JP6223675B2 - Vacuum deposition source and vacuum deposition method using the same - Google Patents

Description

The present invention relates to a vacuum deposition method using a vacuum evaporation source and the same. In particular, the present invention relates to a vacuum deposition source having a heater provided on the outer periphery of a crucible and a vacuum deposition method using the same.

In the vacuum thin film forming process, for example, various methods such as vacuum deposition, molecular beam deposition, and ion plating are known as methods for heating and evaporating a vapor deposition material and solidifying it on the surface of the film formation target substrate to form a thin film. ing.
As a method of heating the vapor deposition material in the vacuum vapor deposition source of the vacuum thin film forming process, there are methods such as resistance heating, electron beam heating, and laser beam heating.
In resistance heating, the vapor deposition material accommodated in the crucible is heated by radiation emitted from a heater such as a boat-shaped or wire-shaped filament.

Fig.4 (a) is a schematic block diagram of the vacuum evaporation source which concerns on a prior art example. Here, a vacuum deposition source of a type called a Knudsen cell (K cell) is shown.
The crucible 121 has a flange 121b formed at the opening side end. The crucible 121 is locked by the flange portion 121 b coming into contact with the crucible fixing portion 125. In the crucible 121, the vapor deposition material A is accommodated.
On the outer periphery of the crucible 121, for example, a heater 123 for heating the vapor deposition material A in the crucible 121 by radiation is disposed, and a reflector 124 is provided on the outer periphery thereof.

For example, a vacuum deposition apparatus is configured by arranging a vacuum deposition source having the above-described configuration and a film formation target substrate in a vacuum chamber.
In the vacuum vapor deposition source having the above-described configuration, the radiation emitted from the heater 123 is directly and indirectly reflected by the reflector 124 and irradiated to the vapor deposition material A accommodated in the crucible 121, so that the vapor deposition material A is It evaporates by heating. The vapor of the vapor deposition material A is ejected from the opening of the crucible 121.
The vapor of the vapor deposition material A ejected from the crucible 121 is solidified on the film formation target substrate surface, and a thin film of the vapor deposition material is formed.

  In the vacuum vapor deposition source having the above-described configuration, the crucible 121 is used in order to improve the stability of the film formation rate, the stability of the vapor distribution, and to make the vapor distribution a predetermined shape mainly to improve the flatness of the thin film to be formed. An orifice 121a for reducing the conductance is provided at the opening of the first and second openings. Here, the orifice 121 a is formed integrally with the crucible 121.

  FIG.4 (b) is a schematic block diagram of the vacuum evaporation source which concerns on a prior art example. 4A differs from the vacuum evaporation source in FIG. 4A in that an orifice 121c is provided as a separate member in the opening of the crucible 121.

  In the vacuum evaporation source shown in FIGS. 4A and 4B, when replacing the crucible, the crucible is taken out from the opening side of the crucible, and the new crucible is locked so that the collar portion is in contact with the crucible fixing portion. Use it.

  In the vacuum vapor deposition source having the above-described configuration, the opening side of the crucible 121 is a surface portion exposed to the space in the vacuum chamber due to the structure of the vacuum vapor deposition source, and is relatively compared to the inside of the crucible 121 heated by the heater. The temperature drops.

Since the temperature of the opening of the crucible 121 is relatively lower than that of the inside of the crucible 121 and the conductance of the opening of the crucible 121 is reduced by the orifices (121a, 121c), the opening of the crucible 121 Vapor deposition material is easy to deposit on.
When the vapor deposition material is deposited on the opening of the crucible 121, disadvantages such as fluctuations in film forming speed, fluctuations in vapor distribution, and stoppage of vapor ejection are caused.

  In order to reduce the above disadvantages, in the vacuum vapor deposition source having the above configuration, measures are taken to increase the heater density, for example, on the opening side of the crucible 121.

  In the vacuum thin film forming process, the deposition rate stability, the vapor distribution stability, and the vapor distribution shape, which allow the deposition of the vapor deposition material in the opening of the crucible to be within an allowable range, may vary from process to process. This is particularly important when considering a new process or optimizing an existing process.

In addition, depending on the type of vapor deposition material, there are cases where the characteristics of the material deteriorate when the temperature and time maintained by heating with the heater exceed a certain level.
In order to avoid deterioration of the characteristics of the formed deposited film, it is necessary to replace the crucible containing the deposited material according to the temperature and time continuously maintained in the vacuum deposition source.

As for the deposition of the vapor deposition material, even if the same vacuum vapor deposition source is used, it may differ depending on the type of the vapor deposition material, the film formation speed, and the required film thickness.
On the other hand, the above process parameters are often closely related to the shape of the crucible.

  As described above, in the vacuum thin film formation process, further improvement in film formation stability is required, for example, by suppressing the deposition of the vapor deposition material at the crucible opening and avoiding the deterioration of the characteristics of the vapor deposition film due to heating by the heater. It was.

  The vapor deposition source used for vacuum vapor deposition is described in Patent Documents 1 to 3, for example.

JP 2012-17511 A JP 2011-246786 A JP 2011-60865 A

  The problem to be solved is to further improve the stability of film formation in the vacuum thin film formation process.

  The vacuum evaporation source of the present invention includes a crucible main portion having a first opening having a first opening diameter, and a crucible upper portion having a second opening having a second opening diameter narrowed to the first opening diameter. And a crucible in which the vapor deposition material is accommodated inside, and outside the crucible on the crucible upper side of the portion excluding the second opening so as to irradiate the surface of the vapor deposition material accommodated in the crucible. An upper heater disposed to heat the vapor deposition material; and a reflector disposed outside the upper heater in a portion excluding the second opening to reflect radiation from the upper heater.

The vacuum deposition source of the present invention includes a crucible, an upper heater, and a reflector.
The crucible has a crucible main portion having a first opening portion having a first opening diameter, and a crucible upper portion having a second opening portion having a second opening diameter narrowed to the first opening diameter. Material is contained.
The upper heater is disposed outside the crucible on the upper side of the crucible except for the second opening so as to irradiate the surface of the vapor deposition material accommodated in the crucible and heats the vapor deposition material.
The reflector is disposed outside the upper heater except for the second opening, and reflects the radiation from the upper heater.

  In the above vacuum deposition source of the present invention, preferably, the upper heater heats the deposition material so that a temperature gradient is formed from the surface to the inside of the deposition material.

  In the vacuum vapor deposition source of the present invention, preferably, the crucible main part and the crucible upper part are formed so as to be removable, and fitted into the first opening so as to close the first opening. The upper part of the crucible is provided.

  The vacuum vapor deposition source of the present invention preferably further includes a lower heater that is disposed on a side portion of the crucible main portion and that heats the vapor deposition material under conditions different from those of the upper heater. It extends to the outside of the lower heater, and reflects radiation from the lower heater.

  The vacuum deposition source of the present invention preferably further includes a cooling system that cools a portion excluding the surface of the deposition material accommodated in the crucible.

  The vacuum deposition source of the present invention preferably further includes a crucible base that is detachably provided and on which the crucible is placed.

  In addition, the vacuum vapor deposition method of the present invention includes a crucible main portion having a first opening portion having a first opening diameter and a crucible upper portion having a second opening portion having a second opening diameter narrowed to the first opening diameter. An upper heater is disposed outside the crucible on the crucible upper side of the portion excluding the second opening, and the portion excluding the second opening is included in the crucible having A step of disposing the crucible so that a reflector for reflecting radiation from the upper heater is disposed outside the upper heater; and a step of irradiating the surface of the vapor deposition material accommodated in the crucible by the upper heater. And have.

  The vacuum deposition method of the present invention includes a crucible main portion having a first opening having a first opening diameter, and a crucible upper portion having a second opening having a second opening diameter narrowed to the first opening diameter. A vapor deposition material is accommodated in a crucible having a portion, an upper heater is disposed outside the crucible on the upper side of the crucible excluding the second opening, and the upper heater is disposed outside the upper heater in a portion excluding the second opening. The crucible is arranged so that a reflector that reflects the radiation of the light is arranged. Next, the upper heater irradiates the surface of the vapor deposition material accommodated in the crucible.

  In the vacuum vapor deposition method of the present invention, preferably, in the step of irradiating the surface of the vapor deposition material, the vapor deposition material is formed so that the upper heater forms a temperature gradient from the surface to the inside of the vapor deposition material. Heat.

  In the vacuum deposition method of the present invention, preferably, in the step of disposing the crucible, a lower heater is disposed on a side portion of the crucible main portion, and the reflector extending to the outside of the lower heater is disposed on the lower portion. In the step of arranging the crucible so as to be arranged outside the heater and irradiating the surface of the vapor deposition material with radiation, the vapor deposition material is heated by the lower heater under conditions different from those of the upper heater.

  In the vacuum vapor deposition method of the present invention, preferably, in the step of irradiating the surface of the vapor deposition material, a portion excluding the surface of the vapor deposition material accommodated in the crucible is cooled by a cooling system.

  The vacuum vapor deposition source of the present invention irradiates the surface of the vapor deposition material accommodated in the crucible by the upper heater disposed outside the crucible on the upper side of the crucible except the second opening in the vacuum thin film forming process. By heating the vapor deposition material as described above, the stability of film formation can be further improved.

  The vacuum vapor deposition method of the present invention irradiates the surface of the vapor deposition material accommodated in the crucible by the upper heater disposed outside the crucible on the upper side of the crucible except the second opening in the vacuum thin film forming process. By heating the vapor deposition material as described above, the stability of film formation can be further improved.

FIG. 1 is a schematic configuration diagram of a vacuum deposition apparatus according to an embodiment of the present invention. FIG. 2 is a schematic configuration diagram of a vacuum evaporation source according to the embodiment of the present invention. FIG. 3 is an explanatory diagram of a vacuum evaporation source according to the embodiment of the present invention. 4A and 4B are schematic configuration diagrams of a vacuum deposition source according to a conventional example.

  Embodiments of a vacuum deposition source and a vacuum deposition method using the same according to the present invention will be described below with reference to the drawings.

[Configuration of vacuum evaporation system]
FIG. 1 is a schematic configuration diagram of a vacuum evaporation apparatus according to the present embodiment.
For example, an exhaust pipe 11 and a vacuum pump 12 are connected to the vacuum chamber 10 so that the inside can be reduced to a predetermined pressure. The back pressure in the vacuum chamber 10 during film formation by vacuum deposition is, for example, about 10 ⁻² to 10 ⁻⁵ Pa.

For example, the vacuum evaporation source 20 is disposed inside the vacuum chamber 10. For example, a power source 20 a is connected to the vacuum evaporation source 20.
The vacuum evaporation source 20 has a structure to be described later, and ejects vapor of the vapor deposition material in the direction of arrow V in FIG.

For example, in the vacuum chamber 10, a substrate holder 30 that holds a film formation target substrate in a direction in which vapor of a vapor deposition material of the vacuum evaporation source 20 is ejected is provided.
The substrate holder 30 holds the deposition target substrate so that the surface of the deposition target substrate to be deposited faces the vapor of the vapor deposition material.
Although a dome-shaped substrate holder is shown in the drawing, a substrate holder having another shape may be used, and a transport system for continuously transporting a long substrate may be used.
When the vapor of the vapor deposition material ejected from the vacuum vapor deposition source reaches the surface of the film formation target substrate and solidifies, a thin film of the vapor deposition material is formed on the surface of the film formation target substrate.

[Configuration of vacuum evaporation source]
FIG. 2 is a schematic configuration diagram of a vacuum evaporation source according to the present embodiment. The vacuum deposition source of this embodiment is a type of vacuum deposition source called a Knudsen cell (K cell).
The vacuum evaporation source 20 includes, for example, a crucible 21, a crucible base 22, an upper heater 23 a and a lower heater 23 b, and a reflector 24.
The crucible 21 has a crucible main portion 21b having a first opening 21a having a first opening diameter, and a crucible upper portion 21d having a second opening 21c having a second opening diameter narrowed to the first opening diameter. The vapor deposition material A is accommodated inside.
The second opening 21c is an orifice that reduces the conductance for the purpose of improving the stability of the film formation rate, improving the stability of the vapor distribution, and mainly forming the vapor distribution in a predetermined shape in order to improve the flatness of the thin film to be formed. It becomes.

  The crucible main part 21b and the crucible upper part 21d are formed so as to be removable, and the crucible upper part 21d is provided so as to fit into the first opening part 21a so as to close the first opening part 21a. For this reason, when replenishing or exchanging the vapor deposition material, the vapor deposition material can be easily removed from the crucible main portion 21b having the first opening diameter by removing the crucible upper portion 21d from the crucible main portion 21b, or within the crucible main portion 21b. Can be replenished.

The crucible 21 is made of, for example, sintered BN (sintered boron nitride), PBN (boron nitride formed by thermal decomposition by a CVD (Chemical Vapor Deposition) method), Mo, CIP carbon, or the like.
The material of the crucible 21 is appropriately selected from the following characteristics: cost, life, size of internal tank, workability, reactivity with vacuum deposition material, and compatibility.
Further, in order to realize a preferable temperature gradient from the surface to the inside of the vapor deposition material A, which will be described later, the crucible main portion 21b and the crucible upper portion 21d constitute the crucible, whether or not the crucible surface is coated, and the crucible thickness. The surface condition can be changed.

  For example, the crucible base 22 is a base on which the crucible 21 is placed and is detachably provided.

  For example, the upper heater 23a is disposed outside the crucible 21 on the crucible upper portion 21d side of the portion excluding the second opening 21c so as to irradiate the surface of the vapor deposition material A accommodated in the crucible 21 with the vapor deposition material. Heat.

  For example, you may further have the lower heater 23b arrange | positioned at the side part of the crucible main part 21b, and heating the vapor deposition material A on the conditions different from the upper heater 23a.

  For the upper heater 23a and the lower heater 23b, for example, a resistance heating member made of a halogen lamp or nickel chrome can be used.

  For example, the reflector 24 is disposed outside the upper heater 23a except for the second opening 21c, and reflects radiation from the upper heater 23a.

  In the case of having the lower heater 23b, the reflector 24 may extend to the outside of the lower heater 23b and reflect the radiation from the lower heater 23b.

For example, you may further have a cooling system not shown which cools the part except the surface of the vapor deposition material A accommodated in the crucible 21. FIG.
For example, it is possible to incorporate a cooling system in the crucible base 22.

In the vacuum evaporation source having the above configuration, for example, the vapor deposition material A is heated so that the upper heater 23a forms a temperature gradient from the surface of the vapor deposition material A to the inside.
Furthermore, the temperature gradient from the surface of the vapor deposition material A to the inside can be controlled by appropriately combining the lower heater 23b and the cooling system.

For example, a thermocouple (not shown) is attached to a predetermined position of the crucible 21, and the upper heater, the lower heater, the cooling system, etc. are controlled by feedback from the thermocouple to control the temperature of the vapor deposition material A. Can do. Here, although the power source 20a is connected to the vacuum evaporation source 20 in the above, wiring of a control system for performing feedback from a thermocouple can be appropriately provided in addition to the power source 20a.
Further, the temperature gradient of the vapor deposition material A can be adjusted by the number of the reflectors 24 and the like.

In the vacuum vapor deposition source having the above configuration, the radiation emitted from the upper heater 23a or the upper heater 23a and the lower heater 23b is directly or indirectly reflected by the reflector 24 and accommodated in the crucible 21. The material A is irradiated, and the vapor deposition material A is heated and evaporated by heating. The vapor of the vapor deposition material A is ejected from the second opening 21 c of the crucible 21.
The vapor of the vapor deposition material A ejected from the crucible 21 is solidified on the surface of the film formation target substrate, and a thin film of the vapor deposition material is formed.

  In the vacuum vapor deposition source having the above-described configuration, the conductance of the opening of the crucible 21 is reduced by the second opening 21c serving as an orifice, but the upper heater 23a on the crucible upper part 21d side excluding the second opening 21c. By being disposed outside the crucible 21, the deposition of the vapor deposition material in the second opening 21 c of the crucible 21 can be suppressed. Thereby, it is possible to suppress disadvantages such as fluctuations in film formation speed, fluctuations in vapor distribution, and stop of vapor ejection, and improve film formation stability.

When the vapor deposition material is heated in the vacuum vapor deposition source, it evaporates from the surface of the vapor deposition material and is ejected to the outside through the opening of the crucible. The portion excluding the surface of the vapor deposition material remains in the vapor deposition material without being evaporated even when the vaporization temperature is reached.
Here, when the vapor deposition material is a liquid, convection occurs in the material when heated, so that the temperature in the material becomes uniform.
On the other hand, in the case of sublimation type vapor deposition materials, the temperature inside the material is difficult to be uniform, and when the material is easily decomposed or altered by heating, the surface of the vapor deposition material on the opening side of the crucible is necessary and sufficient for evaporation. It is preferable to heat to such an extent that the portion other than the surface is kept at a temperature that does not decompose or deteriorate. Here, when the vapor deposition material is kept at a temperature at which the vapor deposition material is not decomposed or altered, for example, the temperature is managed by a numerical value obtained by integrating the temperature with time.
According to the vacuum vapor deposition source of the present embodiment, the surface of the vapor deposition material in the crucible is heated to an extent necessary and sufficient for evaporation, and the temperature of the side surface and the bottom surface can be adjusted as necessary, thereby facilitating temperature management. Further, the vapor deposition material can be heated with an ideal temperature distribution without unnecessarily increasing the vapor deposition material.
Thereby, the characteristic deterioration of vapor deposition material can be suppressed and the stability of film-forming can be improved.

As the vapor deposition material used for the vacuum vapor deposition source of the present embodiment, the following materials can be preferably used.
For example, there are ZnSe (zinc selenide), ZnS (zinc sulfide), MgF ₂ (magnesium fluoride), TlI (thallium iodide) and the like as vapor deposition materials that are easily decomposed by heating.
In addition, examples of vapor deposition materials that easily change in quality include organic EL materials, organic fluorine compounds such as perfluoroalkoxysilazane, and organic antifouling film materials such as silicone resins.

FIG. 3 is an explanatory diagram of a vacuum evaporation source according to the embodiment of the present invention.
For example, the crucible base 22 is detachably provided. When exchanging the crucible containing the vapor deposition material, the crucible base 22 is removed, the crucible 21 is taken out from the lower part of the vacuum vapor deposition source, and the crucible containing the new vapor deposition material is taken from the lower part of the vacuum vapor deposition source to the upper heater 23a and the lower part. It is inserted into a position inside the heater 23b. The inserted crucible 23 by the placing on the crucible base 2 2, it is possible to fix the crucible 21.
In the conventional vacuum evaporation source, since the crucible is exchanged from above the vacuum evaporation source, a heater and a reflector cannot be arranged above the crucible.
In the vacuum vapor deposition source of the present embodiment, since the crucible is exchanged from below the vacuum vapor deposition source, a heater or a reflector can be disposed above the crucible. As a result, the surface of the vapor deposition material in the crucible can be heated to a necessary and sufficient level for evaporation.

[Vacuum deposition method]
Next, the vacuum evaporation method according to this embodiment will be described.
First, for example, a crucible main portion 21b having a first opening 21a having a first opening diameter and a crucible upper portion 21d having a second opening 21c having a second opening diameter narrowed to the first opening diameter are included. The vapor deposition material A is accommodated in the crucible 21.
Next, for example, the upper heater 23a is disposed outside the crucible 21 on the crucible upper portion 21d side excluding the second opening, and the radiation from the upper heater 23a is disposed outside the upper heater 23a excluding the second opening. The crucible 21 is disposed so that the reflector 24 that reflects the light is disposed.
Next, for example, the upper heater 23a irradiates the surface of the vapor deposition material A accommodated in the crucible 21 with radiation.

  For example, the crucible 21 may be disposed such that the lower heater 23b is disposed on the side of the crucible main portion 21b and the reflector 24 extending to the outside of the lower heater 23b is disposed on the outside of the lower heater 23b. In this case, in the step of irradiating the surface of the vapor deposition material A, the vapor deposition material A can be heated by the lower heater 23b under conditions different from those of the upper heater 23a.

  In addition, for example, in the step of irradiating the surface of the vapor deposition material, the portion excluding the surface of the vapor deposition material A accommodated in the crucible 21 may be cooled by a cooling system.

In the vacuum vapor deposition source having the above configuration, the radiation emitted from the upper heater 23a or the upper heater 23a and the lower heater 23b is directly or indirectly reflected by the reflector 24 and accommodated in the crucible 21. The material A is irradiated, and the vapor deposition material A is heated and evaporated by heating. The vapor of the vapor deposition material A is ejected from the second opening 21 c of the crucible 21.
The vapor of the vapor deposition material A ejected from the crucible 21 is solidified on the surface of the film formation target substrate, and a thin film of the vapor deposition material is formed.

For example, in the step of irradiating the surface of the vapor deposition material A, it is preferable that the upper heater 23a heats the vapor deposition material so that a temperature gradient is formed from the surface of the vapor deposition material A to the inside.
Furthermore, the temperature gradient from the surface of the vapor deposition material A to the inside can be controlled by appropriately combining the lower heater 23b and the cooling system.

According to the above-described vacuum vapor deposition method, the deposition of the vapor deposition material in the second opening 21c of the crucible 21 can be suppressed, and disadvantages such as film formation speed fluctuation, vapor distribution fluctuation, and stop of vapor ejection are suppressed. The stability of film formation can be improved.
In addition, since the surface of the vapor deposition material in the crucible is heated to an extent necessary and sufficient for evaporation and the temperature of the side surface and the bottom surface can be adjusted as necessary, temperature management becomes easy. Further, the vapor deposition material can be heated with an ideal temperature distribution without unnecessarily increasing the vapor deposition material. For example, a sublimation type vapor deposition material can be preferably applied.
Thereby, the characteristic deterioration of vapor deposition material can be suppressed and the stability of film-forming can be improved.

<Example>
TlI (thallium iodide) was vacuum-deposited by a vacuum evaporation apparatus using the vacuum evaporation source of the above embodiment.
The film formation conditions were as follows: when the upper heater was set at 470 ° C., the thermocouple measurement value of the temperature at the bottom of the crucible corresponding to the portion excluding the surface of the vapor deposition material was 300 ° C., and the film formation rate was 0.05 nm / s was obtained. TlI is easily decomposed by heating, but by using the vacuum evaporation source of the above embodiment, it was possible to perform vacuum evaporation without decomposition.

The present invention is not limited to the above description.
For example, the lower heater is formed only on a part of the side surface of FIG. 2, the crucible main portion 21b, it may be configured to be formed on the entire side surface.
Crucible main unit and the crucible upper may be formed integrally.
For the upper heater and the lower heater, various heating means for heating the vapor deposition material by radiation can be applied in addition to a resistance heating member made of a halogen lamp, nickel chrome, or the like.
As the cooling system, in addition to the configuration built in the crucible base, a cooling pipe or the like may be arranged at a location to be cooled.
In addition, various modifications can be made without departing from the scope of the present invention.

10 ... vacuum chamber 11 ... exhaust pipe 12 ... vacuum pump 20 ... vacuum deposition source 20a ... power supply 21 ... crucible 21a ... first opening 21b ... crucible main unit 21c: second opening 21d: crucible upper part 22: crucible base 23a ... upper heater 23b ... lower heater 24 ... reflector 30 ... substrate holder 121 ... crucible 121a, 121c ... Orifice 121b ... Collar part 123 ... Heater 124 ... Reflector 125 ... Crucible fixing part A ... Vapor deposition material

Claims (9)

A crucible main portion having a first opening portion having a first opening diameter, and a second opening portion having a second opening diameter narrowed to the first opening diameter for ejecting vapor of the vapor deposition material to the uppermost central portion. A crucible having an upper portion of the crucible and containing the vapor deposition material therein,
The surface of the vapor deposition material accommodated in the crucible is irradiated with radiation from the upper side of the surface excluding the side and bottom sides of the vapor deposition material. An upper heater that is disposed along the outer side of the crucible on the upper side of the crucible and that gradually increases from the upper end to the second opening, and heats the surface of the vapor deposition material;
A reflector that is disposed outside the upper heater in a portion other than the second opening and reflects radiation from the upper heater to an outer portion of the crucible on the upper side of the crucible,
The surface of the vapor deposition material is heated to a temperature necessary and sufficient for evaporation so that the upper heater forms a temperature gradient from the surface of the vapor deposition material to the inside, and the portion other than the surface is kept at a temperature that does not decompose or change. Deposition source. The crucible main part and the crucible upper part are formed so as to be removable, and the crucible upper part is provided by fitting into the first opening so as to close the first opening. Vacuum deposition source. In order to achieve a temperature gradient from the surface of the vapor deposition material to the inside, the crucible has at least a material constituting the crucible at the crucible main part and the crucible upper part, whether or not the crucible surface is coated, and the crucible thickness. The vacuum deposition source according to claim 1, wherein at least one of the surface states is changed. The vacuum evaporation source according to any one of claims 1 to 3, further comprising a cooling system that cools a portion excluding a surface of the evaporation material accommodated in the crucible. A crucible base that is detachably provided and on which the crucible is placed;
The vacuum evaporation source according to claim 4 , wherein the cooling system is built in the crucible base. A crucible base that is detachably provided and on which the crucible is placed;
The vacuum evaporation source according to any one of claims 1 to 4 , wherein the crucible can be inserted and removed from a lower side of the vacuum evaporation source in a state where the crucible base is removed. A crucible main portion having a first opening portion having a first opening diameter, and a second opening portion having a second opening diameter narrowed to the first opening diameter for ejecting vapor of the vapor deposition material to the uppermost central portion. Containing a vapor deposition material inside a crucible having a crucible upper portion;
An upper heater is disposed along the outer side of the crucible on the upper side of the crucible that is gradually increased from the upper end of the crucible main portion to the second opening except for the second opening, Disposing the crucible so that a reflector for reflecting radiation from the upper heater to the outer portion of the crucible on the crucible upper side is disposed outside the upper heater in a portion excluding the second opening;
Irradiating the surface of the vapor deposition material accommodated in the crucible by the upper heater with radiation from the upper side of the surface excluding the side and the bottom of the vapor deposition material,
In the step of irradiating the radiation on the surface of the deposition material, the so temperature gradient from the surface to the inside of the deposition material is formed, requires heating to a temperature sufficient surface of the deposition material evaporated by the upper heater The part other than the surface is kept at a temperature that does not decompose or deteriorate. In order to realize a temperature gradient from the surface of the vapor deposition material to the inside of the crucible, at least the material constituting the crucible, the presence or absence of coding of the crucible surface, the thickness of the crucible at the crucible main part and the crucible upper part The vacuum deposition method according to claim 7, wherein at least one of the surface states is changed. Wherein in the step of irradiating the radiation on the surface of the deposition material, a vacuum deposition method according to claim 7 or 8 for cooling the portion except for the surface of the evaporation material contained in the crucible by cooling system.

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