KR20220141270A - Flexible electroluminescent display device - Google Patents

Abstract

A flexible electroluminescent display device of the present specification includes: a flexible substrate including a display area and a non-display area outside the display area; a bending area disposed in the non-display area and including an area in which the flexible substrate is bent; a thin film transistor disposed on the display area and including a semiconductor layer, a gate electrode and source/drain electrodes; a storage capacitor disposed on the display area and including a storage upper electrode and a storage lower electrode; a light emitting element connected to the thin film transistor and disposed on the display area; and a first wire and a second wire disposed in the bending area. The gate electrode of the thin film transistor, the storage lower electrode and the first wire are formed on the same layer, and the storage upper electrode and the second wire are formed on the same layer. The defect can be minimized.

Description

FLEXIBLE ELECTROLUMINESCENT DISPLAY DEVICE

The present specification relates to a flexible electroluminescent display, and more particularly, to a flexible electroluminescent display capable of minimizing defects that may occur due to cracks in wiring while minimizing the bezel, which is a non-display area of the flexible electroluminescent display. it's about

As we enter the information age in earnest, the field of display devices that visually display electrical information signals is rapidly developing, and research to develop performance such as thinner, lighter, and lower power consumption for various display devices is continuing.

Representative display devices include a liquid crystal display device (LCD), a field emission display device (FED), an electro-wetting display device (EWD), and an organic light emitting display device (Organic). Light Emitting Display Device (OLED) and the like.

Among them, an electroluminescent display device, which is a display device including an organic light emitting display device, is a self-luminous display device, and unlike a liquid crystal display device, it does not require a separate light source, so it can be manufactured in a lightweight and thin form. In addition, the electroluminescent display device is not only advantageous in terms of power consumption due to low voltage driving, but also has excellent color realization, response speed, viewing angle, and contrast ratio (CR), and is expected to be utilized in various fields.

In the electroluminescent display device, an Emissive Layer (EML) using an organic material is disposed between two electrodes composed of an anode and a cathode. When holes from the anode are injected into the emission layer and electrons from the cathode are injected into the emission layer, the injected electrons and holes recombine with each other to form excitons in the emission layer and emit light.

The light emitting layer includes a host material and a dopant material, so that the two materials interact. The host generates excitons from electrons and holes and serves to transfer energy to the dopant, and the dopant is a dyed organic material added in a small amount, and serves to receive energy from the host and convert it into light.

As the display device is miniaturized, efforts are being made to reduce the bezel area, which is the outer portion of the active area (A/A), in order to increase the effective display screen size in the same area of the display device.

In general, since wiring and a driving circuit for driving a screen are disposed in a bezel area corresponding to a non-active area (N/A), there is a limit in reducing the bezel area.

A flexible electroluminescent display device that can maintain display performance even when bent by applying a flexible substrate made of a flexible material such as plastic, which has been recently developed, reduces the bezel area while securing area for wiring and driving circuits. In order to achieve this, a technology for reducing the bezel area by bending the non-display area of the flexible substrate has been developed and applied.

In addition, in an electroluminescent display device using a flexible substrate such as plastic, it is necessary to secure flexibility such as a substrate, various insulating layers disposed on the substrate, and wiring formed of a metal material.

In the case of wiring, when a substrate on which wiring is formed is bent, cracks may be generated in the wiring due to stress caused by bending. When a crack occurs in the wiring, normal signal transmission is not performed, so that the thin film transistor or the light emitting device does not operate normally, leading to a defect in the electroluminescent display device.

In the case of the insulating layer, since the inorganic or organic material itself constituting the insulating layer has a characteristic of brittleness, the insulating layer has considerably lower flexibility than a wiring formed of a metal. Accordingly, when the substrate on which the insulating layer is formed is bent, cracks may also occur in the insulating layer due to the tensile force caused by the bending.

A neutral plane (N/P) refers to a virtual plane that is not subjected to stress because compressive and tensile forces applied to the structure cancel each other when a structure is bent. When bending, the layer disposed on the upper surface with respect to the neutral plane is stretched to receive a tensile force, and the layer disposed on the lower surface is compressed and thus receives a compressive force. At this time, since the wiring or insulating layer is more vulnerable when subjected to tensile force among compressive and tensile forces of the same magnitude, it is very important to optimize the neutral plane in order to minimize the magnitude of the force even if it does not receive tensile force or receives tensile force. .

Accordingly, the inventors of the present specification have invented an electroluminescent display device having a novel structure capable of minimizing defects caused by cracks in wiring formed in a bent region of the electroluminescent display device.

In addition, the inventors of the present specification have recognized that the space to arrange wiring is insufficient as the resolution of the electroluminescent display device is gradually increased, and have developed an electroluminescent display device having a new structure in which wiring can be more freely arranged in a limited space. invented.

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

A flexible electroluminescent display device according to an embodiment of the present specification includes a flexible substrate including a display area and a non-display area outside the display area, and is disposed in the non-display area, and includes a bending area including an area in which the flexible substrate is bent, and a display area a thin film transistor disposed on the semiconductor layer, a gate electrode and a source/drain electrode, a storage capacitor disposed on a display area, the storage capacitor including a storage upper electrode and a storage lower electrode, a thin film transistor disposed on the display area and The connected light emitting device, the first wiring and the second wiring disposed in the bending region, and the gate electrode, the storage lower electrode, and the first wiring of the thin film transistor are configured in the same layer as each other, and the storage upper electrode and the second wiring are in the same layer is composed of

A flexible electroluminescent display device according to an embodiment of the present specification includes a flexible substrate including a display area and a non-display area outside the display area, a bending area including a bent area of the flexible substrate, and a flexible substrate disposed in the non-display area. a buffer layer disposed on the display area and the non-display area of A storage lower electrode composed of the same layer as the gate electrode of the transistor, a light emitting device disposed on the display area of the flexible substrate and connected to the thin film transistor, disposed on the buffer layer of the bending area of the flexible substrate, and on the same layer as the storage lower electrode The first wiring, the storage lower electrode, and an insulating layer disposed on the first wiring, the storage upper electrode overlapping the storage lower electrode, and a bending region of the flexible substrate are disposed on the insulating layer, the storage upper electrode and The flexible substrate includes an etched region adjacent to the first interconnection, and the second interconnection is disposed in the etched region, and the first interconnection and the second interconnection do not overlap each other. Adjacent to each other, the first wiring and the second wiring have a step difference.

A flexible electroluminescent display device according to an embodiment of the present specification includes the steps of: forming a flexible substrate including a display area and a non-display area outside the display area; and forming a buffer layer on the flexible substrate including the display area and the non-display area. Step, forming a thin film transistor including a semiconductor layer, a gate electrode and source/drain electrodes on a display area of a flexible substrate, forming a storage lower electrode and a storage upper electrode on a display area of the flexible substrate, flexible substrate forming a light emitting device connected to the thin film transistor on a display area of etching a region adjacent to the first wiring, forming a second wiring having the same layer as the storage upper electrode in the etched region of the flexible substrate, and bending a partial region of the non-display region of the flexible substrate to manufacture

The flexible electroluminescent display device according to the embodiment of the present specification has an effect of minimizing defects by preventing cracks that may be formed in the bending region by optimizing the structure of the bending region to the neutral plane.

The flexible electroluminescent display device according to the embodiment of the present specification has an effect that wiring used in the flexible electroluminescent display device can be more freely arranged within a limited space.

The flexible electroluminescent display device according to the embodiment of the present specification has an effect of minimizing the bezel, which is a non-display area of the flexible electroluminescent display device.

Effects of the flexible electroluminescent display device according to the embodiment of the present specification are not limited by the contents exemplified above, and more various effects are included in the present specification.

Since the contents of the specification described in the problems to be solved above, the means for solving the problems, and the effects do not specify the essential characteristics of the claims, the scope of the claims is not limited by the matters described in the contents of the specification.

1 is a block diagram of an electroluminescent display device according to an embodiment of the present specification.
2 is a circuit diagram of a pixel included in an electroluminescent display device according to an embodiment of the present specification.
3 is a plan view of an electroluminescent display device according to an embodiment of the present specification.
4 is a cross-sectional view of a flexible electroluminescent display device according to an embodiment of the present specification.
5A and 5B are cross-sectional views of a display area and a bending area of an electroluminescent display device according to an embodiment of the present specification.
6A to 6F are a manufacturing process of a first wiring and a second wiring of a bending region of a flexible electroluminescent display device according to an embodiment of the present specification.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative and the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless specifically stated otherwise.

In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between two parts unless 'directly' is used.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be

1 is a block diagram of an electroluminescent display device 100 according to an embodiment of the present specification.

Referring to FIG. 1 , the electroluminescent display device 100 includes an image processing unit 110 , a timing controller 120 , a data driver 130 , a gate driver 140 , and a display panel 150 .

The image processing unit 110 outputs a data enable signal DE along with the data signal DATA supplied from the outside. The image processing unit 110 may output one or more of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal in addition to the data enable signal DE.

The timing controller 120 receives the data signal DATA from the image processing unit 110 as well as a driving signal including a data enable signal DE or a vertical synchronization signal, a horizontal synchronization signal, and a clock signal. The timing controller 120 includes a gate timing control signal GDC for controlling the operation timing of the gate driver 140 and a data timing control signal DDC for controlling the operation timing of the data driver 130 based on the driving signal. to output

The data driver 130 samples and latches the data signal DATA supplied from the timing controller 120 in response to the data timing control signal DDC supplied from the timing controller 120 , and converts it into a gamma reference voltage and outputs it. . The data driver 130 outputs the data signal DATA through the data lines DL1 to DLn.

The gate driver 140 outputs the gate signal while shifting the level of the gate voltage in response to the gate timing control signal GDC supplied from the timing controller 120 . The gate driver 140 outputs a gate signal through the gate lines GL1 to GLm.

The display panel 150 displays an image while the pixel 160 emits light in response to the data signal DATA and the gate signal supplied from the data driver 130 and the gate driver 140 . A detailed structure of the pixel 160 will be described with reference to FIGS. 2 and 3 .

2 is a circuit diagram of a pixel included in an electroluminescent display device according to an embodiment of the present specification.

Referring to FIG. 2 , a pixel of the electroluminescent display device 200 includes a switching transistor 240 , a driving transistor 250 , a compensation circuit 260 , and a light emitting device 270 .

The light emitting device 270 operates to emit light according to a driving current formed by the driving transistor 250 .

The switching transistor 240 performs a switching operation so that the data signal supplied through the data line 230 is stored as a data voltage in the capacitor in response to the gate signal supplied through the gate line 220 .

The driving transistor 250 operates so that a constant driving current flows between the high potential power line VDD and the low potential power line GND in response to the data voltage stored in the capacitor.

The compensation circuit 260 is a circuit for compensating the threshold voltage of the driving transistor 350 , and the compensation circuit 260 includes one or more thin film transistors and a capacitor. The configuration of the compensation circuit may vary greatly depending on the compensation method.

In addition, the pixel of the electroluminescent display device 200 is composed of a 2T (Transistor) 1C (Capacitor) structure including a switching transistor 240 , a driving transistor 250 , a capacitor and a light emitting device 270 , but a compensation circuit ( 260) can be variously formed as 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, 7T2C, and the like.

3 is a plan view of an electroluminescent display device according to an embodiment of the present specification.

3 is a state in which the flexible substrate 310 of the flexible electroluminescent display 300 is not bent.

Referring to FIG. 3 , the flexible electroluminescent display 300 includes an active area (A/A) and a display in which pixels that actually emit light through a thin film transistor and a light emitting device are disposed on a flexible substrate 310 . A non-active area (N/A) surrounding an edge of the area A/A is included.

In the non-display area N/A of the flexible substrate 310 , a circuit such as a gate driver 390 for driving the flexible electroluminescence display 300 and various signals such as a scan line (S/L), etc. A wiring may be disposed. And, the circuit for driving the flexible electroluminescent display device 300 is disposed on the substrate 310 as a GIP (Gate in Panel), or a TCP (Tape Carrier Package) or COF (Chip on Film) method using a flexible substrate ( 310) may be connected.

A pad 395 is disposed on one side of the substrate 310 in the non-display area N/A. The pad 395 is a metal pattern to which an external module is bonded.

A portion of the non-display area N/A of the flexible substrate 310 may be bent in a bending direction as indicated by an arrow to form the bending area B/A. In the non-display area N/A of the flexible substrate 310 , wirings and driving circuits for driving the screen are disposed, and since an image is not displayed, there is no need to be visually recognized from the upper surface of the flexible substrate 310 . . Accordingly, by bending a portion of the non-display area N/A of the flexible substrate 310 , the bezel area can be reduced while securing an area for the wiring and the driving circuit.

Various wirings are formed on the flexible substrate 310 . The wiring may be formed in the display area A/A of the substrate 310 . Alternatively, the circuit wiring 370 formed in the non-display area N/A may transmit a signal by connecting a driving circuit, a gate driver, and a data driver.

The circuit wiring 370 may be formed of a conductive material, and may be formed of a conductive material having excellent ductility to reduce cracks from occurring when the substrate 310 is bent. For example, the circuit wiring 370 may be formed of a conductive material having excellent ductility, such as gold (Au), silver (Ag), or aluminum (Al), and various conductive materials used in the display area A/A. It may be formed of one of molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and an alloy of silver (Ag) and magnesium (Mg), etc. It may also consist of In addition, the circuit wiring 370 may be configured in a multi-layer structure including various conductive materials, for example, in a three-layer structure such as titanium (Ti)/aluminum (Al)/titanium (Ti). , but not limited thereto.

The circuit wiring 370 formed in the bending area B/A receives a tensile force when bent. For example, the circuit wiring 370 extending in the same direction as the bending direction (indicated by the arrow) on the flexible substrate 310 receives the greatest tensile force, and cracks may occur, and if the cracks are severe, disconnection may occur. have. Accordingly, rather than forming the circuit wiring 370 to extend in the bending direction, at least a portion of the circuit wiring 370 disposed including the bending region B/A extends in an oblique direction that is different from the bending direction. By forming, it is possible to minimize the tensile force to minimize the occurrence of cracks.

The circuit wiring 370 disposed including the bending region B/A may be formed in various shapes, for example, a trapezoidal wave shape, a triangular wave shape, a sawtooth wave shape, a sine wave shape, an omega (Ω) shape, a rhombus. It may be formed in various shapes, such as a shape.

The cross-sectional structure I-I' of the pixel included in the display area A/A and the cross-sectional structure II-II' of the wiring in the bending area N/A will be described in detail with reference to FIGS. 5A and 5B . .

4 is a cross-sectional view of a flexible electroluminescent display 400 according to an embodiment of the present specification.

Referring to FIG. 4 , a barrier film 420 is disposed on the flexible substrate 410 . The barrier film 420 is a component for protecting various components of the flexible electroluminescent display 400 , and may be disposed to correspond to at least the display area A/A of the flexible electroluminescent display 400 . In addition, the barrier film 420 may be made of a material having an adhesive property, and may serve to fix the polarizing plate 430 on the barrier film 420 .

A back plate 440 is disposed under the flexible substrate 410 . When the flexible substrate 410 is made of a plastic material such as polyimide, the flexible electroluminescent display device 400 manufacturing process proceeds in a situation where a support substrate made of glass is disposed under the flexible substrate 410, and the manufacturing process is After completion, the support substrate may be separated and released.

Since components for supporting the flexible substrate 410 are required even after the supporting substrate is released, a back plate 440 for supporting the flexible substrate 410 may be disposed under the flexible substrate 410 . The back plate 440 may be disposed adjacent to the bending area B/A in another area of the flexible substrate 410 except for the bending area B/A.

Backplate 440 may be made of a thin plastic film formed of polyimide, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), other suitable polymers, combinations of these polymers, or the like.

A support member 470 is disposed between the two backplates 440 , and the support member 470 may be adhered to the backplate 440 by an adhesive layer 460 . Support member 470 may be formed of a plastic material such as polycarbonate (PC), polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), other suitable polymers, combinations of these polymers, or the like. . The strength of the support member 470 formed of these plastic materials may be controlled by providing additives to increase the thickness and strength of the support member 470 . In addition, the support member 470 may be formed of glass, ceramic, metal, or other rigid materials or combinations of the aforementioned materials.

A micro coating layer 450 is disposed on the bending area B/A of the flexible substrate 410 . The micro coating layer 450 may be formed to cover one side of the barrier film 420 . In addition, since the micro-coating layer 450 may generate micro-cracks due to tensile force acting on the wiring portion disposed on the flexible substrate 410 during bending, the resin is coated at a bent position to a thin thickness. It can serve to protect the wiring.

An insulating film 480 is connected to an end of the flexible substrate 410 . Various wirings for transmitting signals to pixels disposed in the display area A/A are formed on the insulating film 480 . The insulating film 480 is formed of a material having flexibility so that it can be bent. A driving device may be mounted on the insulating film 480 , and a driving package such as a chip on film (COF) is formed together with the insulating film 480 , and formed on the insulating film 480 . It is connected to the wiring to provide a driving signal and data to the pixels disposed in the display area A/A.

The circuit board connected to the insulating film 480 may receive an image signal from the outside and apply various signals to the pixels disposed in the display area A/A, and may be a Printed Circuit Board (PCB). have.

5A and 5B are cross-sectional views of a display area and a bending area of an electroluminescent display device according to an embodiment of the present specification.

5A is a cross-sectional structure I-I' of a pixel included in the display area A/A described with reference to FIG. 3 .

Referring to FIG. 5A , the substrate 510 serves to support and protect the components of the electroluminescent display 500 disposed thereon, and recently may be made of a flexible material having a flexible characteristic. , the substrate 510 may be a flexible substrate. For example, the flexible substrate may be in the form of a film including one of the group consisting of a polyester-based polymer, a silicone-based polymer, an acrylic polymer, a polyolefin-based polymer, and a copolymer thereof.

For example, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polysilane (polysilane), polysiloxane (polysiloxane), polysilazane (polysilazane), polycarbosilane (polycarbosilane), polyacrylate (polyacrylate) ), polymethacrylate, polymethylacrylate, polymethylmethacrylate, polyethylacrylate, polyethylmethacrylate, cyclic olefin copolymer ( COC), cyclic olefin polymer (COP), polyethylene (PE), polypropylene (PP), polyimide (PI), polymethylmethacrylate (PMMA), polystyrene (PS), polyacetal (POM), polyether Ether ketone (PEEK), polyester sulfone (PES), polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polycarbonate (PC), polyvinylidene fluoride (PVDF), perfluoroalkyl polymers ( PFA), styrene-acrylnitrile copolymer (SAN), and may be composed of at least one of a combination thereof.

A buffer layer 512 is disposed on the flexible substrate 510 . The buffer layer 512 composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx) prevents penetration of moisture or other impurities through the substrate 510 and can planarize the surface of the substrate 510 . can The buffer layer 512 is not a necessary configuration and may be omitted depending on the type of the substrate 510 or the type of the thin film transistor disposed on the substrate 510 .

The thin film transistor 520 disposed on the buffer layer 512 includes a gate electrode 522 , a source electrode 524 , a drain electrode 526 , and a semiconductor layer 528 .

The semiconductor layer 528 has better mobility than amorphous silicon or amorphous silicon, so it has low energy consumption and excellent reliability. Polycrystalline silicon that can be applied to a driving thin film transistor in a pixel ), but is not limited thereto.

Recently, oxide semiconductors have been in the spotlight for their excellent mobility and uniformity. The oxide semiconductor is a quaternary metal oxide indium tin gallium zinc oxide (InSnGaZnO)-based material, a ternary metal oxide indium gallium zinc oxide (InGaZnO)-based material, indium tin zinc oxide (InSnZnO)-based material, indium aluminum zinc oxide (InAlZnO) ) based material, tin gallium zinc oxide (SnGaZnO) based material, aluminum gallium zinc oxide (AlGaZnO) based material, tin aluminum zinc oxide (SnAlZnO) based material, indium zinc oxide (InZnO) based material as binary metal oxide, tin zinc Oxide (SnZnO)-based material, aluminum zinc oxide (AlZnO)-based material, zinc magnesium oxide (ZnMgO)-based material, tin magnesium oxide (SnMgO)-based material, indium magnesium oxide (InMgO)-based material, indium gallium oxide (InGaO)-based material It may be composed of a material, an indium oxide (InO)-based material, a tin oxide (SnO)-based material, a zinc oxide (ZnO)-based material, and the like, and the composition ratio of each element is not limited.

The semiconductor layer 528 may include a source region including p-type or n-type impurities, a drain region, and a channel between the source region and the drain region. A lightly doped region may be included between the adjacent source and drain regions.

The first insulating layer 514 is an insulating layer composed of a single layer of silicon oxide (SiOx) or silicon nitride (SiNx) or multiple layers thereof, and the current flowing through the semiconductor layer 528 does not flow to the gate electrode 522 . placed so that In addition, silicon oxide has lower ductility than metal, but has excellent ductility compared to silicon nitride, and may be selectively formed as a single layer or a plurality of layers according to its characteristics.

In this case, when polysilicon is applied to the semiconductor layer 528 , the insulating layer disposed adjacent to the semiconductor layer 528 preferably forms an inorganic layer having a high hydrogen particle content. For example, when silicon nitride (SiNx) is disposed on a layer adjacent to the polysilicon semiconductor layer 528 and silicon oxide (SiOx) is disposed on a layer not adjacent to the polysilicon semiconductor layer 528, hydrogen particles are diffused into the polysilicon semiconductor layer 528. Since it is stabilized, deterioration of characteristics of the thin film transistor 520 can be prevented.

In addition, when the oxide semiconductor is applied to the semiconductor layer 528 , the insulating layer disposed adjacent to the semiconductor layer 528 preferably forms an inorganic layer having a low hydrogen content. For example, when silicon oxide (SiOx) is disposed on a layer adjacent to the oxide semiconductor layer 528 and silicon nitride (SiNx) is disposed on a layer not adjacent to the oxide semiconductor layer 528 , diffusion of hydrogen particles into the oxide semiconductor layer 528 is prevented. Accordingly, deterioration of the characteristics of the thin film transistor 520 may be prevented.

The gate electrode 522 serves as a switch for turning on or off the thin film transistor 520 based on an electrical signal transmitted from the outside through the gate line, and a conductive metal Phosphorus copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), etc. Or it may be composed of multiple layers, but is not limited thereto.

The source electrode 524 and the drain electrode 526 are connected to the data line so that an electric signal transmitted from the outside is transmitted from the thin film transistor 520 to the light emitting device 540 . The source electrode 524 and the drain electrode 526 are conductive metals copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and a metal material such as neodymium (Nd) or an alloy thereof may be configured as a single layer or multiple layers, but is not limited thereto.

A second insulating layer 516 and a third insulating layer 518 made of silicon oxide (SiOx) or silicon nitride (SiNx) to insulate the gate electrode 522, the source electrode 524, and the drain electrode 526 from each other. may be disposed between the gate electrode 522 and the source electrode 524 and the drain electrode 526 .

A storage lower electrode 532 made of the same layer as the gate electrode 522 is disposed on the first insulating layer 514 , and a storage upper electrode made of the same material as the gate electrode 522 is disposed on the second insulating layer 516 . The storage capacitor 530 is formed by arranging 534 to overlap with the storage lower electrode 532 .

As described with reference to FIG. 2 , the storage capacitor 530 may be formed and disposed in one pixel in various shapes. In addition, when the second insulating layer 516 is formed of silicon nitride (SiNx) having a higher dielectric constant than silicon oxide (SiOx), the capacitance value of the storage capacitor 530 increases.

A third insulating layer 518 including a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx) is disposed on the upper storage electrode 534 .

A passivation layer including an inorganic insulating layer such as silicon oxide (SiOx) or silicon nitride (SiNx) may be further disposed on the thin film transistor 520 . The passivation layer may serve to prevent unnecessary electrical connection between the upper and lower components of the passivation layer and to prevent contamination or damage from the outside, and the configuration of the thin film transistor 520 and the light emitting device 540 and Depending on the characteristics, it may be omitted.

The thin film transistor 520 may be classified into an inverted staggered structure and a coplanar structure according to positions of components constituting the thin film transistor 520 . In the thin film transistor of the inverted staggered structure, the gate electrode is positioned opposite the source electrode and the drain electrode with respect to the semiconductor layer. As shown in FIG. 5A , in the thin film transistor 520 having a coplanar structure, the gate electrode 522 is positioned on the same side as the source electrode 524 and the drain electrode 526 with respect to the semiconductor layer 528 .

Although the thin film transistor 520 having a coplanar structure is illustrated in FIG. 5A , the electroluminescent display device may include a thin film transistor having an inverted staggered structure.

For convenience of description, only the driving thin film transistor is illustrated among various thin film transistors that may be included in the electroluminescent display, but a switching thin film transistor, a capacitor, and the like may also be included in the electroluminescent display. And, when a signal is applied from the gate line to the switching thin film transistor, the signal from the data line is transferred to the gate electrode of the driving thin film transistor. The driving thin film transistor transmits a current transmitted through the power wiring to the anode according to a signal received from the switching thin film transistor, and controls light emission by the current transmitted to the anode.

Protects the thin film transistor 520 and alleviates a step difference caused by the thin film transistor 520 , and parasitic capacitance generated between the thin film transistor 520 and the gate line and data line and the light emitting devices 540 . A planarization layer 536 is disposed on the thin film transistor 520 to reduce -capacitance.

In addition, the planarization layer 536 may be formed of a plurality of layers according to the structure and characteristics of the electroluminescent display device 500 , and may include acrylic resin, epoxy resin, and phenolic resin. , Polyamides Resin, Polyimides Resin, Unsaturated Polyesters Resin, Polyphenylene Resin, Polyphenylenesulfides Resin, And it may be formed of one or more materials of benzocyclobutene (Benzocyclobutene), but is not limited thereto.

The light emitting device 540 disposed on the planarization layer 536 includes an anode 542 , a light emitting unit 544 , and a cathode 546 .

The anode 542 disposed on the planarization layer 536 may be made of indium tin oxide (ITO), indium zinc oxide (IZO), or the like, which are transparent conductive materials, but is not limited thereto. .

When the electroluminescent display device 500 is a top emission that emits light to an upper portion where the cathode 546 is disposed, the emitted light is reflected from the anode 542 and the cathode 546 is disposed more smoothly It may further include a reflective layer to be emitted in an upward direction.

For example, the anode 542 may have a two-layer structure in which a transparent conductive layer and a reflective layer made of a transparent conductive material are sequentially stacked, or a three-layer structure in which a transparent conductive layer, a reflective layer, and a transparent conductive layer are sequentially stacked, and the reflective layer is It may be silver (Ag) or an alloy containing silver.

The bank 538 disposed on the anode 542 and the planarization layer 536 may define a pixel capable of partitioning a region that actually emits light. After photoresist is formed on the anode 542 , a bank 538 is formed by photolithography. The photoresist refers to a photosensitive resin whose solubility in a developer is changed by the action of light, and a specific pattern can be obtained by exposing and developing the photoresist. The photoresist may be classified into a positive photoresist and a negative photoresist. The positive photoresist refers to a photoresist in which the solubility of the exposed portion in the developer is increased by exposure, and when the positive photoresist is developed, a pattern in which the exposed portion is removed is obtained. In addition, the negative photoresist refers to a photoresist whose solubility in the developer of the exposed portion is greatly reduced by exposure, and when the negative photoresist is developed, a pattern in which the unexposed portion is removed is obtained.

In order to form the light emitting part 544 of the light emitting device 540, a deposition mask, such as a fine metal mask (FMM), may be used. In addition, in order to prevent damage that may be caused by contact with the deposition mask disposed on the bank 538 and to maintain a constant distance between the bank 538 and the deposition mask, a transparent organic material is formed on the top of the bank 538 . A spacer (539) composed of one of mide, photoacryl and benzocyclobutene (BCB) may be disposed.

A light emitting unit 544 is disposed between the anode 542 and the cathode 546 . The light emitting unit 544 serves to emit light, and includes a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer, an electron transport layer (ETL), and an electron injection layer. (Electron Injection Layer; EIL) may include at least one layer, and some components of the light emitting unit 544 may be omitted depending on the structure or characteristics of the electroluminescent display device 500 . Here, as the light emitting layer, it is also possible to apply an organic light emitting layer and an inorganic light emitting layer.

The hole injection layer is disposed on the anode 542 to facilitate hole injection. The hole injection layer is, for example, HAT-CN (dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10.11-hexacarbonitrile), CuPc (phthalocyanine), and It may be formed of at least one of N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine (NPD).

The hole transport layer is disposed on the hole injection layer to smoothly transfer holes to the light emitting layer. The hole transport layer is, for example, NPD (N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine), TPD (N,N'-bis) -(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine), s-TAD(2,2',7,7'-tetrakis(N,N-dimethylamino)-9,9-spirofluorene) , and MTDATA (4,4',4"-Tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine).

The light emitting layer is disposed on the hole transport layer and includes a material capable of emitting light of a specific color to emit light of a specific color. In addition, the light emitting material may be formed using a phosphorescent material or a fluorescent material.

When the emission layer emits red light, the emission peak wavelength may be in the range of 600 nm to 650 nm, and CBP (4,4'-bis(carbazol-9-yl)biphenyl) or mCP(1,3) -bis(carbazol-9-yl)benzene) containing host material, PIQIr(acac)(bis(1-phenylisoquinoline)(acetylacetonate) iridium), PQIr(acac)(bis(1-phenylquinoline)(acetylacetonate) ) iridium), PQIr (tris(1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum). Alternatively, it may be made of a fluorescent material including PBD:Eu(DBM)3(Phen) or Perylene.

Here, the peak wavelength (λ refers to the maximum wavelength of EL (ElectroLuminescence). The wavelength at which the light emitting layers constituting the light emitting part emits their own light is called PL (Photo Luminescence), and the thickness of the layers constituting the light emitting layers or the effect of the optical properties The received light is called the emittance, in this case, the EL (ElectroLuminescence) refers to the light finally emitted by the electroluminescent display device, and can be expressed as the product of the PL (PhotoLuminescence) and the emittance.

When the emission layer emits green light, the emission peak wavelength may be in the range of 520 nm to 540 nm, and includes a host material including CBP or mCP, and Ir(ppy) ₃ (tris(2-phenylpyridine)iridium ) may be made of a phosphorescent material including a dopant material such as an Ir complex containing. In addition, it may be made of a fluorescent material including Alq ₃ (tris(8-hydroxyquinolino)aluminum).

When the emission layer emits blue light, the emission peak wavelength may be in the range of 440 nm to 480 nm, and includes a host material including CBP or mCP, and FIrPic(bis(3,5-difluoro-2) -(2-pyridyl)phenyl-(2-carboxypyridyl)iridium) may be made of a phosphorescent material including a dopant material, and spiro-DPVBi(4,4'-Bis(2,2-diphenyl-ethen) -1-yl)biphenyl), DSA (1-4-di-[4-(N,N-di-phenyl)amino]styryl-benzene), PFO (polyfluorene)-based polymer, or PPV (polyphenylenevinylene)-based polymer It may be made of a fluorescent material including one.

The electron transport layer is disposed on the light emitting layer to facilitate the movement of electrons to the light emitting layer. The electron transport layer is, for example, Liq (8-hydroxyquinolinolato-lithium), PBD (2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), TAZ (3- (4-biphenyl)4-phenyl-5-tert-butylphenyl-1,2,4-triazole), spiro-PBD, BCP (2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline) and BAlq (bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminum).

An electron injection layer may be further disposed on the electron transport layer. The electron injection layer is an organic layer that facilitates injection of electrons from the cathode 546 , and may be omitted depending on the structure and characteristics of the electroluminescence display 500 . The electron injection layer may be a metal inorganic compound such as BaF2, LiF, NaCl, CsF, Li2O, and BaO, and HAT-CN(dipyrazino[ _2,3 -f:2',3'-h]quinoxaline-2, 3,6,7,10.11-hexacarbonitrile), CuPc (phthalocyanine), and NPD (N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine) It may be any one or more organic compounds.

By further disposing an electron blocking layer or a hole blocking layer that blocks the flow of holes or electrons at a position adjacent to the light emitting layer, when electrons are injected into the light emitting layer, they move from the light emitting layer and pass through the adjacent hole transport layer Alternatively, when holes are injected into the light emitting layer, the light emitting efficiency can be improved by preventing the hole from moving in the light emitting layer and passing through the adjacent electron transport layer.

The cathode 546 is disposed on the light emitting unit 544 and serves to supply electrons to the light emitting unit 544 . Since the cathode 546 needs to supply electrons, it may be formed of a metal material such as magnesium (Mg), which is a conductive material having a low work function, or silver-magnesium (Ag:Mg), but is not limited thereto.

When the electroluminescent display device 500 is a top emission type, the cathode 546 is indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide ( It may be a transparent conductive oxide based on zinc oxide (ZnO) and tin oxide (TiO).

On the light emitting device 540 , the thin film transistor 520 and the light emitting device 540 , which are components of the electroluminescent display 500 , are encapsulated to prevent oxidation or damage due to moisture, oxygen, or impurities introduced from the outside. The part 550 may be disposed, and a plurality of encapsulation layers, a foreign material compensation layer, and a plurality of barrier films may be stacked to form the stack.

The encapsulation layer is disposed on the entire upper surface of the thin film transistor 520 and the light emitting device 540, and may be composed of one of inorganic silicon nitride (SiNx) or aluminum oxide (AlyOz), but is not limited thereto, and is disposed on the encapsulation layer An encapsulation layer may be further disposed on the foreign material compensation layer.

The foreign material compensation layer is disposed on the encapsulation layer, and an organic silicone oxycarbon (SiOC), acryl or epoxy-based resin may be used, but is not limited thereto, and may be generated during the process. When a defect occurs due to a crack generated by a foreign substance or particle, it can be compensated by being covered with a bending and foreign substance by the foreign material compensation layer.

By disposing a barrier film on the encapsulation layer and the foreign material compensation layer, the electroluminescent display device 500 may delay penetration of oxygen and moisture from the outside. The barrier film is configured in the form of a film having light-transmitting and double-sided adhesiveness, and may be composed of any one insulating material of olefin-based, acrylic-based, and silicone-based insulating materials, or COP (Cyclolefin). Polymer), COC (Cycloolefin Copolymer), and PC (Polycarbonate) may be further laminated with a barrier film composed of any one material, but is not limited thereto.

FIG. 5B is a cross-sectional structure II-II′ of the wiring of the bending region N/A described in FIG. 3 .

Some components of FIG. 5B are substantially the same as/similar to those described with reference to FIG. 5A, and detailed description thereof will be omitted.

The gate signal and data signal described with reference to FIGS. 1 to 3 are transmitted from the outside to the pixel disposed in the display area A/A through circuit wiring disposed in the non-display area N/A of the flexible electroluminescent display device. and make it glow.

When the wiring disposed in the non-display area N/A including the bending area B/A of the flexible electroluminescent display device 500 is formed in a single-layer structure, a large amount of space for disposing the wiring is required. After depositing the conductive material, the conductive material is patterned in the shape of the wiring to be formed by a process such as etching. Since there is a limit to the precision of the etching process, a lot of space is required due to the limit for narrowing the gap between the wires, Since the area of the non-display area N/A is increased, it may be difficult to minimize the bezel.

In addition, when a single wire is used to transmit one signal, the corresponding signal may not be transmitted when a crack occurs in the corresponding wire. In the process of bending the flexible substrate, cracks may occur in the wiring itself or cracks in other layers may be generated and the cracks may propagate to the wiring. As such, when a crack occurs in the wiring, the transmitted signal may not be transmitted.

Accordingly, the wiring disposed in the bending area B/A of the flexible electroluminescent display 500 according to the embodiment of the present specification is disposed in the form of a double wiring of the first wiring 562 and the second wiring 564 . do.

The first wiring 562 and the second wiring 564 may be formed of a conductive material, and may be formed of a conductive material having excellent ductility in order to reduce cracking when the flexible substrate 510 is bent.

The first wiring 562 may be formed of the same material on the same layer as the gate electrode 522 and the storage lower electrode 532 of the thin film transistor 520 described with reference to FIG. 5A .

In addition, the first wiring 562 is a conductive metal such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium ( Nd), etc., or an alloy thereof, may be composed of a single layer or multiple layers.

The buffer layer 512 and the second insulating layer 516 described with reference to FIG. 5A are disposed below and above the first wiring 562 , respectively. The buffer layer 512 and the second insulating layer 516 may prevent the first wiring 562 from being corroded by reacting with moisture, etc. It serves to facilitate the formation and arrangement of the second wiring 564 without causing a connection defect.

The second wiring 564 is disposed on the flexible substrate 510 . In this case, the second wiring 564 is disposed in a region that does not overlap with the first wiring 562 , and the side surface of the first wiring 562 and the second wiring ( 564) with a spacing of 1.0um or less between the sides.

The second wiring 564 may be formed of the same material on the same layer as the storage upper electrode 534 described with reference to FIG. 5A . The second wiring 564 is a conductive metal such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd). It may be composed of a single layer or multiple layers as an alloy thereof, or the like.

The region of the flexible substrate 510 on which the second wiring 564 is disposed is further etched to a predetermined thickness. Accordingly, a certain step is formed between the first wiring 562 and the second wiring 564 so that the upper surface of the second wiring 564 disposed on the etched region on the flexible substrate 510 is the first wiring ( 562) and do not come into contact with each other.

The step formed between the first wiring 562 and the second wiring 564 is the first even when a very short distance of 1.0 μm or less is placed between the side surface of the first wiring 562 and the side surface of the second wiring 564 . A defect in which the wiring 562 and the second wiring 564 are connected to each other does not occur.

As described above, the inventors of the present specification can minimize the separation distance between the first wiring 562 and the second wiring 564 , so that the space for arranging the wiring in the non-display area N/A can be efficiently utilized. , it is possible to minimize the bezel area of the electroluminescent display device 500 .

The first wiring 562 and the second wiring 564 formed in the bending area B/A receive a tensile force when bent. As described in FIG. 3 , the wiring extending in the same direction as the bending direction on the flexible substrate 510 receives the greatest tensile force, and cracks may occur. If the cracks are severe, disconnection may occur. Accordingly, rather than forming the wiring to extend in the bending direction, at least a portion of the wiring including the bending region B/A is formed to extend in an oblique direction that is different from the bending direction, thereby minimizing the tensile force and thus cracking. occurrence can be reduced. The shape of the wiring may be a rhombus shape, a triangular wave shape, a sinusoidal wave shape, a trapezoidal shape, or the like, but is not limited thereto.

The planarization layer 536 described with reference to FIG. 5A is disposed on the first wiring 562 and the second wiring 564 . The planarization layer 536 is an acrylic resin, an epoxy resin, a phenolic resin, a polyamides resin, a polyimides resin, an unsaturated polyester resin. (Unsaturated Polyesters Resin), polyphenylene-based resin (Polyphenylene Resin), polyphenylenesulfide-based resin (Polyphenylenesulfides Resin), and benzocyclobutene (Benzocyclobutene) may be formed of at least one material, but is not limited thereto.

The micro-coating layer 570 described with reference to FIG. 4 is disposed on the planarization layer 536 . Since the micro-coating layer 570 may generate micro-cracks due to the tensile force acting on the wiring portion disposed on the flexible substrate 510 during bending, a thin layer of resin is coated at the bending position to form the wiring. can play a protective role.

The neutral plane (N/P) refers to an imaginary plane that is not subjected to stress because compressive and tensile forces applied to the structure cancel each other when a structure is bent. When bending, the layer disposed on the upper surface with respect to the neutral plane is stretched to receive a tensile force, and the layer disposed on the lower surface is compressed and thus receives a compressive force.

In the insulating layer including the planarization layer 536, since the inorganic or organic material constituting the insulating layer itself has brittleness, the insulating layer has considerably lower flexibility than a wiring formed of a metal. Therefore, when the substrate on which the insulating layer is formed is bent, cracks may also occur in the insulating layer due to the tensile force caused by bending. It is very important to optimize the neutral plane in order to minimize the magnitude of the force even if it is received.

In the electroluminescent display device 500 according to the specification of the present invention, an area in which the first wiring 562 and the second wiring 564 are disposed is disposed adjacent to the flexible substrate 510, and a bending area B/A is formed. Only one planarization layer 536 may be formed and disposed thereon. When the neutral plane N/P is formed at a predetermined distance from the flexible substrate 510 , when a plurality of insulating layers or planarization layers are formed in the same wiring structure, the neutral plane N/P is an insulating layer or planarization layer Although it may be formed in a layer, in the bending area B/A of the electroluminescent display 500 according to the present specification, a neutral plane N/P of the same distance is formed in the micro-coating layer 570, The neutral plane N/P may not be formed in the planarization layer 536 .

In this way, the electroluminescence display device 500 according to the present specification can be generated in the wiring or the planarization layer 536 by the electroluminescence display device 500 having a new structure in which the neutral plane N/P can be optimized. cracks can be prevented.

The manufacturing process of the first wiring 562 and the second wiring 564 will be described with reference to FIGS. 6A to 6F .

6A to 6F are a manufacturing process of a first wiring and a second wiring of a bending region of a flexible electroluminescent display device according to an embodiment of the present specification.

The main components of the flexible electroluminescent display shown in FIGS. 6A to 6F may be substantially the same as or similar to the main components illustrated in FIGS. 1 to 5 .

Referring to FIG. 6A , a buffer layer 612 , a first wiring layer 662a , and a second insulating layer 616 are deposited and disposed on the flexible substrate 610 . In addition, the first wiring layer 662a may be formed of the same material as the gate electrode 522 and the storage lower electrode 532 of the thin film transistor 520 described with reference to FIG. 5A on the same layer.

Referring to FIG. 6B , a photoresist P/R is formed on the second insulating layer 616 according to the shape of the first wiring 662 , and dry etching is performed according to the shape of the first wiring 662 . Thus, a first wiring 662 is formed.

In this case, the flexible substrate 610 is further etched in the region adjacent to the first wiring 662 to provide 5000 between the lower surface of the first wiring 662 and the upper surface of the flexible substrate 610 in the region adjacent to the first wiring 662 . It should have a step difference of ~6000 Å.

Referring to FIG. 6C , a second wiring layer 664a and a photoresist P/R are sequentially deposited on the etched area of the flexible substrate 610 and the photoresist P/R. In addition, the second wiring layer 664a may be formed on the same layer as the storage upper electrode 534 described with reference to FIG. 5A and made of the same material.

Referring to FIG. 6D , the photoresist P/R formed on the second wiring layer 664a is subjected to an ashing process to form a second wiring 664 adjacent to the first wiring 662 . It should be formed only on the area to be arranged. In addition, the photoresist P/R is ashing until it reaches a thickness in contact with the buffer layer 612 in order to prevent a defect in which the first wiring 662 and the second wiring 664 are connected to each other when the manufacturing process is finished. proceed with the process.

6E and 6F , the exposed second wiring layer 664a is dry-etched to remove the metal layer on the photoresist P/R to form the second wiring 664 . Finally, the manufacturing process of forming and disposing the first wiring 662 and the second wiring 664 by removing the photoresist P/R disposed on the first wiring 662 is terminated, and the subsequent manufacturing process is performed. proceed

An electroluminescent display device according to an embodiment of the present specification is a mobile device, a video phone, a smart watch, a watch phone, a wearable device, a foldable device, a rollable device (rollable device), bendable device (bendable device), flexible device (flexible device), curved device (curved device), electronic notebook, e-book, PMP (portable multimedia player), PDA (personal digital assistant), MP3 player , mobile medical device, desktop PC, laptop PC, netbook computer, workstation, navigation, vehicle navigation, vehicle display, television, wallpaper display , a notebook computer, a monitor, a camera, a camcorder, and a home appliance. The flexible electroluminescent display device according to the embodiment of the present specification is

A flexible electroluminescent display device according to an embodiment of the present specification includes a flexible substrate including a display area and a non-display area outside the display area, and is disposed in the non-display area, and includes a bending area including an area in which the flexible substrate is bent, and a display area a thin film transistor disposed on the semiconductor layer, a gate electrode and a source/drain electrode, a storage capacitor disposed on a display area, the storage capacitor including a storage upper electrode and a storage lower electrode, a thin film transistor disposed on the display area and The connected light emitting device, the first wiring and the second wiring disposed in the bending region, and the gate electrode, the storage lower electrode, and the first wiring of the thin film transistor are configured in the same layer as each other, and the storage upper electrode and the second wiring are in the same layer is composed of

In the flexible electroluminescent display device according to the embodiment of the present specification, a buffer layer is further disposed on the flexible substrate, and the first wiring is disposed on the buffer layer.

The flexible substrate of the flexible electroluminescent display device according to the embodiment of the present specification includes an etched region adjacent to the first wiring, and the second wiring is disposed in the etched region.

The first wiring and the second wiring of the flexible electroluminescent display device according to the embodiment of the present specification have a step difference from each other, and the first wiring and the second wiring are not connected to each other.

The first wiring and the second wiring of the flexible electroluminescent display according to the embodiment of the present specification are disposed not to overlap each other.

The first wiring and the second wiring of the flexible electroluminescent display device according to the embodiment of the present specification have a separation distance of 1 μm or less.

The semiconductor layer of the thin film transistor of the flexible electroluminescent display according to the embodiment of the present specification includes a region doped with impurities.

The thin film transistor of the flexible electroluminescent display according to the embodiment of the present specification includes a region doped with one impurity among boron (B), aluminum (Al), gallium (Ga), and indium (In).

The thin film transistor of the flexible electroluminescent display according to the embodiment of the present specification includes a region doped with one impurity among phosphorus (P), arsenic (As), and antimony (Sb).

A flexible electroluminescent display device according to an embodiment of the present specification includes a flexible substrate including a display area and a non-display area outside the display area, a bending area including a bent area of the flexible substrate, and a flexible substrate disposed in the non-display area. a buffer layer disposed on the display area and the non-display area of A storage lower electrode composed of the same layer as the gate electrode of the transistor, a light emitting device disposed on the display area of the flexible substrate and connected to the thin film transistor, disposed on the buffer layer of the bending area of the flexible substrate, and on the same layer as the storage lower electrode The first wiring, the storage lower electrode, and an insulating layer disposed on the first wiring, the storage upper electrode overlapping the storage lower electrode, and a bending region of the flexible substrate are disposed on the insulating layer, the storage upper electrode and The flexible substrate includes an etched region adjacent to the first interconnection, and the second interconnection is disposed in the etched region, and the first interconnection and the second interconnection do not overlap each other. Adjacent to each other, the first wiring and the second wiring have a step difference.

The first wiring and the second wiring of the flexible electroluminescent display device according to the embodiment of the present specification have a separation distance of 1 μm or less.

The semiconductor layer of the thin film transistor of the flexible electroluminescent display according to the embodiment of the present specification includes a region doped with impurities.

The thin film transistor of the flexible electroluminescent display according to the embodiment of the present specification includes a region doped with one impurity among boron (B), aluminum (Al), gallium (Ga), and indium (In).

The thin film transistor of the flexible electroluminescent display according to the embodiment of the present specification includes a region doped with one impurity among phosphorus (P), arsenic (As), and antimony (Sb).

A flexible electroluminescent display device according to an embodiment of the present specification includes the steps of: forming a flexible substrate including a display area and a non-display area outside the display area; and forming a buffer layer on the flexible substrate including the display area and the non-display area. Step, forming a thin film transistor including a semiconductor layer, a gate electrode and source/drain electrodes on a display area of a flexible substrate, forming a storage lower electrode and a storage upper electrode on a display area of the flexible substrate, flexible substrate forming a light emitting device connected to the thin film transistor on a display area of etching a region adjacent to the first wiring, forming a second wiring having the same layer as the storage upper electrode in the etched region of the flexible substrate, and bending a partial region of the non-display region of the flexible substrate to manufacture

The first wiring and the second wiring of the flexible electroluminescent display device according to the embodiment of the present specification have a step difference with each other, and the first wiring and the second wiring are formed and manufactured so as not to be connected to each other.

The first wiring and the second wiring of the flexible electroluminescent display device according to the embodiment of the present specification are manufactured to have a separation distance of 1 μm or less.

It is manufactured, including the step of doping impurities in the semiconductor layer of the flexible electroluminescent display device according to the embodiment of the present specification.

The impurities of the flexible electroluminescent display according to the embodiment of the present specification are made of one of boron (B), aluminum (Al), gallium (Ga), and indium (In).

The impurities of the flexible electroluminescent display according to the embodiment of the present specification are made of one of phosphorus (P), arsenic (As), and antimony (Sb).

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed by the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100, 200, 300, 400, 500, 600: electroluminescent display device
110: image processing unit
120: timing controller
130: data driver
140: gate driver
150: display panel
160: pixel
220: gate line
230: data line
240: switching transistor
250: drive transistor
260: compensation circuit
270, 540: light emitting device
310, 410, 510, 610: substrate
320: circuit wiring
420: barrier film
430: polarizer
440: back plate
450, 570: micro coating layer
460: adhesive layer
470: support member
480: circuit board
512, 612: buffer layer
514: first insulating layer
516, 616: second insulating layer
518: third insulating layer
520: thin film transistor
522: gate electrode
524: source electrode
526: drain electrode
528: semiconductor layer
530: storage capacitor
532: storage lower electrode
534: storage upper electrode
536, 636: planarization layer
538: bank
539: spacer
542: anode
544: light emitting unit
546: cathode
550: encapsulation unit
562, 662: first wiring
564, 664: second wiring
662a: first wiring layer
664a: second wiring layer
A/A: Display area N/A: Non-display area
B/A: bending area N/P: neutral plane
P/R: photoresist

Claims (13)

a flexible substrate including a display area and a non-display area;
a bending area disposed in the non-display area and in which the flexible substrate is bent; and
and a first wiring and a second wiring disposed on different layers above the flexible substrate in the bending region and having a separation distance of 1.0 μm or less between side surfaces thereof. The method of claim 1,
a thin film transistor disposed on the flexible substrate of the display area and including a semiconductor layer, a gate electrode, and a source/drain electrode;
a storage capacitor disposed on the flexible substrate of the display area and including a storage upper electrode and a storage lower electrode; and
The flexible electroluminescent display device, which is disposed on the thin film transistor and further comprises a light emitting element connected to the thin film transistor. The method of claim 1,
and the first wiring and the second wiring are not connected to each other. The method of claim 1,
The first wiring and the second wiring do not overlap each other and are disposed adjacent to each other. 3. The method of claim 2,
The gate electrode, the storage lower electrode, and the first wiring of the thin film transistor are configured on the same layer as each other, a flexible electroluminescent display device. The method of claim 1,
a barrier film disposed on the flexible substrate of the display area; and
The flexible electroluminescent display device further comprising a micro-coating layer disposed to cover the first wiring and the second wiring in the bending region. 7. The method of claim 6,
The micro-coating layer extends to the display area and covers one side of the barrier film, a flexible electroluminescent display device. The method of claim 1,
The flexible substrate of the bending region includes a region etched to a partial thickness in a region adjacent to the first interconnection, and the second interconnection is disposed in the etched region of the flexible substrate. 9. The method of claim 8,
and the first wiring and the second wiring are not connected to each other due to a step difference. 9. The method of claim 8,
A flexible electroluminescent display having a step difference of 5000 Å-6000 Å between a lower surface of the first wiring and an upper surface of the etched flexible substrate in a region adjacent to the first wiring. The method of claim 1,
and at least a portion of the first wiring and the second wiring extends and is disposed in an oblique direction different from a bending direction of the flexible substrate. The method of claim 1,
and the first wiring and the second wiring are made of a conductive metal. The method of claim 1,
The first wiring and the second wiring are configured in a rhombic shape, a triangular wave shape, a sinusoidal wave shape, or a trapezoidal shape.

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