CN113528026B - 包含复合二氧化硅颗粒的化学机械抛光组合物、制造所述颗粒的方法以及抛光衬底的方法 - Google Patents

包含复合二氧化硅颗粒的化学机械抛光组合物、制造所述颗粒的方法以及抛光衬底的方法 Download PDF

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Publication number
CN113528026B
CN113528026B CN202110398366.9A CN202110398366A CN113528026B CN 113528026 B CN113528026 B CN 113528026B CN 202110398366 A CN202110398366 A CN 202110398366A CN 113528026 B CN113528026 B CN 113528026B
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China
Prior art keywords
cerium
chemical mechanical
mechanical polishing
substrate
particles
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Expired - Fee Related
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CN202110398366.9A
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English (en)
Chinese (zh)
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CN113528026A (zh
Inventor
郭毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
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Rohm and Haas Electronic Materials CMP Holdings Inc
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Publication of CN113528026A publication Critical patent/CN113528026A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
CN202110398366.9A 2020-04-15 2021-04-06 包含复合二氧化硅颗粒的化学机械抛光组合物、制造所述颗粒的方法以及抛光衬底的方法 Expired - Fee Related CN113528026B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/849,135 US11384254B2 (en) 2020-04-15 2020-04-15 Chemical mechanical polishing composition containing composite silica particles, method of making the silica composite particles and method of polishing a substrate
US16/849135 2020-04-15

Publications (2)

Publication Number Publication Date
CN113528026A CN113528026A (zh) 2021-10-22
CN113528026B true CN113528026B (zh) 2022-11-15

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CN202110398366.9A Expired - Fee Related CN113528026B (zh) 2020-04-15 2021-04-06 包含复合二氧化硅颗粒的化学机械抛光组合物、制造所述颗粒的方法以及抛光衬底的方法

Country Status (5)

Country Link
US (2) US11384254B2 (https=)
JP (1) JP2021169604A (https=)
KR (1) KR20210127876A (https=)
CN (1) CN113528026B (https=)
TW (1) TW202140741A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102763798B1 (ko) * 2021-01-06 2025-02-05 가부시끼가이샤 레조낙 연마액, 연마액 세트 및 연마 방법
CN115197645B (zh) * 2021-04-02 2024-02-20 Sk恩普士有限公司 半导体工艺用抛光组合物以及半导体器件的制造方法
KR102728251B1 (ko) * 2021-12-31 2024-11-11 주식회사 케이씨텍 컨택 공정용 금속막 슬러리 조성물
CN116063930A (zh) * 2023-03-29 2023-05-05 国科大杭州高等研究院 一种半导体硅片抛光用的纳米硅铈复合抛光液的制备方法
WO2025108860A1 (en) * 2023-11-20 2025-05-30 Merck Patent Gmbh Silica particles, compositions comprising such particles, and uses of such particles and compositions
WO2026078797A1 (ja) * 2024-10-08 2026-04-16 株式会社レゾナック 砥粒、スラリ、研磨方法、及び、部品の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030118824A1 (en) * 2001-12-20 2003-06-26 Tokarz Bozena Stanislawa Coated silica particles and method for production thereof
JP4294710B2 (ja) * 2007-09-13 2009-07-15 三井金属鉱業株式会社 酸化セリウム及びその製造方法
SG191877A1 (en) * 2011-01-25 2013-08-30 Hitachi Chemical Co Ltd Cmp polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material
SG11201610332PA (en) * 2014-06-25 2017-02-27 Cabot Microelectronics Corp Copper barrier chemical-mechanical polishing composition
US10032644B2 (en) * 2015-06-05 2018-07-24 Versum Materials Us, Llc Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
JP6721704B2 (ja) * 2016-03-04 2020-07-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 半導体基材をケミカルメカニカル研磨する方法
JP6797665B2 (ja) * 2016-12-20 2020-12-09 花王株式会社 研磨液組成物
JP7062360B2 (ja) * 2016-12-28 2022-05-06 キヤノン株式会社 情報処理装置、情報処理装置の作動方法およびプログラム
US10037889B1 (en) * 2017-03-29 2018-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films
US10428241B2 (en) * 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
JP7020865B2 (ja) * 2017-10-30 2022-02-16 日揮触媒化成株式会社 セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液
JPWO2019181487A1 (ja) * 2018-03-23 2021-03-11 富士フイルム株式会社 研磨液および化学的機械的研磨方法
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten

Also Published As

Publication number Publication date
CN113528026A (zh) 2021-10-22
KR20210127876A (ko) 2021-10-25
TW202140741A (zh) 2021-11-01
US20220177729A1 (en) 2022-06-09
US20210324236A1 (en) 2021-10-21
US11384254B2 (en) 2022-07-12
JP2021169604A (ja) 2021-10-28
US11718769B2 (en) 2023-08-08

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