JPWO2021049146A1 - Deposition source and vacuum processing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress blockage of a ejection nozzle due to a vapor-deposited material. SOLUTION: In a vapor deposition source, an evaporation container has a container main body including a bottom portion and a side wall portion connected to the bottom portion, and a top plate facing the bottom portion and provided with an ejection nozzle. The vaporized material is housed in the space surrounded by the container body and the top plate. The first heating mechanism faces the side wall portion. The second heating mechanism is provided so as to face each side portion of the top plate and the ejection nozzle, and is separated from the first heating mechanism in the direction from the bottom portion toward the top plate. The first reflector faces the first heating mechanism and is provided on the opposite side of the side wall portion. The second reflector is provided on the opposite side of the side portion so as to face the second heating mechanism, and is provided apart from the first reflector in the above direction. [Selection diagram] Fig. 1

Description

The present invention relates to a vapor deposition source and a vacuum processing apparatus.

Among the vacuum processing devices, for example, there is a device for depositing an organic material on a large substrate for a display. In such an apparatus, the substrate and the vapor deposition source are opposed to each other, and the vapor deposition material is ejected from the vapor deposition source toward the substrate to deposit the vapor deposition material on the substrate.

The vaporization source includes an evaporation container (crucible) for accommodating the vaporized material, a top plate for closing the evaporation container, an ejection nozzle provided on the top plate, and a heating mechanism for heating the evaporation vessel, the top plate, and the ejection nozzle. (See, for example, Patent Document 1). When the vapor-deposited material is heated by the heating mechanism, the vapor-deposited material is ejected from the ejection nozzle toward the substrate.

Japanese Unexamined Patent Publication No. 2012-214835

One of the measures to increase the production amount using the vacuum processing apparatus as described above is a method of extending the continuous operation time. However, the thin-film deposition material adheres not only to the substrate but also to the portion around the ejection nozzle. Therefore, if the continuous operation time is long, the ejection nozzle may be covered with the vapor deposition material deposited on the peripheral portion, and the ejection nozzle may be blocked by the vapor deposition material.

In order to prevent such blockage of the ejection nozzle, there is also a method of increasing the length of the ejection nozzle. However, when the length of the ejection nozzle becomes long, the tip of the ejection nozzle becomes easy to cool, and the vapor-deposited material is trapped in the ejection nozzle, and after all, the vapor-deposited material is clogged in the ejection nozzle. Get up.

In view of the above circumstances, an object of the present invention is to suppress blockage of the ejection nozzle by the vapor deposition material and to provide a highly productive vapor deposition source and a vacuum processing apparatus.

In order to achieve the above object, the vapor deposition source according to one embodiment of the present invention includes an evaporation container, a first heating mechanism, a second heating mechanism, a first reflector, and a second reflector.
The evaporation container has a container body including a bottom portion and a side wall portion connected to the bottom portion, and a top plate facing the bottom portion and provided with a ejection nozzle. The vaporized material is housed in the space surrounded by.
The first heating mechanism faces the side wall portion.
The second heating mechanism faces the side portions of the top plate and the ejection nozzle, and is provided apart from the first heating mechanism in the direction from the bottom portion toward the top plate.
The first reflector faces the first heating mechanism and is provided on the opposite side of the side wall portion.
The second reflector is provided on the opposite side of the side portion so as to face the second heating mechanism, and is provided apart from the first reflector in the above direction.

According to such a thin-film deposition source, blockage of the ejection nozzle due to the thin-film deposition material is suppressed, and the productivity of vacuum processing using the thin-film deposition source is improved.

The vapor deposition source further includes a cooling mechanism that surrounds the side wall portion and the side portion, and the first reflector and the first heating mechanism are located between the cooling mechanism and the side wall portion. The 2 reflector and the second heating mechanism may be located between the cooling mechanism and the side portion.

According to such a vapor deposition source, since the cooling mechanism surrounding the evaporation container is provided, the blockage of the ejection nozzle by the vapor deposition material is more reliably suppressed, and the productivity of vacuum processing using the vapor deposition source is improved. ..

In the vapor deposition source, a heat shield is provided between the bottom and the top plate inside the evaporation container, and the vapor deposition material is housed in a space surrounded by the container body and the heat shield. Then, a part of the heat shield plate may be in contact with the side wall portion.

According to such a thin-film deposition source, since a heat shield plate in contact with the container body is provided in the evaporation container, blockage of the ejection nozzle by the vapor-deposited material is more reliably suppressed, and vacuum processing using the thin-film deposition source can be performed. Productivity is improved.

In the vapor deposition source, the heat emissivity of the surface of the container body facing the space region where the first reflector and the second reflector are separated is higher than the heat emissivity of the surface of the container body other than the surface. May be high.

According to such a thin-film deposition source, since the heat emissivity of a part of the surface of the container body is relatively high, the blockage of the ejection nozzle due to the thin-film deposition material is more reliably suppressed, and the thin-film deposition source is used. The productivity of vacuum processing is improved.

In the above-mentioned vapor deposition source, the surface of the container body facing the space region may be a blast-treated surface.

According to such a thin-film deposition source, since a part of the surface of the container body is a blast-treated surface, the blockage of the ejection nozzle by the thin-film deposition material is more reliably suppressed, and the productivity of vacuum treatment using the thin-film deposition source is improved. improves.

In the vapor deposition source, the height h of the first heating mechanism from the bottom with respect to the depth d of the container body may be two-thirds or less of the depth d.

According to such a thin-film deposition source, since the upper heating mechanism and the lower heating mechanism are separated by the above distance, the blockage of the ejection nozzle due to the thin-film deposition material is more reliably suppressed, and the vacuum treatment using the thin-film deposition source is performed. Productivity is improved.

In order to achieve the above object, the vacuum processing apparatus according to one embodiment of the present invention includes a vacuum vessel, the vapor deposition source, and a substrate holding mechanism in the vacuum vessel facing the vapor deposition source.

According to such a vacuum processing apparatus, the blockage of the ejection nozzle due to the vapor deposition material is suppressed, and the productivity of the vacuum processing using the vapor deposition source is improved.

As described above, according to the present invention, it is possible to provide a highly productive vapor deposition source and a vacuum processing apparatus by suppressing blockage of the ejection nozzle due to the vapor deposition material.

It is a schematic cross-sectional view of the vapor deposition source of this embodiment. It is a schematic top view of the vapor deposition source of this embodiment. It is a schematic cross-sectional view which shows the vacuum processing apparatus of this embodiment. It is a schematic cross-sectional view explaining the operation of the vapor deposition source. It is a schematic cross-sectional view which concerns on the modification 1 of this embodiment. It is a schematic cross-sectional view which concerns on the modification 2 of this embodiment. It is a schematic cross-sectional view which concerns on the modification 3 of this embodiment. It is a schematic cross-sectional view which concerns on the modification 4 of this embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. XYZ axis coordinates may be introduced in each drawing. Further, the same member or a member having the same function may be designated by the same reference numeral, and the description may be omitted as appropriate after the description of the member.

FIG. 1 is a schematic cross-sectional view of the vapor deposition source of the present embodiment. FIG. 2 is a schematic top view of the vapor deposition source of the present embodiment. FIG. 1 shows a cross section taken along line A1-A1 of FIG. In FIG. 2, when the vapor deposition source 30A is viewed from above, the heat insulating plate 60 is omitted to show the evaporation container 31 included in the vapor deposition source 30A.

The thin-film deposition source 30A shown in FIG. 1 is used as a film-forming source for the vacuum processing apparatus 1 (FIG. 3). The vapor deposition source 30A includes an evaporation container (crucible) 31, a lower heating mechanism (first heating mechanism) 331, an upper heating mechanism (second heating mechanism) 332, a lower reflector (first reflector) 341, and an upper reflector (upper reflector). A second reflector) 342 and a heat insulating plate 60 are provided. The lower heating mechanism 331 and the upper heating mechanism 332 are controlled by the control device 80 (FIG. 3).

The evaporation vessel 31 extends in the uniaxial direction (in the figure, the X-axis direction) as the longitudinal direction. When the evaporation container 31 is viewed from above in the Z-axis direction, its outer shape is, for example, a rectangle. The evaporation container 31 has a container body 311 and a top plate 312.

The container body 311 includes a bottom portion 31b and a side wall portion 31w connected to the bottom portion 31b. The top plate 312 faces the bottom 31b. The top plate 312 is placed on the side wall portion 31w. The top plate 312 may be fixed to the side wall portion 31w by fitting, or may be fixed to the side wall portion 31w by a fixing jig. Further, a seal member may be arranged between the top plate 312 and the side wall portion 31w. The vapor deposition material 30 m is housed in the space 315 surrounded by the container body 311 and the top plate 312. The vapor-deposited material 30 m is, for example, an organic material, a metal, or the like. The top plate 312 is provided with a plurality of ejection nozzles 32.

Each of the plurality of ejection nozzles 32 is arranged in a row in the longitudinal direction (X-axis direction) of the evaporation vessel 31 at a predetermined interval. Each of the plurality of ejection nozzles 32 communicates with the space 315 of the evaporation vessel 31. The vaporized material 30 m filled in the evaporation container 31 is ejected from the ejection port 320. For example, when the vapor-deposited material 30 m is heated by the lower heating mechanism 331, the steam of the vapor-deposited material 30 m gradually evaporates from the evaporation surface 30 s (interface between the space 315 and the vapor-deposited material 30 m) of the vapor-deposited material 30 m toward the ejection nozzle 32. ..

The ejection port 320 of the ejection nozzle 32 faces the substrate 90 (FIG. 3). However, in the plurality of ejection nozzles 32, the ejection nozzles 32 arranged near both sides of the row are inclined so as to disobey the substrate 90 in order to make the film thickness distribution in the X-axis direction more uniform. For example, the central axes 32c of the ejection nozzles 32 arranged on both sides of the plurality of ejection nozzles 32 and in the vicinity of both sides intersect the normal line of the top plate 312.

The lower heating mechanism 331 faces the lower part of the side wall portion 31w. When the vapor deposition source 30A is viewed from the Z-axis direction, the lower heating mechanism 331 surrounds the container body 311. The lower heating mechanism 331 is an induction heating type or resistance heating type heating mechanism.

The upper heating mechanism 332 faces the side portion 312w of the top plate 312 and the side portion 32w of the ejection nozzle 32 below the heat insulating plate 60. The upper heating mechanism 332 is not provided directly above the evaporation surface 30s of the vapor deposition material 30m. The upper heating mechanism 332 is an induction heating type or resistance heating type heating mechanism.

When the direction from the bottom portion 31b to the top plate 312 is the Z-axis direction, the upper heating mechanism 332 is provided so as to be separated from the lower heating mechanism 331 in the Z-axis direction. When the vapor deposition source 30A is viewed from the Z-axis direction, the upper heating mechanism 332 surrounds the top plate 312 and the ejection nozzle 32. The lower end of the upper heating mechanism 332 is located, for example, on the lower surface of the top plate 312 (or the upper end of the container body 311).

The upper heating mechanism 332 is controlled by the control device 80 independently of the lower heating mechanism 331. For example, the upper heating mechanism 332 preferentially heats the top plate 312 and the ejection nozzle 32, and the lower heating mechanism 331 preferentially heats the vapor-deposited material 30 m via the container body 311.

The lower reflector 341 faces the lower heating mechanism 331. The lower reflector 341 is provided on the opposite side of the side wall portion 31w. The lower heating mechanism 331 is provided between the lower reflector 341 and the side wall portion 31w. When the vapor deposition source 30A is viewed from the Z-axis direction, the lower reflector 341 surrounds the container body 311. The lower reflector 341 is composed of at least a single plate material. The lower reflector 341 arranged in the lower heating mechanism 331 may have a support mechanism for supporting the lower heating mechanism 331. In this case, for example, the heater wire included in the lower heating mechanism 331 is fixedly supported by the lower reflector 341.

The upper reflector 342 faces the upper heating mechanism 332. The upper reflector 342 is provided on the opposite side of the side portion 312w of the top plate 312. The upper reflector 342 is provided so as to be separated from the lower reflector 341 in the Z-axis direction. The upper heating mechanism 332 is provided between the upper reflector 342 and the top plate 312. When the vapor deposition source 30A is viewed from the Z-axis direction, the upper reflector 342 surrounds the top plate 312. The upper reflector 342 is composed of at least a single plate material. The upper reflector 342 aligned with the upper heating mechanism 332 may have a support mechanism for supporting the upper heating mechanism 332. In this case, for example, the heater wire included in the upper heating mechanism 332 is fixedly supported by the upper reflector 342.

In the vapor deposition source 30A, the height h of the lower heating mechanism 331 from the bottom 31b is set to two-thirds or less with respect to the depth d of the container body 311. Further, in the present embodiment, the region A of the container body 311 facing the space region A'where the lower heating mechanism 331 and the upper heating mechanism 332 are separated from each other is defined as the region A. Immediately after the start of vaporization, the height of the evaporation surface 30s of the vaporized material 30 m is located in the region A. FIG. 1 shows a state in which the vaporization of the vaporized material 30 m has progressed to some extent.

The heat insulating plate 60 covers the upper heating mechanism 332. Each of the plurality of ejection nozzles 32 penetrates, for example, the heat insulating plate 60 so as not to be blocked by the heat insulating plate 60. The heat insulating plate 60 is composed of at least a single plate material.

The container body 311, the top plate 312, and the ejection nozzle 32 are made of metals such as titanium, molybdenum, tantalum, and stainless steel. The material of the lower reflector 341 and the upper reflector 342 is, for example, a metal such as stainless steel, copper, or aluminum.

FIG. 3 is a schematic cross-sectional view showing the vacuum processing apparatus of this embodiment.

The vacuum processing device 1 includes a vacuum container 10, a substrate support mechanism 20, a vapor deposition source 30A, a heat insulating plate 60, and a control device 80. The vacuum processing apparatus 1 is a vapor deposition apparatus that deposits a vapor deposition material 30 m on a substrate 90.

The vacuum container 10 is a container that maintains a reduced pressure state. The gas inside the vacuum container 10 is exhausted by the exhaust mechanism 70. The planar shape of the vacuum vessel 10 when viewed from above in the direction from the substrate support mechanism 20 toward the vapor deposition source 30A (hereinafter, the Z-axis direction) is, for example, a rectangular shape.

The vacuum vessel 10 houses the substrate support mechanism 20, the vapor deposition source 30A, the heat insulating plate 60, and the like. The vacuum vessel 10 may be provided with a gas supply mechanism capable of supplying gas. Further, the vacuum vessel 10 may be equipped with a pressure gauge for measuring the pressure inside the vacuum vessel 10. Further, the vacuum vessel 10 may be provided with a film thickness meter that indirectly measures the vapor deposition rate of the film formed on the substrate 90.

The substrate support mechanism 20 is located above the vacuum vessel 10. The substrate support mechanism 20 faces the vapor deposition source 30A in the Z-axis direction. The substrate support mechanism 20 conveys the substrate 90 and the substrate holder 91 in the Y-axis direction while supporting the substrate holder 91 that holds the substrate 90. That is, the vapor deposition material 30 m is vapor-deposited on the substrate 90 while the substrate 90 is conveyed.

The substrate 90 is, for example, a large rectangular glass substrate. Further, a mask member 92 may be provided between the substrate 90 and the vapor deposition source 30A. Further, a heating mechanism for adjusting the temperature of the substrate 90 may be provided on the side of the substrate 90 opposite to the mask member 92 (the back surface side of the substrate 90).

The vapor deposition source 30A is located at the bottom of the vacuum vessel 10. The thin-film deposition source 30A faces the substrate 90 in the Z-axis direction. The vapor deposition source 30A is fixed to, for example, a support (not shown). The vapor deposition source 30A extends in a direction (X-axis direction) orthogonal to the direction in which the substrate 90 is conveyed. The number of thin-film deposition sources 30A is not limited to one, and for example, a plurality of thin-film deposition sources 30A may be arranged side by side in the Y-axis direction. In this case, each of the plurality of evaporation containers 31 is parallel to each other and is arranged in the Y-axis direction. Each of the plurality of evaporation containers 31 can be filled with 30 m of different types of vaporized material.

The transport mechanism for changing the relative distance between the vapor deposition source 30A and the substrate 90 may be provided on the vapor deposition source 30A side. For example, the relative distance between the vapor deposition source 30A and the substrate 90 can be changed by moving the vapor deposition source 30A and the transport mechanism that conveys the vapor deposition source 30A to the fixed substrate 90.

The operation of the vapor deposition source 30A will be described. FIG. 4 is a schematic cross-sectional view illustrating the operation of the vapor deposition source.

The vapor-deposited material 30 m housed in the evaporation container 31 is heated by the lower heating mechanism 331, the vapor-deposited material 30 m evaporates, and the vapor pressure of the vapor-deposited material 30 m increases. Here, the vaporized material 30 m in the evaporation container 31 may be sublimated from a solid material, or may be once melted into a liquid and then evaporated through the liquid. As a result, the vapor deposition material 30 m is mounded as a steam flow from each of the plurality of ejection nozzles 32. In FIG. 4, the heat flow received by the vapor-deposited material 30 m from the lower heating mechanism 331 is schematically indicated by an arrow h1.

Further, even if the steam of the vapor deposition material 30 m is incident on the inner walls of the top plate 312 and the ejection nozzle 32, the top plate 312 and the ejection nozzle 32 are heated by the upper heating mechanism 332. As a result, the vapor deposition material 30 m is separated from each inner wall. In FIG. 4, the flow of heat received by the top plate 312 and the ejection nozzle 32 from the upper heating mechanism 332 is schematically indicated by an arrow h2. As a result, the vapor deposition material 30 m is less likely to be deposited on the inner walls of the top plate 312 and the ejection nozzle 32.

Therefore, the vaporized material 30 m evaporated from the evaporation surface 30s evaporates toward the substrate 90 via the space 315 and the ejection nozzle 32 without being captured in the evaporation container 31 and the ejection nozzle 32.

On the other hand, a part of the heat received by the top plate 312 by the upper heating mechanism 332 is conducted toward the bottom 31b through the side wall portion 31w of the container body 311. In FIG. 4, a part of the heat flow is schematically indicated by an arrow h3.

However, the heat indicated by the arrow h3 is the region A because the region A of the container body 311 is released from the heating mechanism (lower heating mechanism 331, upper heating mechanism 332) and the reflector (lower reflector 341, upper reflector 342). It is discharged into the vacuum container 10 through. As a result, the thin-film deposition material 30 m is not easily affected by the upper heating mechanism 332, and is preferentially heated by the lower heating mechanism 331.

If there is no heat release region like the A region and the vapor deposition material 30m is affected by the upper heating mechanism 332, the vapor deposition material 30m is heated not only by the lower heating mechanism 331 but also by the upper heating mechanism 332. It ends up. As a result, the amount of evaporation of the vaporized material 30m that evaporates from the evaporation surface 30s becomes excessive, and the amount of the vaporized material 30m that separates from the inner walls of the top plate 312 and the ejection nozzle 32 is larger than the amount that the vapor deposition material 30m separates from the top plate 312 and the ejection nozzle 32. The amount of the vaporized material 30 m incident on each inner wall of the above increases. As a result, the vapor deposition material 30 m is deposited on the inner walls of the top plate 312 and the ejection nozzle 32, and for example, the vapor deposition material 30 m at the ejection nozzle 32 may be clogged.

In the present embodiment, the functions of the upper and lower heating mechanisms are separated, the lower heating mechanism 331 preferentially heats the vapor-deposited material 30 m, and the upper heating mechanism 332 preferentially heats the top plate 312 and the ejection nozzle 32. In other words, there is a temperature difference between the portion heated by the lower heating mechanism 331 and the portion heated by the upper heating mechanism 332.

As a result, the frequency at which the vapor-deposited material 30m separates from the inner walls of the top plate 312 and the ejection nozzle 32 is always higher than the frequency with which the vapor-deposited material 30m is incident on the inner walls of the top plate 312 and the ejection nozzle 32. The vapor deposition material 30 m at the ejection nozzle 32 is less likely to be clogged.

Further, in the vapor deposition source 30A, the upper heating mechanism 332 does not face the top plate 312 in the Z-axis direction. As a result, during maintenance of the vapor deposition source 30A, the upper heating mechanism 332 does not interfere with the work of removing the top plate 312 from the container body 311 and the top plate 312 can be easily removed from the container body 311. Further, since the lower heating mechanism 331 is also provided along the Z-axis direction, the lower heating mechanism 331 and the upper heating mechanism 332 do not interfere with the work even when the entire evaporation container 31 is pulled upward.

Further, since the upper heating mechanism 332 is provided along the Z-axis direction, the amount of heat received by the substrate 90 from the upper heating mechanism 332 is low, and the temperature rise of the substrate 90 by the upper heating mechanism 332 is suppressed.

(Modification example 1)

FIG. 5 is a schematic cross-sectional view according to the first modification of the present embodiment.

The vapor deposition source 30B further includes a cooling mechanism 40. When the vapor deposition source 30B is viewed from the Z-axis direction, the cooling mechanism 40 surrounds the evaporation container 31. For example, the cooling mechanism 40 surrounds the side wall portion 31w of the container body 311 and the side portion 312w of the top plate 312. The cooling mechanism 40 is composed of a plate member in which a water channel is embedded inside or a plate member in which a water channel is fixed on the surface.

The lower reflector 341 and the lower heating mechanism 331 are located between the cooling mechanism 40 and the side wall portion 31w. The upper reflector 342 and the upper heating mechanism 332 are located between the cooling mechanism 40 and the side portion 312w. The region A faces the cooling mechanism 40.

As a result, the heat indicated by the arrow h3 (FIG. 4) is easily absorbed by the cooling mechanism 40, and the heat indicated by the arrow h3 is more efficiently released to the outside of the side wall portion 31w through the region A. As a result, the top plate 312 and the ejection nozzle 32 are heated more efficiently by the upper heating mechanism 332, and the vapor-deposited material 30 m is heated more efficiently by the lower heating mechanism 331.

(Modification 2)

FIG. 6 is a schematic cross-sectional view according to the second modification of the present embodiment.

In the vapor deposition source 30C, a heat shield plate 50 is provided inside the evaporation container 31. The heat shield plate 50 is provided between the bottom portion 31b and the top plate 312. The thin-film deposition material 30 m is housed in a space 315 surrounded by the container body 311 and the heat shield plate 50. A part of the heat shield plate 50 is in contact with the side wall portion 31w. The side wall portion 31w is provided with a locking portion 313 for locking the heat shield plate 50.

The heat shield plate 50 has a flat plate portion 501 and a pair of bent portions 502 connected to the flat plate portion 501. The bent portion 502 intersects the flat plate portion 501 and is, for example, substantially orthogonal to the flat plate portion 501. The bent portion 502 faces the A region of the side wall portion 31w and is in contact with the A region of the side wall portion 31w. Further, the flat plate portion 501 is provided with a plurality of hole portions 510 arranged side by side in the Y-axis direction. The holes 510 are not limited to the Y-axis direction, and may be arranged side by side in the X-axis direction. The vaporized material 30 m evaporated from the evaporation surface 30s passes through the hole 510 and proceeds to the ejection nozzle 32.

Due to the arrangement of the heat shield plate 50, even if the residual heat stored in the top plate 312 is radiated from the top plate 312 toward the vapor deposition material 30 m, this radiant heat is blocked by the heat shield plate 50. Since the bent portion 502 of the heat shield plate 50 is in contact with the A region of the side wall portion 31w, the radiant heat is less likely to accumulate in the heat shield plate 50, and the radiant heat is less likely to accumulate through the bent portion 502 and the side wall portion 31w. It is discharged to the outside of the side wall portion 31w.

As described above, in the vapor deposition source 30C, the heat indicated by the arrow h3 (FIG. 4) is released to the outside of the side wall portion 31w through the region A, and the residual heat stored in the top plate 312 is blocked by the heat shield plate 50. Then, this residual heat is released to the outside of the side wall portion 31w via the bent portion 502 and the side wall portion 31w. As a result, the top plate 312 and the ejection nozzle 32 are heated more efficiently by the upper heating mechanism 332, and the vapor-deposited material 30 m is heated more efficiently by the lower heating mechanism 331.

(Modification example 3)

FIG. 7 is a schematic cross-sectional view according to the third modification of the present embodiment.

In the vapor deposition source 30D, the heat emissivity of the surface 314 of the container body 311 in the region A is relatively higher than the heat emissivity of the surface of the container body 311 other than the surface 314. For example, the surface 314 has a surface roughness coarser than the surface roughness other than the surface 314, and is, for example, a blasted surface selectively treated with ceramic bead blasting. For example, the heat emissivity of the surface 314 is 0.3 or more, while the heat emissivity of the surfaces other than the surface 314 is set to 0.2 or less.

With such a configuration, the heat indicated by the arrow h3 (FIG. 4) is more efficiently released to the outside of the side wall portion 31w through the surface 311. It is heated efficiently, and the vapor-deposited material 30 m is heated more efficiently by the lower heating mechanism 331.

(Modification example 4)

FIG. 8 is a schematic cross-sectional view according to a modification 4 of the present embodiment.

In the vapor deposition source 30E, a plurality of fins 35 are provided on the container body 311 in the region A.

With such a configuration, the heat indicated by the arrow h3 (FIG. 4) is more efficiently released to the outside of the side wall portion 31w through the plurality of fins 35, so that the top plate 312 and the ejection nozzle 32 are provided with the upper heating mechanism 332. The vapor-deposited material 30 m is heated more efficiently by the lower heating mechanism 331.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications can be made. For example, at least two of the vapor deposition sources 30B, 30C, 30D and 30E can be combined. Each embodiment is not limited to an independent form and can be combined as technically possible as possible.

Further, the term "opposing" in the present specification includes not only the case where a certain member directly faces another member but also the case where a certain member faces another member via a third member. In the latter case, at least a portion of the third member is located between one member and another.

1 ... Vacuum processing device 10 ... Vacuum container 20 ... Substrate support mechanism 30A, 30B, 30C, 30D, 30E ... Evaporation source 30m ... Evaporation material 30s ... Evaporation surface 31 ... Evaporation container 31b ... Bottom 31w ... Side wall 32 ... Ejection nozzle 32c ... Central axis 32w ... Side 35 ... Fins 40 ... Cooling mechanism 50 ... Heat shield plate 60 ... Insulation plate 70 ... Exhaust mechanism 80 ... Control device 90 ... Board 91 ... Board holder 92 ... Mask member 311 ... Container body 312 ... Top plate 312w ... Side 313 ... Locking part 314 ... Surface 315 ... Space 320 ... Spout 331 ... Lower heating mechanism 332 ... Upper heating mechanism 341 ... Lower reflector 342 ... Upper reflector 501 ... Flat plate part 502 ... Bent part 510 ... Hole

Claims (7)

A space having a container body including a bottom portion and a side wall portion connected to the bottom portion and a top plate facing the bottom portion and provided with a ejection nozzle, and surrounded by the container body and the top plate. An evaporative vessel that houses the vaporized material and
The first heating mechanism facing the side wall and
A second heating mechanism that faces the side portions of the top plate and the ejection nozzle and is provided apart from the first heating mechanism in the direction from the bottom portion toward the top plate.
A first reflector facing the first heating mechanism and provided on the opposite side of the side wall portion,
A thin-film deposition source including a second reflector that faces the second heating mechanism and is provided on the opposite side of the side portion and is provided at a distance from the first reflector in the direction. The vapor deposition source according to claim 1.
Further provided with a cooling mechanism surrounding the side wall portion and the side portion,
The first reflector and the first heating mechanism are located between the cooling mechanism and the side wall portion, and the first reflector and the first heating mechanism are located between the cooling mechanism and the side wall portion.
A thin-film deposition source in which the second reflector and the second heating mechanism are located between the cooling mechanism and the side portion. The vapor deposition source according to claim 1 or 2.
Inside the evaporation container, a heat shield is provided between the bottom and the top plate.
The vapor-deposited material is housed in a space surrounded by the container body and the heat shield plate.
A thin-film deposition source in which a part of the heat shield plate is in contact with the side wall portion. The vapor deposition source according to any one of claims 1 to 3.
A vapor deposition source in which the heat emissivity of the surface of the container body facing the space region where the first reflector and the second reflector are separated is higher than the heat emissivity of the surface of the container body other than the surface. The vapor deposition source according to claim 4.
The surface of the container body facing the space region is a vapor deposition source which is a blasting surface. The vapor deposition source according to any one of claims 1 to 5.
The height h of the first heating mechanism from the bottom with respect to the depth d of the container body is two-thirds or less of the depth d. With a vacuum container
A space having a container body including a bottom portion and a side wall portion connected to the bottom portion and a top plate facing the bottom portion and provided with a ejection nozzle, and surrounded by the container body and the top plate. The evaporation container in which the vaporized material is housed, the first heating mechanism facing the side wall, and the first heating mechanism facing the side of the top plate in the direction from the bottom toward the top plate. The second heating mechanism provided apart from each other and the first reflector provided on the opposite side of the side wall portion facing the first heating mechanism and facing the second heating mechanism and opposite to the side portion. A thin-film deposition source having a second reflector provided on the side and separated from the first reflector in the above-mentioned direction.
A vacuum processing apparatus including a substrate holding mechanism facing the vapor deposition source in the vacuum vessel.

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