KR20200032041A - 온도제어 장치 - Google Patents
온도제어 장치 Download PDFInfo
- Publication number
- KR20200032041A KR20200032041A KR1020197037261A KR20197037261A KR20200032041A KR 20200032041 A KR20200032041 A KR 20200032041A KR 1020197037261 A KR1020197037261 A KR 1020197037261A KR 20197037261 A KR20197037261 A KR 20197037261A KR 20200032041 A KR20200032041 A KR 20200032041A
- Authority
- KR
- South Korea
- Prior art keywords
- valve
- fluid
- temperature
- way valve
- temperature control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012530 fluid Substances 0.000 claims abstract description 394
- 238000010992 reflux Methods 0.000 claims abstract description 31
- 238000002156 mixing Methods 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 26
- 238000001816 cooling Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 16
- 238000003860 storage Methods 0.000 claims description 12
- 238000005520 cutting process Methods 0.000 claims description 10
- 230000009471 action Effects 0.000 claims description 3
- 239000012267 brine Substances 0.000 description 30
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 30
- 230000001276 controlling effect Effects 0.000 description 29
- 238000007789 sealing Methods 0.000 description 23
- 238000005530 etching Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 18
- 238000009826 distribution Methods 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 238000012545 processing Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 230000008878 coupling Effects 0.000 description 12
- 238000010168 coupling process Methods 0.000 description 12
- 238000005859 coupling reaction Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 230000007423 decrease Effects 0.000 description 10
- 238000003780 insertion Methods 0.000 description 9
- 230000037431 insertion Effects 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000010792 warming Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 4
- 229920006351 engineering plastic Polymers 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 2
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920002943 EPDM rubber Polymers 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B29/00—Combined heating and refrigeration systems, e.g. operating alternately or simultaneously
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B21/00—Machines, plants or systems, using electric or magnetic effects
- F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
- F25B21/04—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect reversible
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K11/00—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B25/00—Machines, plants or systems, using a combination of modes of operation covered by two or more of the groups F25B1/00 - F25B23/00
- F25B25/005—Machines, plants or systems, using a combination of modes of operation covered by two or more of the groups F25B1/00 - F25B23/00 using primary and secondary systems
-
- F25B41/003—
-
- F25B41/04—
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B41/00—Fluid-circulation arrangements
- F25B41/20—Disposition of valves, e.g. of on-off valves or flow control valves
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B41/00—Fluid-circulation arrangements
- F25B41/40—Fluid line arrangements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B49/00—Arrangement or mounting of control or safety devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D17/00—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces
- F25D17/02—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating liquids, e.g. brine
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B2339/00—Details of evaporators; Details of condensers
- F25B2339/04—Details of condensers
- F25B2339/047—Water-cooled condensers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Control Of Temperature (AREA)
- Non-Volatile Memory (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
도 2는 플라스마 처리 장치를 나타내는 절단면 구성도이다.
도 3은 칠러 장치의 제어 온도를 나타내는 그래프이다.
도 4는 본 발명의 실시형태 1에 따른 온도제어 장치로서의 항온 유지 장치(칠러 장치)의 동작을 나타내는 개략 구성도이다.
도 5는 본 발명의 실시형태 1에 따른 온도제어 장치로서의 항온 유지 장치(칠러 장치)의 동작을 나타내는 개략 구성도이다.
도 6은 3차원 NAND형 플래시 메모리를 나타내는 개략 구성도이다.
도 7은 반도체 웨이퍼의 에칭 공정을 나타내는 모식도이다.
도 8은 본 발명의 실시형태 1에 따른 온도제어 장치로서의 항온 유지 장치(칠러 장치)를 나타내는 배관 구성도이다.
도 9는 본 발명의 실시형태 1에 따른 유량제어용 삼방 밸브의 일례로서의 삼방 밸브형 모터 밸브를 나타내는 외관 사시도이다.
도 10(a)~(d)는 본 발명의 실시형태 1에 따른 유량제어용 삼방 밸브의 일례로서의 삼방 밸브형 모터 밸브를 나타내는 각각 정면도, 동(同) 우측면도, 엑추에이터부의 저면도 및 주요부 좌측면도이다.
도 11은 본 발명의 실시형태 1에 따른 유량제어용 삼방 밸브의 일례로서의 삼방 밸브형 모터 밸브를 나타내는 도 10(a)의 A-A선 단면도이다.
도 12는 본 발명의 실시형태 1에 따른 유량제어용 삼방 밸브의 일례로서의 삼방 밸브형 모터 밸브를 나타내는 도 10(b)의 B-B선 단면도이다.
도 13은 밸브 본체의 세로 단면도이다.
도 14는 밸브 본체를 나타내는 절단면 구성도이다.
도 15는 본 발명의 실시형태 1에 따른 유량제어용 삼방 밸브의 일례로서의 삼방 밸브형 모터 밸브를 나타내는 주요부의 절단면 사시도이다.
도 16은 본 발명의 실시형태 1에 따른 유량제어용 삼방 밸브의 일례로서의 삼방 밸브형 모터 밸브를 나타내는 주요부의 분해 사시도이다.
도 17은 밸브시트를 나타내는 구성도이다.
도 18은 밸브시트와 밸브축의 관계를 나타내는 구성도이다.
도 19는 웨이브 와셔(wave washer)를 나타내는 구성도이다.
도 20은 조정 링을 나타내는 사시 구성도이다.
도 21은 밸브축의 동작을 나타내는 구성도이다.
도 22는 밸브축을 나타내는 구성도이다.
도 23은 밸브축을 나타내는 구성도이다.
도 24는 밸브축을 나타내는 구성도이다.
도 25는 본 발명의 실시형태 1에 따른 유량제어용 삼방 밸브의 일례로서의 삼방 밸브형 모터 밸브의 동작을 나타내는 절단면 구성도이다.
도 26은 본 발명의 실시형태 1에 따른 유량제어용 삼방 밸브의 일례로서의 삼방 밸브형 모터 밸브의 동작 특성을 나타내는 그래프이다.
도 27은 본 발명의 실시형태 1에 따른 온도제어 장치로서의 항온 유지 장치(칠러 장치)의 동작을 나타내는 배관 구성도이다.
101: 저온 측 유체공급부
102: 고온 측 유체공급부
103: 제1 유량제어용 삼방 밸브
105: 온도조절 대상 장치
108: 제2 유량제어용 삼방 밸브
112: 제3 유량제어용 삼방 밸브
116: 제4 유량제어용 삼방 밸브
Claims (6)
- 저온 측의 미리 정해진 제1 온도로 조정된 저온 측 유체를 공급하는 제1 공급 수단과,
고온 측의 미리 정해진 제2 온도로 조정된 고온 측 유체를 공급하는 제2 공급 수단과,
상기 제1 공급 수단으로부터 공급되는 상기 저온 측 유체와 상기 제2 공급 수단으로부터 공급되는 상기 고온 측 유체의 유량을 제어하면서 혼합하고 온도제어용 유체로서 온도제어 대상에 공급하는 제1 유량제어용 삼방 밸브와,
상기 온도제어 대상을 유통한 상기 온도제어용 유체를 상기 제1 공급 수단과 상기 제2 공급 수단에 유량을 제어하면서 분배하는 제2 유량제어용 삼방 밸브와,
상기 온도제어 대상을 유통하여 상기 제2 유량제어용 삼방 밸브에 의해 상기 제1 공급 수단에 분배되는 상기 온도제어용 유체와 상기 제1 공급 수단으로부터 상기 제1 유량제어용 삼방 밸브에 공급되지 않고 상기 제1 공급 수단에 환류하는 상기 저온 측 유체의 유량을 제어하는 제3 유량제어용 삼방 밸브와,
상기 온도제어 대상을 유통하여 상기 제2 유량제어용 삼방 밸브에 의해 상기 제2 공급 수단에 분배되는 상기 온도제어용 유체와 상기 제2 공급 수단으로부터 상기 제1 유량제어용 삼방 밸브에 공급되지 않고 상기 제2 공급 수단에 환류하는 고온 측 유체의 유량을 제어하는 제4 유량제어용 삼방 밸브를 구비하는, 온도제어 장치. - 제1항에 있어서,
상기 제1 공급 수단은,
상기 제1 공급 수단에 환류하는 상기 온도제어용 유체를 냉각하는 제1 냉각 수단과,
상기 제1 냉각 수단에 의해 냉각된 상기 온도제어용 유체를 보조적으로 가열하여 상기 저온 측 유체로서 공급하는 제1 가열 수단과,
상기 제1 가열 수단에 의해 보조 가열된 상기 저온 측 유체를 저장하는 제1 저장 탱크를 구비하는, 온도제어 장치. - 제1항 또는 제2항에 있어서,
상기 제2 공급 수단은,
상기 제2 공급 수단에 환류하는 상기 온도제어용 유체를 냉각하는 제2 냉각 수단과,
상기 제2 냉각 수단에 의해 냉각된 상기 온도제어용 유체를 보조적으로 가열하여 상기 고온 측 유체로서 공급하는 제2 가열 수단과,
상기 제2 가열 수단에 의해 보조 가열된 상기 고온 측 유체를 저장하는 제2 저장 탱크를 구비하는, 온도제어 장치. - 제1항 또는 제2항에 있어서,
상기 제3 및 제4 유량제어용 삼방 밸브는 상기 제1 유량제어용 삼방 밸브의 혼합비에 따라 상기 제1 및 제2 공급 수단으로부터 상기 제1 및 제2 공급 수단으로 귀환시키는 상기 저온 측 유체 및 상기 고온 측 유체의 비율을 증가시키는 것을 특징으로 하는, 온도제어 장치. - 제1항 또는 제2항에 있어서,
상기 제1 내지 제4 유량제어용 삼방 밸브는,
상기 온도제어용 유로를 유통한 온도제어용 유체가 유입되는 유입구와 상기 온도제어용 유체 중 상기 제1 공급 수단에 분배하는 상기 온도제어용 유체가 유출되고 절단면이 직사각형상인 제1 밸브포트와 상기 온도제어용 유체 중 상기 제2 공급 수단에 분배하는 상기 온도제어용 유체가 유출되고 절단면이 직사각형상인 제2 밸브포트가 형성된 원기둥 형상의 빈 공간으로 이루어지는 밸브시트(valve seat)를 가지는 밸브 본체와,
상기 제1 밸브포트를 닫힘 상태로부터 열림 상태로 전환함과 동시에 상기 제2 밸브포트를 열림 상태로부터 닫힘 상태로 전환하도록 상기 밸브 본체의 밸브시트 내에 회전이 자유롭게 배치되고, 미리 정해진 중심각을 가지는 반원통 형상으로 형성되면서 둘레방향을 따른 양 단면(端面)이 곡면 형상 또는 평면 형상으로 형성된 밸브몸체(valve body)와,
상기 밸브몸체를 회전 구동하는 구동 수단을 가지는 것을 특징으로 하는, 온도제어 장치. - 제1항 또는 제2항에 있어서,
상기 제1 내지 제4 유량제어용 삼방 밸브는,
유체가 유출되고 절단면이 직사각형상인 제1 밸브포트와 상기 유체가 유출되고 절단면이 직사각형상인 제2 밸브포트가 형성된 원기둥 형상의 빈 공간으로 이루어지는 밸브시트를 가지는 밸브 본체와,
상기 밸브 본체에 장착되어 상기 제1 및 제2 밸브포트를 각각 형성하는 제1 및 제2 밸브포트 형성 부재와,
상기 밸브 본체의 밸브시트 내에 회전이 자유롭게 배치되고, 상기 제1 밸브포트를 닫힘 상태로부터 열림 상태로 전환함과 동시에 상기 제2 밸브포트를 열림 상태로부터 닫힘 상태로 전환하는 개구부가 형성된 원통 형상의 밸브몸체와,
상기 밸브몸체와 상기 밸브시트의 간극으로부터 누설된 상기 유체의 압력을 상기 제1 및 제2 밸브포트 형성 부재에 작용시키고, 상기 밸브몸체가 상기 제1 및 제2 밸브포트를 개폐할 때에 상기 밸브몸체의 위치가 변동되는 것을 억제하는 압력 작용부와,
상기 밸브몸체를 회전 구동하는 구동 수단을 가지는 것을 특징으로 하는, 온도제어 장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017143038A JP6990058B2 (ja) | 2017-07-24 | 2017-07-24 | 温度制御装置 |
JPJP-P-2017-143038 | 2017-07-24 | ||
PCT/JP2018/027330 WO2019021968A1 (ja) | 2017-07-24 | 2018-07-20 | 温度制御装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20200032041A true KR20200032041A (ko) | 2020-03-25 |
KR102522388B1 KR102522388B1 (ko) | 2023-04-17 |
Family
ID=65040901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020197037261A Active KR102522388B1 (ko) | 2017-07-24 | 2018-07-20 | 온도제어 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11073309B2 (ko) |
JP (1) | JP6990058B2 (ko) |
KR (1) | KR102522388B1 (ko) |
CN (1) | CN110959187B (ko) |
TW (1) | TWI758515B (ko) |
WO (1) | WO2019021968A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102685931B1 (ko) * | 2023-03-02 | 2024-07-17 | 한종원 | 냉온 절환 시스템 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6947532B2 (ja) * | 2017-05-02 | 2021-10-13 | 伸和コントロールズ株式会社 | 流量制御弁及びこれを用いた温度制御装置 |
JP6990058B2 (ja) * | 2017-07-24 | 2022-01-12 | 伸和コントロールズ株式会社 | 温度制御装置 |
CN208605661U (zh) * | 2018-05-14 | 2019-03-15 | 讯凯国际股份有限公司 | 控制阀 |
JP6624623B1 (ja) * | 2019-06-26 | 2019-12-25 | 伸和コントロールズ株式会社 | 温度制御装置及び温調装置 |
JP7437898B2 (ja) * | 2019-09-18 | 2024-02-26 | 東京エレクトロン株式会社 | 検査システム及び検査方法 |
JP7281387B2 (ja) | 2019-11-08 | 2023-05-25 | Ckd株式会社 | 温度制御システム、及び統合温度制御システム |
JP7353923B2 (ja) | 2019-11-08 | 2023-10-02 | Ckd株式会社 | 温度制御システム、及び統合温度制御システム |
JP7339135B2 (ja) * | 2019-11-20 | 2023-09-05 | Ckd株式会社 | 温度制御システム |
JP7277400B2 (ja) * | 2020-02-19 | 2023-05-18 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
IT202000005335A1 (it) * | 2020-03-12 | 2021-09-12 | Stulz S P A | Modulo di raffreddamento gratuito per sistema di gestione della temperatura |
JP7541841B2 (ja) * | 2020-03-18 | 2024-08-29 | 株式会社Kelk | 温度制御システム |
US11193698B1 (en) * | 2020-05-13 | 2021-12-07 | Quattro Dynamics Company Limited | Waste heat re-cycle cooling system |
JP7402520B2 (ja) * | 2020-10-30 | 2023-12-21 | 伸和コントロールズ株式会社 | 温調流体循環装置及び温調流体循環システム |
WO2023063391A1 (ja) | 2021-10-15 | 2023-04-20 | 東京エレクトロン株式会社 | 温度制御装置、基板処理装置および液量制御方法 |
JP2024006017A (ja) * | 2022-06-30 | 2024-01-17 | 伸和コントロールズ株式会社 | 温度制御装置及び検査装置 |
JP7547525B1 (ja) * | 2023-03-03 | 2024-09-09 | 株式会社荏原製作所 | 半導体製造プロセスのための冷却システム、および半導体製造システム |
JP2024159008A (ja) * | 2023-04-28 | 2024-11-08 | 株式会社デンソー | 流体回路システム |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06174388A (ja) * | 1992-12-03 | 1994-06-24 | Daikin Ind Ltd | 2チャンネル液体冷却装置 |
JP2014063972A (ja) * | 2012-08-29 | 2014-04-10 | Tokyo Electron Ltd | プラズマエッチング装置及び制御方法 |
JP2015079930A (ja) | 2013-10-17 | 2015-04-23 | テキスト カンパニー リミテッド | 半導体製造設備のための温度制御システム |
JP2017063088A (ja) * | 2015-09-24 | 2017-03-30 | 東京エレクトロン株式会社 | 温度調整装置及び基板処理装置 |
JP2018031453A (ja) * | 2016-08-26 | 2018-03-01 | 伸和コントロールズ株式会社 | 流量制御用三方弁及びこれを用いた温度制御装置 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1778068B2 (de) * | 1968-03-25 | 1976-05-06 | Konus-Kessel Gesellschaft für Wärmetechnik mbH & Co KG, 6832 Hockenheim | Vorrichtung zum aufeinanderfolgenden heizen und kuehlen einer bearbeitungseinrichtung |
US3776506A (en) * | 1971-12-15 | 1973-12-04 | Acf Ind Inc | Valve structure having fluid pressure actuated sealing members |
US3749357A (en) * | 1972-04-07 | 1973-07-31 | Acf Ind Inc | Valve structure having fluid pressure actuated seats |
US3848849A (en) * | 1973-06-29 | 1974-11-19 | Vapor Corp | Fluid control valve |
JPH07190217A (ja) * | 1993-12-28 | 1995-07-28 | Kougakushiya:Kk | 切換弁装置 |
JP3552438B2 (ja) * | 1996-02-05 | 2004-08-11 | 株式会社デンソー | 流量制御装置 |
DE19711760C1 (de) * | 1997-03-21 | 1998-10-01 | Honeywell Ag | Thermostatischer Wassermischer |
US7717351B2 (en) * | 2001-08-24 | 2010-05-18 | Margarl, LLC | Mixing valve |
US6926205B2 (en) * | 2003-12-15 | 2005-08-09 | Conbraco Industries, Inc. | Fluid supply failure protection valve |
US7744007B2 (en) * | 2004-11-01 | 2010-06-29 | Honeywell International Inc. | Thermostatic mixing valves and systems |
JP2008292026A (ja) * | 2007-05-23 | 2008-12-04 | Ats Japan Corp | 恒温維持装置。 |
JP5032269B2 (ja) * | 2007-11-02 | 2012-09-26 | 東京エレクトロン株式会社 | 被処理基板の温度調節装置及び温度調節方法、並びにこれを備えたプラズマ処理装置 |
US8733666B2 (en) * | 2008-11-18 | 2014-05-27 | Honeywell International Inc. | Thermostatic mixing valve with tamper resistant adjustment feature |
FR2942524B1 (fr) * | 2009-02-26 | 2011-04-15 | Watts Ind France | Vanne melangeuse thermostatique |
JP5340382B2 (ja) * | 2009-04-17 | 2013-11-13 | 三菱電機株式会社 | 弁ブロック及び弁ブロックユニット |
JP2011187758A (ja) | 2010-03-10 | 2011-09-22 | Tokyo Electron Ltd | 温度制御システム、温度制御方法、プラズマ処理装置及びコンピュータ記憶媒体 |
US9504970B2 (en) * | 2011-10-22 | 2016-11-29 | Magarl, Llc | Methods and apparatus for creating turbulence in a thermostatic mixing valve |
JP5912439B2 (ja) * | 2011-11-15 | 2016-04-27 | 東京エレクトロン株式会社 | 温度制御システム、半導体製造装置及び温度制御方法 |
US8809197B2 (en) | 2012-08-29 | 2014-08-19 | Tokyo Electron Limited | Plasma etching apparatus and control method |
DE112014001311T5 (de) * | 2013-03-12 | 2015-12-24 | Reliance Worldwide Corporation (Aust.) Pty.Ltd. | Wassertemperaturregelventil |
JP6465212B2 (ja) * | 2015-08-03 | 2019-02-06 | 株式会社デンソー | 冷凍サイクル装置 |
JP6498313B2 (ja) * | 2015-11-20 | 2019-04-10 | 三菱電機株式会社 | 弁装置および空気調和装置 |
JP6122541B1 (ja) * | 2016-11-22 | 2017-04-26 | 伸和コントロールズ株式会社 | 流量制御用二方弁及びこれを用いた温度制御装置 |
JP6947532B2 (ja) * | 2017-05-02 | 2021-10-13 | 伸和コントロールズ株式会社 | 流量制御弁及びこれを用いた温度制御装置 |
JP6928484B2 (ja) * | 2017-06-02 | 2021-09-01 | 伸和コントロールズ株式会社 | 流量制御用三方弁及びこれを用いた温度制御装置 |
JP6990058B2 (ja) * | 2017-07-24 | 2022-01-12 | 伸和コントロールズ株式会社 | 温度制御装置 |
US11280424B2 (en) * | 2019-06-03 | 2022-03-22 | Johnson Controls Tyco IP Holdings LLP | Failsafe system for a 270 degree actuator |
-
2017
- 2017-07-24 JP JP2017143038A patent/JP6990058B2/ja active Active
-
2018
- 2018-07-20 CN CN201880048457.6A patent/CN110959187B/zh active Active
- 2018-07-20 WO PCT/JP2018/027330 patent/WO2019021968A1/ja active Application Filing
- 2018-07-20 KR KR1020197037261A patent/KR102522388B1/ko active Active
- 2018-07-20 US US16/622,154 patent/US11073309B2/en active Active
- 2018-07-24 TW TW107125422A patent/TWI758515B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06174388A (ja) * | 1992-12-03 | 1994-06-24 | Daikin Ind Ltd | 2チャンネル液体冷却装置 |
JP2014063972A (ja) * | 2012-08-29 | 2014-04-10 | Tokyo Electron Ltd | プラズマエッチング装置及び制御方法 |
JP2015079930A (ja) | 2013-10-17 | 2015-04-23 | テキスト カンパニー リミテッド | 半導体製造設備のための温度制御システム |
JP2017063088A (ja) * | 2015-09-24 | 2017-03-30 | 東京エレクトロン株式会社 | 温度調整装置及び基板処理装置 |
JP2018031453A (ja) * | 2016-08-26 | 2018-03-01 | 伸和コントロールズ株式会社 | 流量制御用三方弁及びこれを用いた温度制御装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102685931B1 (ko) * | 2023-03-02 | 2024-07-17 | 한종원 | 냉온 절환 시스템 |
Also Published As
Publication number | Publication date |
---|---|
TWI758515B (zh) | 2022-03-21 |
US20200132344A1 (en) | 2020-04-30 |
US11073309B2 (en) | 2021-07-27 |
CN110959187A (zh) | 2020-04-03 |
TW201920887A (zh) | 2019-06-01 |
KR102522388B1 (ko) | 2023-04-17 |
WO2019021968A1 (ja) | 2019-01-31 |
CN110959187B (zh) | 2023-08-15 |
JP2019024055A (ja) | 2019-02-14 |
JP6990058B2 (ja) | 2022-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20200032041A (ko) | 온도제어 장치 | |
TWI756430B (zh) | 流量控制用三通閥及使用其之溫度控制裝置 | |
TWI794226B (zh) | 流量控制閥及使用其之溫度控制裝置 | |
KR20190039449A (ko) | 유량 제어용 삼방 밸브 및 이것을 이용한 온도 제어 장치 | |
JP6963662B2 (ja) | 流量制御弁、流量制御用三方弁及び温度制御装置 | |
JP6823494B2 (ja) | 温度制御装置 | |
CN116529513A (zh) | 流量控制用三通阀以及温度控制装置 | |
WO2022118804A1 (ja) | 流量制御用三方弁及び温度制御装置 | |
WO2022124128A1 (ja) | 流量制御用三方弁及び温度制御装置 | |
JP2022174577A (ja) | 流量制御弁及び温度制御装置 | |
TW202409340A (zh) | 溫度控制裝置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0105 | International application |
Patent event date: 20191217 Patent event code: PA01051R01D Comment text: International Patent Application |
|
PG1501 | Laying open of application | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20210408 Comment text: Request for Examination of Application |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20220810 Patent event code: PE09021S01D |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20230217 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20230412 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20230413 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration |