KR20210087057A - Evaporation source and vacuum processing equipment - Google Patents

Abstract

[Problem] The blockage of the jet nozzle by the vapor deposition material is suppressed.
[Solution] An evaporation source, wherein the evaporation container has a container body including a bottom portion and a side wall portion extending to the bottom portion, and a top plate facing the bottom portion and provided with a jet nozzle, and is formed by the container body and the top plate A vapor deposition material is accommodated in the enclosed space. A 1st heating mechanism opposes the said side wall part. A 2nd heating mechanism is opposed to each side part of the said top plate and the said jet nozzle, and is provided spaced apart from the said 1st heating mechanism in the direction which goes to the said top plate from the said bottom part. A 1st reflector faces the said 1st heating mechanism, and is provided in the opposite side of the said side wall part. A 2nd reflector opposes a said 2nd heating mechanism, is provided on the opposite side of the said side part, and is provided spaced apart from the said 1st reflector in the said direction.

Description

Evaporation source and vacuum processing equipment

The present invention relates to an evaporation source and a vacuum processing apparatus.

Among the vacuum processing apparatuses, there is, for example, an apparatus for depositing organic materials on large substrates for displays. In such an apparatus, a vapor deposition material is vapor-deposited on a board|substrate by making a board|substrate and an evaporation source face, and ejecting a vapor deposition material toward a board|substrate from an evaporation source.

The vapor deposition source includes a vapor deposition vessel (crucible) for accommodating the vapor deposition material, a top plate for blocking the vapor deposition vessel, a jet nozzle provided on the top plate, and a heating mechanism for heating the deposition vessel, the top plate, and the jet nozzle ( For example, refer to patent document 1). When the vapor deposition material is heated by the heating mechanism, the vapor deposition material is ejected from the jet nozzle toward the substrate.

[Patent Document 1] Japanese Patent Laid-Open No. 2012-214835

As one of the measures to increase the production amount using the vacuum processing apparatus as described above, there is a method of extending the continuous operation time. However, vapor deposition material will adhere not only to a board|substrate, but also to the site|part around a jet nozzle. For this reason, when continuous operation time becomes long, the jet nozzle may be covered with the vapor deposition material deposited on the peripheral part, and the ejection nozzle may be clogged with the vapor deposition material.

In order to prevent blockage of such a jet nozzle, there is also a method of increasing the length of the jet nozzle. However, when the length of the jet nozzle becomes longer, this time the tip of the jet nozzle becomes cold easily, the vapor deposition material is captured in the jet nozzle, and eventually, the phenomenon such as clogging of the vapor deposition material in the jet nozzle occurs.

In view of the above circumstances, an object of the present invention is to suppress clogging of a jet nozzle by a vapor deposition material, and to provide a vapor deposition source and a vacuum processing apparatus with high productivity.

In order to achieve the above object, an evaporation source according to one embodiment of the present invention includes a vapor deposition container, a first heating mechanism, a second heating mechanism, a first reflector, and a second reflector.

The vapor deposition container has a container body including a bottom, a side wall extending to the bottom, and a top plate facing the bottom and provided with a jet nozzle, and is formed by the container body and the top plate. A vapor deposition material is accommodated in the enclosed space.

The said 1st heating mechanism opposes the said side wall part.

The said 2nd heating mechanism is opposed to each side part of the said top plate and the said jet nozzle, and is provided spaced apart from the said 1st heating mechanism in the direction which goes to the said top plate from the said bottom part.

The said 1st reflector is opposite to the said 1st heating mechanism, and is provided in the opposite side of the said side wall part.

The second reflector faces the second heating mechanism, is provided on the opposite side of the side portion, and is provided to be spaced apart from the first reflector in the above direction.

According to such an evaporation source, clogging of the jet nozzle by a vapor deposition material is suppressed, and productivity of the vacuum process using an evaporation source improves.

The evaporation source further includes a cooling mechanism surrounding the side wall portion and the side portion, wherein the first reflector and the first heating mechanism are located between the cooling mechanism and the side wall portion, and the second reflector and the second heating mechanism may be located between the cooling mechanism and the side portion.

According to such an evaporation source, since the cooling mechanism which surrounds a vapor deposition container is provided, clogging of the jet nozzle by a vapor deposition material is suppressed more reliably, and productivity of the vacuum process using the vapor deposition source improves.

In the vapor deposition source, a heat shield plate is provided between the bottom and the top plate in the vapor deposition vessel, and the vapor deposition material is accommodated in a space surrounded by the container body and the heat shield plate. and a portion of the heat shield plate may be in contact with the side wall portion.

According to such an evaporation source, since the heat shield plate in contact with the container body is provided in the vapor deposition container, clogging of the jet nozzle by a vapor deposition material is suppressed more reliably, and the productivity of the vacuum process using an evaporation source improves.

In the above evaporation source, the thermal radiation coefficient of the surface of the container body opposite to the spatial region separated by the first reflector and the second reflector is higher than the thermal radiation coefficient of the surface of the container body other than the surface. free of charge

According to such an evaporation source, since the thermal emissivity of the partial surface of a container body is comprised relatively high, clogging of the jet nozzle by a vapor deposition material is suppressed more reliably, and the productivity of vacuum processing using an evaporation source improves.

In the above evaporation source, the surface of the container body facing the spatial region may be a blast-treated surface.

According to such an evaporation source, since the partial surface of a container main body is a blast process surface, clogging of the jet nozzle by a vapor deposition material is suppressed more reliably, and productivity of the vacuum process using an evaporation source improves.

In the above evaporation source, the height h of the first heating mechanism from the bottom with respect to the depth d of the container body may be two-thirds or less of the depth d.

According to such an evaporation source, since an upper heating mechanism and a lower heating mechanism are separated by the said distance, clogging of the jet nozzle by a vapor deposition material is suppressed more reliably, and productivity of the vacuum processing using an evaporation source improves.

In order to achieve the above object, a vacuum processing apparatus according to one embodiment of the present invention includes a vacuum container, the evaporation source, and a substrate holding mechanism facing the evaporation source in the vacuum container.

According to such a vacuum processing apparatus, clogging of the jet nozzle by a vapor deposition material is suppressed, and productivity of the vacuum processing using an evaporation source improves.

As mentioned above, according to this invention, blockage of the jet nozzle by a vapor deposition material is suppressed, and the vapor deposition source and vacuum processing apparatus with high productivity are provided.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing of the vapor deposition source of this embodiment.
Fig. 2 is a schematic top view of an evaporation source according to the present embodiment.
Fig. 3 is a schematic cross-sectional view showing the vacuum processing apparatus of the present embodiment.
Fig. 4 is a schematic cross-sectional view for explaining the action of an evaporation source.
5 is a schematic cross-sectional view according to Modification Example 1 of the present embodiment.
6 is a schematic cross-sectional view according to Modification Example 2 of the present embodiment.
7 is a schematic cross-sectional view according to Modification Example 3 of the present embodiment.
Fig. 8 is a schematic cross-sectional view according to Modification Example 4 of the present embodiment.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings. In each figure, XYZ axis coordinates may be introduced. Moreover, the same code|symbol may be attached|subjected to the same member or the member which has the same function, and after demonstrating the member, description may be abbreviate|omitted suitably.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing of the vapor deposition source of this embodiment. 2 is a schematic top view of an evaporation source according to the present embodiment. Fig. 1 shows a cross section taken along line A1-A1 in Fig. 2 . In FIG. 2, when 30 A of vapor deposition sources are seen from upper direction, in order to show the vapor deposition container 31 contained in 30 A of vapor deposition sources, the heat insulation board 60 is abbreviate|omitted.

The vapor deposition source 30A shown in FIG. 1 is used as a film formation source of the vacuum processing apparatus 1 (FIG. 3). The vapor deposition source 30A includes a vapor deposition vessel (crucible) 31 , a lower heating mechanism (first heating mechanism) 331 , an upper heating mechanism (second heating mechanism) 332 , and a lower reflector (first heating mechanism). A reflector) 341 , an upper reflector (second reflector) 342 , and a heat insulating plate 60 are provided. The lower heating mechanism 331 and the upper heating mechanism 332 are controlled by the control device 80 ( FIG. 3 ).

The vapor deposition container 31 is extended in the uniaxial direction (in the figure, the X-axis direction) as the longitudinal direction. When the vapor deposition container 31 is viewed from the top in the Z-axis direction, the outer shape is, for example, a rectangle. The vapor deposition container 31 has a container body 311 and a top plate 312 .

The container body 311 includes a bottom part 31b and a side wall part 31w extended to the bottom part 31b. The top plate 312 opposes the bottom part 31b. The top plate 312 is mounted on the side wall part 31w. The top plate 312 may be fixed to the side wall part 31w by fitting, or may be fixed to the side wall part 31w by a fixing jig. Moreover, a sealing member may be arrange|positioned between the top plate 312 and the side wall part 31w. The vapor deposition material 30m is accommodated in the space 315 surrounded by the container body 311 and the top plate 312 . The vapor deposition material 30m is an organic material, a metal, etc., for example. The top plate 312 is provided with a plurality of jet nozzles 32 .

Each of the plurality of jet nozzles 32 is arranged in a row image in the longitudinal direction (X-axis direction) of the vapor deposition container 31 at a predetermined interval. Each of the plurality of jet nozzles 32 communicates with the space 315 of the vapor deposition container 31 . From the ejection port 320 , the vapor deposition material 30m filled in the vapor deposition container 31 is ejected. For example, when the vapor deposition material 30m is heated by the lower heating mechanism 331, the vapor of the vapor deposition material 30m is vaporized in the vapor deposition surface 30s (space 315 and the vapor deposition material 30m) of the vapor deposition material 30m. ) and gradually vapor-deposits toward the jet nozzle 32 from the interface.

The jet port 320 of the jet nozzle 32 opposes the board|substrate 90 (FIG. 3). However, in the plurality of ejection nozzles 32 , in order to make the film thickness distribution in the X-axis direction more uniform, the ejection nozzles 32 arranged in the vicinity of both sides of the row are formed on the substrate 90 . inclined to the back. For example, both sides of the plurality of jet nozzles 32 and the central axis 32c of the jet nozzles 32 disposed in the vicinity of both sides intersect the normal line of the top plate 312 .

The lower heating mechanism 331 faces the lower portion of the side wall portion 31w. When the evaporation source 30A is viewed from the Z-axis direction, the lower heating mechanism 331 surrounds the container body 311 . The lower heating mechanism 331 is a heating mechanism of an induction heating system or a resistance heating system.

The upper heating mechanism 332 opposes the side part 312w of the top plate 312 and the side part 32w of the jet nozzle 32 of the lower part in the heat insulation board 60. As shown in FIG. The upper heating mechanism 332 is not provided directly above the vapor deposition surface 30s of 30 m of vapor deposition materials. The upper heating mechanism 332 is a heating mechanism of an induction heating system or a resistance heating system.

When the direction from the bottom 31b to the top plate 312 is the Z-axis direction, the upper heating mechanism 332 is provided to be spaced apart from the lower heating mechanism 331 in the Z-axis direction. When the evaporation source 30A is viewed from the Z-axis direction, the upper heating mechanism 332 surrounds the top plate 312 and the jet nozzle 32 . The lower end of the upper heating mechanism 332 is located, for example, on the lower surface of the top plate 312 (or the upper end of the container body 311 ).

The upper heating mechanism 332 is controlled independently of the lower heating mechanism 331 by the control device 80 . For example, the upper heating mechanism 332 preferentially heats the top plate 312 and the jet nozzle 32 , and the lower heating mechanism 331 preferentially heats the vapor deposition material 30m through the container body 311 . heated with

The lower reflector 341 faces the lower heating mechanism 331 . The lower reflector 341 is provided on the opposite side of the side wall portion 31w. The lower heating mechanism 331 is provided between the lower reflector 341 and the side wall portion 31w. When the evaporation source 30A is viewed from the Z-axis direction, the lower reflector 341 surrounds the container body 311 . The lower reflector 341 is composed of at least one layer of plate material. The lower reflector 341 arranged in the lower heating mechanism 331 may have a support mechanism for supporting the lower heating mechanism 331 . In this case, it is included in the lower heating mechanism 331 . For example, the heater wire is fixedly supported by the lower reflector 341 .

The upper reflector 342 faces the upper heating mechanism 332 . The upper reflector 342 is provided on the opposite side of the side portion 312w of the top plate 312 . The upper reflector 342 is provided to be spaced apart from the lower reflector 341 in the Z-axis direction. The upper heating mechanism 332 is provided between the upper reflector 342 and the top plate 312 . When the deposition source 30A is viewed from the Z-axis direction, the upper reflector 342 surrounds the top plate 312 . The upper reflector 342 is made of at least one ply of plate material. The upper reflector 342 arranged in the upper heating mechanism 332 may have a support mechanism for supporting the upper heating mechanism 332 . In this case, it is included in the upper heating mechanism 332 . For example, the heater wire is fixedly supported by the upper reflector 342 .

In the evaporation source 30A, the height h of the lower heating mechanism 331 from the bottom 31b with respect to the depth d of the container body 311 is set to two-thirds or less. In addition, in this embodiment, let the area|region of the container main body 311 opposing the space area|region A' which the lower heating mechanism 331 and the upper heating mechanism 332 space apart is area|region A. Immediately after the start of vapor deposition, the height of the vapor deposition surface 30s of the vapor deposition material 30m is located in the region A. In FIG. 1, the state which vapor deposition of the vapor deposition material 30m advanced to some extent is shown.

The heat insulating plate 60 covers the upper heating mechanism 332 . Each of the plurality of jet nozzles 32 penetrates, for example, the heat insulation board 60 so as not to be blocked by the heat insulation board 60 . The heat insulating board 60 is comprised by the board|plate material of at least 1 ply.

The container body 311, the top plate 312, and the jet nozzle 32 are metals, such as titanium, molybdenum, tantalum, and stainless steel. The material of the lower reflector 341 and the upper reflector 342 is, for example, a metal such as stainless steel, copper, or aluminum.

3 is a schematic cross-sectional view showing the vacuum processing apparatus of the present embodiment.

The vacuum processing apparatus 1 includes a vacuum container 10 , a substrate support mechanism 20 , an evaporation source 30A, an insulating plate 60 , and a control device 80 . The vacuum processing apparatus 1 is a vapor deposition apparatus which vapor-deposits the vapor deposition material 30m on the board|substrate 90. As shown in FIG.

The vacuum container 10 is a container which maintains a pressure-reduced state. In the vacuum container 10 , the gas inside is exhausted by the exhaust mechanism 70 . A planar shape when the vacuum container 10 is viewed from the substrate support mechanism 20 in a top view in a direction from the substrate support mechanism 20 toward the evaporation source 30A (hereinafter, the Z-axis direction) is, for example, a spherical shape.

The vacuum container 10 accommodates the substrate support mechanism 20 , the vapor deposition source 30A, the heat insulating plate 60 , and the like. The vacuum container 10 may be equipped with a gas supply mechanism capable of supplying gas. Moreover, the pressure gauge which measures the pressure inside the vacuum container 10 may be attached. Moreover, the vacuum container 10 may be provided with the film thickness meter which measures the vapor deposition rate of the film|membrane formed on the board|substrate 90, etc. indirectly.

The substrate support mechanism 20 is located above the vacuum vessel 10 . The substrate support mechanism 20 faces the deposition source 30A in the Z-axis direction. The substrate support mechanism 20 conveys the substrate 90 and the substrate holder 91 in the Y-axis direction while supporting the substrate holder 91 holding the substrate 90 . That is, while the substrate 90 is conveyed, the vapor deposition material 30m is deposited on the substrate 90 .

The substrate 90 is, for example, a spherical large-sized glass substrate. Moreover, the mask member 92 may be provided between the board|substrate 90 and 30 A of vapor deposition sources. Moreover, the heating mechanism which adjusts the temperature of the board|substrate 90 may be provided in the side opposite to the mask member 92 of the board|substrate 90 (back surface side of board|substrate 90).

The vapor deposition source 30A is located in the lower part of the vacuum container 10 . The deposition source 30A faces the substrate 90 in the Z-axis direction. The vapor deposition source 30A is being fixed to a support stand (not shown), for example. The evaporation source 30A extends in a direction (X-axis direction) orthogonal to the direction in which the substrate 90 is conveyed. The vapor deposition source 30A is not limited to one, For example, you may arrange|position a plurality of evaporation sources side by side in the Y-axis direction. In this case, each of the plurality of vapor deposition containers 31 is arranged parallel to each other in the Y-axis direction. Each of the plurality of vapor deposition containers 31 can be filled with different kinds of vapor deposition materials 30 m.

A conveyance mechanism for changing the relative distance between the evaporation source 30A and the substrate 90 may be provided on the evaporation source 30A side. For example, the relative distance between the deposition source 30A and the substrate 90 can be changed by moving the transport mechanism for transporting the deposition source 30A and the deposition source 30A with respect to the fixed substrate 90 . .

The operation of the vapor deposition source 30A will be described. 4 is a schematic cross-sectional view illustrating the action of an evaporation source.

When the vapor deposition material 30m accommodated in the vapor deposition container 31 is heated by the lower heating mechanism 331, the vapor deposition material 30m will vapor-deposit and the vapor pressure of the vapor deposition material 30m will increase. Here, the vapor deposition material 30m in the vapor deposition container 31 may sublimate from a solid substance, melt|dissolve once in a liquid, and you may vapor-deposit through a liquid. Thereby, the vapor deposition material 30m turns into a vapor|steam flow from each of the some ejection nozzle 32, and it ejects. In FIG. 4, the flow of the heat|fever which the vapor deposition material 30m receives from the lower heating mechanism 331 is shown typically by the arrow h1.

In addition, even if the vapor of the vapor deposition material 30m is incident on each inner wall of the top plate 312 and the jet nozzle 32 , the top plate 312 and the jet nozzle 32 are connected to the upper heating mechanism 332 . ) is heated by Thereby, in each inner wall, detachment|desorption of the vapor deposition material 30m occurs. In FIG. 4 , the flow of heat received by the top plate 312 and the jet nozzle 32 from the upper heating mechanism 332 is schematically represented by an arrow h2. As a result, it becomes difficult to deposit the vapor deposition material 30m on the inner wall of each of the top plate 312 and the jet nozzle 32.

Therefore, the vapor deposition material 30m vapor-deposited from the vapor deposition surface 30s is not captured inside the vapor deposition container 31 and the ejection nozzle 32, but passes through the space 315 and the ejection nozzle 32, and passes through the substrate. It vapor-deposits toward (90).

On the other hand, a part of the heat received by the top plate 312 by the upper heating mechanism 332 passes through the side wall part 31w of the container body 311 and conducts toward the bottom part 31b. In Fig. 4, a partial flow of the column is schematically indicated by an arrow h3.

However, in the column indicated by arrow h3, region A of the container body 311 is a heating mechanism (lower heating mechanism 331, upper heating mechanism 332) and a reflector (lower reflector 341, upper reflector 342). )), it is discharged into the vacuum container 10 through the area A. Thereby, the vapor deposition material 30m is hard to be influenced by the upper heating mechanism 332, and is preferentially heated by the lower heating mechanism 331. As shown in FIG.

If there is no heat dissipating region such as the A region, and the vapor deposition material 30m is subjected to the influence of the upper heating mechanism 332 , the vapor deposition material 30m is, in addition to the lower heating mechanism 331 , the upper heating mechanism 332 . ) is also heated. Accordingly, the deposition amount of the deposition material 30m to be deposited from the deposition surface 30s becomes excessive, and the top plate is larger than the amount by which the deposition material 30m is separated from each inner wall of the top plate 312 and the jet nozzle 32 . The quantity which vapor deposition material 30m injects into each inner wall of 312 and the jet nozzle 32 will increase. As a result, on the inner wall of each of the top plate 312 and the jet nozzle 32 , the deposition material 30m is deposited, for example, clogging of the deposition material 30m in the jet nozzle 32 , clogging) may occur.

In the present embodiment, the functions of the upper and lower heating mechanisms are divided, the lower heating mechanism 331 preferentially heats the vapor deposition material 30m, and the upper heating mechanism 332 includes the top plate 312 and the jet nozzle 32 . is heated first. In other words, there is a temperature difference between the portion heated by the lower heating mechanism 331 and the portion heated by the upper heating mechanism 332 .

Accordingly, the deposition material 30m is separated from the inner wall of each of the top plate 312 and the jet nozzle 32 rather than the frequency at which the deposition material 30m is incident on the inner wall of the top plate 312 and the jet nozzle 32. A high frequency state is always maintained, and clogging of the vapor deposition material 30m in the jet nozzle 32 becomes difficult to occur.

In addition, in the evaporation source 30A, the upper heating mechanism 332 does not face the top plate 312 in the Z-axis direction. Accordingly, during maintenance of the deposition source 30A, the upper heating mechanism 332 does not interfere with the operation of separating the top plate 312 from the container body 311, and the top plate 312 can be easily removed from the container body 311. ) can be separated from In addition, since the lower heating mechanism 331 is also provided along the Z-axis direction, even when the entire vapor deposition vessel 31 is pulled upward, the lower heating mechanism 331 and the upper heating mechanism 332 are used for the above operation. It is not a hindrance.

Moreover, since the upper heating mechanism 332 is provided along the Z-axis direction, the amount of heat received by the substrate 90 from the upper heating mechanism 332 is low, and the temperature of the substrate 90 is increased by the upper heating mechanism 332 . is suppressed

(Variation example 1)

5 is a schematic cross-sectional view according to Modification Example 1 of the present embodiment.

The evaporation source 30B further includes a cooling mechanism 40 . When the vapor deposition source 30B is viewed from the Z-axis direction, the cooling mechanism 40 surrounds the vapor deposition container 31 . For example, the cooling mechanism 40 surrounds the side wall portion 31w of the container body 311 and the side portion 312w of the top plate 312 . The cooling mechanism 40 is composed of a plate member having a water channel embedded therein, or a plate member having a water channel fixed to the surface thereof.

The lower reflector 341 and the lower heating mechanism 331 are located between the cooling mechanism 40 and the side wall portion 31w. The upper reflector 342 and the upper heating mechanism 332 are located between the cooling mechanism 40 and the side part 312w. Region A faces the cooling mechanism 40 .

Accordingly, the heat indicated by the arrow h3 ( FIG. 4 ) is easily absorbed by the cooling mechanism 40 , and the heat indicated by the arrow h3 is more efficiently transferred to the outside of the side wall portion 31w through the area A is emitted as Thereby, the top plate 312 and the jet nozzle 32 are heated more efficiently by the upper heating mechanism 332, and the vapor deposition material 30m is heated more efficiently by the lower heating mechanism 331. .

(Variation example 2)

6 is a schematic cross-sectional view according to Modification Example 2 of the present embodiment.

In the deposition source 30C, a heat shielding plate 50 is provided inside the deposition vessel 31 . The heat shield plate 50 is provided between the bottom part 31b and the top plate 312 . The vapor deposition material 30m is accommodated in the space 315 surrounded by the container body 311 and the heat shield 50 . A part of the heat shield plate 50 is in contact with the side wall portion 31w. The side wall portion 31w is provided with a locking portion 313 for locking the heat shielding plate 50 .

The heat shielding plate 50 has a flat plate portion 501 and a pair of bent portions 502 extended to the flat plate portion 501 . The bent portion 502 intersects with the flat plate portion 501 and is, for example, substantially orthogonal to each other. The bent portion 502 faces the region A of the side wall portion 31w and is in contact with the region A of the side wall portion 31w. Further, the flat plate portion 501 is provided with a plurality of hole portions 510 arranged side by side in the Y-axis direction. The hole 510 is not limited to the Y-axis direction, and may be arranged side by side in the X-axis direction. The vapor deposition material 30m vapor-deposited from 30 s of vapor deposition surfaces passes through the hole part 510, and advances to the ejection nozzle 32.

Even if the residual heat stored in the top plate 312 is radiated from the top plate 312 toward the vapor deposition material 30 m due to the arrangement of the heat shield plate 50 , the radiated heat is blocked by the heat shield plate 50 . do. And, since the bent portion 502 of the heat shield plate 50 is in contact with the region A of the side wall portion 31w, radiated heat is difficult to stay in the heat shield plate 50, and the bent portion 502 and the side wall portion 31w. It is discharged to the outside of the side wall portion 31w through the.

In this way, in the evaporation source 30C, in addition to the heat (FIG. 4) indicated by the arrow h3 being emitted to the outside of the side wall portion 31w through the region A, the residual heat stored in the top plate 312 is transferred to the heat shield plate ( 50) is blocked. Then, this residual heat is discharged to the outside of the side wall portion 31w through the bent portion 502 and the side wall portion 31w. Thereby, the top plate 312 and the jet nozzle 32 are heated more efficiently by the upper heating mechanism 332, and the vapor deposition material 30m is heated more efficiently by the lower heating mechanism 331. .

(Variation example 3)

7 is a schematic cross-sectional view according to Modification Example 3 of the present embodiment.

In the evaporation source 30D, the thermal emissivity of the surface 314 of the container body 311 in the region A is relatively higher than that of the surfaces of the container body 311 other than the surface 314 . For example, surface 314 is a blasted surface having a surface roughness that is coarser than surface roughness other than surface 314, for example, optionally treated with a ceramic bead blast. For example, the thermal emissivity of the surface 314 is 0.3 or more, whereas the thermal emissivity of surfaces other than the surface 314 is set to 0.2 or less.

With this configuration, since the heat (FIG. 4) indicated by the arrow h3 is more efficiently discharged to the outside of the side wall portion 31w past the surface 311, the top plate 312 and the jet nozzle 32 are It is heated more efficiently by the heating mechanism 332, and the vapor deposition material 30m is heated more efficiently by the lower heating mechanism 331. As shown in FIG.

(Variation example 4)

8 is a schematic cross-sectional view according to Modification Example 4 of the present embodiment.

In the deposition source 30E, a plurality of fins 35 are provided in the container body 311 in the region A.

With this configuration, since the heat (FIG. 4) indicated by the arrow h3 is more efficiently discharged to the outside of the side wall portion 31w past the plurality of fins 35, the top plate 312 and the jet nozzle 32 are , is heated more efficiently by the upper heating mechanism 332 , and the vapor deposition material 30m is heated more efficiently by the lower heating mechanism 331 .

As mentioned above, although embodiment of this invention was described, this invention is not limited only to the above-mentioned embodiment, It goes without saying that various changes can be added. For example, at least two of the evaporation sources 30B, 30C, 30D, and 30E may be combined. Each embodiment is not limited to an independent form, It may be compounded as much as possible technically.

In addition, "opposing" in this specification includes the case where a certain member faces another member through a 3rd member other than the case where a certain member directly faces another member. In the latter case, at least a part of the third member is positioned between a certain member and another member.

One … vacuum processing unit
10 … vacuum vessel
20 … substrate support mechanism
30A, 30B, 30C, 30D, 30E… vapor source
30m … vapor deposition material
30s … deposition surface
31 … deposition vessel
31b … bottom
31w … side wall
32 … jet nozzle
32c … central axis
32w … side
35 … pin
40 … cooling mechanism
50 … heat shield
60 … insulation board
70 … exhaust mechanism
80 … controller
90 … Board
91 … substrate holder
92 … no mask
311 … container body
312 … top plate
312w … side
313 … stepfather
314 … surface
315 … space
320 … vent
331 … lower heating device
332 … upper heating device
341 … lower reflector
342 … upper reflector
501 … flat panel
502 … bend
510 … hole

Claims (7)

A vapor deposition container having a container body including a bottom and a side wall extending to the bottom, and a top plate facing the bottom and provided with a jet nozzle, wherein a deposition material is accommodated in a space surrounded by the container body and the top plate;
a first heating mechanism facing the side wall portion;
a second heating mechanism opposed to each side of the top plate and the jet nozzle and provided to be spaced apart from the first heating mechanism in a direction from the bottom to the top plate;
a first reflector facing the first heating mechanism and provided on an opposite side of the side wall portion;
A second reflector opposite to the second heating mechanism, provided on the opposite side of the side portion, and spaced apart from the first reflector in the above direction
A vapor deposition source comprising a. According to claim 1,
The side wall portion and a cooling mechanism surrounding the side portion
provide more,
the first reflector and the first heating mechanism are positioned between the cooling mechanism and the side wall portion;
The second reflector and the second heating mechanism are positioned between the cooling mechanism and the side portion.
vapor source. 3. The method of claim 1 or 2,
A heat shield is installed between the bottom and the top plate in the deposition vessel,
The deposition material is accommodated in a space surrounded by the container body and the heat shield plate,
A portion of the heat shield plate is in contact with the side wall portion
vapor source. 4. The method according to any one of claims 1 to 3,
The thermal radiation coefficient of the surface of the container body opposite to the space region separated by the first reflector and the second reflector is,
higher than the thermal emissivity of the surface of the container body other than the surface
vapor source. 5. The method of claim 4,
The surface of the container body opposite to the space region is a blast-treated surface
vapor source. 6. The method according to any one of claims 1 to 5,
the height h of the first heating mechanism from the bottom to the depth d of the container body is two-thirds or less of the depth d
vapor source. vacuum vessel,
a vapor deposition container having a container body including a bottom and a side wall extending to the bottom, and a top plate facing the bottom and provided with a jet nozzle, wherein a deposition material is accommodated in a space surrounded by the container body and the top plate; a first heating mechanism opposed to the side wall portion; a second heating mechanism opposed to the side portion of the top plate and provided to be spaced apart from the first heating mechanism in a direction from the bottom to the top plate; and the first heating mechanism; An evaporation source having a first reflector opposite to the side wall portion, and a second reflector opposite to the second heating mechanism, provided on the opposite side of the side portion, and spaced apart from the first reflector in the above direction. and,
In the vacuum container, a substrate holding mechanism facing the evaporation source
A vacuum processing device comprising a.

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