DE112022003066T5 - Optische detektionsvorrichtung, herstellungsverfahren für eine optische detektionsvorrichtung und elektronische einrichtung - Google Patents

Optische detektionsvorrichtung, herstellungsverfahren für eine optische detektionsvorrichtung und elektronische einrichtung Download PDF

Info

Publication number
DE112022003066T5
DE112022003066T5 DE112022003066.6T DE112022003066T DE112022003066T5 DE 112022003066 T5 DE112022003066 T5 DE 112022003066T5 DE 112022003066 T DE112022003066 T DE 112022003066T DE 112022003066 T5 DE112022003066 T5 DE 112022003066T5
Authority
DE
Germany
Prior art keywords
conductor
detection device
optical detection
semiconductor layer
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022003066.6T
Other languages
German (de)
English (en)
Inventor
Masaki HANEDA
Kengo Kotoo
Yoshiki Shirasu
Kazuki Shimomura
Nobutoshi Fujii
Takaaki Hirano
Yosuke Fujii
Takashi Qinoue
Suguru SAITO
Toshiyuki Ishimaru
Keiji Ohshima
Shinichi Imai
Takuya Kurotori
Tomohiro Sugiyama
Ikue Mitsuhashi
Kenichi Tokuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of DE112022003066T5 publication Critical patent/DE112022003066T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
DE112022003066.6T 2021-06-16 2022-06-16 Optische detektionsvorrichtung, herstellungsverfahren für eine optische detektionsvorrichtung und elektronische einrichtung Pending DE112022003066T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2021100118 2021-06-16
JP2021-100118 2021-06-16
JP2021-200445 2021-12-09
JP2021200445 2021-12-09
PCT/JP2022/024051 WO2022265059A1 (ja) 2021-06-16 2022-06-16 光検出装置、光検出装置の製造方法、及び電子機器

Publications (1)

Publication Number Publication Date
DE112022003066T5 true DE112022003066T5 (de) 2024-03-28

Family

ID=84527560

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022003066.6T Pending DE112022003066T5 (de) 2021-06-16 2022-06-16 Optische detektionsvorrichtung, herstellungsverfahren für eine optische detektionsvorrichtung und elektronische einrichtung

Country Status (7)

Country Link
US (1) US20240290813A1 (https=)
EP (1) EP4358144A4 (https=)
JP (1) JPWO2022265059A1 (https=)
KR (1) KR20240021161A (https=)
DE (1) DE112022003066T5 (https=)
TW (1) TW202308144A (https=)
WO (1) WO2022265059A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12176364B2 (en) * 2021-12-27 2024-12-24 Omnivision Technologies, Inc. Passivation-enhanced image sensor and surface-passivation method
WO2025018144A1 (ja) * 2023-07-20 2025-01-23 ソニーセミコンダクタソリューションズ株式会社 撮像装置、半導体装置及び電子機器
WO2025089043A1 (ja) * 2023-10-26 2025-05-01 ソニーセミコンダクタソリューションズ株式会社 半導体装置
CN121816842A (zh) * 2023-10-31 2026-04-07 索尼半导体解决方案公司 光检测装置及电子设备
JP2025089933A (ja) * 2023-12-04 2025-06-16 キヤノン株式会社 半導体装置、半導体装置の製造方法、光電変換システムおよび移動体
US20250226278A1 (en) * 2024-01-10 2025-07-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof
WO2025197635A1 (ja) * 2024-03-22 2025-09-25 パナソニックＩｐマネジメント株式会社 撮像装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204915A (ja) 2010-03-25 2011-10-13 Sony Corp 半導体装置、半導体装置の製造方法、半導体装置の設計方法、及び電子機器
JP2014099582A (ja) 2012-10-18 2014-05-29 Sony Corp 固体撮像装置
JP2018190766A (ja) 2017-04-28 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス、製造方法、撮像素子、および電子機器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2692625B2 (ja) * 1994-12-08 1997-12-17 日本電気株式会社 半導体基板の製造方法
JP5696081B2 (ja) * 2012-03-23 2015-04-08 株式会社東芝 固体撮像装置
JP2016058521A (ja) * 2014-09-09 2016-04-21 株式会社東芝 半導体装置およびその製造方法
WO2018110636A1 (en) * 2016-12-14 2018-06-21 Sony Semiconductor Solutions Corporation Solid-state imaging device and method for producing the same, and electronic device
JP7013209B2 (ja) * 2016-12-14 2022-01-31 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP6779825B2 (ja) * 2017-03-30 2020-11-04 キヤノン株式会社 半導体装置および機器
WO2018186197A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
JP6912922B2 (ja) * 2017-04-12 2021-08-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP7121499B2 (ja) * 2018-02-07 2022-08-18 株式会社岡本工作機械製作所 半導体装置の製造方法
JP7452962B2 (ja) * 2018-11-16 2024-03-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TWI850281B (zh) * 2018-12-27 2024-08-01 日商索尼半導體解決方案公司 半導體元件
JP7483324B2 (ja) * 2019-03-27 2024-05-15 キヤノン株式会社 半導体装置、光検出システム、発光システム、および移動体
JP2020182112A (ja) * 2019-04-25 2020-11-05 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP7384213B2 (ja) * 2019-09-30 2023-11-21 株式会社ニコン 撮像素子及び撮像装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204915A (ja) 2010-03-25 2011-10-13 Sony Corp 半導体装置、半導体装置の製造方法、半導体装置の設計方法、及び電子機器
JP2014099582A (ja) 2012-10-18 2014-05-29 Sony Corp 固体撮像装置
JP2018190766A (ja) 2017-04-28 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス、製造方法、撮像素子、および電子機器

Also Published As

Publication number Publication date
EP4358144A4 (en) 2025-03-19
TW202308144A (zh) 2023-02-16
KR20240021161A (ko) 2024-02-16
EP4358144A1 (en) 2024-04-24
JPWO2022265059A1 (https=) 2022-12-22
US20240290813A1 (en) 2024-08-29
WO2022265059A1 (ja) 2022-12-22

Similar Documents

Publication Publication Date Title
DE112022003066T5 (de) Optische detektionsvorrichtung, herstellungsverfahren für eine optische detektionsvorrichtung und elektronische einrichtung
KR102806487B1 (ko) 고체 촬상 장치
US12317612B2 (en) Semiconductor apparatus and method for manufacturing the same
JP7736670B2 (ja) 撮像装置及び電子機器
DE112018001862T5 (de) Festkörper-bildaufnahmevorrichtung und elektronisches gerät
DE112018006695T5 (de) Bildgebungselement
DE112019005424T5 (de) Festkörper-Bildgebungselement und Bildgebungsvorrichtung
DE112018001859T5 (de) Festkörper-Bildaufnahmevorrichtung und elektronisches Gerät
JP7721505B2 (ja) 撮像装置および電子機器
DE112017001519T5 (de) Bildaufnahmevorrichtung und elektronische Einrichtung
DE112019005071T5 (de) Halbleitervorrichtung und festkörperbildsensor
DE112018001842T5 (de) Festkörper-bildaufnahmevorrichtung und elektronisches gerät
DE112020003133T5 (de) Bildgebungsvorrichtung
DE112019003245T5 (de) Halbleitervorrichtung und verfahren zur herstellung einer halbleitervorrichtung
DE112021005467T5 (de) Bildgebungsvorrichtung und elektronische einrichtung
DE112022004422T5 (de) Lichtdetektionsvorrichtung, verfahren zum herstellen einer lichtdetektionsvorrichtung und elektronische ausrüstung
WO2020262501A1 (ja) 撮像装置
DE112020003071T5 (de) Festkörper-bildgebungsvorrichtung
DE112020003121T5 (de) Halbleitervorrichtung und bilderzeugungsvorrichtung
DE112018006764T5 (de) Halbleitervorrichtung
DE112022006406T5 (de) Bildgebungselement und verfahren zum herstellen eines bildgebungselements
DE112022001714T5 (de) Festkörperbildgebungsvorrichtung und verfahren zur herstellung einer festkörperbildgebungsvorrichtung
DE112022004086T5 (de) Lichtdetektionsvorrichtung und elektronische einrichtung
JP7802812B2 (ja) 撮像装置及び電子機器
CN117425963A (zh) 光检测装置、光检测装置的制造方法以及电子设备

Legal Events

Date Code Title Description
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0023522000

Ipc: H10W0020400000