TW202308144A - 光檢測裝置、光檢測裝置之製造方法及電子機器 - Google Patents

光檢測裝置、光檢測裝置之製造方法及電子機器

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Publication number
TW202308144A
TW202308144A TW111122457A TW111122457A TW202308144A TW 202308144 A TW202308144 A TW 202308144A TW 111122457 A TW111122457 A TW 111122457A TW 111122457 A TW111122457 A TW 111122457A TW 202308144 A TW202308144 A TW 202308144A
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Taiwan
Prior art keywords
conductor
semiconductor layer
insulating film
layer
wiring
Prior art date
Application number
TW111122457A
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English (en)
Chinese (zh)
Inventor
羽根田雅希
琴尾健吾
白数佳紀
下村和輝
藤井宣年
平野嵩明
藤井洋輔
大井上昂志
齋藤卓
石丸敏之
大島啓示
今井慎一
黒鳥託也
杉山知広
三橋生枝
德岡賢一
Original Assignee
日商索尼半導體解決方案公司
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Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202308144A publication Critical patent/TW202308144A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
TW111122457A 2021-06-16 2022-06-16 光檢測裝置、光檢測裝置之製造方法及電子機器 TW202308144A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021100118 2021-06-16
JP2021-100118 2021-06-16
JP2021-200445 2021-12-09
JP2021200445 2021-12-09

Publications (1)

Publication Number Publication Date
TW202308144A true TW202308144A (zh) 2023-02-16

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Country Status (7)

Country Link
US (1) US20240290813A1 (https=)
EP (1) EP4358144A4 (https=)
JP (1) JPWO2022265059A1 (https=)
KR (1) KR20240021161A (https=)
DE (1) DE112022003066T5 (https=)
TW (1) TW202308144A (https=)
WO (1) WO2022265059A1 (https=)

Cited By (1)

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TWI881737B (zh) * 2024-01-10 2025-04-21 台灣積體電路製造股份有限公司 半導體結構及其製造方法

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US12176364B2 (en) * 2021-12-27 2024-12-24 Omnivision Technologies, Inc. Passivation-enhanced image sensor and surface-passivation method
WO2025018144A1 (ja) * 2023-07-20 2025-01-23 ソニーセミコンダクタソリューションズ株式会社 撮像装置、半導体装置及び電子機器
WO2025089043A1 (ja) * 2023-10-26 2025-05-01 ソニーセミコンダクタソリューションズ株式会社 半導体装置
CN121816842A (zh) * 2023-10-31 2026-04-07 索尼半导体解决方案公司 光检测装置及电子设备
JP2025089933A (ja) * 2023-12-04 2025-06-16 キヤノン株式会社 半導体装置、半導体装置の製造方法、光電変換システムおよび移動体
WO2025197635A1 (ja) * 2024-03-22 2025-09-25 パナソニックＩｐマネジメント株式会社 撮像装置

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JP2692625B2 (ja) * 1994-12-08 1997-12-17 日本電気株式会社 半導体基板の製造方法
JP5853351B2 (ja) 2010-03-25 2016-02-09 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
JP5696081B2 (ja) * 2012-03-23 2015-04-08 株式会社東芝 固体撮像装置
JP2014099582A (ja) 2012-10-18 2014-05-29 Sony Corp 固体撮像装置
JP2016058521A (ja) * 2014-09-09 2016-04-21 株式会社東芝 半導体装置およびその製造方法
WO2018110636A1 (en) * 2016-12-14 2018-06-21 Sony Semiconductor Solutions Corporation Solid-state imaging device and method for producing the same, and electronic device
JP7013209B2 (ja) * 2016-12-14 2022-01-31 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP6779825B2 (ja) * 2017-03-30 2020-11-04 キヤノン株式会社 半導体装置および機器
WO2018186197A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
JP6912922B2 (ja) * 2017-04-12 2021-08-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP2018190766A (ja) * 2017-04-28 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス、製造方法、撮像素子、および電子機器
JP7121499B2 (ja) * 2018-02-07 2022-08-18 株式会社岡本工作機械製作所 半導体装置の製造方法
JP7452962B2 (ja) * 2018-11-16 2024-03-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TWI850281B (zh) * 2018-12-27 2024-08-01 日商索尼半導體解決方案公司 半導體元件
JP7483324B2 (ja) * 2019-03-27 2024-05-15 キヤノン株式会社 半導体装置、光検出システム、発光システム、および移動体
JP2020182112A (ja) * 2019-04-25 2020-11-05 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP7384213B2 (ja) * 2019-09-30 2023-11-21 株式会社ニコン 撮像素子及び撮像装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI881737B (zh) * 2024-01-10 2025-04-21 台灣積體電路製造股份有限公司 半導體結構及其製造方法

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Publication number Publication date
EP4358144A4 (en) 2025-03-19
KR20240021161A (ko) 2024-02-16
EP4358144A1 (en) 2024-04-24
DE112022003066T5 (de) 2024-03-28
JPWO2022265059A1 (https=) 2022-12-22
US20240290813A1 (en) 2024-08-29
WO2022265059A1 (ja) 2022-12-22

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