KR20210127876A - 복합 실리카 입자를 함유하는 화학적 기계적 폴리싱 조성물, 복합 실리카 입자를 제조하는 방법 및 기판을 폴리싱하는 방법 - Google Patents

복합 실리카 입자를 함유하는 화학적 기계적 폴리싱 조성물, 복합 실리카 입자를 제조하는 방법 및 기판을 폴리싱하는 방법 Download PDF

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Publication number
KR20210127876A
KR20210127876A KR1020210045203A KR20210045203A KR20210127876A KR 20210127876 A KR20210127876 A KR 20210127876A KR 1020210045203 A KR1020210045203 A KR 1020210045203A KR 20210045203 A KR20210045203 A KR 20210045203A KR 20210127876 A KR20210127876 A KR 20210127876A
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KR
South Korea
Prior art keywords
mechanical polishing
chemical mechanical
cerium
polishing composition
optionally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020210045203A
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English (en)
Korean (ko)
Inventor
구오 위
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
Publication of KR20210127876A publication Critical patent/KR20210127876A/ko
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H01L21/3212—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
KR1020210045203A 2020-04-15 2021-04-07 복합 실리카 입자를 함유하는 화학적 기계적 폴리싱 조성물, 복합 실리카 입자를 제조하는 방법 및 기판을 폴리싱하는 방법 Withdrawn KR20210127876A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/849,135 US11384254B2 (en) 2020-04-15 2020-04-15 Chemical mechanical polishing composition containing composite silica particles, method of making the silica composite particles and method of polishing a substrate
US16/849,135 2020-04-15

Publications (1)

Publication Number Publication Date
KR20210127876A true KR20210127876A (ko) 2021-10-25

Family

ID=78081571

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210045203A Withdrawn KR20210127876A (ko) 2020-04-15 2021-04-07 복합 실리카 입자를 함유하는 화학적 기계적 폴리싱 조성물, 복합 실리카 입자를 제조하는 방법 및 기판을 폴리싱하는 방법

Country Status (5)

Country Link
US (2) US11384254B2 (https=)
JP (1) JP2021169604A (https=)
KR (1) KR20210127876A (https=)
CN (1) CN113528026B (https=)
TW (1) TW202140741A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102763798B1 (ko) * 2021-01-06 2025-02-05 가부시끼가이샤 레조낙 연마액, 연마액 세트 및 연마 방법
CN115197645B (zh) * 2021-04-02 2024-02-20 Sk恩普士有限公司 半导体工艺用抛光组合物以及半导体器件的制造方法
KR102728251B1 (ko) * 2021-12-31 2024-11-11 주식회사 케이씨텍 컨택 공정용 금속막 슬러리 조성물
CN116063930A (zh) * 2023-03-29 2023-05-05 国科大杭州高等研究院 一种半导体硅片抛光用的纳米硅铈复合抛光液的制备方法
WO2025108860A1 (en) * 2023-11-20 2025-05-30 Merck Patent Gmbh Silica particles, compositions comprising such particles, and uses of such particles and compositions
WO2026078797A1 (ja) * 2024-10-08 2026-04-16 株式会社レゾナック 砥粒、スラリ、研磨方法、及び、部品の製造方法

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US20030118824A1 (en) * 2001-12-20 2003-06-26 Tokarz Bozena Stanislawa Coated silica particles and method for production thereof
JP4294710B2 (ja) * 2007-09-13 2009-07-15 三井金属鉱業株式会社 酸化セリウム及びその製造方法
SG191877A1 (en) * 2011-01-25 2013-08-30 Hitachi Chemical Co Ltd Cmp polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material
SG11201610332PA (en) * 2014-06-25 2017-02-27 Cabot Microelectronics Corp Copper barrier chemical-mechanical polishing composition
US10032644B2 (en) * 2015-06-05 2018-07-24 Versum Materials Us, Llc Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
JP6721704B2 (ja) * 2016-03-04 2020-07-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 半導体基材をケミカルメカニカル研磨する方法
JP6797665B2 (ja) * 2016-12-20 2020-12-09 花王株式会社 研磨液組成物
JP7062360B2 (ja) * 2016-12-28 2022-05-06 キヤノン株式会社 情報処理装置、情報処理装置の作動方法およびプログラム
US10037889B1 (en) * 2017-03-29 2018-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films
US10428241B2 (en) * 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
JP7020865B2 (ja) * 2017-10-30 2022-02-16 日揮触媒化成株式会社 セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液
JPWO2019181487A1 (ja) * 2018-03-23 2021-03-11 富士フイルム株式会社 研磨液および化学的機械的研磨方法
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten

Also Published As

Publication number Publication date
CN113528026A (zh) 2021-10-22
TW202140741A (zh) 2021-11-01
CN113528026B (zh) 2022-11-15
US20220177729A1 (en) 2022-06-09
US20210324236A1 (en) 2021-10-21
US11384254B2 (en) 2022-07-12
JP2021169604A (ja) 2021-10-28
US11718769B2 (en) 2023-08-08

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