KR20240021161A - 광 검출 장치, 광 검출 장치의 제조 방법 및 전자 기기 - Google Patents

광 검출 장치, 광 검출 장치의 제조 방법 및 전자 기기 Download PDF

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Publication number
KR20240021161A
KR20240021161A KR1020237041377A KR20237041377A KR20240021161A KR 20240021161 A KR20240021161 A KR 20240021161A KR 1020237041377 A KR1020237041377 A KR 1020237041377A KR 20237041377 A KR20237041377 A KR 20237041377A KR 20240021161 A KR20240021161 A KR 20240021161A
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South Korea
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conductor
semiconductor layer
insulating film
layer
wiring
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KR1020237041377A
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English (en)
Korean (ko)
Inventor
마사키 하네다
겐고 고토오
요시키 시라스
가즈키 시모무라
노부토시 후지이
다카아키 히라노
요스케 후지이
다카시 오이노우에
스구루 사이토
도시유키 이시마루
게이지 오시마
신이치 이마이
다쿠야 구로토리
도모히로 스기야마
이쿠에 미츠하시
겐이치 도쿠오카
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20240021161A publication Critical patent/KR20240021161A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H01L27/14636—
    • H01L27/14612—
    • H01L27/14645—
    • H01L27/14649—
    • H01L27/14687—
    • H01L27/14689—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
KR1020237041377A 2021-06-16 2022-06-16 광 검출 장치, 광 검출 장치의 제조 방법 및 전자 기기 Pending KR20240021161A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2021100118 2021-06-16
JPJP-P-2021-100118 2021-06-16
JP2021200445 2021-12-09
JPJP-P-2021-200445 2021-12-09
PCT/JP2022/024051 WO2022265059A1 (ja) 2021-06-16 2022-06-16 光検出装置、光検出装置の製造方法、及び電子機器

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KR20240021161A true KR20240021161A (ko) 2024-02-16

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Country Status (7)

Country Link
US (1) US20240290813A1 (https=)
EP (1) EP4358144A4 (https=)
JP (1) JPWO2022265059A1 (https=)
KR (1) KR20240021161A (https=)
DE (1) DE112022003066T5 (https=)
TW (1) TW202308144A (https=)
WO (1) WO2022265059A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12176364B2 (en) * 2021-12-27 2024-12-24 Omnivision Technologies, Inc. Passivation-enhanced image sensor and surface-passivation method
WO2025018144A1 (ja) * 2023-07-20 2025-01-23 ソニーセミコンダクタソリューションズ株式会社 撮像装置、半導体装置及び電子機器
WO2025089043A1 (ja) * 2023-10-26 2025-05-01 ソニーセミコンダクタソリューションズ株式会社 半導体装置
CN121816842A (zh) * 2023-10-31 2026-04-07 索尼半导体解决方案公司 光检测装置及电子设备
JP2025089933A (ja) * 2023-12-04 2025-06-16 キヤノン株式会社 半導体装置、半導体装置の製造方法、光電変換システムおよび移動体
US20250226278A1 (en) * 2024-01-10 2025-07-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof
WO2025197635A1 (ja) * 2024-03-22 2025-09-25 パナソニックＩｐマネジメント株式会社 撮像装置

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2011204915A (ja) 2010-03-25 2011-10-13 Sony Corp 半導体装置、半導体装置の製造方法、半導体装置の設計方法、及び電子機器
JP2014099582A (ja) 2012-10-18 2014-05-29 Sony Corp 固体撮像装置
JP2018190766A (ja) 2017-04-28 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス、製造方法、撮像素子、および電子機器

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JP2692625B2 (ja) * 1994-12-08 1997-12-17 日本電気株式会社 半導体基板の製造方法
JP5696081B2 (ja) * 2012-03-23 2015-04-08 株式会社東芝 固体撮像装置
JP2016058521A (ja) * 2014-09-09 2016-04-21 株式会社東芝 半導体装置およびその製造方法
WO2018110636A1 (en) * 2016-12-14 2018-06-21 Sony Semiconductor Solutions Corporation Solid-state imaging device and method for producing the same, and electronic device
JP7013209B2 (ja) * 2016-12-14 2022-01-31 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP6779825B2 (ja) * 2017-03-30 2020-11-04 キヤノン株式会社 半導体装置および機器
WO2018186197A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
JP6912922B2 (ja) * 2017-04-12 2021-08-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP7121499B2 (ja) * 2018-02-07 2022-08-18 株式会社岡本工作機械製作所 半導体装置の製造方法
JP7452962B2 (ja) * 2018-11-16 2024-03-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TWI850281B (zh) * 2018-12-27 2024-08-01 日商索尼半導體解決方案公司 半導體元件
JP7483324B2 (ja) * 2019-03-27 2024-05-15 キヤノン株式会社 半導体装置、光検出システム、発光システム、および移動体
JP2020182112A (ja) * 2019-04-25 2020-11-05 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP7384213B2 (ja) * 2019-09-30 2023-11-21 株式会社ニコン 撮像素子及び撮像装置

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2011204915A (ja) 2010-03-25 2011-10-13 Sony Corp 半導体装置、半導体装置の製造方法、半導体装置の設計方法、及び電子機器
JP2014099582A (ja) 2012-10-18 2014-05-29 Sony Corp 固体撮像装置
JP2018190766A (ja) 2017-04-28 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス、製造方法、撮像素子、および電子機器

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EP4358144A4 (en) 2025-03-19
TW202308144A (zh) 2023-02-16
EP4358144A1 (en) 2024-04-24
DE112022003066T5 (de) 2024-03-28
JPWO2022265059A1 (https=) 2022-12-22
US20240290813A1 (en) 2024-08-29
WO2022265059A1 (ja) 2022-12-22

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