a first end on the light incident side and a second end on the opposite side to the first end,
a first member disposed in a first direction from the first end to the second end along each boundary of the plurality of photoelectric conversion units;
A second member provided between each of the plurality of photoelectric conversion units and the first member and on the side of the first end, and comprising a material having a lower refractive index than the photoelectric conversion unit.
Equipped with an electronic device.

Images