KR20190055450A - Flexible electroluminescent display device - Google Patents

Abstract

According to the present invention, a flexible electroluminescent display device comprises: a flexible substrate including a display region and a non-display region on the outer periphery of the display region; a bending region disposed on the non-display region and including a region where the flexible substrate is bent; a thin film transistor disposed on the display region and including a semiconductor layer, a gate electrode, and a source/drain electrode; a storage capacitor disposed on the display region and including a storage upper electrode and a storage lower electrode; a light emitting element disposed on the display region and connected to the thin film transistor; and a first wiring and a second wiring arranged in the bending region, wherein the gate electrode of the thin film transistor, the storage lower electrode, and the first wiring are formed of the same layer, and the storage upper electrode and the second wiring are formed of the same layer. Therefore, it is possible to optimize the structure of the bending region to a neutral plane to prevent cracks that may be formed in the bending region, thereby minimizing defects.

Description

TECHNICAL FIELD [0001] The present invention relates to a flexible electroluminescent display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flexible electroluminescence display device, and more particularly, to a flexible electroluminescence display device capable of minimizing defects that may be caused by wiring cracks while minimizing a bezel .

The field of displaying display devices is rapidly developing, and studies for developing performance such as thinning, lightening, and low power consumption for various display devices are continuing.

Typical display devices include a liquid crystal display device (LCD), a field emission display device (FED), an electro-wetting display device (EWD), and an organic light- Light Emitting Display Device (OLED), and the like.

In particular, an electroluminescent display device which is a display device including an organic light emitting display device is a self-luminous display device, and unlike a liquid crystal display device, a separate light source is not required, so that it can be manufactured in a light and thin shape. In addition, the electroluminescent display device is advantageous in terms of power consumption by low-voltage driving, and has excellent color implementation, response speed, viewing angle, and contrast ratio (CR), and is expected to be utilized in various fields.

An electroluminescent display device has an emissive layer (EML) using an organic material between two electrodes made of an anode and a cathode. When holes in the anode are injected into the light emitting layer and electrons in the cathode are injected into the light emitting layer, excited electrons and holes are recombined to form excitons in the light emitting layer.

A host material and a dopant material are included in the light emitting layer to cause interaction between the two materials. The host generates excitons from electrons and holes and transfers energy to the dopant. The dopant is a dye organic material to which a small amount of dopant is added, and receives energy from the host and converts the light into light.

As the display device has been miniaturized, efforts have been made to reduce the bezel area, which is the outer area of the active area (A / A), in order to increase the effective display screen size in the same area of the display device.

Generally, a bezel area corresponding to a non-active area (N / A) has a wiring and a driving circuit for driving the screen disposed therein.

Flexible electroluminescent display devices capable of maintaining display performance even when bent by applying a flexible substrate of a flexible material such as plastic, which is being developed recently, can reduce the area of the bezel while securing an area for wiring and a driving circuit A technique for reducing the bezel area by bending the non-display area of the flexible substrate has been developed and applied.

In an electroluminescence display device using a flexible substrate such as plastic, it is necessary to secure the flexibility of the substrate, the various insulating layers disposed on the substrate, and the wiring formed of a metal material.

In the case of wiring, cracking may occur in the wiring due to the stress due to bending when the substrate on which the wiring is formed is bent. If a crack is generated in the wiring, normal signal transmission is not performed, so that the thin film transistor or the light emitting element can not operate normally, leading to the failure of the electroluminescence display device.

In the case of the insulating layer, since the inorganic or organic material itself constituting the insulating layer has the property of brittleness, the insulating layer is significantly poor in flexibility as compared with the wiring formed of a metal. Therefore, when the substrate on which the insulating layer is formed is bent, a crack may be generated in the insulating layer due to tensile force due to bending.

Neutral Plane (N / P) means a virtual plane that is not stressed when a structure is bent and the compressive and tensile forces applied to the structure are canceled each other. When bent, the layer disposed on the upper surface with respect to the neutral plane is stretched to receive the tensile force, and the layer disposed on the lower surface is compressed, so that the layer is compressed. It is very important to optimize the neutral plane in order to minimize the magnitude of the force when the wire or insulation layer is not subjected to tensile force or tensile force because it is more susceptible to tensile force among the same compressive force and tensile force .

Accordingly, the inventors of the present invention have invented a new structure of an electroluminescent display device capable of minimizing defects caused by cracks in wiring lines formed in a bend region in an electroluminescent display device.

The inventors of the present invention have recognized that a space for arranging wiring is insufficient as the resolution of an electroluminescence display device increases, and realize a new structure of an electroluminescence display device capable of arranging wiring more freely in a limited space Invented.

The problems of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

A flexible electroluminescent display device according to an embodiment of the present invention includes a flexible substrate including a display region and a non-display region outside a display region, a bending region disposed in a non-display region, the bending region including a bend region of the flexible substrate, A storage capacitor including a storage upper electrode and a storage lower electrode, the storage capacitor being disposed on the display region, the storage capacitor being disposed on the display region, the thin film transistor being disposed on the display region, The first wiring and the second wiring arranged in the bending region and the gate electrode, the storage lower electrode and the first wiring of the thin film transistor are formed of the same layer, and the storage upper electrode and the second wiring are formed in the same layer .

A flexible electroluminescent display device according to an embodiment of the present invention includes a flexible substrate including a display area and a non-display area outside a display area, a bending area disposed in a non-display area, including a bend area of the flexible substrate, A thin film transistor arranged on the display region of the flexible substrate and including a semiconductor layer, a gate electrode, and a source / drain electrode, a thin film transistor arranged on the display region of the flexible substrate, A storage lower electrode formed of the same layer as the gate electrode of the transistor, a light emitting element disposed on the display region of the flexible substrate and connected to the thin film transistor, a buffer layer disposed on the buffer layer of the flexible substrate, An insulating layer disposed on the first wiring, the storage lower electrode, and the first wiring, And a second wiring arranged on a layer of the storage upper electrode and a storage upper electrode overlapping with the storage lower electrode and in the bending area of the flexible substrate and composed of the same layer as the storage upper electrode, Wherein the first wiring and the second wiring are adjacent to each other without overlapping each other, and the first wiring and the second wiring have a step difference.

A flexible electroluminescent display device according to an embodiment of the present invention includes a step of forming a flexible substrate including a display area and a non-display area outside the display area, a step of forming a buffer layer on a flexible substrate including a display area and a non- Forming a thin film transistor including a semiconductor layer, a gate electrode, and a source / drain electrode on a display region of the flexible substrate; forming a storage lower electrode and a storage upper electrode on a display region of the flexible substrate; Forming a first wiring composed of the same layer as the gate electrode on the buffer layer on the non-display region of the flexible substrate, forming a first wiring on the non-display region of the flexible substrate Etching an area adjacent to the first wiring, etching the area in the etched area of the flexible substrate Forming a second wiring composed of the same layer as the storage upper electrode, and bending a part of the non-display area of the flexible substrate.

The flexible electroluminescent display device according to the embodiment of the present invention has an effect of minimizing defects by optimizing the structure of the bending region to the neutral plane to prevent cracks that may be formed in the bending region.

The flexible electroluminescent display device according to the embodiment of the present invention has an effect that the wirings used in the flexible electroluminescent display device can be arranged more freely in a limited space.

The flexible electroluminescent display device according to the embodiment of the present invention has an effect of minimizing the bezel which is a non-display region of the flexible electroluminescent display device.

The effects of the flexible electroluminescent display device according to the embodiment of the present invention are not limited by the contents exemplified above, and more various effects are included in the specification.

The scope of the claims is not limited by the matters described in the description of the specification, as the contents of the description in the problems, the solutions to the problems, and the effects described above do not specify the essential features of the claims.

1 is a block diagram of an electroluminescent display device according to an embodiment of the present invention.
2 is a circuit diagram of a pixel included in an electroluminescent display device according to an embodiment of the present invention.
3 is a plan view of an electroluminescent display device according to an embodiment of the present invention.
4 is a cross-sectional view of a flexible electroluminescent display device according to an embodiment of the present invention.
5A and 5B are sectional views of a display region and a bending region of an electroluminescent display device according to an embodiment of the present invention.
Figs. 6A to 6F show a manufacturing process of the first wiring and the second wiring in the bending area of the flexible electroluminescence display device according to the embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Where the terms "comprises", "having", "done", and the like are used in this specification, other portions may be added unless "only" is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

1 is a block diagram of an electroluminescent display device 100 according to an embodiment of the present invention.

Referring to FIG. 1, an EL display device 100 includes an image processing unit 110, a timing controller 120, a data driver 130, a gate driver 140, and a display panel 150.

The image processing unit 110 outputs a data enable signal DE together with a data signal DATA supplied from the outside. The image processing unit 110 may output at least one of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal in addition to the data enable signal DE.

The timing controller 120 receives a data enable signal DE or a data signal DATA in addition to a drive signal including a vertical synchronization signal, a horizontal synchronization signal, and a clock signal from the image processing unit 110. The timing controller 120 generates a gate timing control signal GDC for controlling the operation timing of the gate driver 140 and a data timing control signal DDC for controlling the operation timing of the data driver 130 based on the drive signal. .

The data driver 130 samples and latches the data signal DATA supplied from the timing controller 120 in response to the data timing control signal DDC supplied from the timing controller 120 and converts the sampled data signal into a gamma reference voltage . The data driver 130 outputs the data signal DATA through the data lines DL1 to DLn.

The gate driver 140 outputs a gate signal while shifting the level of the gate voltage in response to the gate timing control signal GDC supplied from the timing controller 120. The gate driver 140 outputs the gate signal through the gate lines GL1 to GLm.

The display panel 150 displays an image while the pixel 160 emits light corresponding to the data signal DATA and the gate signal supplied from the data driver 130 and the gate driver 140. The detailed structure of the pixel 160 will be described in FIG. 2 and FIG.

2 is a circuit diagram of a pixel included in an electroluminescent display device according to an embodiment of the present invention.

2, a pixel of the EL display device 200 includes a switching transistor 240, a driving transistor 250, a compensation circuit 260, and a light emitting element 270.

The light emitting element 270 operates to emit light in accordance with the driving current generated by the driving transistor 250.

The switching transistor 240 performs a switching operation so that a data signal supplied through the data line 230 corresponding to the gate signal supplied through the gate line 220 is stored in the capacitor as a data voltage.

The driving transistor 250 operates so that a constant driving current flows between the high potential power supply line VDD and the low potential power supply line GND in response to the data voltage stored in the capacitor.

The compensation circuit 260 is a circuit for compensating the threshold voltage or the like of the driving transistor 350, and the compensation circuit 260 includes at least one thin film transistor and a capacitor. The configuration of the compensation circuit may vary widely depending on the compensation method.

The pixel of the electroluminescence display device 200 is composed of a 2T (Transistor) 1C (Capacitor) structure including a switching transistor 240, a driving transistor 250, a capacitor and a light emitting element 270, 260 can be additionally formed in the present invention, it can be formed into 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, 7T2C and the like.

3 is a plan view of an electroluminescent display device according to an embodiment of the present invention.

3 is a state in which the flexible substrate 310 of the flexible electro-luminescence display device 300 is not bent.

3, the flexible electro-luminescent display 300 includes a flexible substrate 310 on which a thin film transistor and a display area (A / A) in which pixels for actually emitting light are disposed through a light- And a non-active area (N / A) surrounding the periphery of the edge of the area A / A.

A circuit such as a gate driver 390 for driving the flexible electro-luminescent display device 300 and various circuits such as a scan line (S / L) are connected to the non-display area N / A of the flexible substrate 310, Wiring can be arranged. The circuit for driving the flexible electroluminescence display device 300 may be arranged in a GIP (Gate in Panel) on the substrate 310 or a flexible substrate such as TCP (Tape Carrier Package) or COF (Chip on Film) 310, respectively.

A pad 395 is disposed on one side of the substrate 310 of the non-display area N / A. The pad 395 is a metal pattern to which the external module is bonded.

The bending area B / A can be formed by bending a part of the non-display area N / A of the flexible substrate 310 in the bending direction as shown by the arrow. The non-display area N / A of the flexible substrate 310 is not required to be visually recognized on the upper surface of the flexible substrate 310 because the wiring and the drive circuit for driving the screen are disposed and not the area where the image is displayed . Therefore, a portion of the non-display area N / A of the flexible substrate 310 can be bent to reduce the area of the bezel while securing an area for the wiring and the driver circuit.

Various wirings are formed on the flexible substrate 310. The wiring may be formed in the display area A / A of the substrate 310. [ Alternatively, the circuit wiring 370 formed in the non-display area N / A may transmit a signal by connecting a driving circuit, a gate driver, a data driver, or the like.

The circuit wiring 370 is formed of a conductive material and may be formed of a conductive material having excellent ductility to reduce the occurrence of cracks when the substrate 310 is bent. For example, the circuit wiring 370 may be formed of a conductive material having excellent ductility such as gold (Au), silver (Ag), aluminum (Al), or the like and may be formed of various conductive materials And may be formed of any one of molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and alloys of silver (Ag) . ≪ / RTI > The circuit wiring 370 may have a multilayer structure including various conductive materials and may have a three-layer structure of, for example, titanium (Ti) / aluminum (Al) / titanium (Ti) , But is not limited thereto.

The circuit wiring 370 formed in the bending area B / A is subjected to tensile force when bent. For example, the circuit wiring 370 extending on the flexible substrate 310 in the same direction as the bending direction (indicated by an arrow) is subjected to the greatest tensile force, so that cracks may occur. If the cracks are severe, have. Therefore, instead of forming the circuit wiring 370 so as to extend in the bending direction, at least a part of the circuit wiring 370 arranged to include the bending area B / A may be extended in a diagonal direction different from the bending direction The tensile force can be minimized and the occurrence of cracks can be minimized.

The circuit wiring 370 including the bending region B / A may be formed in various shapes and may be formed in various shapes such as a trapezoidal wave shape, a triangular wave shape, a sawtooth wave shape, a sinusoidal wave shape, an omega Shape, or the like.

The cross-sectional structure (I-I ') of the pixel included in the display area A / A and the cross-sectional structure (II-II') of the wiring of the bending area N / A are described in detail in FIGS. 5A and 5B .

4 is a cross-sectional view of a flexible electroluminescent display device 400 according to an embodiment of the present invention.

Referring to FIG. 4, a barrier film 420 is disposed on the flexible substrate 410. The barrier film 420 may be arranged to correspond to at least the display area A / A of the flexible electroluminescence display 400, for protecting various components of the flexible electroluminescence display 400. The barrier film 420 may be made of a material having adhesiveness and may serve to fix the polarizing plate 430 on the barrier film 420.

A back plate 440 is disposed under the flexible substrate 410. In the case where the flexible substrate 410 is made of a plastic material such as polyimide, the manufacturing process of the flexible electro-luminescence display device 400 proceeds in a situation where a supporting substrate made of glass is disposed under the flexible substrate 410, After completion, the support substrate can be released and released.

A back plate 440 for supporting the flexible substrate 410 may be disposed under the flexible substrate 410 because a component for supporting the flexible substrate 410 is required even after the supporting substrate is released. The back plate 440 may be disposed adjacent to the bending area B / A in another area of the flexible substrate 410 except for the bending area B / A.

The backplate 440 may be formed of a plastic film formed of polyimide, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), other suitable polymers, combinations of these polymers, and the like.

A support member 470 is disposed between the two back plates 440 and the support member 470 can be adhered to the back plate 440 by an adhesive layer 460. The support member 470 may be formed of a plastic material such as polycarbonate (PC), polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), other suitable polymers, . The strength of the support member 470 formed of such plastic materials may be controlled by providing additives to increase the thickness and strength of the support member 470. [ And, the support member 470 may be formed of glass, ceramic, metal or other rigid materials or combinations of the above-described materials.

A micro-coating layer 450 is disposed on the bending region B / A of the flexible substrate 410. The micro-coating layer 450 may be formed to cover one side of the barrier film 420. Since micro-cracks may be generated due to a tensile force acting on the wiring portion disposed on the flexible substrate 410 at the time of bending the micro-coating layer 450, the resin may be coated to a thin thickness at the bent position It can protect the wiring.

An insulating film 480 is connected to an end of the flexible substrate 410. On the insulating film 480, various wirings for transmitting signals to pixels arranged in the display area A / A are formed. The insulating film 480 is formed of a material having flexibility so that it can be bent. A driving device may be mounted on the insulating film 480 and a driving package such as a chip on film (COF) may be formed together with the insulating film 480 and may be formed on the insulating film 480 And supplies driving signals and data to the pixels arranged in the display area A / A.

The circuit board connected to the insulating film 480 receives a video signal from the outside and can apply various signals to pixels arranged in the display area A / A, and can be a printed circuit board (PCB) have.

5A and 5B are sectional views of a display region and a bending region of an electroluminescent display device according to an embodiment of the present invention.

5A is a cross-sectional view (I-I ') of a pixel included in the display area A / A described with reference to FIG.

Referring to FIG. 5A, the substrate 510 supports and protects the elements of the EL display device 500 disposed at the upper portion. In recent years, the substrate 510 may be made of a flexible material having a flexible characteristic , The substrate 510 may be a flexible substrate. For example, the flexible substrate may be in the form of a film comprising one of the group consisting of a polyester-based polymer, a silicon-based polymer, an acrylic polymer, a polyolefin-based polymer, and a copolymer thereof.

For example, it is possible to use a polymer such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polysilane, polysiloxane, polysilazane, polycarbosilane, polyacrylate ), Polymethacrylate, polymethylacrylate, polymethylmethacrylate, polyethylacrylate, polyethylmetacrylate, cyclic olefin copolymer (also referred to as " (CO), cyclic olefin polymer (COP), polyethylene (PE), polypropylene (PP), polyimide (PI), polymethylmethacrylate (PMMA), polystyrene (PEEK), polyester sulfone (PES), polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polycarbonate (PC), polyvinylidene fluoride (PVDF), a perfluoroalkyl polymer (PFA), styrene acrylonitrile polymer (SAN), and combinations thereof.

A buffer layer 512 is disposed on the flexible substrate 510. A buffer layer 512 composed of a single layer or a plurality of layers of silicon oxide (SiOx) or silicon nitride (SiNx) prevents penetration of moisture or other impurities through the substrate 510, and the surface of the substrate 510 is planarized . The buffer layer 512 is not necessarily required and may be omitted depending on the type of the substrate 510 and the type of the thin film transistor disposed on the substrate 510.

The thin film transistor 520 disposed on the buffer layer 512 includes a gate electrode 522, a source electrode 524, a drain electrode 526, and a semiconductor layer 528.

The semiconductor layer 528 has a higher mobility than amorphous silicon or amorphous silicon and has low energy consumption and excellent reliability. The semiconductor layer 528 can be formed of a polycrystalline silicon ), But is not limited thereto.

In recent years, oxide semiconductors have attracted attention as an excellent mobility and uniformity. The oxide semiconductors include indium tin gallium zinc oxide (InSnGaZnO) based materials which are quaternary metal oxides, indium gallium zinc oxide (InGaZnO) based materials which are ternary metal oxides, indium tin zinc oxide (InSnZnO) based materials, indium aluminum zinc oxide ) Based material, tin-gallium zinc oxide (SnGaZnO) -based material, aluminum gallium zinc oxide (AlGaZnO) -base material, tin aluminum zinc oxide (SnAlZnO) -based material, bimetallic metal oxide indium zinc oxide (InZnO) An InGaO 3 -based material, an InGaO 3 -based material, an InGaO 3 -based material, an InGaO 3 -based material, an AlGaN-based material, an SnZnO 3 -based material, an AlZnO 3 -based material, a ZnMgO 3 -based tin magnesium oxide material, (SnO) -based material, a zinc oxide (ZnO) -based material, and the like, and each of the elements The ratio is not limited.

The semiconductor layer 528 may include a source region including a p-type or an n-type impurity, a drain region, and a channel between the source region and the drain region, And may include a lightly doped region between the adjacent source and drain regions.

The first insulating layer 514 is an insulating layer composed of a single layer of silicon oxide (SiOx) or silicon nitride (SiNx) or a multilayer thereof and a current flowing in the semiconductor layer 528 flows into the gate electrode 522 . The silicon oxide is less ductile than the metal, but is superior in ductility to silicon nitride and can be selectively formed into a single layer or a plurality of layers depending on the characteristics.

At this time, when the polycrystalline silicon is applied to the semiconductor layer 528, the insulating layer disposed adjacent to the semiconductor layer 528 preferably forms an inorganic film layer having a high hydrogen particle content. For example, when silicon nitride (SiNx) is disposed adjacent to the polycrystalline silicon semiconductor layer 528 and silicon oxide (SiOx) is disposed between the non-adjacent layers, hydrogen particles diffuse into the polycrystalline silicon semiconductor layer 528 So that deterioration of the characteristics of the thin film transistor 520 can be prevented.

When the oxide semiconductor is applied to the semiconductor layer 528, the insulating layer disposed adjacent to the semiconductor layer 528 preferably forms an inorganic film layer having a low hydrogen content. For example, silicon dioxide (SiOx) is disposed adjacent to the oxide semiconductor layer 528, and silicon nitride (SiNx) is disposed between the non-adjacent layers, thereby preventing hydrogen particles from diffusing into the oxide semiconductor layer 528 So that deterioration of the characteristics of the thin film transistor 520 can be prevented.

The gate electrode 522 serves as a switch for turning on or turning off the thin film transistor 520 based on an electric signal transmitted from the outside through the gate line, (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni) and neodymium (Nd) Or multiple layers, but is not limited thereto.

The source electrode 524 and the drain electrode 526 are connected to the data line so that an electric signal transmitted from the outside is transmitted from the thin film transistor 520 to the light emitting element 540. The source electrode 524 and the drain electrode 526 may be formed of a conductive metal such as copper, aluminum, molybdenum, chromium, gold, titanium, nickel, And neodymium (Nd), or an alloy thereof, and may be composed of a single layer or a multilayer, but is not limited thereto.

A second insulating layer 516 and a third insulating layer 518 made of silicon oxide (SiOx) or silicon nitride (SiNx) for insulating the gate electrode 522 from the source electrode 524 and the drain electrode 526, Can be disposed between the gate electrode 522 and the source electrode 524 and the drain electrode 526. [

The storage lower electrode 532 made of the same layer as the gate electrode 522 is disposed on the first insulating layer 514 and the storage upper electrode 532 made of the same material as the gate electrode 522 is formed on the second insulating layer 516. [ The storage capacitor 530 is formed by arranging the storage capacitor 534 and the storage lower electrode 532 so as to overlap with each other.

As described in FIG. 2, the storage capacitor 530 may be formed in various shapes in one pixel. When the second insulating layer 516 is formed of silicon nitride (SiNx) having a dielectric constant higher than that of silicon oxide (SiOx), the capacitance value of the storage capacitor 530 is increased.

A third insulating layer 518 composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx) is disposed on the storage upper electrode 534.

A passivation layer composed of an inorganic insulating layer such as silicon oxide (SiOx) or silicon nitride (SiNx) may be further disposed on the thin film transistor 520. [ The passivation layer can prevent unnecessary electrical connection between the upper and lower components of the passivation layer and prevent contamination or damage from the outside. The structure of the thin film transistor 520 and the light emitting element 540, It may be omitted depending on the characteristics.

The thin film transistor 520 may be classified into an inverted staggered structure and a coplanar structure according to the positions of the components constituting the thin film transistor 520. In the thin film transistor of the inverted staggered structure, the gate electrode is located on the opposite side of the source electrode and the drain electrode with respect to the semiconductor layer. 5A, the thin film transistor 520 of the coplanar structure has the gate electrode 522 positioned on the same side as the source electrode 524 and the drain electrode 526 with respect to the semiconductor layer 528.

Although the thin film transistor 520 of the coplanar structure is shown in FIG. 5A, the electroluminescent display may include a thin film transistor of an inverted staggered structure.

For convenience of explanation, only the driving thin film transistor among the various thin film transistors that can be included in the electroluminescence display device is shown, but a switching thin film transistor, a capacitor, and the like may be included in the electroluminescence display device. When a signal is applied from the gate wiring, the switching thin film transistor transfers a signal from the data wiring to the gate electrode of the driving thin film transistor. The driving thin film transistor transmits a current, which is transmitted through the power supply wiring, to the anode by a signal received from the switching thin film transistor, and controls the light emission by the current transmitted to the anode.

The parasitic capacitance generated between the thin film transistor 520 and the gate line and the data line and between the light emitting elements 540 is reduced by protecting the thin film transistor 520 and alleviating the step generated by the thin film transistor 520, The planarization layer 536 is disposed on the thin film transistor 520 to reduce the capacitance-capacitance.

The planarization layer 536 may be formed of a plurality of layers according to the structure and characteristics of the electroluminescence display device 500 and may be formed of an acrylic resin, an epoxy resin, a phenolic resin, Polyamide resins, polyimides resins, unsaturated polyester resins, polyphenylene resins, polyphenylenesulfides resins, polyphenylene sulfide resins, polyimide resins, And benzocyclobutene, but is not limited thereto.

The light emitting device 540 disposed on the planarization layer 536 includes an anode 542, a light emitting portion 544, and a cathode 546. [

The anode 542 disposed on the planarization layer 536 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), or the like, which is a transparent conductive material, but is not limited thereto .

When the electroluminescent display device 500 is in the top emission mode in which the cathode 546 is disposed, the emitted light is reflected by the anode 542 so that the cathode 546 is more smoothly disposed So that it can be emitted in the upward direction.

For example, the anode 542 may have a two-layer structure in which a transparent conductive layer composed of a transparent conductive material and a reflective layer are sequentially stacked, or a three-layer structure in which a transparent conductive layer, a reflective layer, and a transparent conductive layer are sequentially stacked, Silver (Ag) or an alloy containing silver.

The bank 538 disposed on the anode 542 and the planarization layer 536 can define a pixel capable of dividing an area for actually emitting light. A photoresist is formed on the anode 542 and then a bank 538 is formed by photolithography. A photoresist is a photosensitive resin whose solubility in a developer is changed by the action of light, and a specific pattern can be obtained by exposing and developing the photoresist. The photoresist can be classified into a positive photoresist and a negative photoresist. The positive type photoresist refers to a photoresist whose solubility in a developing solution of the exposed portion is increased by exposure. When the positive type photoresist is developed, a pattern in which the exposed portion is removed is obtained. The negative type photoresist is a photoresist which is greatly reduced in the solubility of the exposed portion in a developing solution upon exposure. When the negative type photoresist is developed, a pattern in which the non-exposed portion is removed is obtained.

FMM (Fine Metal Mask) which is a deposition mask can be used to form the light emitting portion 544 of the light emitting element 540. In order to prevent damage that may occur in contact with the deposition mask disposed on the bank 538 and to maintain a certain distance between the bank 538 and the deposition mask, (Spacer) 539 composed of one of a perovskite-mesoporous, photoacid, and benzocyclobutene (BCB) may be disposed.

A light emitting portion 544 is disposed between the anode 542 and the cathode 546. The light emitting portion 544 serves to emit light and includes a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer, an electron transport layer (ETL) And an electron injection layer (EIL), and some components of the light emitting portion 544 may be omitted depending on the structure or characteristics of the electroluminescence display device 500. [ Here, the organic light emitting layer and the inorganic light emitting layer can be applied to the light emitting layer.

The hole injection layer is disposed on the anode 542, and serves to smoothly inject holes. The hole injection layer may be formed by, for example, HAT-CN (dipyrazino [2,3-f: 2 ', 3'-h] quinoxaline-2,3,6,7,10.11-hexacarbonitrile), CuPc NPD (N, N'-bis (naphthalene-1-yl) -N, N'-bis (phenyl) -2,2'-dimethylbenzidine).

The hole transport layer is disposed on the hole injection layer and serves to smoothly transfer holes to the light emitting layer. The hole transporting layer may be formed of, for example, NPD (N, N'-bis (naphthalene-1-yl) -N, N'- TAD (2,2 ', 7,7'-tetrakis (N, N-dimethylamino) -9,9-spirofluorene) - (3-methylphenyl) -N, N'- , And MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenylamino) -triphenylamine).

The light emitting layer is disposed on the hole transporting layer and can emit light of a specific color including a substance capable of emitting light of a specific color. The light emitting material may be formed using a phosphor or a fluorescent material.

When the light emitting layer emits red light, the peak wavelength of emitted light may be in the range of 600 nm to 650 nm, and CBP (4,4'-bis (carbazol-9-yl) biphenyl) or mCP bis (1-phenylisoquinoline) acetylacetonate iridium), PQIr (acac) (bis (1-phenylquinoline) (acetylacetonate) ) iridium, PQIr (tris (1-phenylquinoline) iridium), and PtOEP (octaethylporphyrin platinum). Or a fluorescent material containing PBD: Eu (DBM) 3 (Phen) or Perylene.

Here, the peak wavelength? Max refers to the maximum wavelength of EL (Electroluminescence). The wavelength at which the light emitting layers forming the light emitting portion emit light intrinsically is referred to as PL (Photo Luminescence), and the light that is influenced by the thickness and optical characteristics of the layers constituting the light emitting layers is referred to as emittance. At this time, EL (Electroluminescence) refers to light finally emitted by the electroluminescence display device, and can be expressed by a product of PL (Photo Luminescence) and Emittance.

When the light emitting layer emits green light, the peak emission wavelength may range from 520 nm to 540 nm, including a host material including CBP or mCP, and Ir (ppy) ₃ (tris (2-phenylpyridine) iridium Lt; RTI ID = 0.0 > Ir complex < / RTI > Further, it may be made of a fluorescent material containing Alq ₃ (tris (8-hydroxyquinolino) aluminum).

When the light emitting layer emits blue light, the peak emission wavelength may range from 440 nm to 480 nm, including a host material including CBP or mCP, and FIrPic (bis (3,5-difluoro-2 - (2-pyridyl) phenyl- (2-carboxypyridyl) iridium), and a phosphorescent material containing a dopant material such as spiro-DPVBi (4,4'-Bis -1-yl) biphenyl, DSA (1-4-di- [4- (N, N-di-phenyl) amino] styryl-benzene, PFO, polyphenylenevinylene Or a fluorescent material containing one of them.

An electron transporting layer is disposed on the light emitting layer to smooth the movement of electrons to the light emitting layer. The electron transport layer may be formed of, for example, Liq (8-hydroxyquinolinolato-lithium), PBD (2- (4-biphenyl) -5- (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and BAlq (4-biphenyl) (bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum).

An electron injection layer may further be disposed on the electron transporting layer. The electron injection layer is an organic layer that facilitates the injection of electrons from the cathode 546, and may be omitted depending on the structure and characteristics of the electroluminescence display device 500. The electron injection layer is BaF2, LiF, NaCl, CsF, Li 2 O , and may be a metallic inorganic compound such as BaO, HAT-CN (dipyrazino [ 2,3-f: 2 ', 3'-h] quinoxaline-2, 3,6,7,10.11-hexacarbonitrile), CuPc (phthalocyanine), and NPD (N, N'-bis (naphthalene- , And the like.

An electron blocking layer or a hole blocking layer blocking the flow of holes or electrons is disposed at a position adjacent to the light emitting layer so that the electrons are moved from the light emitting layer to the adjacent hole transporting layer when the electrons are injected into the light emitting layer Or when the holes are injected into the light emitting layer, it is possible to prevent the phenomenon that the electrons move from the light emitting layer to the adjacent electron transporting layer, thereby improving the light emitting efficiency.

The cathode 546 is disposed on the light emitting portion 544 and serves to supply electrons to the light emitting portion 544. The cathode 546 may be formed of a metal material such as magnesium (Mg), silver-magnesium (Ag: Mg) or the like, which is a conductive material having a low work function, and is not limited thereto.

When the electroluminescent display device 500 is a top-mounted type, the cathode 546 is formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide Zinc oxide (ZnO), and tin oxide (TiO 2).

The thin film transistor 520 and the light emitting element 540 which are components of the electroluminescence display device 500 are formed on the light emitting element 540 in order to prevent oxidation or damage due to moisture, A plurality of sealing layers, a foreign material compensation layer, and a plurality of barrier films may be stacked.

The sealing layer may be disposed on the upper surface of the thin film transistor 520 and the light emitting element 540 and may be composed of one of silicon nitride (SiNx) or aluminum oxide (AlOz), which is an inorganic material. A sealing layer may be further disposed on the foreign material compensation layer.

The foreign material compensation layer is disposed on the sealing layer and may be an organic material such as silicon oxy carbon (SiOC), acrylic or epoxy resin, but is not limited thereto. When a defect occurs due to a foreign substance or a crack generated by a particle, the foreign substance compensating layer can compensate the foreign substance by covering the foreign object.

A barrier film may be disposed on the sealing layer and the foreign material compensation layer so that the electroluminescent display device 500 can delay the penetration of oxygen and moisture from the outside. The barrier film is formed of a film having a light-transmitting property and a double-sided adhesive property, and may be composed of an insulating material selected from the group consisting of an olefin series, an acrylic series, and a silicone series, or a COP A barrier film composed of a material selected from the group consisting of a polymer, a COC (Cycloolefin Copolymer), and a PC (Polycarbonate) may be further laminated, but the present invention is not limited thereto.

5B is a sectional structure (II-II ') of the wiring of the bending region N / A described in FIG.

5B is substantially the same as or similar to the elements described in FIG. 5A, and a detailed description thereof will be omitted.

The gate signal and the data signal described in FIGS. 1 to 3 are transferred from the outside to the pixel arranged in the display area A / A through the circuit wiring arranged in the non-display area N / A of the flexible electroluminescence display device So as to emit light.

In the case where the wiring disposed in the non-display area N / A including the bending area B / A of the flexible electroluminescence display device 500 is formed in a single-layer structure, a large space for arranging the wiring is required. The conductive material is patterned by a process such as etching after the conductive material is deposited. However, since the fineness of the etching process is limited, a large space is required due to the limit for narrowing the interval between the wirings. The area of the non-display area N / A becomes large, so that it may be difficult to minimize the bezel.

In addition, when one wiring is used to transmit one signal, the corresponding signal may not be transmitted when the wiring is cracked. The cracks may be generated in the wiring itself or cracks may be generated in the other layers in the course of bending the flexible substrate, so that cracks may be propagated to the wiring. In this way, when a crack is generated in the wiring, a signal to be transmitted may not be transmitted.

Accordingly, the wiring disposed in the bending area B / A of the flexible electroluminescence display device 500 according to the embodiment of the present invention is arranged in the form of a double wiring of the first wiring 562 and the second wiring 564 do.

The first wiring 562 and the second wiring 564 are formed of a conductive material and may be formed of a conductive material having excellent ductility in order to reduce the occurrence of cracks when the flexible substrate 510 is bent.

The first wiring 562 may be formed of the same material as the gate electrode 522 and the storage lower electrode 532 of the thin film transistor 520 illustrated in FIG. 5A.

The first wiring 562 is formed of a conductive metal such as Cu, Al, Mo, Cr, Au, Ti, Ni, Nd), or the like, or an alloy thereof, which may be composed of a single layer or multiple layers.

The buffer layer 512 and the second insulating layer 516 described in FIG. 5A are disposed on the lower portion and the upper portion of the first wiring 562, respectively. The buffer layer 512 and the second insulating layer 516 may be prevented from being damaged due to the reaction of the first wiring 562 with moisture or the like and the first wiring 562 and the second wiring So that the second wiring 564 can be easily formed and arranged without causing a defective connection.

The second wiring 564 is disposed on the flexible substrate 510. At this time, the second wiring 564 is disposed in an area not overlapping with the first wiring 562, and the side of the first wiring 562 and the side of the second wiring 562 are disposed between two adjacent first wirings 562 564) with a spacing of 1.0 um or less.

The second wiring 564 may be formed of the same material as the storage upper electrode 534 described in FIG. 5A. The second wiring 564 may be formed of a conductive metal such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium Or the like, or an alloy thereof, which may be composed of a single layer or multiple layers.

The area of the flexible substrate 510 on which the second wiring 564 is disposed further etches a certain thickness. A predetermined step is formed between the first wiring 562 and the second wiring 564 so that the upper surface of the second wiring 564 disposed on the etched area on the flexible substrate 510 is electrically connected to the first wiring 562 so as not to be connected.

A step formed between the first wiring 562 and the second wiring 564 may be formed at a very short distance of 1.0 μm or less between the side surface of the first wiring 562 and the side surface of the second wiring 564, No defect occurs that the wiring 562 and the second wiring 564 are connected to each other.

As described above, the inventors of the present invention can minimize the separation distance between the first wiring 562 and the second wiring 564, thereby efficiently utilizing the space for arranging the wiring in the non-display area N / A , The bezel region of the electroluminescence display device 500 can be minimized.

The first wiring 562 and the second wiring 564 formed in the bending area B / A are subjected to a tensile force when bent. As described with reference to FIG. 3, wirings extending in the same direction as the bending direction on the flexible substrate 510 are subjected to the greatest tensile force, and cracks may occur. If the cracks are severe, disconnection may occur. Therefore, instead of forming the wiring to extend in the bending direction, at least a part of the wiring disposed including the bending region B / A is formed to extend in the diagonal direction different from the bending direction, thereby minimizing the tensile force, The occurrence can be reduced. The shape of the wiring can be configured as a rhombic shape, a triangular wave shape, a sinusoidal shape, a trapezoidal shape, and the like, but is not limited thereto.

The planarizing layer 536 described with reference to FIG. 5A is disposed on the first wiring 562 and the second wiring 564. The planarization layer 536 may be formed of a resin such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, But is not limited to, one or more of Unsaturated Polyesters Resin, Polyphenylene Resin, Polyphenylenesulfides Resin, and Benzocyclobutene.

On the planarizing layer 536, the micro-coating layer 570 described in FIG. 4 is disposed. Since microcracks may be generated due to a tensile force acting on the wiring portion disposed on the flexible substrate 510 at the time of bending, the micro coating layer 570 may be formed by coating resin with a thin thickness at a bent position, It can play a protective role.

The neutral plane (N / P) means a virtual plane in which, when a structure is bent, a compressive force and a tensile force applied to the structure are canceled each other and are not subjected to stress. When bent, the layer disposed on the upper surface with respect to the neutral plane is stretched to receive the tensile force, and the layer disposed on the lower surface is compressed, so that the layer is compressed.

The insulating layer including the planarization layer 536 has a property of brittleness because the inorganic or organic material constituting the insulating layer itself has a property of significantly lowering the flexibility as compared with the wiring formed of a metal. Therefore, if the substrate on which the insulating layer is formed is bent, a crack may be generated in the insulating layer due to tensile force due to bending, and when the same compressive force and tensile force are applied, tensile force is applied. It is very important to optimize the neutral plane to minimize the magnitude of the force.

The electroluminescent display 500 according to the present invention has a region where the first wiring 562 and the second wiring 564 are disposed adjacent to the flexible substrate 510 and the bending region B / Only one planarization layer 536 may be formed on the substrate. In the case where a plurality of insulating layers or planarization layers are formed in the same wiring structure when the neutral plane N / P is formed at a certain distance from the flexible substrate 510, the neutral plane N / P is an insulating layer, A neutral plane N / P having the same distance is formed in the micro coating layer 570 in the bending region B / A of the electroluminescent display device 500 according to the present invention It is possible to prevent the neutral plane N / P from being formed in the planarization layer 536. [

As described above, the electroluminescent display device 500 according to the present invention can be generated in the wiring or the planarization layer 536 by the electroluminescent display device 500 of a new structure in which the neutral plane N / P can be optimized Cracks can be prevented.

The manufacturing process of the first wiring 562 and the second wiring 564 will be described with reference to FIGS. 6A to 6F.

Figs. 6A to 6F show a manufacturing process of the first wiring and the second wiring in the bending area of the flexible electroluminescence display device according to the embodiment of the present invention.

The main components of the flexible electroluminescence display device shown in Figs. 6A to 6F may be substantially the same as or similar to the main components described in Figs. 1 to 5.

Referring to FIG. 6A, a buffer layer 612, a first wiring layer 662a, and a second insulating layer 616 are deposited and disposed on a flexible substrate 610. The first wiring layer 662a may be formed of the same material as the gate electrode 522 and the storage lower electrode 532 of the thin film transistor 520 described in FIG. 5A.

6B, a photoresist P / R is formed on the second insulating layer 616 in accordance with the shape of the first wiring 662, and dry etching is performed in accordance with the shape of the first wiring 662, Thereby forming a first wiring 662.

At this time, the flexible substrate 610 is further etched in the region adjacent to the first wiring 662 to form a space between the lower surface of the first wiring 662 and the upper surface of the flexible substrate 610 in the region adjacent to the first wiring 662, To 6000A.

Referring to FIG. 6C, a second wiring layer 664a and a photoresist (P / R) are sequentially deposited on the etched area of the flexible substrate 610 and the photoresist (P / R). The second wiring layer 664a may be formed of the same material as the storage upper electrode 534 described in FIG. 5A.

Referring to FIG. 6D, a second wiring 664, which is a region adjacent to the first wiring 662, is formed through an ashing process of a photoresist (P / R) formed on the second wiring layer 664a So as to be formed only on the region to be disposed. The photoresist P / R is etched until the thickness of the photoresist P / R is in contact with the buffer layer 612 in order to prevent the defect of connecting the first wiring 662 and the second wiring 664 to each other, Proceed with the process.

Referring to FIGS. 6E and 6F, the exposed second wiring layer 664a is dry-etched to form a second wiring 664 by removing the metal layer on the photoresist (P / R). The manufacturing process of finally forming the first wiring 662 and the second wiring 664 by removing the photoresist P / R disposed on the first wiring 662 is completed and the subsequent manufacturing process is terminated Go ahead.

The electroluminescent display device according to an embodiment of the present invention may be applied to various devices such as a mobile device, a video phone, a smart watch, a watch phone, a wearable device, a foldable device, a rollable device, a bendable device, a flexible device, a curved device, an electronic organizer, an electronic book, a portable multimedia player (PMP), a personal digital assistant (PDA) A mobile medical device, a desktop PC, a laptop PC, a netbook computer, a workstation, a navigation system, a car navigation system, a vehicle display system, a television, a wall paper display , A notebook computer, a monitor, a camera, a camcorder, a home appliance, and the like. The flexible electroluminescent display device according to an embodiment of the present invention includes:

A flexible electroluminescent display device according to an embodiment of the present invention includes a flexible substrate including a display region and a non-display region outside a display region, a bending region disposed in a non-display region, the bending region including a bend region of the flexible substrate, A storage capacitor including a storage upper electrode and a storage lower electrode, the storage capacitor being disposed on the display region, the storage capacitor being disposed on the display region, the thin film transistor being disposed on the display region, The first wiring and the second wiring arranged in the bending region and the gate electrode, the storage lower electrode and the first wiring of the thin film transistor are formed of the same layer, and the storage upper electrode and the second wiring are formed in the same layer .

In the flexible electroluminescent display device according to the embodiment of the present invention, the buffer layer is further disposed on the flexible substrate, and the first wiring is disposed on the buffer layer.

The flexible substrate of the flexible electroluminescence display device according to the embodiment of the present invention includes an etched region in the region adjacent to the first wiring and a second wiring in the etched region.

The first wiring and the second wiring of the flexible electroluminescence display device according to the embodiment of the present invention have a step difference from each other, and the first wiring and the second wiring are not connected to each other.

The first wiring and the second wiring of the flexible electroluminescence display device according to the embodiment of the present invention are arranged so as not to overlap with each other.

The first wiring and the second wiring of the flexible electroluminescence display device according to the embodiment of the present invention have a distance of 1 mu m or less.

A semiconductor layer of a thin film transistor of a flexible electroluminescence display device according to an embodiment of the present invention includes a region doped with an impurity.

A thin film transistor of a flexible electroluminescence display device according to an embodiment of the present invention includes a region doped with one of impurities such as boron (B), aluminum (Al), gallium (Ga), and indium (In).

A thin film transistor of a flexible electroluminescence display device according to an embodiment of the present invention includes a region doped with one impurity of phosphorus (P), arsenic (As), and antimony (Sb).

A flexible electroluminescent display device according to an embodiment of the present invention includes a flexible substrate including a display area and a non-display area outside a display area, a bending area disposed in a non-display area, including a bend area of the flexible substrate, A thin film transistor arranged on the display region of the flexible substrate and including a semiconductor layer, a gate electrode, and a source / drain electrode, a thin film transistor arranged on the display region of the flexible substrate, A storage lower electrode formed of the same layer as the gate electrode of the transistor, a light emitting element disposed on the display region of the flexible substrate and connected to the thin film transistor, a buffer layer disposed on the buffer layer of the flexible substrate, An insulating layer disposed on the first wiring, the storage lower electrode, and the first wiring, And a second wiring arranged on a layer of the storage upper electrode and a storage upper electrode overlapping with the storage lower electrode and in the bending area of the flexible substrate and composed of the same layer as the storage upper electrode, Wherein the first wiring and the second wiring are adjacent to each other without overlapping each other, and the first wiring and the second wiring have a step difference.

The first wiring and the second wiring of the flexible electroluminescence display device according to the embodiment of the present invention have a distance of 1 mu m or less.

A semiconductor layer of a thin film transistor of a flexible electroluminescence display device according to an embodiment of the present invention includes a region doped with an impurity.

A thin film transistor of a flexible electroluminescence display device according to an embodiment of the present invention includes a region doped with one of impurities such as boron (B), aluminum (Al), gallium (Ga), and indium (In).

A thin film transistor of a flexible electroluminescence display device according to an embodiment of the present invention includes a region doped with one impurity of phosphorus (P), arsenic (As), and antimony (Sb).

A flexible electroluminescent display device according to an embodiment of the present invention includes a step of forming a flexible substrate including a display area and a non-display area outside the display area, a step of forming a buffer layer on a flexible substrate including a display area and a non- Forming a thin film transistor including a semiconductor layer, a gate electrode, and a source / drain electrode on a display region of the flexible substrate; forming a storage lower electrode and a storage upper electrode on a display region of the flexible substrate; Forming a first wiring composed of the same layer as the gate electrode on the buffer layer on the non-display region of the flexible substrate, forming a first wiring on the non-display region of the flexible substrate Etching an area adjacent to the first wiring, etching the area in the etched area of the flexible substrate Forming a second wiring composed of the same layer as the storage upper electrode, and bending a part of the non-display area of the flexible substrate.

The first wiring and the second wiring of the flexible electroluminescence display device according to the embodiment of the present invention have a step difference from each other, and the first wiring and the second wiring are formed so as not to be connected to each other.

The first wiring and the second wiring of the flexible electro-luminescence display device according to the embodiment of the present invention are manufactured with a spacing of 1 um or less.

And a step of doping the semiconductor layer of the flexible electroluminescence display device according to the embodiment of the present invention with impurities.

The impurity of the flexible electroluminescence display device according to the embodiment of the present invention is one of boron (B), aluminum (Al), gallium (Ga), and indium (In).

The impurity of the flexible electroluminescence display device according to the embodiment of the present invention is one of phosphorus (P), arsenic (As) and antimony (Sb).

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

100, 200, 300, 400, 500, 600: Electroluminescent display device
110:
120: Timing controller
130: Data driver
140: gate driver
150: Display panel
160: pixel
220: gate line
230: Data line
240: switching transistor
250: driving transistor
260: Compensation circuit
270, 540: Light emitting element
310, 410, 510, 610: substrate
320: Circuit Wiring
420: barrier film
430: polarizer
440: back plate
450, 570: micro coating layer
460: adhesive layer
470: Support member
480: circuit board
512, 612: buffer layer
514: first insulating layer
516, 616: second insulating layer
518: third insulating layer
520: Thin film transistor
522: gate electrode
524: source electrode
526: drain electrode
528: semiconductor layer
530: storage capacitor
532: storage lower electrode
534: Storage upper electrode
536, 636: planarization layer
538: Bank
539: Spacer
542: anode
544:
546: Cathode
550:
562, 662: first wiring
564, 664: second wiring
662a: first wiring layer
664a: second wiring layer
A / A: display area N / A: non-display area
B / A: bending area N / P: neutral plane
P / R: Photoresist

Claims (20)

A flexible substrate including a display region and a non-display region outside the display region;
A bending region disposed in the non-display region, the bending region including a bend region of the flexible substrate;
A thin film transistor disposed on the display region and including a semiconductor layer, a gate electrode, and a source / drain electrode;
A storage capacitor disposed on the display region and including a storage upper electrode and a storage lower electrode;
A light emitting element disposed on the display region and connected to the thin film transistor;
A first wiring and a second wiring arranged in the bending region; And
Wherein the gate electrode of the thin film transistor, the storage lower electrode, and the first wiring are formed of the same layer,
Wherein the storage upper electrode and the second wiring are formed of the same layer. The method according to claim 1,
A buffer layer is further disposed on the flexible substrate, and the first wiring is disposed on the buffer layer. 3. The method of claim 2,
Wherein the flexible substrate includes an etched region in an area adjacent to the first wiring, and the second wiring is disposed in the etched area. The method of claim 3,
Wherein the first wiring and the second wiring have a step difference from each other, and the first wiring and the second wiring are not connected to each other. The method according to claim 1,
Wherein the first wiring and the second wiring are arranged so as not to overlap with each other. 6. The method of claim 5,
Wherein the first wiring and the second wiring have a distance of 1 mu m or less. The method according to claim 1,
Wherein the semiconductor layer of the thin film transistor includes a region doped with an impurity. 8. The method of claim 7,
Wherein the thin film transistor includes a region doped with one of impurities of boron (B), aluminum (Al), gallium (Ga), and indium (In). 8. The method of claim 7,
Wherein the thin film transistor includes a region doped with one impurity of phosphorus (P), arsenic (As), and antimony (Sb). A flexible substrate including a display region and a non-display region outside the display region;
A bending region disposed in the non-display region, the bending region including a bend region of the flexible substrate;
A buffer layer disposed on the display region and the non-display region of the flexible substrate;
A thin film transistor disposed on the display region of the flexible substrate, the thin film transistor including a semiconductor layer, a gate electrode, and a source / drain electrode;
A storage lower electrode disposed on the display region of the flexible substrate and composed of the same layer as the gate electrode of the thin film transistor;
A light emitting element disposed on the display region of the flexible substrate and connected to the thin film transistor;
A first wiring disposed on the buffer layer in the bending region of the flexible substrate and composed of the same layer as the storage lower electrode;
An insulating layer disposed on the storage lower electrode and the first wiring;
A storage upper electrode disposed on the insulating layer and overlapping the storage lower electrode; And
And a second wiring disposed in a bending region of the flexible substrate and composed of the same layer as the storage upper electrode,
The flexible substrate includes an etched area adjacent to the first interconnection, the second interconnection is disposed in the etched area,
The first wiring and the second wiring are adjacent to each other without overlapping, and the first wiring and the second wiring have a step difference. 11. The method of claim 10,
Wherein the first wiring and the second wiring have a distance of 1 mu m or less. 11. The method of claim 10,
Wherein the semiconductor layer of the thin film transistor includes a region doped with an impurity. 13. The method of claim 12,
Wherein the thin film transistor includes a region doped with one of impurities of boron (B), aluminum (Al), gallium (Ga), and indium (In). 13. The method of claim 12,
Wherein the thin film transistor includes a region doped with one impurity of phosphorus (P), arsenic (As), and antimony (Sb). Forming a flexible substrate including a display region and a non-display region outside the display region;
Forming a buffer layer on a flexible substrate including the display area and the non-display area;
Forming a thin film transistor including a semiconductor layer, a gate electrode, and a source / drain electrode on a display region of the flexible substrate;
Forming a storage lower electrode and a storage upper electrode on a display region of the flexible substrate;
Forming a light emitting element connected to the thin film transistor on a display region of the flexible substrate;
Forming a first wiring composed of the same layer as the gate electrode on a buffer layer on a non-display region of the flexible substrate;
Etching a region adjacent to the first wiring on the non-display region of the flexible substrate;
Forming a second wiring in the same area as the storage upper electrode in an etched area of the flexible substrate; And
And bending a part of the non-display area of the flexible substrate. 16. The method of claim 15,
Wherein the first wiring and the second wiring have a step difference from each other and the first wiring and the second wiring are formed so as not to be connected to each other. 16. The method of claim 15,
Wherein the first wiring and the second wiring are formed to have a distance of 1um or less. 16. The method of claim 15,
And doping the semiconductor layer with an impurity. 19. The method of claim 18,
Wherein the impurity is one of boron (B), aluminum (Al), gallium (Ga), and indium (In). 19. The method of claim 18,
Wherein the impurity is one of phosphorus (P), arsenic (As), and antimony (Sb).

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