JP7812045B2 - 周期的プラズマエッチングプロセス - Google Patents

周期的プラズマエッチングプロセス

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Publication number
JP7812045B2
JP7812045B2 JP2023545907A JP2023545907A JP7812045B2 JP 7812045 B2 JP7812045 B2 JP 7812045B2 JP 2023545907 A JP2023545907 A JP 2023545907A JP 2023545907 A JP2023545907 A JP 2023545907A JP 7812045 B2 JP7812045 B2 JP 7812045B2
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JP
Japan
Prior art keywords
substrate
plasma
silicon
layer
cyclic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023545907A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024506838A (ja
JP2024506838A5 (https=
Inventor
ハン，ユン
ヴェンツェク，ピーター
ランジャン，アロック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2024506838A publication Critical patent/JP2024506838A/ja
Publication of JP2024506838A5 publication Critical patent/JP2024506838A5/ja
Application granted granted Critical
Publication of JP7812045B2 publication Critical patent/JP7812045B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2023545907A 2021-01-29 2022-01-25 周期的プラズマエッチングプロセス Active JP7812045B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/162,623 US11527413B2 (en) 2021-01-29 2021-01-29 Cyclic plasma etch process
US17/162,623 2021-01-29
PCT/US2022/013740 WO2022164820A1 (en) 2021-01-29 2022-01-25 Cyclic plasma etch process

Publications (3)

Publication Number Publication Date
JP2024506838A JP2024506838A (ja) 2024-02-15
JP2024506838A5 JP2024506838A5 (https=) 2025-01-28
JP7812045B2 true JP7812045B2 (ja) 2026-02-09

Family

ID=82612863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023545907A Active JP7812045B2 (ja) 2021-01-29 2022-01-25 周期的プラズマエッチングプロセス

Country Status (4)

Country Link
US (1) US11527413B2 (https=)
JP (1) JP7812045B2 (https=)
KR (1) KR20230134153A (https=)
WO (1) WO2022164820A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220293430A1 (en) * 2021-03-12 2022-09-15 Applied Materials, Inc. Isotropic silicon nitride removal
JP7536941B2 (ja) 2022-08-30 2024-08-20 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20250046614A1 (en) * 2023-07-31 2025-02-06 Tokyo Electron Limited SELECTIVE ATOMIC LAYER ETCH OF Si-BASED MATERIALS
US20250118557A1 (en) * 2023-10-05 2025-04-10 Applied Materials, Inc. Selective hardmask etch for semiconductor processing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015119099A (ja) 2013-12-19 2015-06-25 東京エレクトロン株式会社 半導体装置の製造方法
JP2016058548A (ja) 2014-09-09 2016-04-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2016532313A (ja) 2013-09-17 2016-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 周期的エッチング工程を用いたエッチング停止層のエッチング方法
JP2017183689A (ja) 2016-03-29 2017-10-05 東京エレクトロン株式会社 被処理体を処理する方法
JP2020502803A (ja) 2016-12-16 2020-01-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ チャンバドリフティングなしで高温処理を可能にする方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211092B1 (en) 1998-07-09 2001-04-03 Applied Materials, Inc. Counterbore dielectric plasma etch process particularly useful for dual damascene
US7309659B1 (en) * 2005-04-01 2007-12-18 Advanced Micro Devices, Inc. Silicon-containing resist to pattern organic low k-dielectrics
US20070243714A1 (en) * 2006-04-18 2007-10-18 Applied Materials, Inc. Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step
TW201044462A (en) * 2009-01-22 2010-12-16 Tokyo Electron Ltd A method for manufacturing semiconductor devices
US9997373B2 (en) * 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP6550278B2 (ja) * 2015-06-24 2019-07-24 東京エレクトロン株式会社 エッチング方法
US10256076B2 (en) * 2015-10-22 2019-04-09 Applied Materials, Inc. Substrate processing apparatus and methods
WO2017151383A1 (en) 2016-02-29 2017-09-08 Tokyo Electron Limited Selective siarc removal
KR102362282B1 (ko) * 2016-03-29 2022-02-11 도쿄엘렉트론가부시키가이샤 피처리체를 처리하는 방법
US10269576B1 (en) * 2017-11-15 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Etching and structures formed thereby
US11404245B2 (en) * 2018-02-28 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. DC bias in plasma process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016532313A (ja) 2013-09-17 2016-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 周期的エッチング工程を用いたエッチング停止層のエッチング方法
JP2015119099A (ja) 2013-12-19 2015-06-25 東京エレクトロン株式会社 半導体装置の製造方法
JP2016058548A (ja) 2014-09-09 2016-04-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2017183689A (ja) 2016-03-29 2017-10-05 東京エレクトロン株式会社 被処理体を処理する方法
JP2020502803A (ja) 2016-12-16 2020-01-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ チャンバドリフティングなしで高温処理を可能にする方法

Also Published As

Publication number Publication date
WO2022164820A1 (en) 2022-08-04
US11527413B2 (en) 2022-12-13
JP2024506838A (ja) 2024-02-15
KR20230134153A (ko) 2023-09-20
US20220246438A1 (en) 2022-08-04

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