JP2024506838A5 - - Google Patents

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Publication number
JP2024506838A5
JP2024506838A5 JP2023545907A JP2023545907A JP2024506838A5 JP 2024506838 A5 JP2024506838 A5 JP 2024506838A5 JP 2023545907 A JP2023545907 A JP 2023545907A JP 2023545907 A JP2023545907 A JP 2023545907A JP 2024506838 A5 JP2024506838 A5 JP 2024506838A5
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JP
Japan
Prior art keywords
substrate
plasma
silicon
gas mixture
etching process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2023545907A
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English (en)
Japanese (ja)
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JP2024506838A (ja
JP7812045B2 (ja
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Priority claimed from US17/162,623 external-priority patent/US11527413B2/en
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Publication of JP2024506838A publication Critical patent/JP2024506838A/ja
Publication of JP2024506838A5 publication Critical patent/JP2024506838A5/ja
Application granted granted Critical
Publication of JP7812045B2 publication Critical patent/JP7812045B2/ja
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JP2023545907A 2021-01-29 2022-01-25 周期的プラズマエッチングプロセス Active JP7812045B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/162,623 US11527413B2 (en) 2021-01-29 2021-01-29 Cyclic plasma etch process
US17/162,623 2021-01-29
PCT/US2022/013740 WO2022164820A1 (en) 2021-01-29 2022-01-25 Cyclic plasma etch process

Publications (3)

Publication Number Publication Date
JP2024506838A JP2024506838A (ja) 2024-02-15
JP2024506838A5 true JP2024506838A5 (https=) 2025-01-28
JP7812045B2 JP7812045B2 (ja) 2026-02-09

Family

ID=82612863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023545907A Active JP7812045B2 (ja) 2021-01-29 2022-01-25 周期的プラズマエッチングプロセス

Country Status (4)

Country Link
US (1) US11527413B2 (https=)
JP (1) JP7812045B2 (https=)
KR (1) KR20230134153A (https=)
WO (1) WO2022164820A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220293430A1 (en) * 2021-03-12 2022-09-15 Applied Materials, Inc. Isotropic silicon nitride removal
JP7536941B2 (ja) 2022-08-30 2024-08-20 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20250046614A1 (en) * 2023-07-31 2025-02-06 Tokyo Electron Limited SELECTIVE ATOMIC LAYER ETCH OF Si-BASED MATERIALS
US20250118557A1 (en) * 2023-10-05 2025-04-10 Applied Materials, Inc. Selective hardmask etch for semiconductor processing

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211092B1 (en) 1998-07-09 2001-04-03 Applied Materials, Inc. Counterbore dielectric plasma etch process particularly useful for dual damascene
US7309659B1 (en) * 2005-04-01 2007-12-18 Advanced Micro Devices, Inc. Silicon-containing resist to pattern organic low k-dielectrics
US20070243714A1 (en) * 2006-04-18 2007-10-18 Applied Materials, Inc. Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step
TW201044462A (en) * 2009-01-22 2010-12-16 Tokyo Electron Ltd A method for manufacturing semiconductor devices
US8980758B1 (en) 2013-09-17 2015-03-17 Applied Materials, Inc. Methods for etching an etching stop layer utilizing a cyclical etching process
JP6267953B2 (ja) * 2013-12-19 2018-01-24 東京エレクトロン株式会社 半導体装置の製造方法
JP6362488B2 (ja) 2014-09-09 2018-07-25 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9997373B2 (en) * 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP6550278B2 (ja) * 2015-06-24 2019-07-24 東京エレクトロン株式会社 エッチング方法
US10256076B2 (en) * 2015-10-22 2019-04-09 Applied Materials, Inc. Substrate processing apparatus and methods
WO2017151383A1 (en) 2016-02-29 2017-09-08 Tokyo Electron Limited Selective siarc removal
JP6784530B2 (ja) 2016-03-29 2020-11-11 東京エレクトロン株式会社 被処理体を処理する方法
KR102362282B1 (ko) * 2016-03-29 2022-02-11 도쿄엘렉트론가부시키가이샤 피처리체를 처리하는 방법
KR20190088079A (ko) 2016-12-16 2019-07-25 어플라이드 머티어리얼스, 인코포레이티드 챔버 드리프팅 없이 고온 프로세싱을 가능하게 하는 방법
US10269576B1 (en) * 2017-11-15 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Etching and structures formed thereby
US11404245B2 (en) * 2018-02-28 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. DC bias in plasma process

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