KR102569736B1 - TOUCH-INTEGRATED Electroluminescent DISPLAY DEVICE - Google Patents

Abstract

A touch-embedded electroluminescent display device according to an embodiment of the present specification includes a substrate including a display area including pixels and a non-display area surrounding the display area, a thin film transistor and a light emitting element disposed on the display area, and a thin film transistor and a light emitting device. It includes an encapsulation part disposed on the element, and a touch electrode disposed on the encapsulation part, the touch electrode is composed of a metal layer having a metal mesh pattern, and an end of the touch electrode adjacent to the light emitting element has a tapered shape.

Description

Touch built-in electroluminescent display {TOUCH-INTEGRATED Electroluminescent DISPLAY DEVICE}

The present specification relates to a touch-embedded electroluminescence display, and more particularly, to a touch-embedded electroluminescence display that minimizes a color difference according to a viewing angle.

As we enter the full-fledged information age, the field of display devices that visually display electrical information signals is developing rapidly, and research is continuing to develop performance such as thinning, lightening, and low power consumption for various display devices.

Representative display devices include a liquid crystal display device (LCD), a field emission display device (FED), an electro-wetting display device (EWD), and an organic light emitting display device (Organic). Light Emitting Display Device (OLED) and the like.

An electroluminescent display device including an organic light emitting display device is a self-emissive display device and, unlike a liquid crystal display device, does not require a separate light source and can be manufactured in a lightweight and thin shape. In addition, the electroluminescent display device is not only advantageous in terms of power consumption due to low voltage driving, but also has excellent color reproduction, response speed, viewing angle, and contrast ratio (CR), and is expected to be used in various fields.

In an electroluminescent display device, an emissive layer (EML) using an organic material is disposed between two electrodes of an anode and a cathode. When holes from the anode are injected into the light emitting layer and electrons from the cathode are injected into the light emitting layer, the injected electrons and holes recombine with each other to form excitons in the light emitting layer and emit light.

The light emitting layer includes a host material and a dopant material, and interaction between the two materials occurs. The host serves to generate excitons from electrons and holes and transfers energy to the dopant, and the dopant is a dye organic material added in a small amount and serves to receive energy from the host and convert it into light.

An electroluminescent display device including a light emitting layer made of organic materials encapsulates the electroluminescent display device with glass, metal, or film so that moisture or oxygen is not released from the outside into the electroluminescent display device. By blocking the inflow, oxidation of the light emitting layer and the electrode is prevented, and it is protected from mechanical or physical impact applied from the outside.

As an input means of the display device, it is equipped with a touch screen panel that allows the user to directly input information on the screen of the display device using a finger or a pen, replacing conventional input means such as a mouse or keyboard. A single display device is increasingly being used in various fields.

In general, a touch screen panel disposed on the upper part of a display device converts a contact position directly contacted by a user's hand or an object into an electrical signal, and an instruction selected at the contact position is accepted as an input signal and displayed on the screen through the display device. indicated in However, there is a disadvantage in that the thickness of the entire display device increases when the touch screen panel is disposed above the display device.

In a recent display device, a structure in which a touch electrode is disposed on an encapsulation layer of the display device without disposing a touch screen panel on the upper portion of the display device is being developed. At this time, most of the touch electrodes on the encapsulation layer are made of metal, and there is a problem that the touch electrode disposed adjacent to the light emitting layer affects the optical path according to the viewing angle.

The inventors of the present specification recognize that a touch electrode disposed adjacent to a light emitting layer affects an optical path when a touch-embedded electroluminescent display device has a viewing angle over a certain range, and color difference is generated. The structure of the touch electrode disposed on the encapsulation layer Invented a touch-embedded electroluminescence display capable of increasing user readability by minimizing color difference according to viewing angle by improving

The tasks of the present specification are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.

A touch-embedded electroluminescent display device according to an embodiment of the present specification includes a substrate including a display area including pixels and a non-display area surrounding the display area, a thin film transistor and a light emitting element disposed on the display area, and a thin film transistor and a light emitting device. It includes an encapsulation part disposed on the element, and a touch electrode disposed on the encapsulation part, the touch electrode is composed of a metal layer having a metal mesh pattern, and an end of the touch electrode adjacent to the light emitting element has a tapered shape.

A touch-embedded electroluminescent display device according to an embodiment of the present specification includes a substrate including a display area and a non-display area surrounding the display area, a semiconductor layer disposed on the display area, and including a gate electrode and source/drain electrodes. A thin film transistor, a planarization layer disposed on the thin film transistor, a light emitting element disposed on the planarization layer on the display area and including an anode, a light emitting unit and a cathode, a plurality of encapsulation layers disposed on the light emitting element, and a foreign material compensation layer. It includes an encapsulation portion and a touch electrode disposed on the encapsulation portion, the touch electrode is composed of a metal layer of a metal mesh pattern, and the tip of the touch electrode adjacent to the light emitting element is composed of a tapered shape to improve the viewing angle. Improve the color difference according to

The touch-embedded electroluminescence display device according to the embodiment of the present specification has an effect of increasing user readability by minimizing a change in color difference according to a viewing angle by improving a structure of a touch electrode.

Effects of the flexible electroluminescent display device according to the exemplary embodiment of the present specification are not limited to those exemplified above, and various other effects are included in the present specification.

Since the content of the specification described in the problem to be solved, the problem solution, and the effect above does not specify the essential features of the claim, the scope of the claim is not limited by the matters described in the content of the specification.

1 is a block diagram of an electroluminescent display device according to an embodiment of the present specification.
2 is a circuit diagram of a pixel included in an electroluminescent display device according to an exemplary embodiment of the present specification.
3 is a plan view of a touch-embedded electroluminescent display device according to an exemplary embodiment of the present specification.
4 is a cross-sectional view of a touch-embedded electroluminescent display device according to an embodiment of the present specification.

Advantages and features of the present invention, and methods of achieving them, will become clear with reference to the detailed description of the following embodiments taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, only these embodiments make the disclosure of the present invention complete, and common knowledge in the art to which the present invention belongs. It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative, so the present invention is not limited to the details shown. Like reference numbers designate like elements throughout the specification. In addition, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. When 'includes', 'has', 'consists of', etc. mentioned in this specification is used, other parts may be added unless 'only' is used. In the case where a component is expressed in the singular, the case including the plural is included unless otherwise explicitly stated.

In interpreting the components, even if there is no separate explicit description, it is interpreted as including the error range.

In the case of a description of a positional relationship, for example, 'on top of', 'on top of', 'at the bottom of', 'next to', etc. Or, unless 'directly' is used, one or more other parts may be located between the two parts.

Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may also be the second component within the technical spirit of the present invention.

Each feature of the various embodiments of the present invention can be partially or entirely combined or combined with each other, technically various interlocking and driving are possible, and each embodiment can be implemented independently of each other or can be implemented together in a related relationship. may be

1 is a block diagram of an electroluminescent display device according to an embodiment of the present specification.

Referring to FIG. 1 , the electroluminescent display device 100 includes an image processor 110 , a timing controller 120 , a data driver 130 , a gate driver 140 and a display panel 150 .

The image processor 110 outputs a data enable signal DE along with the data signal DATA supplied from the outside. The image processing unit 110 may output one or more of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal in addition to the data enable signal DE.

The timing controller 120 receives a data signal DATA along with a data enable signal DE or a drive signal including a vertical sync signal, a horizontal sync signal, and a clock signal from the image processor 110 . The timing controller 120 generates a gate timing control signal (GDC) for controlling the operation timing of the gate driver 140 and a data timing control signal (DDC) for controlling the operation timing of the data driver 130 based on the driving signal. outputs

The data driver 130 samples and latches the data signal DATA supplied from the timing controller 120 in response to the data timing control signal DDC supplied from the timing controller 120, converts it into a gamma reference voltage, and outputs the result. . The data driver 130 outputs the data signal DATA through the data lines DL1 to DLn.

The gate driver 140 outputs a gate signal while shifting the level of the gate voltage in response to the gate timing control signal GDC supplied from the timing controller 120 . The gate driver 140 outputs a gate signal through the gate lines GL1 to GLm.

The display panel 150 displays an image while the pixels 160 emit light in response to the data signal DATA and the gate signal supplied from the data driver 130 and the gate driver 140 . The detailed structure of the pixel 160 is described with reference to FIGS. 2 and 4 .

2 is a circuit diagram of a pixel included in an electroluminescent display device according to an exemplary embodiment of the present specification.

Referring to FIG. 2 , the pixel of the electroluminescent display device 200 includes a switching transistor 240 , a driving transistor 250 , a compensation circuit 260 and a light emitting element 270 .

The light emitting element 270 operates to emit light according to the driving current formed by the driving transistor 250 .

The switching transistor 240 performs a switching operation so that a data signal supplied through the data line 230 is stored as a data voltage in a capacitor in response to a gate signal supplied through the gate line 220 .

The driving transistor 250 operates to allow a constant driving current to flow between the high potential power line VDD and the low potential power line GND in response to the data voltage stored in the capacitor.

The compensation circuit 260 is a circuit for compensating for the threshold voltage of the driving transistor 250, and the compensation circuit 260 includes one or more thin film transistors and capacitors. The composition of the compensation circuit can be very diverse according to the compensation method.

In addition, the pixel of the electroluminescent display device 200 is composed of a 2T (Transistor) 1C (Capacitor) structure including a switching transistor 240, a driving transistor 250, a capacitor, and a light emitting element 270, and a compensation circuit ( 260) can be formed in various ways such as 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, and 7T2C.

3 is a plan view of a touch-embedded electroluminescent display device according to an exemplary embodiment of the present specification.

Referring to FIG. 3 , the touch-embedded electroluminescent display device 300 includes an active area (A/A) in which pixels actually emitting light through thin film transistors and light emitting elements are disposed on a substrate 310, and a display area (A/A). A non-active area (N/A) surrounding the edge of the area A/A is included.

On the display area (A/A), pixels displaying an image while emitting light as described in FIGS. 1 and 2 are arranged, and on the pixels, the contact point directly contacted by the user's hand or object is converted into an electrical signal, and an instruction selected at the contact point is displayed. A touch electrode 370 for converting the content into an input signal is disposed. In this case, the pixel and the touch electrode 370 may overlap each other.

A detailed cross-sectional structure of the display area A/A will be described with reference to FIGS. 4 and 4B.

A mutual-capacitance type consisting of the touch electrode 370 configured such that the first touch electrode 372 and the second touch electrode 374 cross each other may be applied, but is not limited thereto.

The external shapes of the first touch electrode 372 and the second touch electrode 374 may have a plurality of diamond shapes. In this case, the first touch electrode 372 and the second touch electrode 374 may be formed of a metal layer having a metal mesh pattern, and may include conductive metals such as copper (Cu), aluminum (Al), and molybdenum (Mo). , chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), etc., but may be composed of a single layer or multiple layers of an alloy thereof, but is not limited thereto.

The first touch electrode 372 and the second touch electrode 374 may be disposed on the same layer, and in an area where the first touch electrode 372 and the second touch electrode 374 intersect, the second touch electrode ( 374 are separately disposed, and the separated second touch electrodes 374 may be connected by a touch connection electrode 376 .

In the non-display area N/A, various wires including the touch wire 378 and a pad part including the touch pad 380 are disposed.

The touch wiring 385 connects the touch electrode 370 disposed in the display area A/A and the touch pad 380. The touch pad 380 is connected to an external circuit to receive or transmit a touch signal from the outside.

4 is a cross-sectional view of a touch-embedded electroluminescent display device according to an embodiment of the present specification.

FIG. 4 is a cross-sectional view of the display area A/A described in FIG. 3 .

Referring to FIG. 4 , the substrate 410 serves to support and protect components of the electroluminescent display device 400 disposed thereon, and may be made of glass or metal. Recently, the substrate 410 may be a flexible substrate formed of a flexible material having flexible characteristics.

The flexible substrate may be in the form of a film containing one of the group consisting of polyester-based polymers, silicone-based polymers, acrylic-based polymers, polyolefin-based polymers, and copolymers thereof.

The substrate 410 may be formed of polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polysilane, polysiloxane, polysilazane, polycarbosilane, polyacrylate ( polyacrylate), polymethacrylate, polymethylacrylate, polymethylmethacrylate, polyethylacrylate, polyethylmethacrylate, cyclic olefin copolymer (COC), cyclic olefin polymer (COP), polyethylene (PE), polypropylene (PP), polyimide (PI), polymethyl methacrylate (PMMA), polystyrene (PS), polyacetal (POM), poly Etheretherketone (PEEK), Polyestersulfone (PES), Polytetrafluoroethylene (PTFE), Polyvinylchloride (PVC), Polycarbonate (PC), Polyvinylidenefluoride (PVDF), Perfluoroalkyl polymer (PFA), styrene acrylonitrile copolymer (SAN), and combinations thereof.

A buffer layer may be further disposed on the substrate 410 . The buffer layer can prevent penetration of moisture or other impurities through the substrate 410 and planarize the surface of the substrate 410 . Also, the buffer layer is not necessarily required, and may be omitted depending on the type of substrate 410 or the type of thin film transistor 420 disposed on the substrate 410 .

The thin film transistor 420 disposed on the substrate 410 includes a gate electrode 422 , a source electrode 424 , a drain electrode 426 and a semiconductor layer 428 .

The semiconductor layer 428 is amorphous silicon or polycrystalline silicon, which has better mobility than amorphous silicon, low energy consumption and excellent reliability, and can be applied to a driving thin film transistor in a pixel. ), but is not limited thereto.

And, the semiconductor layer may be composed of an oxide semiconductor. Oxide semiconductors have excellent mobility and uniformity. The oxide semiconductor is a quaternary metal oxide indium tin gallium zinc oxide (InSnGaZnO)-based material, a ternary metal oxide indium gallium zinc oxide (InGaZnO)-based material, indium tin zinc oxide (InSnZnO)-based material, indium aluminum zinc oxide (InAlZnO) ) based material, tin gallium zinc oxide (SnGaZnO) based material, aluminum gallium zinc oxide (AlGaZnO) based material, tin aluminum zinc oxide (SnAlZnO) based material, indium zinc oxide (InZnO) based material which is a binary metal oxide, tin zinc Oxide (SnZnO) based material, aluminum zinc oxide (AlZnO) based material, zinc magnesium oxide (ZnMgO) based material, tin magnesium oxide (SnMgO) based material, indium magnesium oxide (InMgO) based material, indium gallium oxide (InGaO) based The semiconductor layer 428 may be formed of an indium oxide (InO)-based material, a tin oxide (SnO)-based material, a zinc oxide (ZnO)-based material, or the like, and the composition ratio of each element is not limited.

The semiconductor layer 428 may include a source region including p-type or n-type impurities, a drain region, and a channel between the source region and the drain region. A lightly doped region may be included between adjacent source and drain regions.

The source region and the drain region are regions doped with impurities at a high concentration, and are regions where the source electrode 424 and the drain electrode 426 of the thin film transistor 420 are respectively connected. As the impurity ion, a p-type impurity or an n-type impurity may be used. The p-type impurity may be one of boron (B), aluminum (Al), gallium (Ga), and indium (In), and the n-type impurity may be phosphorus ( P), arsenic (As), and antimony (Sb).

Depending on the NMOS or PMOS thin film transistor structure of the semiconductor layer 428, the channel region may be doped with an n-type impurity or a p-type impurity. Alternatively, a thin film transistor of PMOS is applicable.

The first insulating layer 431 is an insulating layer composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), and current flowing through the semiconductor layer 428 does not flow to the gate electrode 422. placed so as not to In addition, silicon oxide has lower ductility than metal, but is superior in ductility to silicon nitride, and may be formed in a single layer or multiple layers depending on its characteristics.

The gate electrode 422 serves as a switch to turn on or turn off the thin film transistor 420 based on an electrical signal transmitted from the outside through a gate line, and is made of a conductive metal. Phosphorus copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd), etc., or a single layer of an alloy thereof Or it may be composed of multiple layers, but is not limited thereto.

The source electrode 424 and the drain electrode 426 are connected to the data line and allow electrical signals transferred from the outside to be transferred from the thin film transistor 420 to the light emitting element 440 . The source electrode 424 and the drain electrode 426 are made of conductive metal such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd), or a metal material or an alloy thereof, which may be configured as a single layer or multiple layers, but is not limited thereto.

In order to insulate the gate electrode 422, the source electrode 424, and the drain electrode 426 from each other, a second insulating layer 433 composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx) is provided as a gate. It may be disposed between the electrode 422 and the source electrode 424 and the drain electrode 426 .

A passivation layer composed of an inorganic insulating layer such as silicon oxide (SiOx) or silicon nitride (SiNx) may be further disposed on the thin film transistor 420 . The passivation layer may serve to prevent unnecessary electrical connection between passivation layer components and to prevent contamination or damage from the outside, and may be omitted depending on the configuration and characteristics of the thin film transistor 420 and the light emitting element 440. You may.

The thin film transistor 420 may be classified into an inverted staggered structure and a coplanar structure according to positions of components constituting the thin film transistor 420 . In the thin film transistor of the inverted staggered structure, the gate electrode is located on opposite sides of the source electrode and the drain electrode with respect to the semiconductor layer. As shown in FIG. 4 , in the thin film transistor 420 having a coplanar structure, the gate electrode 422 is located on the same side as the source electrode 424 and the drain electrode 426 with respect to the semiconductor layer 428 .

Although the thin film transistor 420 of the coplanar structure is shown in FIG. 4 , the electroluminescent display device 400 may include the thin film transistor of the inverted staggered structure.

For convenience of explanation, only a driving thin film transistor is shown among various thin film transistors that may be included in the electroluminescent display device 400, and switching thin film transistors and capacitors may also be included in the electroluminescent display device 400. And, when a signal is applied from the gate wiring, the switching thin film transistor transfers the signal from the data wiring to the gate electrode of the driving thin film transistor. The driving thin film transistor transfers the current transmitted through the power wiring to the anode 442 by the signal received from the switching thin film transistor, and controls light emission by the current transmitted to the anode 442 .

It protects the thin film transistor 420, alleviates the level difference caused by the thin film transistor 420, and parasitic capacitance generated between the thin film transistor 420, the gate line and data line, and the light emitting element 440 (parasitic capacitance) A planarization layer 435 is disposed on the thin film transistor 420 to reduce capacitance.

The planarization layer 435 includes acrylic resin, epoxy resin, phenolic resin, polyamides resin, polyimide resin, and unsaturated polyester resin. (Unsaturated Polyesters Resin), polyphenylene resin, polyphenylene sulfide resin (Polyphenylenesulfides Resin), and benzocyclobutene (Benzocyclobutene) may be formed of one or more materials, but is not limited thereto, and a plurality of It can also be composed of a planarization layer 435 .

A passivation layer composed of an inorganic insulating layer such as silicon oxide (SiOx) or silicon nitride (SiNx) may be further disposed on the planarization layer 435 . The passivation layer may serve to prevent unnecessary electrical connection between components and prevent contamination or damage from the outside, and may be omitted depending on the configuration and characteristics of the thin film transistor 420 and the light emitting device 440 .

The light emitting device 440 disposed on the planarization layer 435 includes an anode 442 , a light emitting part 444 and a cathode 446 .

An anode 442 may be disposed on the planarization layer 435 . The anode 442 is an electrode serving to supply holes to the light emitting unit 444 and is electrically connected to the thin film transistor 420 .

The anode 442 may be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto.

When the electroluminescent display device 400 is a top emission type that emits light to the top where the cathode 446 is disposed, the emitted light is reflected from the anode 442 and the cathode 446 is more smoothly disposed. A reflective layer may be further included so that the light is emitted in an upward direction.

The anode 442 may have a two-layer structure in which a transparent conductive layer made of a transparent conductive material and a reflective layer are sequentially stacked, or a three-layer structure in which a transparent conductive layer, a reflective layer, and a transparent conductive layer are sequentially stacked, and the reflective layer is silver (Ag) or an alloy containing silver.

The bank 450 disposed on the anode 442 and the planarization layer 435 may define a pixel by partitioning a region that actually emits light. After forming a photoresist on the anode 442, the bank 450 is formed by photolithography. A photoresist refers to a photosensitive resin whose solubility in a developing solution is changed by the action of light, and a specific pattern can be obtained by exposing and developing the photoresist. Photoresists can be classified into positive photoresists and negative photoresists. A positive photoresist refers to a photoresist in which the solubility of an exposed portion in a developing solution is increased by exposure, and a pattern in which the exposed portion is removed is obtained when the positive photoresist is developed. And, the negative photoresist refers to a photoresist in which the solubility of the exposed portion in the developing solution is greatly reduced by exposure, and when the negative photoresist is developed, a pattern in which the unexposed portion is removed is obtained.

In order to form the light emitting part 444 of the light emitting element 440, a fine metal mask (FMM), which is a deposition mask, may be used. And, in order to prevent damage that may occur due to contact with the deposition mask disposed on the bank 450 and to maintain a constant distance between the bank 450 and the deposition mask, a transparent organic material called poly is placed on the top of the bank 450. A spacer 452 composed of one of mead, photoacrylic and benzocyclobutene (BCB) may be disposed.

A light emitting unit 444 is disposed between the anode 442 and the cathode 446 . The light emitting unit 444 serves to emit light, and includes a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer, an electron transport layer (ETL), and an electron injection layer. (Electron Injection Layer; EIL), and some components of the light emitting unit 444 may be omitted depending on the structure or characteristics of the electroluminescent display device 400 . Here, as the light emitting layer, it is also possible to apply an electroluminescent layer and an inorganic light emitting layer.

The hole injection layer is disposed on the anode 442 to facilitate hole injection. The hole injection layer is HAT-CN (dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10.11-hexacarbonitrile), CuPc (phthalocyanine), and NPD (N,N '-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine).

The hole transport layer is disposed on the hole injection layer to smoothly transfer holes to the light emitting layer. The hole transport layer is NPD (N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine), TPD (N,N'-bis-(3-methylphenyl) )-N,N'-bis-(phenyl)-benzidine), s-TAD(2,2',7,7'-tetrakis(N,N-dimethylamino)-9,9-spirofluorene), and MTDATA(4 ,4',4"-Tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine).

The light emitting layer is disposed on the hole transport layer and may emit light of a specific color by including a material capable of emitting light of a specific color. In addition, the light emitting material may be formed using a phosphorescent material or a fluorescent material.

When the emission layer emits red light, the emission peak wavelength may be in the range of 600 nm to 650 nm, and CBP (4,4'-bis (carbazol-9-yl) biphenyl) or mCP (1,3 -bis(carbazol-9-yl)benzene), PIQIr(acac)(bis(1-phenylisoquinoline)(acetylacetonate) iridium), PQIr(acac)(bis(1-phenylquinoline)(acetylacetonate) ) iridium), tris(1-phenylquinoline) iridium (PQIr), and octaethylporphyrin platinum (PtOEP). Alternatively, it may be made of a fluorescent material including PBD:Eu(DBM)3(Phen) or Perylene.

Here, the peak wavelength (λmax) refers to the maximum wavelength of EL (ElectroLuminescence). The wavelength at which the light emitting layers constituting the light emitting unit emits a unique light is called PL (PhotoLuminescence), and the light emitted under the influence of the thickness or optical characteristics of the layers constituting the light emitting layers is called emittance. At this time, EL (ElectroLuminescence) refers to light finally emitted by the electroluminescent display device, and may be expressed as a product of PL (PhotoLuminescence) and emittance.

When the emission layer emits green light, the emission peak wavelength may be in the range of 520 nm to 540 nm, and a host material including CBP or mCP is included, and Ir(ppy) ₃ (tris(2-phenylpyridine)iridium ) may be made of a phosphorescent material including a dopant material such as an Ir complex. In addition, it may be made of a fluorescent material including Alq ₃ (tris(8-hydroxyquinolino)aluminum).

When the light emitting layer emits blue light, the peak wavelength of light emission may be in the range of 440 nm to 480 nm, and a host material including CBP or mCP is included, and FIrPic (bis(3,5-difluoro-2 -(2-pyridyl)phenyl-(2-carboxypyridyl)iridium) and a phosphorescent material including a dopant material. In addition, spiro-DPVBi(4,4'-Bis(2,2-diphenyl-ethen -1-yl)biphenyl), DSA (1-4-di-[4-(N,N-di-phenyl)amino]styryl-benzene), PFO (polyfluorene) polymer, and PPV (polyphenylenevinylene) polymer. It may be made of a fluorescent material including one.

An electron transport layer is disposed on the light emitting layer to facilitate the movement of electrons to the light emitting layer. The electron transport layer is Liq (8-hydroxyquinolinolato-lithium), PBD (2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), TAZ (3-(4-biphenyl) 4-phenyl-5-tert-butylphenyl-1,2,4-triazole), spiro-PBD, BCP (2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline) and BAlq (bis(2- methyl-8-quinolinolate) -4- (phenylphenolato) aluminum).

An electron injection layer may be further disposed on the electron transport layer. The electron injection layer is an organic layer that facilitates electron injection from the cathode 446 and may be omitted depending on the structure and characteristics of the electroluminescent display device 400 . The electron injection layer may be a metal inorganic compound such as BaF 2 , LiF , NaCl, CsF, Li ₂ O and BaO, and HAT-CN (dipyrazino[2,3-f:2',3'-h]quinoxaline-2, 3,6,7,10.11-hexacarbonitrile), CuPc (phthalocyanine), and NPD (N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine) It may be any one or more organic compounds.

By further disposing an electron blocking layer or hole blocking layer to block the flow of holes or electrons adjacent to the light emitting layer, when electrons are injected into the light emitting layer, they move from the light emitting layer and pass through the adjacent hole transport layer. When holes are injected into the light emitting layer, it is possible to improve light emitting efficiency by preventing a phenomenon in which holes move from the light emitting layer and pass through an adjacent electron transport layer.

The cathode 446 is disposed on the light emitting part 444 and serves to supply electrons to the light emitting part 444 . Since the cathode 446 needs to supply electrons, it may be made of a metal material such as magnesium (Mg) or silver-magnesium (Ag:Mg), which is a conductive material having a low work function, but is not limited thereto.

When the electroluminescent display device 400 is a top emission type, the cathode 446 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide ( It may be a transparent conductive oxide based on Zinc Oxide (ZnO) and Tin Oxide (TiO).

On the light emitting element 440, there is a seal to prevent the thin film transistor 420 and the light emitting element 440, which are components of the electroluminescent display device 400, from being oxidized or damaged due to moisture, oxygen, or impurities introduced from the outside. The unit 455 may be disposed, and may be formed by stacking a plurality of encapsulation layers, a foreign material compensation layer, and a plurality of barrier films.

The encapsulation layer is disposed on the entire upper surface of the thin film transistor 420 and the light emitting element 440, and may be made of one of inorganic materials such as silicon nitride (SiNx) or aluminum oxide (AlyOz), but is not limited thereto.

An encapsulation layer may be further disposed on the foreign material compensation layer disposed on the encapsulation layer.

The foreign material compensation layer is disposed on the encapsulation layer, and organic silicon oxycarbon (SiOCz), acrylic, or epoxy-based resin may be used, but is not limited thereto, and may occur during the process. When a defect occurs due to a crack caused by a foreign substance or particle, the foreign matter compensation layer can compensate for the defect by covering the bend and foreign matter.

A touch electrode 470 is disposed on the encapsulation portion 455 . When the touch electrode 470 is directly disposed on the encapsulation 455 instead of a separate touch panel, the process of forming the touch electrode 470 can be simplified compared to the case where a touch panel is separately manufactured and attached. In addition, it is possible to manufacture a light-weight and thin touch-embedded display device. At this time, the touch electrode 470 may be arranged in the form of a plurality of blocks, may be formed of a metal layer with a metal mesh pattern, and may be formed of conductive metals such as copper (Cu), aluminum (Al), and molybdenum (Mo). , chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), etc., but may be composed of a single layer or multiple layers of an alloy thereof, but is not limited thereto.

The touch electrode 470 disposed on the light emitting element 440 may be disposed corresponding to the area where the bank 450 is disposed, thereby minimizing the influence of the touch electrode 470 upon light emission. However, when the touch electrode 470 is disposed closer to the light emitting element 440 due to misalignment while being disposed on the light emitting element 440, the touch electrode 440 composed of a metal layer of a metal mesh pattern A color difference may occur according to the user's viewing angle by affecting an optical path according to the user's viewing angle. If such a color difference occurs according to the viewing angle, it adversely affects the user's readability.

In the touch-embedded electroluminescence display device according to the embodiment of the present specification, the touch electrode 470 of the metal mesh pattern is formed in a tapered shape at the end according to the viewing angle in the area adjacent to the light emitting element 440, and thus the optical path according to the user's viewing angle There is an effect of improving the user's readability by minimizing the influence on the color difference that may occur due to misalignment in arrangement.

As shown in FIG. 4, the taper angle θ of the side of the touch electrode 470 closest to the light emitting element 440 may be 20° to 30°, but is not limited thereto, and the material of the touch electrode 470 and Depending on the manufacturing process, when the taper angle is as large as possible, the color difference is suppressed even at a larger viewing angle, so that the user's readability can be improved.

An adhesive layer 460 and a barrier film 465 are disposed on the touch electrode 470 .

The adhesive layer 460 is disposed between the barrier film 465 and the encapsulation portion 455 to adhere the encapsulation portion 460 and the barrier film 465 . The adhesive layer 460 may be a heat-curable, light-curable, or natural-curable adhesive, and may be made of a material such as barrier pressure sensitive adhesive (B-PSA), but is not limited thereto.

The barrier film 465 seals components disposed below. The barrier film 465 is composed of a light-transmitting and double-sided adhesive film type, and may be composed of any one of olefin-based, acrylic-based, and silicon-based insulating materials, or A barrier film made of any one of COP (Cycloolefin Polymer), COC (Cycloolefin Copolymer) and PC (Polycarbonate) may be further laminated, but is not limited thereto. An organic layer or an inorganic layer may be further positioned above or below the barrier film 465 to prevent penetration of external moisture or oxygen.

A touch-embedded electroluminescent display device according to an embodiment of the present specification includes a substrate including a display area including pixels and a non-display area surrounding the display area, a thin film transistor and a light emitting element disposed on the display area, and a thin film transistor and a light emitting device. It includes an encapsulation part disposed on the element, and a touch electrode disposed on the encapsulation part, the touch electrode is composed of a metal layer having a metal mesh pattern, and an end of the touch electrode adjacent to the light emitting element has a tapered shape.

The taper angle of the touch electrode of the touch-embedded electroluminescent display device according to the embodiment of the present specification is one between 20° and 30°.

A touch electrode of a touch-embedded electroluminescent display device according to an embodiment of the present specification is composed of a plurality of metal layers.

A light emitting element of a touch-embedded electroluminescent display device according to an embodiment of the present specification includes an anode, a light emitting unit, and a cathode.

A light emitting device of a touch-embedded electroluminescent display device according to an embodiment of the present specification emits light of one color among red, green, and blue.

The encapsulation unit of the touch-embedded electroluminescent display device according to the exemplary embodiment of the present specification is composed of a plurality of encapsulation layers and a foreign material compensation layer.

An adhesive layer and a barrier film are disposed on the touch electrodes of the touch-embedded electroluminescent display device according to the exemplary embodiment of the present specification.

A thin film transistor of a touch-embedded electroluminescent display device according to an embodiment of the present specification includes a gate electrode, a semiconductor layer, and source/drain electrodes. The semiconductor layer of the touch-embedded electroluminescent display device according to the exemplary embodiment of the present specification includes a region doped with one of boron (B), aluminum (Al), gallium (Ga), and indium (In) impurities.

A semiconductor layer of a touch-embedded electroluminescent display device according to an embodiment of the present specification includes a region highly doped with one of phosphorus (P), arsenic (As), and antimony (Sb) impurities.

A substrate of the touch-embedded electroluminescent display device according to an embodiment of the present specification is a flexible substrate.

A touch-embedded electroluminescent display device according to an embodiment of the present specification includes a substrate including a display area and a non-display area surrounding the display area, a semiconductor layer disposed on the display area, and including a gate electrode and source/drain electrodes. A thin film transistor, a planarization layer disposed on the thin film transistor, a light emitting element disposed on the planarization layer on the display area and including an anode, a light emitting unit and a cathode, a plurality of encapsulation layers disposed on the light emitting element, and a foreign material compensation layer. It includes an encapsulation portion and a touch electrode disposed on the encapsulation portion, the touch electrode is composed of a metal layer of a metal mesh pattern, and the tip of the touch electrode adjacent to the light emitting element is composed of a tapered shape to improve the viewing angle. Improve the color difference according to

The taper angle of the touch electrode of the touch-embedded electroluminescent display device according to the embodiment of the present specification is one of 20° to 30°.

A touch electrode of a touch-embedded electroluminescent display device according to an embodiment of the present specification is composed of a plurality of metal layers.

An adhesive layer and a barrier film are disposed on the touch electrodes of the touch-embedded electroluminescent display device according to the exemplary embodiment of the present specification.

A thin film transistor of a touch-embedded electroluminescent display device according to an embodiment of the present specification includes a gate electrode, a semiconductor layer, and source/drain electrodes.

The semiconductor layer of the touch-embedded electroluminescent display device according to the exemplary embodiment of the present specification includes a region doped with one of boron (B), aluminum (Al), gallium (Ga), and indium (In) impurities.

A semiconductor layer of a touch-embedded electroluminescence display device according to an embodiment of the present specification includes a region doped with a high concentration of one of phosphorus (P), arsenic (As), and antimony (Sb) impurities.

A substrate of the touch-embedded electroluminescent display device according to an embodiment of the present specification is a flexible substrate.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and may be variously modified and implemented without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed according to the claims, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

100, 200, 300, 400: electroluminescence display
110: image processing unit
120: timing controller
130: data driver
140: gate driver
150: display panel
160: pixels
220: gate line
230: data line
240: switching transistor
250: drive transistor
260: compensation circuit
270, 440: light emitting element
310, 410: substrate
370, 470: touch electrode
372, 472: first touch electrode
374, 474: second touch electrode
376: touch connection electrode
380: touchpad
385: touch wiring
420: thin film transistor
422: gate electrode
424: source electrode
426: drain electrode
428: semiconductor layer
431: first insulating layer
433: second insulating layer
435: planarization layer
442 anode
444: light emitting part
446 cathode
450: bank
455: encapsulation
460: adhesive layer
465: barrier film
A/A: display area
N/A: non-display area

Claims (23)

delete delete delete delete delete delete delete delete delete delete delete a flexible substrate including a display area and a non-display area disposed outside the display area;
a thin film transistor disposed on the display area and including a source electrode, a drain electrode, a semiconductor layer, and a gate electrode;
a planarization layer disposed on the thin film transistor;
an anode disposed on the planarization layer in the display area and connected to at least one of a source electrode and a drain electrode of the thin film transistor;
a bank formed on the anode to partition a light emitting region;
a light emitting layer disposed overlapping at least a portion of the anode;
a cathode disposed on the light emitting layer;
an encapsulation unit disposed on the cathode; and
It is disposed on the encapsulation and includes a plurality of touch electrodes composed of a metal layer of a metal mesh pattern,
The source electrode, the drain electrode, and the plurality of touch electrodes are formed of a triple layer of Ti/Al/Ti,
The plurality of touch electrodes overlap the bank and do not overlap the light emitting layer;
In order to prevent color difference, one end of each of the triple layers adjacent to the light emitting layer of the touch electrode disposed adjacent to the light emitting layer among the plurality of touch electrodes is formed in a tapered shape having an angle of 20 degrees or more and 30 degrees or less,
The encapsulation part is formed on a plurality of encapsulation layers made of inorganic materials and the plurality of encapsulation layers, and includes a foreign material compensation layer made of organic materials,
A semiconductor layer of at least one thin film transistor among the thin film transistors is composed of an oxide semiconductor. delete delete According to claim 12,
An adhesive layer and a barrier film are disposed on the touch electrode disposed closest to the light emitting layer. delete According to claim 12,
The semiconductor layer includes a region doped with one of boron (B), aluminum (Al), gallium (Ga), and indium (In) impurities. According to claim 12,
The semiconductor layer includes a region doped with one of phosphorus (P), arsenic (As), and antimony (Sb) at a high concentration. delete According to claim 12,
A semiconductor layer of at least one thin film transistor among the thin film transistors includes at least one of amorphous silicon, polycrystalline silicon, and oxide. According to claim 12,
First and second insulating layers are disposed on the semiconductor layer,
The first and second insulating layers include at least one of silicon oxide (SiOx) and silicon nitride (SiNx). According to claim 21,
The second insulating layer is disposed between the gate electrode and the source electrode and between the gate electrode and the drain electrode. According to claim 12,
At least a portion of any one touch electrode disposed adjacent to the light emitting layer overlaps with at least one of the cathode and the anode.

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