KR20220054280A - 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법 - Google Patents

다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법 Download PDF

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Publication number
KR20220054280A
KR20220054280A KR1020227000193A KR20227000193A KR20220054280A KR 20220054280 A KR20220054280 A KR 20220054280A KR 1020227000193 A KR1020227000193 A KR 1020227000193A KR 20227000193 A KR20227000193 A KR 20227000193A KR 20220054280 A KR20220054280 A KR 20220054280A
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South Korea
Prior art keywords
film
substrate
thin film
multilayer reflective
absorber
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Pending
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KR1020227000193A
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English (en)
Korean (ko)
Inventor
코타 스즈키
카요 차엔
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호야 가부시키가이샤
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Publication of KR20220054280A publication Critical patent/KR20220054280A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
    • H01J49/142—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H01J49/34—Dynamic spectrometers
    • H01J49/40—Time-of-flight spectrometers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Analytical Chemistry (AREA)
KR1020227000193A 2019-09-04 2020-08-24 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법 Pending KR20220054280A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-161217 2019-09-04
JP2019161217A JP7379027B2 (ja) 2019-09-04 2019-09-04 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
PCT/JP2020/031888 WO2021044890A1 (ja) 2019-09-04 2020-08-24 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20220054280A true KR20220054280A (ko) 2022-05-02

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Family Applications (1)

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KR1020227000193A Pending KR20220054280A (ko) 2019-09-04 2020-08-24 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US12105411B2 (enExample)
JP (2) JP7379027B2 (enExample)
KR (1) KR20220054280A (enExample)
TW (2) TW202527069A (enExample)
WO (1) WO2021044890A1 (enExample)

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* Cited by examiner, † Cited by third party
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KR20240007154A (ko) * 2021-05-14 2024-01-16 에이지씨 가부시키가이샤 반사형 마스크 블랭크 및 그 제조 방법, 그리고 해당 마스크 블랭크용의 반사층을 구비한 기판
US12353120B2 (en) * 2021-07-30 2025-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. EUV photo masks and manufacturing method thereof
WO2023037980A1 (ja) * 2021-09-07 2023-03-16 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP7567742B2 (ja) 2021-10-01 2024-10-16 信越化学工業株式会社 反射型マスクブランク用膜付き基板、反射型マスクブランク、及び反射型マスクの製造方法
JP7669321B2 (ja) * 2022-09-01 2025-04-28 信越化学工業株式会社 反射型マスクブランクおよび反射型マスクの製造方法
JP7681153B1 (ja) * 2024-04-11 2025-05-21 テクセンドフォトマスク株式会社 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法

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JP2012129520A (ja) 2010-12-14 2012-07-05 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法、および該マスクブランクス用の機能膜付基板の製造方法
JP2013174012A (ja) 2012-02-02 2013-09-05 Sematech Inc 堆積システムのシールド表面のコーティング

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JP2006176819A (ja) * 2004-12-22 2006-07-06 Nikon Corp 成膜装置、成膜方法、多層膜反射鏡及びｅｕｖ露光装置
KR100699858B1 (ko) 2005-08-03 2007-03-27 삼성전자주식회사 극자외선 리소그래피용 반사 디바이스 및 그 제조 방법 및이를 적용한 극자외선 리소그래피용 마스크, 프로젝션광학계 및 리소그래피 장치
TWI394294B (zh) 2007-01-26 2013-04-21 Shinetsu Handotai Kk Light emitting element and manufacturing method thereof
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KR101857844B1 (ko) 2011-02-04 2018-05-14 아사히 가라스 가부시키가이샤 도전막이 형성된 기판, 다층 반사막이 형성된 기판, 및 ｅｕｖ 리소그래피용 반사형 마스크 블랭크
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JP2009510711A (ja) 2005-10-03 2009-03-12 旭硝子株式会社 Ｅｕｖリソグラフィ用マスクブランクの多層膜の成膜方法、およびｅｕｖリソグラフィ用マスクブランクの製造方法
JP2012129520A (ja) 2010-12-14 2012-07-05 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法、および該マスクブランクス用の機能膜付基板の製造方法
JP2013174012A (ja) 2012-02-02 2013-09-05 Sematech Inc 堆積システムのシールド表面のコーティング

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US20220269161A1 (en) 2022-08-25
TW202527069A (zh) 2025-07-01
JP7612809B2 (ja) 2025-01-14
JP2021039271A (ja) 2021-03-11
TW202121502A (zh) 2021-06-01
TWI879795B (zh) 2025-04-11
JP2024003070A (ja) 2024-01-11
US12105411B2 (en) 2024-10-01
JP7379027B2 (ja) 2023-11-14
WO2021044890A1 (ja) 2021-03-11

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