KR20190079784A - TOUCH-INTEGRATED Electroluminescent DISPLAY DEVICE - Google Patents

Abstract

A touch-integrated electroluminescent display device according to one embodiment of the present specification comprises: a substrate including a display region including pixels and a non-display region surrounding the display region; a thin film transistor and a light emitting element disposed on the display region; an encapsulation part disposed on the thin film transistor and the light emitting element; and a touch electrode disposed on the encapsulation part. The touch electrode is composed of a metal layer of a metal mesh pattern, and the end of the touch electrode adjacent to the light emitting element is tapered. It is possible to minimize color difference.

Description

TOUCH-INTEGRATED ELECTROLUMINUM DISPLAY DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a touch-enabled electroluminescent display device, and more particularly, to a touch-sensitive electroluminescent display device that minimizes a color difference according to a viewing angle.

As the era of information age approaches, there is a rapid development of a display device field for visually displaying electrical information signals. Researches are continuing to develop performance such as thinning, lightening, and low power consumption for various display devices.

Typical display devices include a liquid crystal display device (LCD), a field emission display device (FED), an electro-wetting display device (EWD), and an organic light- Light Emitting Display Device (OLED), and the like.

An electroluminescent display device including an organic light emitting display device is a self light emitting display device, and unlike a liquid crystal display device, a separate light source is not necessary, so that it can be manufactured in a light and thin shape. In addition, the electroluminescent display device is advantageous in terms of power consumption by low-voltage driving, and has excellent color implementation, response speed, viewing angle, and contrast ratio (CR), and is expected to be utilized in various fields.

In the electroluminescence display device, an emissive layer (EML) using an organic material is disposed between two electrodes made of an anode and a cathode. When holes in the anode are injected into the light emitting layer and electrons in the cathode are injected into the light emitting layer, excited electrons and holes are recombined to form excitons in the light emitting layer.

A host material and a dopant material are included in the light emitting layer to cause interaction between the two materials. The host generates excitons from electrons and holes and transfers energy to the dopant. The dopant is a dye organic material to which a small amount of dopant is added, and receives energy from the host and converts the light into light.

An electroluminescent display device including a light emitting layer made of an organic material encapsulates an electroluminescence display device with a glass, a metal, or a film so that moisture or oxygen Thereby preventing oxidation of the light emitting layer and the electrode, and protecting it from mechanical or physical impact externally applied.

A touch screen panel (touch screen panel) is provided which allows a user to input information directly to a screen of a display device by using a finger or a pen in place of an input means such as a mouse or a keyboard which has been conventionally applied as input means of the display device One display device is increasingly used in various fields.

2. Description of the Related Art Generally, a touch screen panel disposed at an upper portion of a display device converts a touch position directly touching a user's hand or an object into an electrical signal, receives an instruction signal selected at a touch position as an input signal, Respectively. However, when the touch screen panel is disposed above the display device, the thickness of the entire display device is increased.

In recent display devices, a structure has been developed in which a touch screen panel is not disposed on an upper portion of a display device, but a touch electrode is disposed on an encapsulating layer of a display device. At this time, the touch electrode on the sealing layer is mostly made of metal. However, the touch electrode disposed adjacent to the light emitting layer has a problem that it affects the light path according to the viewing angle.

The inventors of the present invention have recognized that when a touch-incorporated electroluminescent display device has a viewing angle over a certain range, it is recognized that a touch electrode disposed adjacent to a light emitting layer affects an optical path to generate a chrominance, To thereby improve the readability of a user by minimizing a color difference according to a viewing angle.

The problems of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

A touch-activated electroluminescent display device according to an embodiment of the present invention includes a substrate including a display region including a pixel and a non-display region surrounding the display region, a thin film transistor disposed on the display region, a light emitting device, An encapsulant disposed on the device, and a touch electrode disposed on the encapsulant, wherein the touch electrode is formed of a metal layer of a metal mesh pattern, and an end of the touch electrode adjacent to the light emitting device is tapered.

A touch-sensitive electroluminescent display device according to an embodiment of the present invention includes a substrate including a display region and a non-display region surrounding the display region, a semiconductor layer, a gate electrode, and a source / A planarization layer disposed on the thin film transistor, a light emitting element disposed on the planarization layer on the display region and including an anode, a light emitting portion and a cathode, a plurality of encapsulation layers disposed on the light emitting element, and a foreign material compensation layer And a touch electrode disposed on the encapsulation part, wherein the touch electrode is formed of a metal layer of a metal mesh pattern, and the tip of the touch electrode adjacent to the light emitting element is formed in a tapered shape, Thereby improving the chrominance.

The touch-on type electroluminescence display device according to the embodiment of the present invention improves the touch electrode structure, minimizes the variation of the chrominance according to the viewing angle, and increases the readability of the user

The effects of the flexible electroluminescent display device according to the embodiment of the present invention are not limited by the contents exemplified above, and more various effects are included in the specification.

The scope of the claims is not limited by the matters described in the description of the specification, as the contents of the description in the problems, the solutions to the problems, and the effects described above do not specify the essential features of the claims.

1 is a block diagram of an electroluminescent display device according to an embodiment of the present invention.
2 is a circuit diagram of a pixel included in an electroluminescent display device according to an embodiment of the present invention.
3 is a plan view of a touch-mounted electroluminescent display device according to an embodiment of the present invention.
4 is a cross-sectional view of a touch-mounted electroluminescent display device according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Where the terms "comprises", "having", "done", and the like are used in this specification, other portions may be added unless "only" is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

1 is a block diagram of an electroluminescent display device according to an embodiment of the present invention.

Referring to FIG. 1, an EL display device 100 includes an image processing unit 110, a timing controller 120, a data driver 130, a gate driver 140, and a display panel 150.

The image processing unit 110 outputs a data enable signal DE together with a data signal DATA supplied from the outside. The image processing unit 110 may output at least one of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal in addition to the data enable signal DE.

The timing controller 120 receives a data enable signal DE or a data signal DATA in addition to a drive signal including a vertical synchronization signal, a horizontal synchronization signal, and a clock signal from the image processing unit 110. The timing controller 120 generates a gate timing control signal GDC for controlling the operation timing of the gate driver 140 and a data timing control signal DDC for controlling the operation timing of the data driver 130 based on the drive signal. .

The data driver 130 samples and latches the data signal DATA supplied from the timing controller 120 in response to the data timing control signal DDC supplied from the timing controller 120 and converts the sampled data signal into a gamma reference voltage . The data driver 130 outputs the data signal DATA through the data lines DL1 to DLn.

The gate driver 140 outputs a gate signal while shifting the level of the gate voltage in response to the gate timing control signal GDC supplied from the timing controller 120. The gate driver 140 outputs the gate signal through the gate lines GL1 to GLm.

The display panel 150 displays an image while the pixel 160 emits light corresponding to the data signal DATA and the gate signal supplied from the data driver 130 and the gate driver 140. The detailed structure of the pixel 160 will be described in FIG. 2 and FIG.

2 is a circuit diagram of a pixel included in an electroluminescent display device according to an embodiment of the present invention.

2, a pixel of the EL display device 200 includes a switching transistor 240, a driving transistor 250, a compensation circuit 260, and a light emitting element 270.

The light emitting element 270 operates to emit light in accordance with the driving current generated by the driving transistor 250.

The switching transistor 240 performs a switching operation so that a data signal supplied through the data line 230 corresponding to the gate signal supplied through the gate line 220 is stored in the capacitor as a data voltage.

The driving transistor 250 operates so that a constant driving current flows between the high potential power supply line VDD and the low potential power supply line GND in response to the data voltage stored in the capacitor.

The compensation circuit 260 is a circuit for compensating the threshold voltage and the like of the driving transistor 250, and the compensation circuit 260 includes at least one thin film transistor and a capacitor. The configuration of the compensation circuit may vary widely depending on the compensation method.

The pixel of the electroluminescence display device 200 is composed of a 2T (Transistor) 1C (capacitor) structure including a switching transistor 240, a driving transistor 250, a capacitor and a light emitting element 270, 260 can be additionally formed in the present invention, it can be formed into 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, 7T2C and the like.

3 is a plan view of a touch-mounted electroluminescent display device according to an embodiment of the present invention.

3, the touch-added electroluminescent display 300 includes a thin film transistor on a substrate 310, an active area (A / A) in which pixels for emitting light are arranged through a light emitting element, And a non-active area (N / A) surrounding the periphery of the edge of the area A / A.

On the display area A / A, a pixel for displaying an image with light emitted as described with reference to Figs. 1 and 2 is arranged. On the pixel, a contact position directly touching the user's hand or object is converted into an electrical signal. And a touch electrode 370 for converting the content into an input signal is disposed. At this time, the pixel and the touch electrode 370 can be overlapped with each other.

The detailed sectional structure of the display area A / A will be described in Fig. 4 and Fig. 4B.

A mutual-capacitance type method including the touch electrode 370 configured to cross the first touch electrode 372 and the second touch electrode 374 may be applied, but the present invention is not limited thereto.

The outer shape of the first touch electrode 372 and the second touch electrode 374 may have a plurality of rhombic shapes. The first touch electrode 372 and the second touch electrode 374 may be formed of a metal layer having a metal mesh pattern and may be formed of a conductive metal such as copper (Cu), aluminum (Al), molybdenum (Mo) (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and the like or alloys thereof.

The first touch electrode 372 and the second touch electrode 374 may be disposed on the same layer and the second touch electrode 372 may be disposed in the region where the first touch electrode 372 and the second touch electrode 374 intersect, 374 are separated from each other and the second touch electrodes 374 separated from each other can be connected by the touch connection electrodes 376.

In the non-display area N / A, various wiring including the touch wiring 378 and a pad portion including the touch pad 380 are disposed.

The touch wiring 385 connects the touch electrode 370 and the touch pad 380 disposed in the display area A / A. The touch pad 380 may be connected to an external circuit to receive or transmit the touch signal from the outside.

4 is a cross-sectional view of a touch-mounted electroluminescent display device according to an embodiment of the present invention.

4 is a cross-sectional view of the display area A / A shown in Fig.

Referring to FIG. 4, the substrate 410 supports and protects elements of the EL display device 400 disposed on the upper side, and may be formed of glass or metal. In recent years, the substrate 410 may be a flexible substrate formed of a flexible material having a flexible characteristic.

The flexible substrate may be in the form of a film comprising one of the group consisting of a polyester-based polymer, a silicon-based polymer, an acrylic polymer, a polyolefin-based polymer, and a copolymer thereof.

The substrate 410 may be formed of a material selected from the group consisting of polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polysilane, polysiloxane, polysilazane, polycarbosilane, polyacrylate, polymethacrylate, polymethylacrylate, polymethylmetacrylate, polyethylacrylate, polyethylmetacrylate, cyclic olefin copolymer, (CO), cyclic olefin polymer (COP), polyethylene (PE), polypropylene (PP), polyimide (PI), polymethylmethacrylate (PMMA), polystyrene (PS), polyacetal (PEEK), polyester sulfone (PES), polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polycarbonate (PC), polyvinylidene fluoride (PVDF), a perfluoroalkyl polymer (PFA), styrene acrylonitrile polymer (SAN), and combinations thereof.

A buffer layer may be further disposed on the substrate 410. The buffer layer prevents penetration of moisture or other impurities through the substrate 410 and can flatten the surface of the substrate 410. The buffer layer is not necessarily required, and may be removed depending on the type of the substrate 410 and the type of the thin film transistor 420 disposed on the substrate 410.

The thin film transistor 420 disposed on the substrate 410 includes a gate electrode 422, a source electrode 424, a drain electrode 426, and a semiconductor layer 428.

The semiconductor layer 428 has a higher mobility than amorphous silicon or amorphous silicon and thus has low energy consumption and excellent reliability and can be applied to polycrystalline silicon ), But is not limited thereto.

The semiconductor layer may be formed of an oxide semiconductor. The oxide semiconductor has characteristics of excellent mobility and uniformity. The oxide semiconductors include indium tin gallium zinc oxide (InSnGaZnO) based materials which are quaternary metal oxides, indium gallium zinc oxide (InGaZnO) based materials which are ternary metal oxides, indium tin zinc oxide (InSnZnO) based materials, indium aluminum zinc oxide ) Based material, tin-gallium zinc oxide (SnGaZnO) -based material, aluminum gallium zinc oxide (AlGaZnO) -base material, tin aluminum zinc oxide (SnAlZnO) -based material, bimetallic metal oxide indium zinc oxide (InZnO) An InGaO 3 -based material, an InGaO 3 -based material, an InGaO 3 -based material, an InGaO 3 -based material, an AlGaN-based material, an SnZnO 3 -based material, an AlZnO 3 -based material, a ZnMgO 3 -based tin magnesium oxide material, The semiconductor layer 428 can be constituted by a material, an indium oxide (InO) based material, a tin oxide (SnO) based material, a zinc oxide (ZnO) The composition ratio of each element is not limited.

The semiconductor layer 428 may include a source region including a p-type or an n-type impurity, a drain region, and a channel between the source region and the drain region, And may include a lightly doped region between the adjacent source and drain regions.

The source region and the drain region are regions where the impurity is highly doped, and the source electrode 424 and the drain electrode 426 of the thin film transistor 420 are connected, respectively. The p-type impurity may be one of boron (B), aluminum (Al), gallium (Ga), and indium (In), and the n-type impurity may be phosphorus P), arsenic (As) and antimony (Sb).

The semiconductor layer 428 may be doped with an n-type impurity or a p-type impurity depending on the structure of the NMOS or PMOS thin film transistor, and the thin film transistor included in the electroluminescence display according to an embodiment of the present invention may include an NMOS Or a PMOS thin film transistor is applicable.

The first insulating layer 431 is an insulating layer composed of a single layer of silicon oxide (SiOx) or silicon nitride (SiNx) or a multilayer thereof and a current flowing in the semiconductor layer 428 flows into the gate electrode 422 . The silicon oxide is less ductile than the metal, but is superior in ductility to silicon nitride and can be formed into a single layer or a plurality of layers depending on the characteristics.

The gate electrode 422 serves as a switch for turning on or turning off the thin film transistor 420 based on an electric signal transmitted from the outside through the gate line, (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd) Or multiple layers, but is not limited thereto.

The source electrode 424 and the drain electrode 426 are connected to the data line and electric signals transmitted from the outside are transmitted from the thin film transistor 420 to the light emitting element 440. The source electrode 424 and the drain electrode 426 are formed of a conductive metal such as Cu, Al, Mo, Cr, Au, Ti, Ni, And neodymium (Nd), or an alloy thereof, and may be composed of a single layer or a multilayer, but is not limited thereto.

A second insulating layer 433 composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx) is formed to cover the gate electrode 422, the source electrode 424, and the drain electrode 426, And between the electrode 422 and the source electrode 424 and the drain electrode 426.

A passivation layer composed of an inorganic insulating layer such as silicon oxide (SiOx) or silicon nitride (SiNx) may be further disposed on the thin film transistor 420. [ The passivation layer can prevent unnecessary electrical connection between the passivation layer constituents and prevent contamination or damage from the outside. The passivation layer can be omitted depending on the configuration and characteristics of the thin film transistor 420 and the light emitting element 440 You may.

The thin film transistor 420 may be classified into an inverted staggered structure and a coplanar structure depending on the positions of the constituent elements of the thin film transistor 420. In the thin film transistor of the inverted staggered structure, the gate electrode is located on the opposite side of the source electrode and the drain electrode with respect to the semiconductor layer. 4, the thin film transistor 420 of the coplanar structure has the gate electrode 422 located on the same side of the source electrode 424 and the drain electrode 426 as the semiconductor layer 428 as a reference.

Although the thin film transistor 420 of the coplanar structure is illustrated in FIG. 4, the electroluminescent display 400 may include a thin film transistor of an inverted staggered structure.

For convenience of explanation, only the driving thin film transistor among various thin film transistors included in the electroluminescence display device 400 is shown, and a switching thin film transistor, a capacitor, and the like may be included in the electroluminescence display device 400 as well. When a signal is applied from the gate wiring, the switching thin film transistor transfers a signal from the data wiring to the gate electrode of the driving thin film transistor. The driving thin film transistor transmits a current, which is transmitted through the power supply wiring, to the anode 442 by a signal received from the switching thin film transistor, and controls the light emission by the current transmitted to the anode 442.

The parasitic capacitance generated between the thin film transistor 420 and the gate line and the data line and the light emitting elements 440 is reduced by protecting the thin film transistor 420 and alleviating a step generated by the thin film transistor 420. [ The planarization layer 435 is disposed on the thin film transistor 420 to reduce capacitance.

The planarization layer 435 may be formed of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, But are not limited to, one or more of Unsaturated Polyesters Resin, Polyphenylene Resin, Polyphenylenesulfides Resin, and Benzocyclobutene. A planarizing layer 435 may be used.

A passivation layer composed of an inorganic insulating layer such as silicon oxide (SiOx), silicon nitride (SiNx) may be further disposed on the planarizing layer 435. [ The passivation layer may prevent unnecessary electrical connection between the components and prevent contamination or damage from the outside, and may be omitted depending on the configuration and characteristics of the thin film transistor 420 and the light emitting device 440.

The light emitting device 440 disposed on the planarizing layer 435 includes an anode 442, a light emitting portion 444, and a cathode 446. [

The anode 442 may be disposed on the planarization layer 435. The anode 442 serves to supply holes to the light emitting portion 444 and is electrically connected to the thin film transistor 420.

The anode 442 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO) or the like, which is a transparent conductive material, but is not limited thereto.

When the electroluminescent display device 400 is in the top emission mode in which the cathode 446 is disposed, the emitted light is reflected by the anode 442 so that the cathode 446 is arranged more smoothly So that it can be emitted in the upward direction.

The anode 442 may have a two-layer structure in which a transparent conductive layer composed of a transparent conductive material and a reflective layer are sequentially stacked or a three-layer structure in which a transparent conductive layer, a reflective layer, and a transparent conductive layer are sequentially stacked, Or an alloy including silver.

The bank 450 disposed on the anode 442 and the planarization layer 435 can define a pixel by dividing a region that actually emits light. After the photoresist is formed on the anode 442, the bank 450 is formed by photolithography. A photoresist is a photosensitive resin whose solubility in a developer is changed by the action of light, and a specific pattern can be obtained by exposing and developing the photoresist. The photoresist can be classified into a positive photoresist and a negative photoresist. The positive type photoresist refers to a photoresist whose solubility in a developing solution of the exposed portion is increased by exposure. When the positive type photoresist is developed, a pattern in which the exposed portion is removed is obtained. The negative type photoresist is a photoresist which is greatly reduced in the solubility of the exposed portion in a developing solution upon exposure. When the negative type photoresist is developed, a pattern in which the non-exposed portion is removed is obtained.

A FMM (Fine Metal Mask) which is a deposition mask may be used to form the light emitting portion 444 of the light emitting element 440. In order to prevent damage that may occur in contact with the deposition masks disposed on the banks 450 and to maintain a certain distance between the banks 450 and the deposition masks, (Spacer) 452 made of one of a perovskite-mesoporous, a photoacid, a benzocyclobutene (BCB) may be disposed.

A light emitting portion 444 is disposed between the anode 442 and the cathode 446. The light emitting portion 444 emits light and includes a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer, an electron transport layer (ETL) And an electron injection layer (EIL), and some components of the light emitting portion 444 may be omitted depending on the structure or characteristics of the electroluminescence display device 400. Here, the electroluminescent layer and the inorganic luminescent layer can be applied to the luminescent layer.

The hole injection layer is disposed on the anode 442, and serves to smoothly inject holes. The hole-injecting layer is composed of HAT-CN (dipyrazino [2,3-f: 2 ', 3'-h] quinoxaline-2,3,6,7,10.11-hexacarbonitrile), CuPc (phthalocyanine) '-bis (naphthalene-1-yl) -N, N'-bis (phenyl) -2,2'-dimethylbenzidine.

The hole transport layer is disposed on the hole injection layer and serves to smoothly transfer holes to the light emitting layer. The hole-transporting layer is made of NPD (N, N'-bis (naphthalene-1-yl) -N, N'-bis (phenyl) -2,2'- dimethylbenzidine), TPD (N, N-dimethylamino) -9,9-spirofluorene), and MTDATA (4, 5'- , 4 ', 4 "-Tris (N-3-methylphenyl-N-phenylamino) -triphenylamine.

The light emitting layer is disposed on the hole transporting layer and can emit light of a specific color including a substance capable of emitting light of a specific color. The light emitting material may be formed using a phosphor or a fluorescent material.

When the light emitting layer emits red light, the peak wavelength of emitted light may be in the range of 600 nm to 650 nm, and CBP (4,4'-bis (carbazol-9-yl) biphenyl) or mCP bis (1-phenylisoquinoline) acetylacetonate iridium), PQIr (acac) (bis (1-phenylquinoline) (acetylacetonate) ) iridium, PQIr (tris (1-phenylquinoline) iridium), and PtOEP (octaethylporphyrin platinum). Or a fluorescent material containing PBD: Eu (DBM) 3 (Phen) or Perylene.

Here, the peak wavelength? Max refers to the maximum wavelength of EL (Electroluminescence). The wavelength at which the light emitting layers forming the light emitting portion emit light intrinsically is referred to as PL (Photo Luminescence), and the light that is influenced by the thickness and optical characteristics of the layers constituting the light emitting layers is referred to as emittance. At this time, EL (Electroluminescence) refers to light finally emitted by the electroluminescence display device, and can be expressed by a product of PL (Photo Luminescence) and Emittance.

When the light emitting layer emits green light, the peak emission wavelength may range from 520 nm to 540 nm, including a host material including CBP or mCP, and Ir (ppy) ₃ (tris (2-phenylpyridine) iridium Lt; RTI ID = 0.0 > Ir complex < / RTI > Further, it may be made of a fluorescent material containing Alq ₃ (tris (8-hydroxyquinolino) aluminum).

When the light emitting layer emits blue light, the peak emission wavelength may range from 440 nm to 480 nm, including a host material including CBP or mCP, and FIrPic (bis (3,5-difluoro-2 - (2-pyridyl) phenyl- (2-carboxypyridyl) iridium), and a phosphorescent material containing a dopant material such as spiro-DPVBi (4,4'-Bis -1-yl) biphenyl, DSA (1-4-di- [4- (N, N-di-phenyl) amino] styryl-benzene, PFO, polyphenylenevinylene Or a fluorescent material containing one of them.

An electron transporting layer is disposed on the light emitting layer to smooth the movement of electrons to the light emitting layer. The electron transport layer is composed of Liq (8-hydroxyquinolinolato-lithium), PBD (2- (4-biphenyl) -5- (4- tert- butylphenyl) 4-phenyl-5-tert-butylphenyl-1,2,4-triazole), spiro-PBD, 2,9- methyl-8-quinolinolate) -4- (phenylphenolato) aluminum.

An electron injection layer may further be disposed on the electron transporting layer. The electron injection layer is an organic layer that facilitates the injection of electrons from the cathode 446, and may be omitted depending on the structure and characteristics of the electroluminescence display device 400. The electron injection layer is BaF2, LiF, NaCl, CsF, Li 2 O , and may be a metallic inorganic compound such as BaO, HAT-CN (dipyrazino [ 2,3-f: 2 ', 3'-h] quinoxaline-2, 3,6,7,10.11-hexacarbonitrile), CuPc (phthalocyanine), and NPD (N, N'-bis (naphthalene- , And the like.

An electron blocking layer or a hole blocking layer blocking the flow of holes or electrons is disposed at a position adjacent to the light emitting layer so that when electrons are injected into the light emitting layer, they move from the light emitting layer to pass through the adjacent hole transporting layer It is possible to prevent the phenomenon that the holes migrate from the light emitting layer to the adjacent electron transporting layer when the holes are injected into the light emitting layer, thereby improving the light emitting efficiency.

The cathode 446 is disposed on the light emitting portion 444 and serves to supply electrons to the light emitting portion 444. [ The cathode 446 may be formed of a metal material such as magnesium (Mg), silver-magnesium (Ag: Mg) or the like, which is a conductive material having a low work function, and is not limited thereto.

When the electroluminescent display device 400 is a top-mounted type, the cathode 446 is formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO) Zinc oxide (ZnO), and tin oxide (TiO 2).

The thin film transistor 420 and the light emitting element 440 which are components of the electroluminescence display device 400 are sealed on the light emitting element 440 with a bag for preventing oxidation or damage due to moisture, A plurality of sealing layers, a foreign material compensation layer, and a plurality of barrier films may be stacked.

The sealing layer is disposed on the upper surface of the thin film transistor 420 and the light emitting device 440 and may be composed of one of silicon nitride (SiNx) or aluminum oxide (AlOz), which is an inorganic material.

An encapsulation layer may be further disposed on the foreign material compensation layer disposed on the encapsulation layer.

The foreign material compensation layer is disposed on the sealing layer and may be an organic material such as silicon oxy carbon (SiOCz), acrylic or epoxy resin, but not limited thereto, When a defect occurs due to a foreign substance or a crack generated by a particle, the foreign substance compensating layer can compensate the foreign substance by covering the foreign object.

A touch electrode 470 is disposed on the sealing portion 455. When the touch electrode 470 is disposed directly on the sealing portion 455 instead of disposing a separate touch panel, the process of forming the touch electrode 470 can be simplified compared to the case of separately manufacturing and attaching the touch panel And it is possible to manufacture a lightweight, thin touch-mounted display device. At this time, the touch electrode 470 may be arranged in a plurality of blocks, or may be formed of a metal layer of a metal mesh pattern, and may be formed of copper (Cu), aluminum (Al), molybdenum (Mo) (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and the like or alloys thereof.

The touch electrode 470 disposed on the light emitting device 440 may be disposed on the region where the banks 450 are disposed to minimize the influence of the touch electrode 470 during light emission. However, when the touch electrode 470 is arranged on the light emitting device 440 and is disposed adjacent to the light emitting device 440 due to the occurrence of a miss-alignment, the touch electrode 440, which is a metal layer of a metal mesh pattern, The color difference depending on the viewing angle can be generated by affecting the light path according to the viewing angle of the user. When such a color difference according to the viewing angle is generated, it adversely affects the readability of the user.

In the touch-added electroluminescent display device according to the present embodiment, the touch electrode 470 of the metal mesh pattern is tapered at the end in a region adjacent to the light emitting device 440 according to the viewing angle, Thereby minimizing the chrominance that may be caused by the misalignment of the layout, thereby improving the readability of the user.

The taper angle θ of the side surface of the touch electrode 470 closest to the light emitting device 440 may be set to 30 ° from 20 ° as shown in FIG. If the taper angle is maximized according to the manufacturing process, the color difference is suppressed even at a larger viewing angle, so that the readability of the user can be improved.

An adhesive layer 460 and a barrier film 465 are disposed on the touch electrode 470.

The adhesive layer 460 is disposed between the barrier film 465 and the sealing portion 455 to bond the sealing portion 460 and the barrier film 465. The adhesive layer 460 may be a thermosetting, light-curing or natural-curing adhesive, and may be made of a material such as B-PSA (Barrier Pressure Sensitive Adhesive), but is not limited thereto.

The barrier film 465 encapsulates the components disposed underneath. The barrier film 465 may be formed of an insulating material selected from the group consisting of an olefin series, an acrylic series, and a silicon series, A barrier film composed of any one of COP (Cyclolefin Polymer), COC (Cycloolefin Copolymer) and PC (Polycarbonate) may be further laminated, but not limited thereto. An organic film or an inorganic film may be further disposed on the upper or lower part of the barrier film 465 to prevent penetration of moisture or oxygen from the outside.

A touch-activated electroluminescent display device according to an embodiment of the present invention includes a substrate including a display region including a pixel and a non-display region surrounding the display region, a thin film transistor disposed on the display region, a light emitting device, An encapsulant disposed on the device, and a touch electrode disposed on the encapsulant, wherein the touch electrode is formed of a metal layer of a metal mesh pattern, and an end of the touch electrode adjacent to the light emitting device is tapered.

The taper angle of the touch electrode of the touch-based electroluminescent display device according to the embodiment of the present invention is one at 20 ° to 30 °.

The touch electrode of the touch-based electroluminescent display device according to the embodiment of the present invention is formed of a plurality of metal layers.

The light emitting device of the touch-incorporated FED according to the embodiment of the present invention includes an anode, a light emitting portion, and a cathode.

The light emitting device of the touch-incorporated FED according to the embodiment of the present invention emits one of red, green, and blue colors.

The encapsulant of the touch-activated electroluminescent display device according to the embodiment of the present invention is composed of a plurality of sealing layers and a foreign material compensating layer.

An adhesive layer and a barrier film are disposed on a touch electrode of a touch-incorporated electroluminescent display device according to an embodiment of the present invention.

The thin film transistor of the touch-incorporated FED according to the embodiment of the present invention includes a gate electrode, a semiconductor layer, and a source / drain electrode. The semiconductor layer of the touch-activated electroluminescent display device according to the embodiment of the present invention includes a doped region of one of boron (B), aluminum (Al), gallium (Ga), and indium (In).

The semiconductor layer of the touch-activated electroluminescent display device according to the embodiment of the present invention includes a region doped with a high concentration of one of phosphorous (P), arsenic (As), and antimony (Sb).

The substrate of the touch-incorporated electroluminescent display device according to the embodiment of the present invention is a flexible substrate.

A touch-sensitive electroluminescent display device according to an embodiment of the present invention includes a substrate including a display region and a non-display region surrounding the display region, a semiconductor layer, a gate electrode, and a source / A planarization layer disposed on the thin film transistor, a light emitting element disposed on the planarization layer on the display region and including an anode, a light emitting portion and a cathode, a plurality of encapsulation layers disposed on the light emitting element, and a foreign material compensation layer And a touch electrode disposed on the encapsulation part, wherein the touch electrode is formed of a metal layer of a metal mesh pattern, and the tip of the touch electrode adjacent to the light emitting element is formed in a tapered shape, Thereby improving the chrominance.

The taper angle of the touch electrode of the touch-incorporated FED according to the embodiment of the present invention is one of 20 ° to 30 °.

The touch electrode of the touch-based electroluminescent display device according to the embodiment of the present invention is formed of a plurality of metal layers.

An adhesive layer and a barrier film are disposed on a touch electrode of a touch-incorporated electroluminescent display device according to an embodiment of the present invention.

The thin film transistor of the touch-incorporated FED according to the embodiment of the present invention includes a gate electrode, a semiconductor layer, and a source / drain electrode.

The semiconductor layer of the touch-activated electroluminescent display device according to the embodiment of the present invention includes a doped region of one of boron (B), aluminum (Al), gallium (Ga), and indium (In).

The touch-sensitive electroluminescent display device semiconductor layer according to the embodiment of the present invention includes a region doped with one of impurities such as phosphorus (P), arsenic (As), and antimony (Sb) at a high concentration.

The substrate of the touch-incorporated electroluminescent display device according to the embodiment of the present invention is a flexible substrate.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

100, 200, 300, 400: electroluminescent display device
110:
120: Timing controller
130: Data driver
140: gate driver
150: Display panel
160: pixel
220: gate line
230: Data line
240: switching transistor
250: driving transistor
260: Compensation circuit
270, 440: Light emitting element
310, 410: substrate
370, 470: a touch electrode
372, 472: first touch electrode
374, 474: a second touch electrode
376: Touch connecting electrode
380: Touchpad
385: Touch wiring
420: thin film transistor
422: gate electrode
424: source electrode
426: drain electrode
428: Semiconductor layer
431: first insulating layer
433: second insulating layer
435: planarization layer
442: anode
444:
446: Cathode
450: Bank
455:
460: adhesive layer
465: Barrier film
A / A: display area
N / A: Non-display area

Claims (19)

A substrate including a display region including pixels and a non-display region surrounding the display region;
A thin film transistor and a light emitting element arranged on the display region;
An encapsulating portion disposed on the thin film transistor and the light emitting element; And
And a touch electrode disposed on the sealing portion,
Wherein the touch electrode is formed of a metal layer of a metal mesh pattern and the end of the touch electrode adjacent to the light emitting device is tapered. The method according to claim 1,
Wherein the taper angle of the touch electrode is one at 20 ° to 30 °. The method according to claim 1,
Wherein the touch electrode is composed of a plurality of metal layers. The method according to claim 1,
Wherein the light emitting element includes an anode, a light emitting portion, and a cathode. The method according to claim 1,
Wherein the light emitting element emits light of one of red, green, and blue colors. The method according to claim 1,
Wherein the sealing portion is composed of a plurality of sealing layers and a foreign material compensation layer. The method according to claim 1,
And an adhesive layer and a barrier film are disposed on the touch electrode. The method according to claim 1,
Wherein the thin film transistor includes a gate electrode, a semiconductor layer, and a source / drain electrode. 9. The method of claim 8,
Wherein the semiconductor layer includes a doped region of one of boron (B), aluminum (Al), gallium (Ga), and indium (In). 9. The method of claim 8,
Wherein the semiconductor layer includes a region in which impurities of one of phosphorus (P), arsenic (As), and antimony (Sb) are heavily doped. The method according to claim 1,
Wherein the substrate is a flexible substrate. A substrate including a display region and a non-display region surrounding the display region;
A thin film transistor disposed on the display region and including a semiconductor layer, a gate electrode, and a source / drain electrode;
A planarization layer disposed on the thin film transistor;
A light emitting element disposed on the planarization layer on the display region and including an anode, a light emitting portion, and a cathode;
An encapsulating portion including a plurality of encapsulating layers disposed on the light emitting element and a foreign material compensation layer; And
And a touch electrode disposed on the sealing portion,
Wherein the touch electrode is composed of a metal layer of a metal mesh pattern and the end of the touch electrode adjacent to the light emitting element is formed in a tapered shape to improve a color difference according to a viewing angle. 13. The method of claim 12,
Wherein the taper angle of the touch electrode is one of 20 ° to 30 °. 13. The method of claim 12,
Wherein the touch electrode is composed of a plurality of metal layers. 13. The method of claim 12,
And an adhesive layer and a barrier film are disposed on the touch electrode. 13. The method of claim 12,
Wherein the thin film transistor includes a gate electrode, a semiconductor layer, and a source / drain electrode. 17. The method of claim 16,
Wherein the semiconductor layer includes a doped region of one of boron (B), aluminum (Al), gallium (Ga), and indium (In). 17. The method of claim 16,
Wherein the semiconductor layer includes a region in which impurities of one of phosphorus (P), arsenic (As), and antimony (Sb) are heavily doped. 13. The method of claim 12,
Wherein the substrate is a flexible substrate.

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