KR20230134153A - 순환 플라즈마 에칭 공정 - Google Patents
순환 플라즈마 에칭 공정 Download PDFInfo
- Publication number
- KR20230134153A KR20230134153A KR1020237029039A KR20237029039A KR20230134153A KR 20230134153 A KR20230134153 A KR 20230134153A KR 1020237029039 A KR1020237029039 A KR 1020237029039A KR 20237029039 A KR20237029039 A KR 20237029039A KR 20230134153 A KR20230134153 A KR 20230134153A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- plasma
- silicon
- gas
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H01L21/31116—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H01L21/31138—
-
- H01L21/31144—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
- H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/162,623 US11527413B2 (en) | 2021-01-29 | 2021-01-29 | Cyclic plasma etch process |
| US17/162,623 | 2021-01-29 | ||
| PCT/US2022/013740 WO2022164820A1 (en) | 2021-01-29 | 2022-01-25 | Cyclic plasma etch process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20230134153A true KR20230134153A (ko) | 2023-09-20 |
Family
ID=82612863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237029039A Pending KR20230134153A (ko) | 2021-01-29 | 2022-01-25 | 순환 플라즈마 에칭 공정 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11527413B2 (https=) |
| JP (1) | JP7812045B2 (https=) |
| KR (1) | KR20230134153A (https=) |
| WO (1) | WO2022164820A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220293430A1 (en) * | 2021-03-12 | 2022-09-15 | Applied Materials, Inc. | Isotropic silicon nitride removal |
| JP7536941B2 (ja) | 2022-08-30 | 2024-08-20 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US20250046614A1 (en) * | 2023-07-31 | 2025-02-06 | Tokyo Electron Limited | SELECTIVE ATOMIC LAYER ETCH OF Si-BASED MATERIALS |
| US20250118557A1 (en) * | 2023-10-05 | 2025-04-10 | Applied Materials, Inc. | Selective hardmask etch for semiconductor processing |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6211092B1 (en) | 1998-07-09 | 2001-04-03 | Applied Materials, Inc. | Counterbore dielectric plasma etch process particularly useful for dual damascene |
| US7309659B1 (en) * | 2005-04-01 | 2007-12-18 | Advanced Micro Devices, Inc. | Silicon-containing resist to pattern organic low k-dielectrics |
| US20070243714A1 (en) * | 2006-04-18 | 2007-10-18 | Applied Materials, Inc. | Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step |
| TW201044462A (en) * | 2009-01-22 | 2010-12-16 | Tokyo Electron Ltd | A method for manufacturing semiconductor devices |
| US8980758B1 (en) | 2013-09-17 | 2015-03-17 | Applied Materials, Inc. | Methods for etching an etching stop layer utilizing a cyclical etching process |
| JP6267953B2 (ja) * | 2013-12-19 | 2018-01-24 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP6362488B2 (ja) | 2014-09-09 | 2018-07-25 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US9997373B2 (en) * | 2014-12-04 | 2018-06-12 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| JP6550278B2 (ja) * | 2015-06-24 | 2019-07-24 | 東京エレクトロン株式会社 | エッチング方法 |
| US10256076B2 (en) * | 2015-10-22 | 2019-04-09 | Applied Materials, Inc. | Substrate processing apparatus and methods |
| WO2017151383A1 (en) | 2016-02-29 | 2017-09-08 | Tokyo Electron Limited | Selective siarc removal |
| JP6784530B2 (ja) | 2016-03-29 | 2020-11-11 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| KR102362282B1 (ko) * | 2016-03-29 | 2022-02-11 | 도쿄엘렉트론가부시키가이샤 | 피처리체를 처리하는 방법 |
| KR20190088079A (ko) | 2016-12-16 | 2019-07-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 챔버 드리프팅 없이 고온 프로세싱을 가능하게 하는 방법 |
| US10269576B1 (en) * | 2017-11-15 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching and structures formed thereby |
| US11404245B2 (en) * | 2018-02-28 | 2022-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | DC bias in plasma process |
-
2021
- 2021-01-29 US US17/162,623 patent/US11527413B2/en active Active
-
2022
- 2022-01-25 WO PCT/US2022/013740 patent/WO2022164820A1/en not_active Ceased
- 2022-01-25 KR KR1020237029039A patent/KR20230134153A/ko active Pending
- 2022-01-25 JP JP2023545907A patent/JP7812045B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022164820A1 (en) | 2022-08-04 |
| US11527413B2 (en) | 2022-12-13 |
| JP2024506838A (ja) | 2024-02-15 |
| JP7812045B2 (ja) | 2026-02-09 |
| US20220246438A1 (en) | 2022-08-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| A201 | Request for examination | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
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| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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| D21 | Rejection of application intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
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| E13 | Pre-grant limitation requested |
Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
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| P11 | Amendment of application requested |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |