KR20210050871A - 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 - Google Patents

실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 Download PDF

Info

Publication number
KR20210050871A
KR20210050871A KR1020190135402A KR20190135402A KR20210050871A KR 20210050871 A KR20210050871 A KR 20210050871A KR 1020190135402 A KR1020190135402 A KR 1020190135402A KR 20190135402 A KR20190135402 A KR 20190135402A KR 20210050871 A KR20210050871 A KR 20210050871A
Authority
KR
South Korea
Prior art keywords
silicon nitride
formula
etching solution
nitride film
silicon
Prior art date
Application number
KR1020190135402A
Other languages
English (en)
Korean (ko)
Other versions
KR102675057B1 (ko
Inventor
유호성
김명현
양준호
이준은
장평화
Original Assignee
오씨아이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오씨아이 주식회사 filed Critical 오씨아이 주식회사
Priority to KR1020190135402A priority Critical patent/KR102675057B1/ko
Priority to CN202010974700.6A priority patent/CN112745853B/zh
Priority to JP2020156587A priority patent/JP2021072436A/ja
Publication of KR20210050871A publication Critical patent/KR20210050871A/ko
Application granted granted Critical
Publication of KR102675057B1 publication Critical patent/KR102675057B1/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020190135402A 2019-10-29 2019-10-29 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 KR102675057B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020190135402A KR102675057B1 (ko) 2019-10-29 2019-10-29 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
CN202010974700.6A CN112745853B (zh) 2019-10-29 2020-09-16 氮化硅膜蚀刻溶液及使用其的半导体器件的制备方法
JP2020156587A JP2021072436A (ja) 2019-10-29 2020-09-17 シリコン窒化膜エッチング溶液、及びこれを用いた半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190135402A KR102675057B1 (ko) 2019-10-29 2019-10-29 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법

Publications (2)

Publication Number Publication Date
KR20210050871A true KR20210050871A (ko) 2021-05-10
KR102675057B1 KR102675057B1 (ko) 2024-06-12

Family

ID=75645727

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190135402A KR102675057B1 (ko) 2019-10-29 2019-10-29 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법

Country Status (3)

Country Link
JP (1) JP2021072436A (zh)
KR (1) KR102675057B1 (zh)
CN (1) CN112745853B (zh)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037086A (ja) * 2001-07-24 2003-02-07 Sumitomo Chem Co Ltd 金属研磨組成物及び研磨方法
JP2012099550A (ja) * 2010-10-29 2012-05-24 Sanyo Chem Ind Ltd 窒化ケイ素用エッチング液
KR20150058238A (ko) * 2012-09-21 2015-05-28 다우 코닝 도레이 캄파니 리미티드 고도 굴절성 표면 처리제, 및 이를 이용하여 표면-처리된 미세 부재 및 광학 재료
KR20170126049A (ko) * 2016-05-04 2017-11-16 오씨아이 주식회사 실리콘 질화막 식각 용액
KR20170130665A (ko) * 2016-05-18 2017-11-29 오씨아이 주식회사 실리콘 기판의 전처리제 및 이를 이용한 실리콘 기판의 식각 방법
KR20180048689A (ko) * 2015-08-31 2018-05-10 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 반도체 구조를 에칭하기 위한 질소-함유 화합물
KR20190098030A (ko) * 2018-02-13 2019-08-21 동우 화인켐 주식회사 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106928859A (zh) * 2015-12-31 2017-07-07 安集微电子科技(上海)有限公司 一种化学机械抛光液及其应用
KR101828437B1 (ko) * 2017-04-06 2018-03-29 주식회사 디엔에스 실리콘 질화막 식각용 조성물.
JP7026782B2 (ja) * 2017-09-06 2022-02-28 インテグリス・インコーポレーテッド 窒化ケイ素含有基板をエッチングするための組成物および方法
KR102653096B1 (ko) * 2018-02-13 2024-04-01 동우 화인켐 주식회사 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037086A (ja) * 2001-07-24 2003-02-07 Sumitomo Chem Co Ltd 金属研磨組成物及び研磨方法
JP2012099550A (ja) * 2010-10-29 2012-05-24 Sanyo Chem Ind Ltd 窒化ケイ素用エッチング液
KR20150058238A (ko) * 2012-09-21 2015-05-28 다우 코닝 도레이 캄파니 리미티드 고도 굴절성 표면 처리제, 및 이를 이용하여 표면-처리된 미세 부재 및 광학 재료
KR20180048689A (ko) * 2015-08-31 2018-05-10 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 반도체 구조를 에칭하기 위한 질소-함유 화합물
KR20170126049A (ko) * 2016-05-04 2017-11-16 오씨아이 주식회사 실리콘 질화막 식각 용액
KR20170130665A (ko) * 2016-05-18 2017-11-29 오씨아이 주식회사 실리콘 기판의 전처리제 및 이를 이용한 실리콘 기판의 식각 방법
KR20190098030A (ko) * 2018-02-13 2019-08-21 동우 화인켐 주식회사 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MACROMOLECULES 1992 25 1 96-101 *

Also Published As

Publication number Publication date
CN112745853A (zh) 2021-05-04
CN112745853B (zh) 2024-03-26
JP2021072436A (ja) 2021-05-06
KR102675057B1 (ko) 2024-06-12

Similar Documents

Publication Publication Date Title
KR101320416B1 (ko) 식각액 조성물 및 이를 이용한 습식 식각방법
KR102079041B1 (ko) 실리콘 기판 식각 용액
KR20200000640A (ko) 실리콘 질화막 식각 조성물
CN112779014B (zh) 氮化硅膜蚀刻溶液及使用其的半导体器件的制备方法
KR102345211B1 (ko) 실리콘 질화막 식각 조성물 및 이를 이용한 방법
KR102464161B1 (ko) 실리콘 질화막 식각 조성물
KR102675057B1 (ko) 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
KR20190142077A (ko) 폴리실록산계 화합물 및 이를 포함하는 실리콘 질화막 식각 조성물
KR102675055B1 (ko) 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
JP2021015967A (ja) シリコン窒化膜エッチング溶液、及びこれを用いた半導体素子の製造方法
KR102675052B1 (ko) 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
KR20210062347A (ko) 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
KR20190142010A (ko) 폴리실록산계 화합물을 포함하는 조성물 및 이를 포함하는 식각 조성물
KR102675053B1 (ko) 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
JP7489242B2 (ja) シリコン窒化膜エッチング溶液、及びこれを用いた半導体素子の製造方法
JP2021015969A (ja) シリコン窒化膜エッチング溶液、及びこれを用いた半導体素子の製造方法
KR102584616B1 (ko) 실리콘 기판 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
KR20210068927A (ko) 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
KR20200137502A (ko) 실리콘 기판 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
KR20210007540A (ko) 실리콘 질화막 식각 용액 및 이의 제조방법
JP2020004965A (ja) シリコン基板エッチング溶液

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant