KR102452831B1 - Flexible Electroluminescent Display Device - Google Patents

Abstract

A flexible electroluminescent display device according to an embodiment of the present invention includes a flexible substrate including a display area and a bent area extending from one side of the display area, a thin film transistor and a light emitting device disposed on the display area, a display area and bending and a micro-coating layer disposed on the planarization layer of the wiring and the planarization layer of the bending area, and the micro-coating layer is composed of a plurality of layers, and at least one layer of the micro-coating layer is composed of graphene do.

Description

Flexible Electroluminescent Display Device

The present specification relates to a flexible electroluminescent display, and more particularly, to a flexible electroluminescent display capable of minimizing defects in a bending area of the flexible electroluminescent display.

As we enter the information age in earnest, the field of display devices that visually display electrical information signals is rapidly developing, and research to develop performance such as thinner, lighter, and lower power consumption for various display devices is continuing.

Representative display devices include a liquid crystal display device (LCD), a field emission display device (FED), an electro-wetting display device (EWD), and an organic light emitting display device (Organic). Light Emitting Display Device (OLED) and the like.

An electroluminescent display, which is represented by an organic light emitting display, is a self-luminous display, and unlike a liquid crystal display, it does not require a separate light source, so it can be manufactured in a lightweight and thin form. In addition, the electroluminescent display device is not only advantageous in terms of power consumption due to low voltage driving, but also has excellent color realization, response speed, viewing angle, and contrast ratio (CR), and is expected to be utilized in various fields.

In an electroluminescent display device, an Emissive Layer (EML) is disposed between two electrodes composed of an anode and a cathode. When holes from the anode are injected into the emission layer and electrons from the cathode are injected into the emission layer, the injected electrons and holes recombine with each other to form excitons in the emission layer and emit light.

The light emitting layer contains a host material and a dopant material, and interaction between the two materials occurs, and the host generates excitons from electrons and holes and transfers energy to the dopant, and the dopant is a dye-based organic material to which a small amount is added. It receives energy from the host and converts it into light.

The electroluminescent display device encapsulates the electroluminescent display with glass, metal, or film to block the inflow of moisture or oxygen into the electroluminescent display from the outside, thereby preventing the light emitting layer or electrode. It prevents oxidation and protects from external mechanical or physical impact.

As the display device becomes smaller, efforts are being made to reduce the bezel area, which is the outer portion of the active area (A/A), in order to increase the effective display screen size in the same area of the display device.

In addition, since wiring and a driving circuit for driving the screen are disposed in the bezel area corresponding to the non-active area (N/A), there is a limit in reducing the bezel area.

In relation to a flexible electroluminescent display device that can maintain display performance even when bent by applying a flexible substrate made of a flexible material such as plastic, which has been recently developed, bezel while securing area for wiring and driving circuits In order to reduce the area, the bezel area may be reduced by bending the non-display area N/A of the flexible substrate.

An electroluminescent display device using a flexible substrate such as plastic secures flexibility such as a substrate, various insulating layers disposed on the substrate, and wiring formed of a metal material, and cracks that may be generated by bending. ) is necessary to prevent defects such as

The insulating layer and wiring disposed in the bending area (B/A) prevent cracks by disposing a protective layer such as a micro coating layer on the wiring and the insulating layer of the bending area (B/A). It protects the wiring from foreign substances from the outside and controls the neutral plane of the bending area (B/A) by coating it with a certain thickness.

In an electroluminescent display device that has been recently developed for minimization of the bezel area and thinning of the display device, the bending area (B/A) of the flexible substrate has an extreme curvature, and the thickness of the micro-coating layer is also minimized.

In such a bending region, the micro-coating layer has an extreme curvature and a minimized thickness, and cracks may occur on the surface of the micro-coating layer, thereby causing defects.

Accordingly, the inventors of the present invention recognized the above-mentioned problems, and invented a flexible electroluminescent display including a bending area (B/A) structure of a new structure.

The inventors of the present specification recognized that the space to arrange wiring was insufficient as the resolution of the electroluminescent display device gradually increased, and invented a new structure of the electroluminescent display device in which wiring can be more freely arranged within a limited space. .

The tasks of the present specification are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

A flexible electroluminescent display device according to an embodiment of the present invention includes a flexible substrate including a display area and a bent area extending from one side of the display area, a thin film transistor and a light emitting device disposed on the display area, a display area and bending and a micro-coating layer disposed on the planarization layer of the wiring and the planarization layer of the bending area, and the micro-coating layer is composed of a plurality of layers, and at least one layer of the micro-coating layer is composed of graphene do.

A flexible electroluminescent display device according to an embodiment of the present invention includes a flexible substrate including a display area including emitting pixels, a non-display area having a bending area outside the display area, and a non-display area including a display area and a bending area. It includes a micro-coating layer disposed on the flattening layer of the wiring and the planarization layer of the display area, and the bending area, and a layer made of graphene is disposed on the upper and lower surfaces of the micro-coating layer to prevent cracks in the micro-coating layer. prevent.

The electroluminescent display device according to the embodiment of the present specification has an effect of minimizing defects in which cracks in the micro-coating layer are generated in the bending region of the flexible substrate.

In addition, the flexible electroluminescent display device according to the embodiment of the present specification has an effect that wiring used in the flexible electroluminescent display device can be more freely arranged in a limited space.

Effects of the flexible electroluminescent display device according to the embodiment of the present specification are not limited by the contents exemplified above, and more various effects are included in the present specification.

Since the contents of the specification described in the problems to be solved above, the means for solving the problems, and the effects do not specify the essential characteristics of the claims, the scope of the claims is not limited by the matters described in the contents of the specification.

1 is a block diagram of an electroluminescent display device according to an embodiment of the present specification.
2 is a circuit diagram of a pixel included in an electroluminescent display device according to an embodiment of the present specification.
3 is a plan view of an electroluminescent display device according to an embodiment of the present specification.
4A and 4B are cross-sectional views illustrating detailed structures of a display area and a bending area of an electroluminescent display device according to an embodiment of the present specification.
5A and 5B are cross-sectional views and enlarged views of a bending region of a flexible electroluminescent display device according to an embodiment of the present specification.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative and the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless specifically stated otherwise.

In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between two parts unless 'directly' is used.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be

1 is a block diagram of an electroluminescent display device 100 according to an embodiment of the present specification.

Referring to FIG. 1 , the electroluminescent display device 100 includes an image processing unit 110 , a timing controller 120 , a data driver 130 , a gate driver 140 , and a display panel 150 .

The image processing unit 110 outputs a data enable signal DE along with the data signal DATA supplied from the outside. The image processing unit 110 may output one or more of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal in addition to the data enable signal DE.

The timing controller 120 receives the data signal DATA from the image processing unit 110 as well as a driving signal including a data enable signal DE or a vertical synchronization signal, a horizontal synchronization signal, and a clock signal. The timing controller 120 includes a gate timing control signal GDC for controlling the operation timing of the gate driver 140 and a data timing control signal DDC for controlling the operation timing of the data driver 130 based on the driving signal. to output

The data driver 130 samples and latches the data signal DATA supplied from the timing controller 120 in response to the data timing control signal DDC supplied from the timing controller 120 , and converts it into a gamma reference voltage and outputs it. . The data driver 130 outputs the data signal DATA through the data lines DL1 to DLn.

The gate driver 140 outputs the gate signal while shifting the level of the gate voltage in response to the gate timing control signal GDC supplied from the timing controller 120 . The gate driver 140 outputs a gate signal through the gate lines GL1 to GLm.

The display panel 150 displays an image while the pixel 160 emits light in response to the data signal DATA and the gate signal supplied from the data driver 130 and the gate driver 140 . The detailed structure of the pixel 160 will be described in detail with reference to FIGS. 2 and 4 .

2 is a circuit diagram of a pixel included in an electroluminescent display device according to an embodiment of the present specification.

Referring to FIG. 2 , a pixel of the electroluminescent display device 200 includes a switching transistor 240 , a driving transistor 250 , a compensation circuit 260 , and a light emitting device 270 .

The light emitting device 270 operates to emit light according to a driving current formed by the driving transistor 250 .

The switching transistor 240 performs a switching operation so that the data signal supplied through the data line 230 is stored as a data voltage in the capacitor in response to the gate signal supplied through the gate line 220 .

The driving transistor 250 operates so that a constant driving current flows between the high potential power line VDD and the low potential power line GND in response to the data voltage stored in the capacitor.

The compensation circuit 260 is a circuit for compensating the threshold voltage of the driving transistor 250 , and the compensation circuit 260 includes one or more thin film transistors and a capacitor. The configuration of the compensation circuit may vary greatly depending on the compensation method.

In addition, the pixel of the electroluminescent display device 200 is composed of a 2T (Transistor) 1C (Capacitor) structure including a switching transistor 240 , a driving transistor 250 , a capacitor and a light emitting device 270 , but a compensation circuit ( 260) can be variously formed as 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, 7T2C, and the like.

3 is a plan view of an electroluminescent display device according to an embodiment of the present specification. In detail, the flexible substrate 310 of the flexible electroluminescent display device 300 is not bent.

Referring to FIG. 3 , the flexible electroluminescent display device 300 has a display area A/A and a display area A in which pixels that actually emit light through a thin film transistor and a light emitting device are disposed on a flexible substrate 310 . A non-display area N/A that is a bezel area surrounding the edge of /A) is included.

The non-display area N/A of the flexible substrate 310 includes a circuit such as a gate driver 390 for driving the flexible electroluminescent display 300 and various signals such as a scan line (S/L). A wiring may be disposed.

The circuit for driving the flexible electroluminescent display device 300 is disposed on the substrate 310 as a GIP (Gate in Panel), or in a TCP (Tape Carrier Package) or COF (Chip on Film) method, the flexible substrate 310 . may be connected to

A pad 395 , which is a metal pattern, is disposed on one side of the substrate 310 in the non-display area N/A so that an external module may be bonded.

A portion of the non-display area N/A of the flexible substrate 310 may be bent in a bending direction as indicated by an arrow to form the bending area B/A. In the non-display area N/A of the flexible substrate 310 , wirings and driving circuits for driving the screen are disposed, and since an image is not displayed, there is no need to be visually recognized from the upper surface of the flexible substrate 310 . . Accordingly, by bending a portion of the non-display area N/A of the flexible substrate 310 , the bezel area can be reduced while securing an area for the wiring and the driving circuit.

Various wirings are formed on the flexible substrate 310 . The wiring may be formed in the display area A/A of the substrate 310 or the circuit wiring 370 formed in the non-display area N/A may be connected to a driving circuit, a gate driver, a data driver, etc. signal can be transmitted.

The circuit wiring 370 is formed of a conductive material, and may be formed of a conductive material having excellent ductility in order to reduce the occurrence of cracks when the substrate 310 is bent, gold (Au), silver (Ag), aluminum ( Al), etc., may be formed of a conductive material having excellent ductility, and may be formed of one of various conductive materials used in the display area (A/A), molybdenum (Mo), chromium (Cr), titanium (Ti), It may also be composed of nickel (Ni), neodymium (Nd), copper (Cu), and an alloy of silver (Ag) and magnesium (Mg).

The circuit wiring 370 may have a multi-layer structure including various conductive materials, and may have a titanium (Ti)/aluminum (Al)/titanium (Ti) three-layer structure, but is not limited thereto.

The circuit wiring 370 formed in the bending area B/A receives a tensile force when bent. The circuit wiring 370 extending in the same direction as the bending direction on the flexible substrate 310 receives the greatest tensile force, and thus cracks or disconnection may occur. Accordingly, rather than forming the circuit wiring 370 to extend in the bending direction, at least a portion of the circuit wiring 370 disposed including the bending region B/A extends in an oblique direction that is different from the bending direction. can be formed to minimize the tensile force.

The circuit wiring 370 disposed including the bending area B/A may be formed in various shapes, and may be formed in a trapezoidal wave shape, a triangular wave shape, a sawtooth wave shape, a sine wave shape, an omega (Ω) shape, a rhombus shape, or the like. can be

The detailed structure cross-section I-I' of the display area A/A and the detailed structure cross-section II-II' of the bending area B/A will be described in detail with reference to FIGS. 4A and 4B .

4A and 4B are cross-sectional views illustrating detailed structures of a display area and a bending area of an electroluminescent display device according to an embodiment of the present specification.

4A is a detailed structural cross-section I-I' of the display area A/A described in FIG. 3 .

Referring to FIG. 4 , the substrate 410 serves to support and protect the components of the electroluminescent display 400 disposed thereon. Recently, the flexible substrate 410 may be used as a flexible material having flexible characteristics such as plastic.

The flexible substrate 410 may be in the form of a film including one of a polyester-based polymer, a silicone-based polymer, an acrylic polymer, a polyolefin-based polymer, and a copolymer thereof, specifically polyethylene terephthalate (PET), poly Butylene terephthalate (PBT), polysilane (polysilane), polysiloxane (polysiloxane), polysilazane (polysilazane), polycarbosilane (polycarbosilane), polyacrylate (polyacrylate), polymethacrylate (polymethacrylate), polymethyl Acrylate (polymethylacrylate), polymethylmethacrylate (polymethylmethacrylate), polyethylacrylate (polyethylacrylate), polyethylmethacrylate (polyethylmethacrylate), cyclic olefin copolymer (COC), cyclic olefin polymer (COP), polyethylene (PE), polypropylene (PP), polyimide (PI), polymethyl methacrylate (PMMA), polystyrene (PS), polyacetal (POM), polyether ether ketone (PEEK), polyester sulfone (PES) , polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polycarbonate (PC), polyvinylidene fluoride (PVDF), perfluoroalkyl polymer (PFA), styrene-acrylnitrile copolymer (SAN) and combinations thereof.

A buffer layer may be further disposed on the flexible substrate 410 . The buffer layer may prevent penetration of external moisture or other impurities through the flexible substrate 410 and may planarize the surface of the flexible substrate 410 . The buffer layer is not a necessary configuration and may be deleted depending on the type of the thin film transistor 420 disposed on the flexible substrate 410 .

The thin film transistor 420 disposed on the flexible substrate 410 includes a gate electrode 422 , a source electrode 424 , a drain electrode 426 , and a semiconductor layer 428 .

The semiconductor layer 428 has better mobility than amorphous silicon or amorphous silicon, so it has low energy consumption and excellent reliability. Polycrystalline silicon that can be applied to a driving thin film transistor in a pixel ), but is not limited thereto.

In addition, the semiconductor layer may be formed of an oxide semiconductor. Oxide semiconductors have excellent mobility and uniformity. The oxide semiconductor is an indium tin gallium zinc oxide (InSnGaZnO)-based material that is a quaternary metal oxide, an indium gallium zinc oxide (InGaZnO)-based material that is a ternary metal oxide, an indium tin zinc oxide (InSnZnO)-based material, and an indium aluminum zinc oxide (InAlZnO)-based material. )-based material, tin gallium zinc oxide (SnGaZnO)-based material, aluminum gallium zinc oxide (AlGaZnO)-based material, tin-aluminum zinc oxide (SnAlZnO)-based material, binary metal oxide indium zinc oxide (InZnO)-based material, tin zinc Oxide (SnZnO)-based material, aluminum zinc oxide (AlZnO)-based material, zinc magnesium oxide (ZnMgO)-based material, tin magnesium oxide (SnMgO)-based material, indium magnesium oxide (InMgO)-based material, indium gallium oxide (InGaO)-based material The semiconductor layer 428 may be formed of a material, an indium oxide (InO)-based material, a tin oxide (SnO)-based material, a zinc oxide (ZnO)-based material, or the like, and the composition ratio of each element is not limited.

The semiconductor layer 428 may include a source region including p-type or n-type impurities, a drain region, and a channel between the source region and the drain region. A lightly doped region may be further included between the adjacent source and drain regions.

The source region and the drain region are regions heavily doped with impurities, and are regions to which the source electrode 424 and the drain electrode 426 of the thin film transistor 420 are respectively connected. The impurity ion may use a p-type impurity or an n-type impurity, and the p-type impurity may be one of boron (B), aluminum (Al), gallium (Ga), and indium (In), and the n-type impurity is phosphorus ( P), arsenic (As) and antimony (Sb) may be one.

The semiconductor layer 428 may be doped with an n-type impurity or a p-type impurity depending on the structure of the NMOS or PMOS thin film transistor, and the thin film transistor included in the electroluminescent display according to the embodiment of the present invention is an NMOS. Alternatively, a thin film transistor of a PMOS is applicable.

The first insulating layer 431 is an insulating layer composed of a single layer of silicon oxide (SiOx) or silicon nitride (SiNx) or multiple layers thereof, and the current flowing through the semiconductor layer 428 does not flow to the gate electrode 422 . placed so that In addition, silicon oxide has lower ductility than metal, but superior ductility compared to silicon nitride, and may be formed as a single layer or a plurality of layers according to its characteristics.

The gate electrode 422 serves as a switch for turning on or off the thin film transistor 420 based on an electrical signal transmitted from the outside through the gate line, and a conductive metal Phosphorus copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), etc., or an alloy thereof as a single layer Or it may be composed of multiple layers, but is not limited thereto.

The source electrode 424 and the drain electrode 426 are connected to the data line so that an electric signal transmitted from the outside is transmitted from the thin film transistor 420 to the light emitting device 440 . The source electrode 424 and the drain electrode 426 are conductive metals copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and a metal material such as neodymium (Nd) or an alloy thereof may be configured as a single layer or multiple layers, but is not limited thereto.

In order to insulate the gate electrode 422, the source electrode 424, and the drain electrode 426 from each other, a second insulating layer 433 composed of a single or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx) is gated. It may be disposed between the electrode 422 and the source electrode 424 and the drain electrode 426 .

A passivation layer including an inorganic insulating layer such as silicon oxide (SiOx) or silicon nitride (SiNx) may be further disposed on the thin film transistor 420 . The passivation layer may serve to prevent unnecessary electrical connection between components disposed above and below the passivation layer and to prevent contamination or damage from the outside, and the configuration of the thin film transistor 420 and the light emitting device 440 . and may be omitted depending on characteristics.

The thin film transistor 420 may be classified into an inverted staggered structure and a coplanar structure according to positions of components constituting the thin film transistor 420 . In the thin film transistor of the inverted staggered structure, the gate electrode is positioned opposite the source electrode and the drain electrode with respect to the semiconductor layer. As shown in FIG. 4A , in the thin film transistor 420 having a coplanar structure, the gate electrode 422 is positioned on the same side as the source electrode 424 and the drain electrode 426 with respect to the semiconductor layer 428 .

Although the thin film transistor 420 having a coplanar structure is illustrated in FIG. 4A , the electroluminescence display 400 may include a thin film transistor having an inverted staggered structure.

For convenience of description, only the driving thin film transistor is shown among various thin film transistors that may be included in the electroluminescent display device 400 , and a switching thin film transistor and a capacitor may also be included in the electroluminescent display device 400 . And, when a signal is applied from the gate line to the switching thin film transistor, the signal from the data line is transferred to the gate electrode of the driving thin film transistor. The driving thin film transistor transmits a current transmitted through the power wiring according to a signal received from the switching thin film transistor to the anode 442 , and controls light emission by the current transmitted to the anode 442 .

The thin film transistor 420 is protected, the step difference generated by the thin film transistor 420 is alleviated, and the parasitic capacitance generated between the thin film transistor 420 and the gate line and the data line and the light emitting devices 440 (Parasitic-) To reduce capacitance, planarization layers 435 and 437 are disposed on the thin film transistor 420 .

The planarization layers 435 and 437 are acrylic resin, epoxy resin, phenolic resin, polyamides resin, polyimides resin, unsaturated polyester It may be formed of at least one material of Unsaturated Polyesters Resin, Polyphenylene Resin, Polyphenylenesulfides Resin, and Benzocyclobutene, but is not limited thereto.

The electroluminescence display 400 according to the embodiment of the present specification may include a first planarization layer 435 and a second planarization layer 437 which are a plurality of planarization layers 435 and 437 sequentially stacked. A first planarization layer 435 may be stacked and disposed on the thin film transistor 420 , and a second planarization layer 437 may be sequentially stacked on the first planarization layer 435 .

A buffer layer may be disposed on the first planarization layer 435 . The buffer layer is disposed to protect a component disposed on the first planarization layer 435 , a single layer of silicon nitride (SiNx) or silicon oxide (SiOx), or multiple layers of silicon nitride (SiNx) or silicon oxide (SiOx). It may be composed of a layer, and may be omitted depending on the configuration and characteristics of the thin film transistor 420 and the light emitting device 440 .

The intermediate electrode 430 is connected to the thin film transistor 420 through a contact hole formed in the first planarization layer 435 . The intermediate electrode 430 may be stacked to be connected to the thin film transistor 420 so that the data line may also have a multi-layer structure.

Since the data line may be formed in a structure in which a lower layer made of the same material as the source electrode 424 and the drain electrode 426 and an upper layer made of the same material as the intermediate electrode 430 are connected, the two layers are connected in parallel with each other. Since the raw data line can be implemented, the wiring resistance of the data line can be reduced.

A passivation layer including an inorganic insulating layer such as silicon oxide (SiOx) or silicon nitride (SiNx) may be further disposed on the first planarization layer 435 and the intermediate electrode 430 . The passivation layer may serve to prevent unnecessary electrical connection between components and to prevent contamination or damage from the outside, and may be omitted depending on the configuration and characteristics of the thin film transistor 420 and the light emitting device 440 .

The light emitting device 440 disposed on the second planarization layer 437 includes an anode 442 , a light emitting unit 444 , and a cathode 446 .

The anode 442 may be disposed on the second planarization layer 437 . The anode 442 is an electrode serving to supply holes to the light emitting part 444 , and is connected to the intermediate electrode 430 through a contact hole in the second planarization layer 437 , and is electrically connected to the thin film transistor 420 . is connected to

The anode 442 may be made of indium tin oxide (ITO), indium zinc oxide (IZO), or the like, which are transparent conductive materials, but is not limited thereto.

When the electroluminescent display device 400 is a top emission that emits light to an upper portion where the cathode 446 is disposed, the emitted light is reflected from the anode 442 and the cathode 446 is disposed more smoothly It may further include a reflective layer to be emitted in an upward direction.

The anode 442 may have a two-layer structure in which a transparent conductive layer and a reflective layer made of a transparent conductive material are sequentially stacked or a three-layer structure in which a transparent conductive layer, a reflective layer, and a transparent conductive layer are sequentially stacked, and the reflective layer is silver (Ag) Or it may be an alloy containing silver.

The bank 450 disposed on the anode 442 and the second planarization layer 437 may define a pixel by dividing an area that actually emits light. After photoresist is formed on the anode 442 , the bank 450 is formed by photolithography. The photoresist refers to a photosensitive resin whose solubility in a developer is changed by the action of light, and a specific pattern can be obtained by exposing and developing the photoresist. The photoresist may be classified into a positive photoresist and a negative photoresist. The positive photoresist refers to a photoresist in which the solubility of the exposed portion in the developer is increased by exposure, and when the positive photoresist is developed, a pattern in which the exposed portion is removed is obtained. In addition, the negative photoresist refers to a photoresist whose solubility in the developer of the exposed portion is greatly reduced by exposure, and when the negative photoresist is developed, a pattern in which the unexposed portion is removed is obtained.

In order to form the light emitting part 444 of the light emitting device 440 , a fine metal mask (FMM), which is a deposition mask, may be used. In addition, in order to prevent damage that may be caused by contact with the deposition mask disposed on the bank 450 and to maintain a constant distance between the bank 450 and the deposition mask, a transparent organic material polyi is placed on the bank 450 . A spacer 452 composed of one of mide, photoacryl and benzocyclobutene (BCB) may be disposed.

A light emitting part 444 is disposed between the anode 442 and the cathode 446 . The light emitting unit 444 serves to emit light, and includes a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer, an electron transport layer (ETL), and an electron injection layer. (Electron Injection Layer; EIL) may include at least one layer, and some components of the light emitting unit 444 may be omitted depending on the structure or characteristics of the electroluminescent display device 400 . Here, as the light emitting layer, it is also possible to apply an electroluminescent layer and an inorganic light emitting layer.

The hole injection layer is disposed on the anode 442 and serves to facilitate hole injection. The hole injection layer is HAT-CN (dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10.11-hexacarbonitrile), CuPc (phthalocyanine), and NPD (N, N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine).

The hole transport layer is disposed on the hole injection layer to smoothly transfer holes to the light emitting layer. The hole transport layer is NPD (N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine), TPD (N,N'-bis-(3- methylphenyl)-N,N'-bis-(phenyl)-benzidine), s-TAD(2,2',7,7'-tetrakis(N,N-dimethylamino)-9,9-spirofluorene), and MTDATA ( 4,4',4"-Tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine).

The light emitting layer is disposed on the hole transport layer and includes a material capable of emitting light of a specific color to emit light of a specific color. In addition, the light emitting material may be formed using a phosphorescent material or a fluorescent material.

When the emission layer emits red light, the emission peak wavelength may be in the range of 600 nm to 650 nm, and CBP (4,4'-bis(carbazol-9-yl)biphenyl) or mCP(1,3) -bis(carbazol-9-yl)benzene) containing host material, PIQIr(acac)(bis(1-phenylisoquinoline)(acetylacetonate) iridium), PQIr(acac)(bis(1-phenylquinoline)(acetylacetonate) ) iridium), PQIr (tris(1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum). Alternatively, it may be made of a fluorescent material including PBD:Eu(DBM)3(Phen) or Perylene.

Here, the peak wavelength λmax refers to the maximum wavelength of EL (ElectroLuminescence). The wavelength at which the light emitting layers constituting the light emitting part emits unique light is called PL (PhotoLuminescence), and the light emitted by the thickness or optical characteristics of the layers constituting the light emitting layers is called the emittance. In this case, EL (ElectroLuminescence) refers to light finally emitted by the electroluminescent display device, and may be expressed as a product of PL (PhotoLuminescence) and an emittance (Emittance).

When the emission layer emits green light, the emission peak wavelength may be in the range of 520 nm to 540 nm, and includes a host material including CBP or mCP, and Ir(ppy)3(tris(2-phenylpyridine)iridium ) may be made of a phosphorescent material including a dopant material such as an Ir complex containing. In addition, it may be made of a fluorescent material including Alq3 (tris(8-hydroxyquinolino)aluminum).

When the emission layer emits blue light, the emission peak wavelength may be in the range of 440 nm to 480 nm, and includes a host material including CBP or mCP, and FIrPic(bis(3,5-difluoro-2) -(2-pyridyl)phenyl-(2-carboxypyridyl)iridium) may be made of a phosphorescent material including a dopant material, and spiro-DPVBi(4,4'-Bis(2,2-diphenyl-ethen) -1-yl)biphenyl), DSA (1-4-di-[4-(N,N-di-phenyl)amino]styryl-benzene), PFO (polyfluorene)-based polymer, or PPV (polyphenylenevinylene)-based polymer It may be made of a fluorescent material including one.

The electron transport layer is disposed on the light emitting layer to facilitate the movement of electrons to the light emitting layer. The electron transport layer is Liq(8-hydroxyquinolinolato-lithium), PBD(2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), TAZ(3-(4-biphenyl) )4-phenyl-5-tert-butylphenyl-1,2,4-triazole), spiro-PBD, BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline) and BAlq(bis(2) -methyl-8-quinolinolate)-4-(phenylphenolato)aluminum).

An electron injection layer may be further disposed on the electron transport layer. The electron injection layer is an organic layer that facilitates injection of electrons from the cathode 446 , and may be omitted depending on the structure and characteristics of the electroluminescent display 400 . The electron injection layer may be a metal inorganic compound such as BaF2, LiF, NaCl, CsF, Li2O and BaO, and HAT-CN (dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3, 6,7,10.11-hexacarbonitrile), CuPc (phthalocyanine), and NPD (N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine) It may be one or more organic compounds.

By further disposing an electron blocking layer or a hole blocking layer that blocks the flow of holes or electrons at a position adjacent to the light emitting layer, when electrons are injected into the light emitting layer, they move from the light emitting layer and pass through the adjacent hole transport layer or When a hole is injected into the light emitting layer, it is possible to prevent a phenomenon that the hole moves from the light emitting layer and passes to the adjacent electron transport layer, thereby improving the luminous efficiency.

The cathode 446 is disposed on the light emitting unit 444 and serves to supply electrons to the light emitting unit 444 . Since the cathode 446 needs to supply electrons, it may be made of a metal material such as magnesium (Mg), silver-magnesium (Ag:Mg), which is a conductive material having a low work function, but is not limited thereto.

When the electroluminescent display device 400 is a top emission type, the cathode 446 includes indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide ( It may be a transparent conductive oxide based on zinc oxide (ZnO) and tin oxide (TiO).

On the light emitting device 440 , the thin film transistor 420 and the light emitting device 440 , which are components of the electroluminescent display 400 , are encapsulated to prevent oxidation or damage due to moisture, oxygen, or impurities introduced from the outside. The unit 460 may be disposed, and a plurality of encapsulation layers, a foreign material compensation layer, and a plurality of barrier films may be stacked to form the stack.

The encapsulation layer is disposed on the upper surface of the thin film transistor 420 and the light emitting device 440 , and may be made of one of inorganic silicon nitride (SiNx) or aluminum oxide (AlyOz), but is not limited thereto. An encapsulation layer may be further disposed on the foreign material compensation layer disposed on the encapsulation layer.

The foreign material compensation layer is disposed on the encapsulation layer, and an organic silicone oxycarbon (SiOCz), acryl or epoxy-based resin may be used, but is not limited thereto, and may be generated during the process. When a defect occurs due to a crack generated by a foreign substance or particle, it can be compensated by being covered with a bending and foreign substance by the foreign material compensation layer.

By disposing a barrier film on the encapsulation layer and the foreign material compensation layer, the electroluminescence display 400 may delay penetration of oxygen and moisture from the outside. The barrier film is configured in the form of a film having light-transmitting and double-sided adhesiveness, and may be composed of any one insulating material of olefin-based, acrylic-based, and silicone-based insulating materials, or COP (Cyclolefin). Polymer), COC (Cycloolefin Copolymer), and PC (Polycarbonate) may be further laminated with a barrier film composed of any one material, but is not limited thereto.

FIG. 4B is a detailed structural cross-section II-II′ of the bending region B/A described in FIG. 3 .

Some components of FIG. 4B are substantially the same as/similar to those described with reference to FIG. 4A, and a description thereof will be omitted.

The gate signal and the data signal described with reference to FIGS. 1 to 3 are the pixels disposed in the display area A/A through circuit wiring disposed in the non-display area N/A of the electroluminescent display device 400 from the outside. transmitted to the light source.

When the wiring disposed in the non-display area N/A including the bending area B/A of the electroluminescent display device 400 is formed in a single-layer structure, a large amount of space for disposing the wiring is required. After depositing the conductive material, the conductive material is patterned in the shape of the wiring to be formed by a process such as etching. Since the precision of the etching process is limited, a lot of space is required due to the limitation to narrow the gap between the wirings, Since the area of the non-display area N/A is increased, it may be difficult to implement a narrow bezel.

In addition, when a single wire is used to transmit one signal, the corresponding signal may not be transmitted when a crack occurs in the corresponding wire. In the process of bending the substrate 410 , a crack may be generated in the wiring itself, or a crack may be generated in another layer and the crack may propagate to the wiring. As such, when a crack occurs in the wiring, the signal to be transmitted may not be transmitted.

Accordingly, the wiring disposed in the bending area B/A of the electroluminescence display 400 according to the embodiment of the present specification is disposed as a double wiring of the first wiring 462 and the second wiring 464 .

The first wiring 462 and the second wiring 464 may be formed of a conductive material, and may be formed of a conductive material having excellent ductility to reduce cracks from occurring when the flexible substrate 410 is bent. The first wiring 462 and the second wiring 464 may be formed of a conductive material having excellent ductility, such as gold (Au), silver (Ag), or aluminum (Al), and used in the display area A/A. It can be formed of one of various conductive materials such as molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and silver (Ag) and magnesium (Mg). ) may also be composed of an alloy or the like. In addition, the first wiring 462 and the second wiring 464 may have a multi-layer structure including various conductive materials, and may have a three-layer structure of titanium (Ti)/aluminum (Al)/titanium (Ti). may, but is not limited thereto.

In order to protect the first wiring 462 and the second wiring 464 , a buffer layer made of an inorganic insulating layer may be disposed below the first wiring 462 and the second wiring 464 , and the first wiring 462 . ) and a passivation layer made of an inorganic insulating layer to surround the top and side portions of the second wiring 464 , so that the first wiring 462 and the second wiring 464 react with moisture to prevent corrosion, etc. it might be

The first wiring 462 and the second wiring 464 formed in the bending area B/A receive a tensile force when bent. As described in FIG. 3 , the wiring extending in the same direction as the bending direction on the substrate 410 receives the greatest tensile force, and cracks may occur. If the cracks are severe, disconnection may occur. Accordingly, rather than forming the wiring to extend in the bending direction, at least a portion of the wiring disposed including the bending region B/A is formed to extend in a diagonal direction that is different from the bending direction, thereby minimizing the tensile force and thus cracking. occurrence can be reduced. The shape of the wiring may be a rhombus shape, a triangular wave shape, a sine wave shape, a trapezoid shape, or the like, but is not limited thereto.

A first wiring 462 is disposed on the substrate 410 , and a first planarization layer 435 is disposed on the first wiring 462 . A second wire 464 is disposed on the first planarization layer 435 , and a second planarization layer 437 is disposed on the second wire 464 .

The first planarization layer 435 and the second planarization layer 437 include an acrylic resin, an epoxy resin, a phenolic resin, a polyamides resin, and a polyimide-based resin. (Polyimides Resin), Unsaturated Polyesters Resin, Polyphenylene Resin, Polyphenylenesulfides Resin, and Benzocyclobutene. may, but is not limited thereto.

A micro coating layer 466 is disposed on the second planarization layer 437 . Since the micro-coating layer 466 may generate cracks due to tensile force acting on the wiring portion disposed on the substrate 410 during bending, coating the resin with a thin thickness at the bending position to protect the wiring. It plays a role, and the characteristics and structure will be described in detail in FIGS. 5A and 5B .

5A and 5B are cross-sectional views and enlarged views of a bending region of a flexible electroluminescent display device according to an embodiment of the present specification.

Referring to FIG. 5A , a barrier film 520 is disposed on the flexible substrate 510 . The barrier film 520 is a component for protecting various components of the flexible electroluminescent display device 500 , and may be disposed to correspond to at least the display area A/A of the flexible electroluminescent display device 500 . The barrier film 520 is not a necessary configuration and may be deleted depending on the structure of the electroluminescent display device 500 .

The barrier film 520 may include a material having an adhesive property, and the material having the adhesive property may be a thermosetting type or a natural curing type adhesive, and may be composed of a material such as PSA (Pressure Sensitive Adhesive). It may serve to fix the polarizing plate 530 on the barrier film 520 .

The polarizing plate 530 disposed on the barrier film 520 suppresses reflection of external light on the display area A/A. When the display device 500 is used outside, external natural light may be introduced and reflected by a reflective plate included in the anode of the EL device, or may be reflected by an electrode made of a metal disposed under the EL device. The image of the display device 500 may not be easily recognized by the reflected lights. The polarizing plate 530 polarizes the light introduced from the outside in a specific direction, and prevents the reflected light from being emitted to the outside of the display device 500 again. The polarizing plate 530 may be disposed on the display area A/A, but is not limited thereto.

The polarizing plate 530 may be a polarizing plate composed of a polarizer and a protective film protecting the polarizer, or may be formed by coating a polarizing material for flexibility.

A cover glass (CG) that protects the exterior of the display device 500 by disposing an adhesive layer on the polarizing plate 530 may be attached and disposed.

A back plate 540 is disposed under the flexible substrate 510 . When the flexible substrate 510 is made of a plastic material such as polyimide, the flexible electroluminescence display 500 manufacturing process proceeds in a situation where a support substrate made of glass is disposed under the flexible substrate 510, and the manufacturing process is After completion, the support substrate may be separated and released.

Since components for supporting the flexible substrate 510 are required even after the supporting substrate is released, a back plate 540 for supporting the flexible substrate 510 may be disposed under the flexible substrate 510 . The backplate 540 may be disposed adjacent to the bending area B/A in another area of the flexible substrate 510 except for the bending area B/A.

The back plate 540 may be formed of a plastic thin film formed of polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polymers, a combination of these polymers, or the like.

A support member 570 is disposed between the two backplates 540 , and the support member 570 may be adhered to the backplate 540 by an adhesive layer 560 .

The support member 570 may be formed of a plastic material such as polycarbonate (PC), polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polymers, combinations of these polymers, or the like. The strength of the support member 570 formed of these plastic materials may be controlled by adding additives to increase the thickness and strength of the support member 570, and may be glass, ceramic, metal or other rigid (Rigid). ) materials or combinations of the aforementioned materials.

A micro-coating layer 550 is disposed on the bending area B/A of the flexible substrate 510 . The micro coating layer 550 may be formed to cover one side of the barrier film 520 .

Since the micro-coating layer 550 may generate cracks due to tensile force acting on the wiring portion disposed on the flexible substrate 510 during bending, the resin is formed in a thin thickness at the bending position to protect the wiring. can do. The micro-coating layer 550 may be made of an acrylic material such as an acrylate polymer.

The micro-coating layer 550 may adjust the neutral plane of the bending region B/A. When the structure is bent, the neutral plane may refer to a virtual surface in which a compressive force and a tensile force applied to the structure cancel each other and thus do not receive stress. When two or more structures are stacked, a virtual neutral plane may be formed between the structures. When the entire structure is bent in one direction, the structures disposed in the bending direction with respect to the neutral plane are compressed by bending and thus receive a compressive force. Conversely, structures disposed in the direction opposite to the bending direction with respect to the neutral plane are stretched by bending and thus receive a tensile force. And, since the structures are more fragile when subjected to tensile force among the same compressive and tensile forces, cracks are more likely to occur when subjected to tensile force.

The flexible substrate 510 disposed on the lower side with respect to the neutral plane is compressed and thus receives a compressive force, and the wires disposed on the upper part may receive a tensile force, and cracks may occur due to the tensile force. Therefore, in order to minimize the tensile force applied to the wiring, it may be positioned on the neutral plane.

By disposing the micro-coating layer 550 on the bending area B/A, the neutral plane can be raised upward, and the neutral plane is formed at the same position as the wiring or is positioned higher than the neutral plane to reduce stress during bending. It is possible to suppress the occurrence of cracks by not receiving or receiving compressive force.

In order to minimize the bezel area and reduce the thickness of the display device, in the electroluminescent display device 500, the bending area B/A of the flexible substrate 510 has an extreme curvature, and the thickness of the micro-coating layer 550 can also be minimized. have. The micro-coating layer 550 composed of a polymer single layer of acrylate may have cracks on the surface in the bending region B/A, which may cause defects.

The micro-coating layer 550 must have good elongation and secure robustness so that it can be bent well, but elongation and robustness are in a trade-off relationship, and accordingly, when forming the micro-coating layer 550 with extreme curvature Cracks may occur on the surface due to the limitation of robustness.

The micro-coating layer 550 included in the flexible electroluminescent display device 500 according to the embodiment of the present specification is composed of a plurality of layers in which graphene layers are disposed on the surfaces of the upper and lower surfaces, thereby providing both elongation and robustness. A satisfactory flexible electroluminescent display device 500 was invented.

Graphite has a structure in which carbon (C) is stacked layer by layer in a hexagonal honeycomb shape.

The strength of graphene is more than 200 times stronger than that of iron (Fe), and it has very excellent elasticity. Such graphene characteristics are formed on the upper and lower surfaces of the micro-coating layer 550 to reduce the thickness of the display device even at the extreme curvature of the bending region B/A. The surface of the micro-coating layer 550 has a minimized thickness. It has the effect of preventing cracks that may occur in

The characteristics and structure of the micro coating layer 550 included in the flexible electroluminescent display 500 will be described in detail with reference to FIG. 5B .

An insulating film 580 is connected to an end of the flexible substrate 510 . Various wirings for transmitting signals to pixels disposed in the display area A/A are formed on the insulating film 580 . The insulating film 580 is formed of a material having flexibility so that it can be bent. A driving device may be mounted on the insulating film 580 , and a driving package such as a chip on film (COF) is formed together with the insulating film 580 , and formed on the insulating film 580 . It is connected to the wiring to provide a driving signal and data to the pixels disposed in the display area A/A.

The circuit board connected to the insulating film 580 may receive an image signal from the outside and apply various signals to pixels disposed in the display area A/A, and may be a printed circuit board.

5B is an enlarged view of region A in a cross-sectional view of a bending region of the flexible electroluminescent display device according to the embodiment of the present specification described with reference to FIG. 5A.

Some components of FIG. 5B are substantially the same as/similar to those described with reference to FIG. 5A, and detailed description thereof will be omitted.

Referring to FIG. 5B , the micro-coating layer 550 includes a first micro-coating layer 550a, a second micro-coating layer 550b, and a third micro-coating layer 550c.

As illustrated in FIG. 4B , micro coating layers 550a , 550b , and 550c composed of a plurality of layers are disposed on the bending area B/A in which a plurality of wirings and planarization layers are disposed on the flexible substrate 510 . do.

The first micro-coating layer 550a may be formed of an acrylate polymer that is a resin to prevent cracks in the wiring and the planarization layer disposed on the flexible substrate 510 during bending.

When the structure is bent, the neutral plane may refer to a virtual surface in which a compressive force and a tensile force applied to the structure cancel each other and thus do not receive stress. When two or more structures are stacked, a virtual neutral plane may be formed between the structures. When the entire structure is bent in one direction, the structures disposed in the bending direction with respect to the neutral plane are compressed by bending and thus receive a compressive force. Conversely, structures disposed in the direction opposite to the bending direction with respect to the neutral plane are stretched by bending and thus receive a tensile force. And, since the structures are more fragile when subjected to tensile force among the same compressive and tensile forces, cracks are more likely to occur when subjected to tensile force.

The flexible substrate 510 disposed on the lower side with respect to the neutral plane is compressed and thus receives a compressive force, and the wires disposed on the upper part may receive a tensile force, and cracks may occur due to the tensile force. Therefore, in order to minimize the tensile force applied to the wiring, it may be positioned on the neutral plane.

By disposing the first micro-coating layer 550a on the bending region B/A, the neutral plane can be raised upward, and the neutral plane is formed at the same position as the wiring or is positioned higher than the neutral plane when bending. Cracking can be suppressed by being subjected to no stress or compressive force.

A second micro-coating layer 550b made of graphene is disposed on the upper and lower surfaces of the first micro-coating layer 550a. The strength of graphene is more than 200 times stronger than that of iron (Fe), and it has very excellent elasticity. The first micro-coating layer 550b to which the properties of graphene is applied is coated on the upper and lower surfaces of the first micro-coating layer 550a to have an extreme curvature of the bending region B/A and a minimized thickness. There is an effect of preventing cracks that may be generated in the coating layer 550a.

In addition, the bending area B/A does not have a constant curvature, and an area having an extreme curvature value may be generated according to the position of the bending area B/A. In a region having an extreme curvature value, cracks may be more likely to occur than in other regions. Since the third micro-coating layer 550c is formed by injecting graphene into the first micro-coating layer 550a in this region, the first micro-coating layer 550a may be further reinforced to protect it from cracks. The third micro-coating layer 550c may be injected into the first micro-coating layer 550a and positioned between the second micro-coating layers 550b.

A flexible electroluminescent display device according to an embodiment of the present invention includes a flexible substrate including a display area and a bent area extending from one side of the display area, a thin film transistor and a light emitting device disposed on the display area, a display area and bending and a micro-coating layer disposed on the planarization layer of the wiring and the planarization layer of the bending area, and the micro-coating layer is composed of a plurality of layers, and at least one layer of the micro-coating layer is composed of graphene do.

The micro-coating layer of the flexible electroluminescent display device according to an embodiment of the present invention is composed of an upper layer, an intermediate layer, and a lower layer, and the upper layer and the lower layer are composed of graphene.

The intermediate layer of the flexible electroluminescent display device according to an embodiment of the present invention is made of an acrylate polymer.

The intermediate layer of the flexible electroluminescent display device according to an embodiment of the present invention further includes a graphene layer connecting the upper and lower layers.

The wiring of the flexible electroluminescent display device according to an embodiment of the present invention is composed of a plurality of metal layers.

A thin film transistor of a flexible electroluminescent display device according to an embodiment of the present invention includes a semiconductor layer, a source electrode, a drain electrode, and a gate electrode.

The planarization layer of the flexible electroluminescent display device according to an embodiment of the present invention is composed of a plurality of organic material layers.

A wiring is disposed on each of the flexible substrate and the planarization layer of the flexible electroluminescent display device according to an embodiment of the present invention.

A light emitting device of a flexible electroluminescent display device according to an embodiment of the present invention includes an anode, a light emitting unit, and a cathode.

A back plate is disposed on the lower surface of the flexible substrate of the flexible electroluminescent display device according to the embodiment of the present invention.

The back plate of the flexible electroluminescent display device according to an embodiment of the present invention is composed of one of polyimide, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET).

A driving element is disposed on the insulating film connected to the flexible substrate of the flexible electroluminescent display device according to an embodiment of the present invention, and the insulating film.

A flexible electroluminescent display device according to an embodiment of the present invention includes a flexible substrate including a display area including emitting pixels, a non-display area having a bending area outside the display area, and a non-display area including a display area and a bending area. It includes a micro-coating layer disposed on the flattening layer of the wiring and the planarization layer of the display area, and the bending area, and a layer made of graphene is disposed on the upper and lower surfaces of the micro-coating layer to prevent cracks in the micro-coating layer. prevent.

The micro-coating layer of the flexible electroluminescent display device according to an embodiment of the present invention is composed of an acrylate polymer.

The micro-coating layer of the flexible electroluminescent display device according to an embodiment of the present invention further includes a graphene layer that connects the graphene layers disposed on the upper and lower surfaces to each other.

A pixel of a flexible electroluminescent display device according to an embodiment of the present invention emits light through a thin film transistor and a light emitting device.

A light emitting device of a flexible electroluminescent display device according to an embodiment of the present invention includes an anode, a light emitting unit, and a cathode.

The planarization layer of the flexible electroluminescent display device according to an embodiment of the present invention is composed of a plurality of organic material layers.

A wiring is disposed on each of the flexible substrate and the planarization layer of the flexible electroluminescent display device according to an embodiment of the present invention.

A back plate is disposed on the lower surface of the flexible substrate of the flexible electroluminescent display device according to the embodiment of the present invention.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed by the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100, 200, 300, 400, 500: electroluminescent display device
110: image processing unit
120: timing controller
130: data driver
140: gate driver
150: display panel
160: pixel
220: gate line
230: data line
240: switching transistor
250: drive transistor
260: compensation circuit
270, 440: light emitting device
310, 410, 550: substrate
370: circuit wiring
390: gate driving unit
395: pad
420: thin film transistor
422: gate electrode
424: source electrode
426: drain electrode
428: semiconductor layer
431: first insulating layer
433: second insulating layer
435: first planarization layer
437: second planarization layer
442: anode
444: light emitting unit
446: cathode
450: bank
452: spacer
460: encapsulation unit
462: first wiring
464: second wiring
466, 550: micro coating layer
550a: first micro-coating layer
550b: second micro-coating layer
550c: third micro-coating layer
520: barrier film
530: polarizer
540: back plate
560: adhesive layer
570: support member
580: circuit board
A/A: display area
N/A: non-display area
B/A: bending area
S/L: scan line

Claims (20)

a flexible substrate including a display area and a bending area extending from one side of the display area and bent;
a thin film transistor and a light emitting device disposed on the display area;
a wiring and a planarization layer disposed on the display area and the bending area; and
and a micro-coating layer disposed on the planarization layer of the bending region,
The micro-coating layer is composed of a plurality of layers, and at least one layer of the micro-coating layer is composed of graphene,
The micro-coating layer is composed of an upper layer, an intermediate layer and a lower layer, and the upper layer and the lower layer are composed of the graphene,
The intermediate layer further comprises a graphene layer connecting the upper layer and the lower layer. delete The method of claim 1,
The intermediate layer is composed of an acrylate polymer, a flexible electroluminescent display. delete The method of claim 1,
The wiring is composed of a plurality of metal layers, a flexible electroluminescent display device. The method of claim 1,
The thin film transistor comprises a semiconductor layer, a source electrode, a drain electrode and a gate electrode, a flexible electroluminescent display device. The method of claim 1,
The planarization layer is composed of a plurality of organic material layers, a flexible electroluminescent display device. 8. The method of claim 7,
and the wiring is disposed on each of the flexible substrate and the planarization layer. The method of claim 1,
The light emitting device includes an anode, a light emitting unit and a cathode, a flexible electroluminescent display. The method of claim 1,
A flexible electroluminescent display device, wherein a back plate is disposed on a lower surface of the flexible substrate. 11. The method of claim 10,
The back plate is composed of one of polyimide, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), a flexible electroluminescent display device. The method of claim 1,
an insulating film connected to the flexible substrate; and
A driving element is disposed on the insulating film, a flexible electroluminescent display device. A flexible substrate comprising: a flexible substrate including a display area including emitting pixels and a non-display area having a bending area outside the display area;
a wiring and a planarization layer disposed in the non-display area including the display area and the bending area; and
and a micro-coating layer disposed on the planarization layer of the bending region,
A layer made of graphene is disposed on the upper and lower surfaces of the micro-coating layer to prevent cracks in the micro-coating layer,
The micro-coating layer further comprises a graphene layer connecting the graphene layers disposed on the upper surface and the lower surface to each other. 14. The method of claim 13,
The micro-coating layer is composed of an acrylate polymer, a flexible electroluminescent display. delete 14. The method of claim 13,
The pixel is a flexible electroluminescent display device that emits light through a thin film transistor and a light emitting element. 17. The method of claim 16,
The light emitting device includes an anode, a light emitting unit and a cathode, a flexible electroluminescent display. 14. The method of claim 13,
The planarization layer is composed of a plurality of organic material layers, a flexible electroluminescent display device. 19. The method of claim 18,
The wiring is disposed on each of the flexible substrate and the planarization layer, the flexible electroluminescent display device. 14. The method of claim 13,
A flexible electroluminescent display device, wherein a back plate is disposed on a lower surface of the flexible substrate.

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