KR20200129037A - 감방사선성 조성물, 표시 장치용 절연막, 표시 장치, 표시 장치용 절연막의 형성 방법 및, 실세스퀴옥산 - Google Patents

감방사선성 조성물, 표시 장치용 절연막, 표시 장치, 표시 장치용 절연막의 형성 방법 및, 실세스퀴옥산 Download PDF

Info

Publication number
KR20200129037A
KR20200129037A KR1020200049882A KR20200049882A KR20200129037A KR 20200129037 A KR20200129037 A KR 20200129037A KR 1020200049882 A KR1020200049882 A KR 1020200049882A KR 20200049882 A KR20200049882 A KR 20200049882A KR 20200129037 A KR20200129037 A KR 20200129037A
Authority
KR
South Korea
Prior art keywords
radiation
group
sensitive composition
silsesquioxane
display device
Prior art date
Application number
KR1020200049882A
Other languages
English (en)
Korean (ko)
Inventor
토시유키 아키이케
타이치 다자키
요시히사 오쿠무라
윤창식
Original Assignee
제이에스알 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제이에스알 가부시끼가이샤 filed Critical 제이에스알 가부시끼가이샤
Publication of KR20200129037A publication Critical patent/KR20200129037A/ko

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0755Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/22Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/28Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen sulfur-containing groups
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • H01L27/323
    • H01L51/50
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40OLEDs integrated with touch screens

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Silicon Polymers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020200049882A 2019-05-07 2020-04-24 감방사선성 조성물, 표시 장치용 절연막, 표시 장치, 표시 장치용 절연막의 형성 방법 및, 실세스퀴옥산 KR20200129037A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019087746A JP7247736B2 (ja) 2019-05-07 2019-05-07 感放射線性組成物、表示装置用絶縁膜、表示装置、表示装置用絶縁膜の形成方法、及びシルセスキオキサン
JPJP-P-2019-087746 2019-05-07

Publications (1)

Publication Number Publication Date
KR20200129037A true KR20200129037A (ko) 2020-11-17

Family

ID=73044438

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200049882A KR20200129037A (ko) 2019-05-07 2020-04-24 감방사선성 조성물, 표시 장치용 절연막, 표시 장치, 표시 장치용 절연막의 형성 방법 및, 실세스퀴옥산

Country Status (3)

Country Link
JP (1) JP7247736B2 (ja)
KR (1) KR20200129037A (ja)
CN (1) CN111913356A (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023276864A1 (ja) * 2021-06-29 2023-01-05 東洋紡株式会社 シルセスキオキサン化合物及びその製造方法
WO2023074804A1 (ja) 2021-10-29 2023-05-04 ダウ・東レ株式会社 アルカリ可溶性の紫外線硬化性オルガノポリシロキサン、それを含む紫外線硬化性組成物およびその用途
WO2023218889A1 (ja) * 2022-05-13 2023-11-16 Agc株式会社 組成物、化合物、表面処理剤、物品、及び物品の製造方法
WO2024063066A1 (ja) * 2022-09-22 2024-03-28 ダウ・東レ株式会社 硬化性分岐状オルガノポリシロキサン、それを含む高エネルギー線硬化性組成物およびその用途
WO2024063067A1 (ja) * 2022-09-22 2024-03-28 ダウ・東レ株式会社 硬化性分岐状オルガノポリシロキサン、それを含む高エネルギー線硬化性組成物およびその用途

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015161806A (ja) 2014-02-27 2015-09-07 大日本印刷株式会社 タッチパネル付立体視有機エレクトロルミネッセンス表示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2981567B2 (ja) * 1990-06-12 1999-11-22 関西ペイント株式会社 腐食防止性樹脂
JPH06145510A (ja) * 1992-11-11 1994-05-24 Showa Denko Kk ポリアミド樹脂組成物
JP5729329B2 (ja) * 2011-03-31 2015-06-03 Jsr株式会社 感放射線性組成物、並びに硬化膜及びその形成方法
JP5866897B2 (ja) * 2011-09-08 2016-02-24 Jsr株式会社 液晶配向剤、液晶配向膜、液晶表示素子及び液晶表示素子の製造方法
JP6083557B2 (ja) * 2012-12-13 2017-02-22 ナガセケムテックス株式会社 シルセスキオキサン誘導体、それを用いたネガ型感光性樹脂組成物
TWI489212B (zh) * 2013-03-29 2015-06-21 Chi Mei Corp Photosensitive resin composition and its application
JP6853057B2 (ja) * 2017-01-31 2021-03-31 東京応化工業株式会社 重合性組成物、硬化膜の製造方法、及び硬化膜
US10234763B2 (en) * 2017-05-11 2019-03-19 Eastman Kodak Company Method of providing photopatterned functional surfaces
CN107570124A (zh) * 2017-09-07 2018-01-12 华南师范大学 用于制备双酚a印迹介孔材料的功能单体及其制备方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015161806A (ja) 2014-02-27 2015-09-07 大日本印刷株式会社 タッチパネル付立体視有機エレクトロルミネッセンス表示装置

Also Published As

Publication number Publication date
JP7247736B2 (ja) 2023-03-29
CN111913356A (zh) 2020-11-10
JP2020184010A (ja) 2020-11-12

Similar Documents

Publication Publication Date Title
KR20200129037A (ko) 감방사선성 조성물, 표시 장치용 절연막, 표시 장치, 표시 장치용 절연막의 형성 방법 및, 실세스퀴옥산
EP2799928B1 (en) Photosensitive resin composition and process for producing semiconductor element
KR101269299B1 (ko) 네거티브형 감광성 조성물, 그것을 사용한 광학 소자용 격벽 및 그 격벽을 갖는 광학 소자
JP6064570B2 (ja) 表示素子用感放射線性樹脂組成物、硬化膜、硬化膜の製造方法、半導体素子および表示素子
EP3061792A1 (en) Silicon-containing heat- or photo-curable composition
JP5072101B2 (ja) Mems用感光性樹脂組成物及びその硬化物
US10067421B2 (en) Negative photosensitive resin composition, cured resin film, partition walls and optical element
KR101589165B1 (ko) 실란계 조성물 및 그 경화막, 및 그것을 이용한 네거티브형 레지스트 패턴의 형성 방법
TW201232184A (en) Negative-type photosensitive resin composition, partition wall for use in optical elements and manufacturing method thereof, manufacturing method of an optical element having said partition walls, and ink-repellent agent solution
KR101799361B1 (ko) 감광성 수지 조성물
KR101992594B1 (ko) 네거티브형 감광성 실록산 조성물
TWI546338B (zh) A photohardenable resin composition and a novel siloxane compound
US10156787B2 (en) Composition for forming interlayer insulating film, interlayer insulating film, method for forming interlayer insulating film pattern, and device
TW201243500A (en) Negative photosensitive resin composition and coating film
TWI767982B (zh) 聚合性組合物、硬化膜之製造方法、及硬化膜
US20230037301A1 (en) Negative photosensitive resin composition, pattern structure and method for producing patterned cured film
US10168617B2 (en) Composition for forming interlayer insulating film, interlayer insulating film, method for forming interlayer insulating film pattern, and device
JP7472665B2 (ja) 感放射線性組成物、表示装置用絶縁膜、表示装置、表示装置用絶縁膜の形成方法、及び重合体
JP2022161019A (ja) ネガ型感放射線性樹脂組成物、有機el素子用絶縁膜とその形成方法及び有機el装置
JP7484710B2 (ja) ポジ型感光性樹脂組成物、その硬化膜およびそれを具備する光学デバイス
KR102671237B1 (ko) 네가티브형 감광성 수지 조성물
CN118103773A (zh) 高折射率光刻胶组合物
KR20140049717A (ko) 유기실록산 중합체를 포함하는 네거티브형 감광성 수지 조성물 및 이로부터 제조된 경화막