JP2021169604A - 複合シリカ粒子を含有するケミカルメカニカルポリッシング組成物、シリカ複合粒子を製造する方法、及び基板を研磨する方法 - Google Patents

複合シリカ粒子を含有するケミカルメカニカルポリッシング組成物、シリカ複合粒子を製造する方法、及び基板を研磨する方法 Download PDF

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Publication number
JP2021169604A
JP2021169604A JP2021062836A JP2021062836A JP2021169604A JP 2021169604 A JP2021169604 A JP 2021169604A JP 2021062836 A JP2021062836 A JP 2021062836A JP 2021062836 A JP2021062836 A JP 2021062836A JP 2021169604 A JP2021169604 A JP 2021169604A
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JP
Japan
Prior art keywords
chemical mechanical
mechanical polishing
cerium
polishing composition
silica
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021062836A
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English (en)
Japanese (ja)
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JP2021169604A5 (https=
Inventor
イ・グオ
Yi Guo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2021169604A publication Critical patent/JP2021169604A/ja
Publication of JP2021169604A5 publication Critical patent/JP2021169604A5/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
JP2021062836A 2020-04-15 2021-04-01 複合シリカ粒子を含有するケミカルメカニカルポリッシング組成物、シリカ複合粒子を製造する方法、及び基板を研磨する方法 Pending JP2021169604A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/849,135 US11384254B2 (en) 2020-04-15 2020-04-15 Chemical mechanical polishing composition containing composite silica particles, method of making the silica composite particles and method of polishing a substrate
US16/849,135 2020-04-15

Publications (2)

Publication Number Publication Date
JP2021169604A true JP2021169604A (ja) 2021-10-28
JP2021169604A5 JP2021169604A5 (https=) 2024-03-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021062836A Pending JP2021169604A (ja) 2020-04-15 2021-04-01 複合シリカ粒子を含有するケミカルメカニカルポリッシング組成物、シリカ複合粒子を製造する方法、及び基板を研磨する方法

Country Status (5)

Country Link
US (2) US11384254B2 (https=)
JP (1) JP2021169604A (https=)
KR (1) KR20210127876A (https=)
CN (1) CN113528026B (https=)
TW (1) TW202140741A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026079355A1 (ja) * 2024-10-08 2026-04-16 株式会社レゾナック 砥粒、スラリ、研磨方法、部品の製造方法、及び、半導体部品の製造方法

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KR102763798B1 (ko) * 2021-01-06 2025-02-05 가부시끼가이샤 레조낙 연마액, 연마액 세트 및 연마 방법
CN115197645B (zh) * 2021-04-02 2024-02-20 Sk恩普士有限公司 半导体工艺用抛光组合物以及半导体器件的制造方法
KR102728251B1 (ko) * 2021-12-31 2024-11-11 주식회사 케이씨텍 컨택 공정용 금속막 슬러리 조성물
CN116063930A (zh) * 2023-03-29 2023-05-05 国科大杭州高等研究院 一种半导体硅片抛光用的纳米硅铈复合抛光液的制备方法
WO2025108860A1 (en) * 2023-11-20 2025-05-30 Merck Patent Gmbh Silica particles, compositions comprising such particles, and uses of such particles and compositions

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US20030118824A1 (en) * 2001-12-20 2003-06-26 Tokarz Bozena Stanislawa Coated silica particles and method for production thereof
JP2009067627A (ja) * 2007-09-13 2009-04-02 Mitsui Mining & Smelting Co Ltd 酸化セリウム及びその製造方法
JP2017071753A (ja) * 2015-06-05 2017-04-13 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ セリア被覆シリカ研磨剤を使用したバリア化学機械平坦化スラリー
JP2018101693A (ja) * 2016-12-20 2018-06-28 花王株式会社 研磨液組成物
JP2018170505A (ja) * 2017-03-29 2018-11-01 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド カチオン性粒子含有スラリー及びスピンオン炭素膜のｃｍｐのためのその使用方法
JP2019071413A (ja) * 2017-10-05 2019-05-09 フジフィルム プラナー ソリューションズ、 エルエルシー 帯電した研磨剤を含有する研磨組成物
JP2019512876A (ja) * 2016-03-04 2019-05-16 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 半導体基材をケミカルメカニカル研磨する方法
JP2019081672A (ja) * 2017-10-30 2019-05-30 日揮触媒化成株式会社 セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液
WO2019181487A1 (ja) * 2018-03-23 2019-09-26 富士フイルム株式会社 研磨液および化学的機械的研磨方法

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SG191877A1 (en) * 2011-01-25 2013-08-30 Hitachi Chemical Co Ltd Cmp polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material
SG11201610332PA (en) * 2014-06-25 2017-02-27 Cabot Microelectronics Corp Copper barrier chemical-mechanical polishing composition
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
JP7062360B2 (ja) * 2016-12-28 2022-05-06 キヤノン株式会社 情報処理装置、情報処理装置の作動方法およびプログラム
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten

Patent Citations (9)

* Cited by examiner, † Cited by third party
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US20030118824A1 (en) * 2001-12-20 2003-06-26 Tokarz Bozena Stanislawa Coated silica particles and method for production thereof
JP2009067627A (ja) * 2007-09-13 2009-04-02 Mitsui Mining & Smelting Co Ltd 酸化セリウム及びその製造方法
JP2017071753A (ja) * 2015-06-05 2017-04-13 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ セリア被覆シリカ研磨剤を使用したバリア化学機械平坦化スラリー
JP2019512876A (ja) * 2016-03-04 2019-05-16 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 半導体基材をケミカルメカニカル研磨する方法
JP2018101693A (ja) * 2016-12-20 2018-06-28 花王株式会社 研磨液組成物
JP2018170505A (ja) * 2017-03-29 2018-11-01 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド カチオン性粒子含有スラリー及びスピンオン炭素膜のｃｍｐのためのその使用方法
JP2019071413A (ja) * 2017-10-05 2019-05-09 フジフィルム プラナー ソリューションズ、 エルエルシー 帯電した研磨剤を含有する研磨組成物
JP2019081672A (ja) * 2017-10-30 2019-05-30 日揮触媒化成株式会社 セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液
WO2019181487A1 (ja) * 2018-03-23 2019-09-26 富士フイルム株式会社 研磨液および化学的機械的研磨方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026079355A1 (ja) * 2024-10-08 2026-04-16 株式会社レゾナック 砥粒、スラリ、研磨方法、部品の製造方法、及び、半導体部品の製造方法
WO2026079357A1 (ja) * 2024-10-08 2026-04-16 株式会社レゾナック 砥粒、スラリ、研磨方法、部品の製造方法、及び、半導体部品の製造方法

Also Published As

Publication number Publication date
CN113528026A (zh) 2021-10-22
KR20210127876A (ko) 2021-10-25
TW202140741A (zh) 2021-11-01
CN113528026B (zh) 2022-11-15
US20220177729A1 (en) 2022-06-09
US20210324236A1 (en) 2021-10-21
US11384254B2 (en) 2022-07-12
US11718769B2 (en) 2023-08-08

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