JPWO2022265059A1 - - Google Patents
Info
- Publication number
- JPWO2022265059A1 JPWO2022265059A1 JP2023530393A JP2023530393A JPWO2022265059A1 JP WO2022265059 A1 JPWO2022265059 A1 JP WO2022265059A1 JP 2023530393 A JP2023530393 A JP 2023530393A JP 2023530393 A JP2023530393 A JP 2023530393A JP WO2022265059 A1 JPWO2022265059 A1 JP WO2022265059A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021100118 | 2021-06-16 | ||
| JP2021200445 | 2021-12-09 | ||
| PCT/JP2022/024051 WO2022265059A1 (ja) | 2021-06-16 | 2022-06-16 | 光検出装置、光検出装置の製造方法、及び電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022265059A1 true JPWO2022265059A1 (https=) | 2022-12-22 |
Family
ID=84527560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023530393A Pending JPWO2022265059A1 (https=) | 2021-06-16 | 2022-06-16 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20240290813A1 (https=) |
| EP (1) | EP4358144A4 (https=) |
| JP (1) | JPWO2022265059A1 (https=) |
| KR (1) | KR20240021161A (https=) |
| DE (1) | DE112022003066T5 (https=) |
| TW (1) | TW202308144A (https=) |
| WO (1) | WO2022265059A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12176364B2 (en) * | 2021-12-27 | 2024-12-24 | Omnivision Technologies, Inc. | Passivation-enhanced image sensor and surface-passivation method |
| WO2025018144A1 (ja) * | 2023-07-20 | 2025-01-23 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置、半導体装置及び電子機器 |
| WO2025089043A1 (ja) * | 2023-10-26 | 2025-05-01 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
| CN121816842A (zh) * | 2023-10-31 | 2026-04-07 | 索尼半导体解决方案公司 | 光检测装置及电子设备 |
| JP2025089933A (ja) * | 2023-12-04 | 2025-06-16 | キヤノン株式会社 | 半導体装置、半導体装置の製造方法、光電変換システムおよび移動体 |
| US20250226278A1 (en) * | 2024-01-10 | 2025-07-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and manufacturing method thereof |
| WO2025197635A1 (ja) * | 2024-03-22 | 2025-09-25 | パナソニックＩｐマネジメント株式会社 | 撮像装置 |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08162459A (ja) * | 1994-12-08 | 1996-06-21 | Nec Corp | 半導体基板及びその製造方法 |
| US20130248862A1 (en) * | 2012-03-23 | 2013-09-26 | Kabushiki Kaisha Toshiba | Solid-state image sensing device and camera |
| US20160071803A1 (en) * | 2014-09-09 | 2016-03-10 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| WO2018110636A1 (en) * | 2016-12-14 | 2018-06-21 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and method for producing the same, and electronic device |
| JP2018098495A (ja) * | 2016-12-14 | 2018-06-21 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| US20180286910A1 (en) * | 2017-03-30 | 2018-10-04 | Canon Kabushiki Kaisha | Semiconductor apparatus and equipment having laminated layers |
| WO2018189994A1 (en) * | 2017-04-12 | 2018-10-18 | Sony Semiconductor Solutions Corporation | Solid-state imaging device |
| WO2018198814A1 (ja) * | 2017-04-28 | 2018-11-01 | ソニーセミコンダクタソリューションズ株式会社 | 半導体デバイス、製造方法、撮像素子、および電子機器 |
| US20190244858A1 (en) * | 2018-02-07 | 2019-08-08 | Okamoto Machine Tool Works, Ltd. | Method of manufacturing semiconductor device |
| WO2020137283A1 (ja) * | 2018-12-27 | 2020-07-02 | ソニーセミコンダクタソリューションズ株式会社 | 半導体素子 |
| US20200312913A1 (en) * | 2019-03-27 | 2020-10-01 | Canon Kabushiki Kaisha | Semiconductor apparatus, photodetection system, light emitting system, and moving body |
| WO2020218503A1 (ja) * | 2019-04-25 | 2020-10-29 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| WO2021066069A1 (ja) * | 2019-09-30 | 2021-04-08 | 株式会社ニコン | 撮像素子及び撮像装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5853351B2 (ja) | 2010-03-25 | 2016-02-09 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及び電子機器 |
| JP2014099582A (ja) | 2012-10-18 | 2014-05-29 | Sony Corp | 固体撮像装置 |
| WO2018186197A1 (ja) * | 2017-04-04 | 2018-10-11 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、及び電子機器 |
| JP7452962B2 (ja) * | 2018-11-16 | 2024-03-19 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
-
2022
- 2022-06-16 TW TW111122457A patent/TW202308144A/zh unknown
- 2022-06-16 WO PCT/JP2022/024051 patent/WO2022265059A1/ja not_active Ceased
- 2022-06-16 JP JP2023530393A patent/JPWO2022265059A1/ja active Pending
- 2022-06-16 DE DE112022003066.6T patent/DE112022003066T5/de active Pending
- 2022-06-16 US US18/568,439 patent/US20240290813A1/en active Pending
- 2022-06-16 EP EP22825047.8A patent/EP4358144A4/en active Pending
- 2022-06-16 KR KR1020237041377A patent/KR20240021161A/ko active Pending
Patent Citations (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08162459A (ja) * | 1994-12-08 | 1996-06-21 | Nec Corp | 半導体基板及びその製造方法 |
| US20130248862A1 (en) * | 2012-03-23 | 2013-09-26 | Kabushiki Kaisha Toshiba | Solid-state image sensing device and camera |
| JP2013201188A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Corp | 固体撮像装置 |
| US20160071803A1 (en) * | 2014-09-09 | 2016-03-10 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| JP2016058521A (ja) * | 2014-09-09 | 2016-04-21 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JP2018098495A (ja) * | 2016-12-14 | 2018-06-21 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| US20190326345A1 (en) * | 2016-12-14 | 2019-10-24 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and method for producing the same, and electronic device |
| WO2018110636A1 (en) * | 2016-12-14 | 2018-06-21 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and method for producing the same, and electronic device |
| US20180286910A1 (en) * | 2017-03-30 | 2018-10-04 | Canon Kabushiki Kaisha | Semiconductor apparatus and equipment having laminated layers |
| JP2018170471A (ja) * | 2017-03-30 | 2018-11-01 | キヤノン株式会社 | 半導体装置および機器 |
| WO2018189994A1 (en) * | 2017-04-12 | 2018-10-18 | Sony Semiconductor Solutions Corporation | Solid-state imaging device |
| US20200035737A1 (en) * | 2017-04-12 | 2020-01-30 | Sony Semiconductor Solutions Corporation | Solid-state imaging device |
| JP2018182038A (ja) * | 2017-04-12 | 2018-11-15 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
| JP2018190766A (ja) * | 2017-04-28 | 2018-11-29 | ソニーセミコンダクタソリューションズ株式会社 | 半導体デバイス、製造方法、撮像素子、および電子機器 |
| US20210118937A1 (en) * | 2017-04-28 | 2021-04-22 | Sony Semiconductor Solutions Corporation | Semiconductor device, manufacturing method, imaging element, and electronic device |
| WO2018198814A1 (ja) * | 2017-04-28 | 2018-11-01 | ソニーセミコンダクタソリューションズ株式会社 | 半導体デバイス、製造方法、撮像素子、および電子機器 |
| US20190244858A1 (en) * | 2018-02-07 | 2019-08-08 | Okamoto Machine Tool Works, Ltd. | Method of manufacturing semiconductor device |
| JP2019140162A (ja) * | 2018-02-07 | 2019-08-22 | 株式会社岡本工作機械製作所 | 半導体装置の製造方法 |
| WO2020137283A1 (ja) * | 2018-12-27 | 2020-07-02 | ソニーセミコンダクタソリューションズ株式会社 | 半導体素子 |
| US20220052099A1 (en) * | 2018-12-27 | 2022-02-17 | C/O Sony Semiconductor Solutions Corporation | Semiconductor element |
| JP2020161717A (ja) * | 2019-03-27 | 2020-10-01 | キヤノン株式会社 | 半導体装置、光検出システム、発光システム、および移動体 |
| US20200312913A1 (en) * | 2019-03-27 | 2020-10-01 | Canon Kabushiki Kaisha | Semiconductor apparatus, photodetection system, light emitting system, and moving body |
| WO2020218503A1 (ja) * | 2019-04-25 | 2020-10-29 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| JP2020182112A (ja) * | 2019-04-25 | 2020-11-05 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| US20220208823A1 (en) * | 2019-04-25 | 2022-06-30 | Sony Semiconductor Solutions Corporation | Imaging device |
| WO2021066069A1 (ja) * | 2019-09-30 | 2021-04-08 | 株式会社ニコン | 撮像素子及び撮像装置 |
| US20220344400A1 (en) * | 2019-09-30 | 2022-10-27 | Nikon Corporation | Image capturing device and image capturing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4358144A4 (en) | 2025-03-19 |
| TW202308144A (zh) | 2023-02-16 |
| KR20240021161A (ko) | 2024-02-16 |
| EP4358144A1 (en) | 2024-04-24 |
| DE112022003066T5 (de) | 2024-03-28 |
| US20240290813A1 (en) | 2024-08-29 |
| WO2022265059A1 (ja) | 2022-12-22 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250508 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20260106 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20260305 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20260407 |